IEE Proceedings - Optoelectronics
Volume 150, Issue 1, February 2003
Volumes & issues:
Volume 150, Issue 1
February 2003
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- Author(s): N. Balkan
- Source: IEE Proceedings - Optoelectronics, Volume 150, Issue 1, p. 1 –2
- DOI: 10.1049/ip-opt:20030299
- Type: Article
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- Author(s): P. Urquhart
- Source: IEE Proceedings - Optoelectronics, Volume 150, Issue 1, p. 3 –8
- DOI: 10.1049/ip-opt:20030186
- Type: Article
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Future optical networks will employ many component technologies including transmitters, modulators, amplifiers, wavelength converters, add–drop multiplexers and crossconnects to provide flexible data provision at low cost. Fibre dispersion and nonlinear optical crosstalk become increasingly important as the overall capacity is increased and they constrain all aspects of the transmission strategy. By addressing the emerging component technologies the author reviews the context within which future dilute nitride semiconductor devices must operate. - Author(s): M. Kondow and T. Kitatani
- Source: IEE Proceedings - Optoelectronics, Volume 150, Issue 1, p. 9 –11
- DOI: 10.1049/ip-opt:20030030
- Type: Article
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Mixed group-V nitride alloys, also known as III–N–V alloys, such as GaNP, GaNAs and GaInNAs, are novel semiconductor materials that were not developed until the 1990s. Their unusual physical properties, such as huge degrees of bandgap bowing, make them applicable as the bases of devices providing superior performance. These materials have been applied in laser diodes, solar cells, and heterojunction bipolar transistors. The authors present a historical review of research into III–N–V alloys from its beginnings, with a particular focus on the application of the materials to optoelectronics. - Author(s): M. Pessa ; C.S. Peng ; T. Jouhti ; E.-M. Pavelescu ; W. Li ; S. Karirinne ; H. Liu ; O. Okhotnikov
- Source: IEE Proceedings - Optoelectronics, Volume 150, Issue 1, p. 12 –21
- DOI: 10.1049/ip-opt:20030185
- Type: Article
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The paper reports on recent observations of structural and optical properties of long-wavelength GaInNAs/GaAs quantum well semiconductors and the performance features of GaInNAs/GaAs vertical-cavity surface-emitting lasers (VCSELs) and edge-emitting lasers. The results obtained indicate that GaInNAs VCSELs and possibly edge-emitting lasers will complement, or even replace, dominant InP-based light sources in 1.3-µm short-haul data transmission systems. Whether GaAs lasers will ever become competitive with InP lasers at 1.4–1.6 µm is an open issue at the moment. Long-wavelength GaAs technology still has some distance to go in addressing remaining concerns; however, the authors believe that it is most likely to bring about the long-awaited breakthrough in component technology for optical fibre networks. - Author(s): J. Hader ; J.V. Moloney ; S.W. Koch
- Source: IEE Proceedings - Optoelectronics, Volume 150, Issue 1, p. 22 –24
- DOI: 10.1049/ip-opt:20030031
- Type: Article
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A fit-parameter-free model is used to calculate optical and electronic material properties of GaInNAs semiconductor lasers. Incoherent processes which lead to dephasing of optical polarisations and carrier thermalisation are calculated microscopically by solving generalised quantum-Boltzmann equations for electron–electron and electron–phonon scattering. The theory is shown to give excellent quantitative agreement with experimental results. Shortcomings of simpler approaches are demonstrated. Carrier capture times in GaInNAs systems of varying well depth and width are calculated and the results are compared to those in InGaPAs- and AlInGaAs-based structures. - Author(s): X. Marie ; J. Barrau ; T. Amand ; H. Carrère ; A. Arnoult ; C. Fontaine ; E. Bedel-Pereira
- Source: IEE Proceedings - Optoelectronics, Volume 150, Issue 1, p. 25 –27
- DOI: 10.1049/ip-opt:20030187
- Type: Article
