Your browser does not support JavaScript!

IEE Proceedings - Optoelectronics

Volume 150, Issue 4, August 2003

Volume 150, Issue 4

August 2003

Show / Hide details
    • Editorial: Mid-infrared optoelectronics materials and devices
      Room-temperature operation of GaAs-based quantum cascade lasers processed as ridge and microcavity waveguides
      Low-loss GaInAs-based waveguides for high-performance 5.5 µm InP-based quantum cascade lasers
      Single-longitudinal-mode emission from interband cascade DFB laser with a grating fabricated by interferometric lithography
      Experimental study of optical gain and loss in 3.4–3.6 µm interband cascade lasers
      Thermal characteristics of quantum-cascade lasers by micro-probe optical spectroscopy
      Hollow-waveguide gas sensing with room-temperature quantum cascade lasers
      Tunability of antimonide-based semiconductor lasers diodes and experimental evaluation of the thermal resistance
      Mid-infrared whispering gallery mode ring lasers and LEDs
      InP based quantum dash lasers with 2 µm wavelength
      Photonic-crystal distributed-feedback lasers for the midwave infrared
      Optically pumped mid-infrared type-II W lasers on InAs substrates
      Applications of lead-salt microcavities for mid-infrared devices
      Optically pumped lead-chalcogenide IR-emitters
      Diode and fibre pumped Cr2+:ZnS mid-infrared external cavity and microchip lasers
      RIN in mode-locked external cavity semiconductor lasers
      3.3 µm W quantum well light emitting diode
      Flip-chip bonded InAsSbP and InGaAs LEDs and detectors for the 3-µm spectral region
      Resonant-cavity light-emitting diodes (RC-LEDs) and detectors for mid-IR gas-sensing applications
      Negative luminescence from MWIR HgCdTe/Si devices
      Large-area IR negative luminescent devices
      Observation of intersubband absorption in the forbidden polarisation for a stepped double barrier quantum well
      Normal-incidence intersubband absorption in AlGaSb quantum wells: enhanced oscillator strength and new functionalities using asymmetry
      Heterojunction interfacial workfunction internal photoemission detectors for use at 8–20 µm
      Infrared dynamic scene simulating device based on light down-conversion
      Ternary and quaternary alloy III–V antimonide (InAsSb and InAsSbP) virtual substrates made by liquid-phase epitaxy
      Ultrathin InAs/GaAs single quantum wells grown on GaAs (111)A substrates by molecular beam epitaxy
      X-ray study of interface stoichiometry and electronic properties of optically pumped antimonide-based mid-infrared W-laser structures
      Theory of optical properties of segregated InAs/GaSb superlattices
      Strain and interfacial bond type effects on structural quality of InAs/Ga(As,Sb) superlattices grown on InAs substrates
      X-ray diffraction analysis of lateral composition modulation in InAs/GaSb superlattices intended for infrared detector applications

Most viewed content for this Journal


Most cited content for this Journal

We currently have no most cited data available for this content.

This is a required field
Please enter a valid email address