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The band structure of InGaAsN/GaAs and InGaAsN/GaAsN strained quantum wells has been calculated using the band anticrossing model and an eight-band k·p Hamiltonian. The calculated interband optical transition energies have been compared to the experimental ones deduced from photocurrent spectroscopy experiments. Optical dipole moments for the interband optical transitions and the dependence of the optical gain spectra on injected carrier density have been computed. - Author(s): P.J. Klar ; H. Grüning ; L. Chen ; T. Hartmann ; D. Golde ; M. Güngerich ; W. Heimbrodt ; J. Koch ; K. Volz ; B. Kunert ; T. Torunski ; W. Stolz ; A. Polimeni ; M. Capizzi ; Gh. Dumitras ; L. Geelhaar ; H. Riechert
- Source: IEE Proceedings - Optoelectronics, Volume 150, Issue 1, p. 28 –35
- DOI: 10.1049/ip-opt:20030032
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An overview is presented of experimental and theoretical work on band structure aspects of (Ga,In)(N,As) and Ga(N,As) quantum well structures and epitaxial layers grown by molecular beam epitaxy (MBE) and metal-organic vapour phase epitaxy (MOVPE). The evolution of unusual band structure and phonon features in GaNxAs1−x with increasing x caused by the impurity character of nitrogen in GaAs is discussed. Hydrogenation of Ga(N,As) allows one to virtually switch off the N-induced changes of the band structure and the vibrational modes. A strong blue shift up to about 100 meV of the bandgap of quaternary samples is observed on thermal annealing. The magnitude of the blue shift depends strongly on In and N concentrations as well as on the growth and annealing conditions. Raman spectra of MOVPE-grown (Ga,In)(N,As) epitaxial layers reveal local In–N and Ga–N modes. On annealing, the intensity ratios of the local modes change, indicating a rearrangement of the nitrogen nearest-neighbour environments from Ga-rich to In-rich environments. Tight binding calculations suggest that this might contribute strongly to the observed blue shift. Other possible contributions to the blue shift are also discussed. - Author(s): C.S. Peng ; H.F. Liu ; T. Jouhti ; E.-M. Pavelescu ; J. Konttinen ; M. Pessa
- Source: IEE Proceedings - Optoelectronics, Volume 150, Issue 1, p. 36 –39
- DOI: 10.1049/ip-opt:20030033
- Type: Article
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The effects of annealing InGaNAs/GaAs heterostructures on diffusion at the interfaces and the resultant changes in optical and structural properties have been studied. Interdiffusion between In and Ga was found to be obvious. Inserting a thin InxdGa1−xdNydAs1−yd layer on either side of an InxqGa1−xqNyqAs1−yq quantum well (QW) suppressed this interdiffusion significantly. As a consequence, blue shift of the photoluminescence signal after annealing remained small and the optical activity was significantly improved. It was also found that a small amount of N incorporated in InGaAs QWs embedded in GaAs increased In/Ga interdiffusion and that increased mechanical stresses enhanced the interdiffusion. - Author(s): D. Alexandropoulos and M.J. Adams
- Source: IEE Proceedings - Optoelectronics, Volume 150, Issue 1, p. 40 –44
- DOI: 10.1049/ip-opt:20030034
- Type: Article
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Recently GaInNAs has attracted the attention of the research community by virtue of its unusual physical properties, which make it a promising material for optoelectronic applications. The bulk of the work has concentrated on growth issues and limited theoretical work has been presented. The authors use the band structure models developed by other research groups to evaluate the potential of this material. This evaluation considers laser related parameters, namely material gain, differential gain and linewidth enhancement factor. In particular, the effect of nitrogen composition on these parameters is explored and basic design rules are outlined not only on the basis of the emission wavelength but also in terms of optimal device operation. Finally, considerations are extended to the utilisation of GaInNAs in semiconductor optical amplifiers. - Author(s): N. Gerhardt ; M.R. Hofmann ; W.W. Rühle
- Source: IEE Proceedings - Optoelectronics, Volume 150, Issue 1, p. 45 –48
- DOI: 10.1049/ip-opt:20030035
- Type: Article
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The optical gain of MBE-grown and MOVPE-grown (GaIn)(NAs)/GaAs lasers and samples is investigated with different methods. A quantitative analysis of the experimental gain of commercial MBE-grown structures on the basis of a microscopic theory reveals that the gain is due to inhomogeneously broadened band–band transitions. In contrast, the authors' analysis of an MOVPE-grown sample indicates that the optical gain is influenced by the locally varying environment of the nitrogen in the active region resulting in a strong shoulder in the gain spectra. The results demonstrate that the optical properties of (GaIn)(NAs)/GaAs strongly depend on the growth and preparation processes of the device under study. - Author(s): A. Neumann ; A. Patanè ; L. Eaves ; A.E. Belyaev ; D. Gollub ; A. Forchel ; M. Kamp
- Source: IEE Proceedings - Optoelectronics, Volume 150, Issue 1, p. 49 –51
- DOI: 10.1049/ip-opt:20030036
- Type: Article
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Magneto-transport studies in an n-i-n doped GaAs/AlAs/Ga(AsN) heterostructure are described. This system acts as a resonant-tunnelling diode in which electrons can tunnel through the N-induced states in the Ga(AsN) layer. Magneto-tunnelling spectroscopy with magnetic fields parallel and perpendicular to the current direction is used to probe the nature, band-like or impurity-like, of the N states. The data indicate that the electron wavefunction of the N states is strongly localised and extends over distances smaller than 1.8 nm. - Author(s): I. Suemune ; K. Uesugi ; S. Ganapathy ; X.Q. Zhang ; M. Kurimoto ; B.J. Kim ; T.Y. Seong ; H. Machida ; N. Shimoyama
- Source: IEE Proceedings - Optoelectronics, Volume 150, Issue 1, p. 52 –55
- DOI: 10.1049/ip-opt:20030037
- Type: Article
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Two kinds of III–V–N related quantum structures grown on GaAs are proposed, which have the capability to emit in the 1.5 µm wavelength range. GaAsNSe is a new quaternary with high residual electron concentrations. It is shown that GaAsNSe/GaAs superlattices, with structural optimisation, give bright luminescence around 1.5 µm at room temperature. A second structure is InAs quantum dots (QDs) grown on (001) GaAs. Instead of a conventional GaAs capping layer, a GaNAs strain-compensating layer (SCL) is proposed to minimise net compressive strain induced by InAs QDs. The application of a GaNAs SCL to cap InAs QDs improves the homogeneity and optical quality of the InAs QDs by the compensation of net strain. It is shown that 1.5 µm emission from InAs QDs is made possible by increasing the N composition in the GaNAs SCL. - Author(s): R.P. Sarzała ; P. Maćkowiak ; M. Wasiak ; T. Czyszanowski ; W. Nakwaski
- Source: IEE Proceedings - Optoelectronics, Volume 150, Issue 1, p. 56 –58
- DOI: 10.1049/ip-opt:20030040
- Type: Article
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The comprehensive three-dimensional fully self-consistent model of the 1.3 µm in-plane stripe-geometry (GaIn)(NAs)/GaAs diode laser has been applied to optimise its structure and to simulate its continuous-wave (CW) performance characteristics at and above room temperature (RT). To reduce the RT CW lasing threshold, optimal value of the laser stripe width has been found to be about 9 µm. The current-spreading part of the p-type cladding layer below etched areas on both sides of the mesa should be as thin as possible for technological reasons. For a 130 K temperature increase over RT (=300 K), the T0 laser parameter has been determined to be 122 K. Its value is steadily reduced from 130 K (just above RT) to 116 K (at around 400 K). - Author(s): T. Miyamoto ; S. Makino ; Y. Ikenaga ; M. Ohta ; F. Koyama
- Source: IEE Proceedings - Optoelectronics, Volume 150, Issue 1, p. 59 –63
- DOI: 10.1049/ip-opt:20030038
- Type: Article
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The applicability of GaInNAs to long wavelength lasers is discussed by fabricating 1.4 µm GaInNAs quantum well (QW) lasers and by formation of self-organised GaInNAs quantum dots (QDs) grown by chemical beam epitaxy (CBE). A broad lasing spectrum at 77 K and a wide wavelength spacing at room temperature were observed for 1.4 µm QW lasers. The lasing spectrum was similar to that of InAs QD lasers and indicates the existence of potential fluctuation in high nitrogen GaInNAs QWs. Self-organised GaInNAs QD is also investigated as a novel long wavelength material. The nitrogen introduction causes an increase in the nucleus of the QD formation. Understanding and control of the influence of nitrogen introduction are important not only to realise high quality QDs but also to improve the compositional fluctuations in QWs. The observed result is valuable for the realisation of high-performance long (>1.3 µm) wavelength GaInNAs lasers to be used in the next generation of optical network systems. - Author(s): S. Blanc ; A. Arnoult ; H. Carrère ; E. Bedel ; G. Lacoste ; C. Fontaine ; M. Cabié ; A. Ponchet ; A. Rocher
- Source: IEE Proceedings - Optoelectronics, Volume 150, Issue 1, p. 64 –67
- DOI: 10.1049/ip-opt:20030039
- Type: Article
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Molecular beam epitaxy of GaAsN/GaAs and GaInAsN/GaAs structures on {111} oriented substrates has been studied. Ga(In)AsN/GaAs thick layers and quantum wells have been grown on (111)A and (111)B GaAs substrates. Nitrogen incorporation has been found to depend on substrate orientation and growth rate. The most promising orientation appears to be the (111)A orientation for GaAsN quantum wells and emission wavelengths up to 1.5 µm have been obtained. For (111)B, a broad emission is systematically observed indicating the presence of defects originating from N incorporation. For (111)A GaInAsN/GaAs quantum wells, the addition of indium leads to a red shift and to a broadening of the emission. It does not have any beneficial effect on (111)B quantum well optical properties. - Author(s): J. Toivonen ; T. Hakkarainen ; M. Sopanen ; H. Lipsanen
- Source: IEE Proceedings - Optoelectronics, Volume 150, Issue 1, p. 68 –71
- DOI: 10.1049/ip-opt:20030052
- Type: Article
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The effects of laser irradiation on the optical properties of GaAsN and GaInNAs quantum wells are studied in detail. Laser treatment is found to affect GaAsN quantum wells similarly to thermal annealing. The most intense photoluminescence is obtained by utilising both thermal and laser treatments. In quaternary GaInNAs, the effects of thermal annealing and laser treatment differ from each other. Thermal annealing of a Ga0.80In0.20N0.02As0.98 quantum well at 700°C for 10 min shifts the photoluminescence peak by 86 meV towards large photon energies and increases its integrated intensity by a factor of ten. For the same quantum well structure, the luminescence intensity increases by a factor of 2.5 due to laser treatment, whereas the blue shift of the luminescence peak is negligible. The laser treatment effects are observed at laser irradiation intensities encountered in typical photoluminescence measurement conditions. Therefore, the effects of laser irradiation should be taken into account when measuring the optical properties of Ga(In)NAs samples. - Author(s): J.Y. Wah ; N. Loubet ; R.J. Potter ; S. Mazzucato ; A. Arnoult ; H. Carrère ; E. Bedel ; X. Marie ; N. Balkan
- Source: IEE Proceedings - Optoelectronics, Volume 150, Issue 1, p. 72 –74
- DOI: 10.1049/ip-opt:20030051
- Type: Article
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The basic operation of a novel GaInNAs/GaAs based light emitting/absorbing device operating at 1250 nm is described. The device is a bi-directional field effect light emitting and absorbing heterojunction (BiFEEAH), which can simultaneously emit and detect light. This feature makes it possible to construct a wavelength converter, where one end of the device absorbs incoming light and the other end emits light at a different wavelength. The current device consists of a simple GaAs p–i–n structure, containing a single 90 Å GaInNAs quantum well in its intrinsic region. This is fabricated into a four contact device with separate n and p conducting channels. - Author(s): R.J. Potter ; N. Balkan ; X. Marie ; M. Senes ; H. Carrère ; A. Arnoult ; C. Fontaine
- Source: IEE Proceedings - Optoelectronics, Volume 150, Issue 1, p. 75 –76
- DOI: 10.1049/ip-opt:20030050
- Type: Article
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Time resolved photoluminescence (PL) has been used to investigate the low-temperature emission kinetics of GaInNAs and InGaAs quantum wells (QWs). The emission from InGaAs QWs remains stable over time; in contrast a clear red-shift of up to 20 meV is observed in the GaInNAs emission peak over a time period of 200–300 ps. This red-shift is interpreted in terms of trapping of excited carriers into localised excitonic states within the GaInNAs material. The presence of localised tail states is further supported by steady-state PL measurements; at low temperatures, a low-energy tail appears and a characteristic S-shape temperature dependence is observed in the emission energy. - Author(s): T. Jouhti ; J. Konttinen ; S. Karirinne ; O.G. Okhotnikov ; M. Pessa
- Source: IEE Proceedings - Optoelectronics, Volume 150, Issue 1, p. 77 –79
- DOI: 10.1049/ip-opt:20030049
- Type: Article
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The paper describes the first monolithic GaAs-based semiconductor saturable absorber made for operation at 1.55 µm. An epitaxially grown absorber mirror in the GaInNAs/GaAs system was successfully used to mode-lock an erbium-doped fibre laser. The GaInNAs material system possesses intriguing physical properties and provides great potential for lasers and nonlinear optical devices operating at the 1.3–1.55 µm wavelength range. - Author(s): J.C.L. Yong ; J.M. Rorison ; M. Othman ; H.D. Sun ; M.D. Dawson ; K.A. Williams
- Source: IEE Proceedings - Optoelectronics, Volume 150, Issue 1, p. 80 –82
- DOI: 10.1049/ip-opt:20030048
- Type: Article
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The gain and dynamic behaviour of InGaAsN quantum well (QW) lasers is investigated. A comparison of simulated material gain of 1300 nm InGaAsN, AlGaInAs and InGaAsP quantum wells is made to gauge its gain performance. The small-signal modulation characteristics of a 250 µm MQW ridge waveguide (RWG) InGaAsN laser are presented and high-temperature characteristics are shown. - Author(s): R.P. Sarzała ; P. Maćkowiak ; M. Wasiak ; T. Czyszanowski ; W. Nakwaski
- Source: IEE Proceedings - Optoelectronics, Volume 150, Issue 1, p. 83 –85
- DOI: 10.1049/ip-opt:20030041
- Type: Article
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An advanced three-dimensional fully self-consistent optical/electrical/thermal/gain model of a 1.3 µm (GaIn)(NAs)/GaAs vertical-cavity surface-emitting laser (VCSEL) has been applied to simulate its room-temperature (RT) continuous-wave (CW) performance characteristics and to enable its structure optimisation. Localisation of the AlxOy aperture has been found to have a decisive impact on the device RT CW lasing threshold. Orders of excited transverse modes have been discovered to be dramatically reduced (and device mode selectivity considerably improved) with a decrease in the lateral size of the laser active region. Hence, RT CW single-fundamental-mode operation becomes possible in small-active-region GaInNAs VCSELs. - Author(s): C. Sevik and C. Bulutay
- Source: IEE Proceedings - Optoelectronics, Volume 150, Issue 1, p. 86 –88
- DOI: 10.1049/ip-opt:20030047
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The authors present an analysis of impact ionisation (II) and related hot electron effects in submicron sized GaN, AlN and their ternary alloys, all of which can support very high field regimes, reaching a few megavolts per centimetre (MV/cm). The proposed high field transport methodology is based on the ensemble Monte Carlo technique, with all major scattering mechanisms incorporated. As a test-bed for understanding II and hot electron effects, an n+–n–n+ channel device is employed having a 0.1 µm thick n-region. The time evolution of the electron density along the device is seen to display oscillations in the unintentionally doped n-region, until steady state is established. The fermionic degeneracy effects are observed to be operational especially at high fields within the anode n+-region. For AlxGa1−xN-based systems, it can be noted that due to alloy scattering, carriers cannot acquire the velocities attained by the GaN and AlN counterparts. Finally, at very high fields II is shown to introduce a substantial energy loss mechanism for the energetic carriers that have just traversed the unintentionally doped n-region. - Author(s): T. Bilici ; Ş. İşçi ; A. Kurt ; A. Serpengüzel
- Source: IEE Proceedings - Optoelectronics, Volume 150, Issue 1, p. 89 –91
- DOI: 10.1049/ip-opt:20030046
- Type: Article
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The GaInNAs range of compounds is suitable for optoelectronic device applications in 1.3 and 1.55 µm lasers, because of the large conduction band discontinuity resulting in good electron confinement and improved temperature characteristics. GaInNAs is suited to wavelength division multiplexing (WDM) applications in high-speed optical communication networks. Since WDM techniques are available for steady-state traffic, there is a need for an all-optical packet-switching layer at the end of the optical to electronic conversion domain, which consists of all-optical gates, such as semiconductor optical amplifiers, channel dropping filters, interferometers, resonant cavity enhanced photodetectors, and optical random access memory elements. In these planar lightwave circuits, GaInNAs microspheres with their morphology-dependent resonances, can be used as compact optical filtering elements. The spectral filtering characteristics of GaInNAs microspheres are analysed by calculating the elastic scattering spectra optimised for both transverse electric and transverse magnetic resonance modes at the optical communication wavelengths of 1.3 and 1.55 µm. - Author(s): J.B. Héroux ; X. Yang ; W.I. Wang
- Source: IEE Proceedings - Optoelectronics, Volume 150, Issue 1, p. 92 –95
- DOI: 10.1049/ip-opt:20030042
- Type: Article
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The potential of the GaInNAs/GaAs material system for the fabrication of tunable devices based on the quantum confined Stark effect is investigated. Transfer matrix calculations are presented to show that the band alignment is ideal for such applications since the large conduction band offset and heavier electron effective mass limit electron tunnelling and exciton quenching in the presence of an electric field. Optical transitions up to the third confined energy levels (3e–3h) were observed by electroreflectance spectroscopy in a Ga0.84In0.16N0.02As0.98:Sb/ GaAs p–i–n multi-quantum well structure. A 12 meV Stark shift of the fundamental transition is found experimentally with an estimated applied electric field of 60 kV/cm, in good agreement with an effective well width calculation. - Author(s): N. Akçay ; A. Erol ; M.Ç. Arikan ; S. Mazzucato ; P.R. Chalker ; T.B. Joyce
- Source: IEE Proceedings - Optoelectronics, Volume 150, Issue 1, p. 96 –98
- DOI: 10.1049/ip-opt:20030043
- Type: Article
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The spectral dependence of in-plane photovoltage (PV) and photoconductivity (PC) in sequentially grown GaInAs and GaInNAs double quantum well (DQW) heterostructures has been investigated. The spectra were taken at different temperatures, ranging from 30 K to 300 K. Optical spectra obtained from PV and PC measurements were found to be complementary and are discussed in terms of possible optical transitions in the structure. - Author(s): Y.S. Huang ; C.J. Lin ; C.H. Wang ; N.Y. Li ; C.C. Fan ; P.W. Li
- Source: IEE Proceedings - Optoelectronics, Volume 150, Issue 1, p. 99 –101
- DOI: 10.1049/ip-opt:20030044
- Type: Article
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An InGaP/InGaAsN/GaAs NpN double-heterojunction bipolar transistor (DHBT) structure has been characterised using the techniques of photoreflectance (PR), including the dependence of the signals on the polarisation {[1 1 0] and [1 1̄ 0]} of the incident radiation, and surface photovoltage spectroscopy (SPS). The ordering parameter of the InGaP is deduced from the polarisation dependence of the PR signals from the emitter region. The observed Franz–Keldysh oscillations have been used to evaluate the electric fields in the collector and emitter regions. The field in the collector region agrees well with the theoretical value, while the field in the emitter region is found to be about 25 kV/cm smaller than the theoretical value not taking into account the possible ordering-induced screening effect. The difference is ascribed to the influence of the piezoelectric field related to ordering. In addition, the InGaAsN band gap is determined to be 1.196 eV by analysing the PR and SPS spectra in the base region. The narrower band gap of InGaAsN has led to a lower turn-on voltage, which shows great potential for the application of InGaAsN in low-power electronics. - Author(s): I. Mahboob ; T.D. Veal ; C.F. McConville
- Source: IEE Proceedings - Optoelectronics, Volume 150, Issue 1, p. 102 –104
- DOI: 10.1049/ip-opt:20030045
- Type: Article
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The electronic properties of epitaxial layers of InNxSb1−x grown on GaAs (001) substrates have been investigated using high-resolution electron-energy-loss spectroscopy (HREELS), Hall measurements and band structure modelled by a modified k·p Hamiltonian. The chemical composition of the epitaxial layers was found to be InN0.02Sb0.98 from secondary ion mass spectrometry (SIMS). However, electrical measurements and band structure calculations indicate a band gap of 135 meV, thus entailing an epilayer composition of InN0.0015Sb0.9985 , indicating that approximately 7.5% of the nitrogen present is electrically active, being located substitutionally on antimony lattice sites. Hall measurements and simulations of HREEL spectra imply a much larger effective mass at the Fermi level than a conventional Kane band structure material with an equivalent band gap.
Editorial
Component technologies for future optical networks
Progress in research into mixed group-V nitride alloys
Towards high-performance nitride lasers at 1.3 μm and beyond
Microscopic prediction of optical and electronic material properties in GaInNAs semiconductor lasers
Band structure and optical gain in InGaAsN/GaAs and InGaAsN/GaAsN quantum wells
Unusual properties of metastable (Ga,In)(N,As) containing semiconductor structures
Interdiffusion of GaInNAs/GaAs laser structures
Assessment of GaInNAs as a potential laser material
Optical spectroscopy of 1.3 μm (GaIn)(NAs)/GaAs lasers
Magneto-tunnelling spectroscopy of nitrogen clusters in Ga(AsN) alloys
III–V–N-related quantum structures for 1.5 µm emission
Structure optimisation of 1.3 μm (GaIn)(NAs)/GaAs in-plane lasers
Wavelength elongation of GaInNAs lasers beyond 1.3 μm
Comparison between dilute nitrides grown on {111} and (100) GaAs substrates: N incorporation and quantum well optical properties
Effect of post-growth laser treatment on optical properties of Ga(In)NAs quantum wells
Bi-directional field effect light emitting and absorbing heterojunction with Ga0.8In0.2N0.015As0.985 at 1250 nm
Time resolved PL study of GaInNAs quantum wells
1.55 µm monolithic GaInNAs semiconductor saturable absorber
Simulation of gain and modulation bandwidths of 1300 nm RWG InGaAsN lasers
Simulation of performance characteristics of GaInNAs vertical-cavity surface-emitting lasers
Hot electron effects in unipolar n-type submicron structures based on GaN, AlN and their ternary alloys
GaInNAs microspheres for wavelength division multiplexing
Quantum confined Stark effect in GaInNAs/GaAs multiple quantum wells
In-plane photovoltaic and photoconductive effects on GaInAs and GaInNAs double quantum well structures
Photoreflectance and surface photovoltage spectroscopy characterisation of an InGaP/InGaAsN/GaAs NpN DHBT structure
Determination of the substitutional nitrogen content and the electron effective mass in InNxSb1−x (001) epitaxial layers
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