IEE Proceedings - Optoelectronics
Volume 145, Issue 5, October 1998
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Volume 145, Issue 5
October 1998
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- Author(s): S. Haywood
- Source: IEE Proceedings - Optoelectronics, Volume 145, Issue 5, page: 253 –253
- DOI: 10.1049/ip-opt:19982329
- Type: Article
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- Author(s): B. Matveev ; N. Zotova ; S. Karandashov ; M. Remennyi ; N. Il'inskaya ; N. Stus' ; V. Shustov ; G. Talalakin ; J. Malinen
- Source: IEE Proceedings - Optoelectronics, Volume 145, Issue 5, p. 254 –256
- DOI: 10.1049/ip-opt:19982303
- Type: Article
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Room-temperature LEDs, fabricated from LPE grown InAsSb(P)/InAs heterostructures, are characterised with respect to methane (3.3 µm), carbon dioxide (4.3 µm) and nitric oxide (5.3 µm) optical detection. Output power as high as 50 µW (I = 1 A, 128 µs) and FWHM as small as 0.6 µm have been obtained for the first reported InAsSb LED emitting at 5.5 µm. - Author(s): A. Stein ; D. Püttjer ; A. Behres ; K. Heime
- Source: IEE Proceedings - Optoelectronics, Volume 145, Issue 5, p. 257 –260
- DOI: 10.1049/ip-opt:19982302
- Type: Article
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Strained InAsSb heterostructures are important materials for a variety of new III-V based mid-infrared emitters. In the study InP0.69Sb0.31/InAs light-emitting diodes (LEDs) employing an InAs/InAs0.94Sb0.06 multiquantum-well (MQW) active region have been investigated. They were characterised using electro-optical techniques and X-ray diffractometry. The authors have measured the temperature dependence of electroluminescence (EL): at low temperatures, the EL-intensity of the MQW diodes is higher than that of a simple PIN InPSb/InAs/InPSb structure. For both devices, room temperature EL could be resolved (emission wavelength of 3.3 µm, FWHM of 70 meV) which is related to InAs near-bandgap transitions. InAsP/InAsSb MQWs were grown to achieve higher antimony contents in the wells. The heterostructures were strain-balanced and enabled an antimony incorporation of 24% with, at the same time, high structural quality. In the photoluminescence (PL) spectra of InAs0.95P0.05/InAs0.86Sb0.14 MQWs strong features were observed around 4.2 µm due to atmospheric CO2 absorption. - Author(s): A.P. Danilova ; A.N. Imenkov ; T.N. Danilova ; N.M. Kolchanova ; M.V. Stepanov ; V.V. Sherstnev ; Yu.P. Yakovlev
- Source: IEE Proceedings - Optoelectronics, Volume 145, Issue 5, p. 261 –264
- DOI: 10.1049/ip-opt:19982306
- Type: Article
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InAsSb/InAsSbP double heterostructures diode lasers for the spectral region 3.3 µm grown by liquid phase epitaxy have been investigated. Emission spectra, far-field patterns and wavelength tuning have been studied over a wide current range from threshold value Ith up to 3Ith at the temperature of liquid nitrogen. Current-controlled wavelength tuning has been obtained both towards shorter wavelengths (to 4.56 cm-1) and towards longer wavelengths (up to 0.9 cm-1) at a temperature T = 77 K, at lasing generation that maintains single mode. Comparison of the emission properties of lasers driven by different types of current (short pulse current, sawtooth pulse current and quasi-CW regime) showed the same quantum-mechanical nature of current tuning. A theoretical model of this nonlinear optical phenomenon is proposed. The estimated times of current tuning, defined mainly by the photon lifetime in the cavity, are about 10-9–10-12 s. - Author(s): T. Ashley ; J. Beswick ; C.T. Elliott ; R. Jefferies ; A. Johnson ; G. Pryce
- Source: IEE Proceedings - Optoelectronics, Volume 145, Issue 5, p. 265 –267
- DOI: 10.1049/ip-opt:19982310
- Type: Article
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Diode lasers with an In0.948Al0.052Sb gain region have been grown by molecular beam epitaxy onto nominally matched InGaSb substrates, and onto mismatched InSb substrates. The former had a stimulated emission wavelength of 3.9 µm at 77 K, with the threshold current density being 140 Acm-2 and maximum operating temperature 165 K. The latter had a stimulated emission wavelength of 3.6 µm at 77 K, with the threshold current density being 417 Acm-2 and maximum operating temperature 160 K. - Author(s): M.P. Mikhailova ; K.D. Moiseev ; Y.A. Berezovets ; R.V. Parfeniev ; N.L. Bazhenov ; V.A. Smirnov ; Yu.P. Yakovlev
- Source: IEE Proceedings - Optoelectronics, Volume 145, Issue 5, p. 268 –274
- DOI: 10.1049/ip-opt:19982305
- Type: Article
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Type II antimonide–arsenide based heterostructures have recently received great attention from researchers engaged in the design of mid-infrared optoelectronic devices. Magnetotransport properties of the semimetal channel and the interface electroluminescence were experimentally studied on type II broken-gap GaInAsSb/InAs single heterojunctions grown by LPE with high quality interface. An electron channel with high Hall mobility was, for the first time, observed at the interface of isotype p-GaInAsSb/p-InAs heterojunctions with undoped and slightly doped quaternary layers at low temperatures. A depletion of the electron channel was found to be due to the heavy acceptor doping level of the quaternary layer. The two-dimensional nature of the interface carriers was established by Shubnikov–de Haas oscillation experiments at 1.8–4.2 K under magnetic fields up to 9–14 T. Intensive interface electroluminescence in the structures under study was observed in the spectral range of 3–4 µm at low temperatures (4.2–77 K). A model of the recombination transition at the type II broken-gap interface was proposed and experimentally confirmed. A new physical approach to the design of mid-infrared tunnelling-injection lasers is demonstrated. - Author(s): J.R. Meyer ; L.J. Olafsen ; E.H. Aifer ; W.W. Bewley ; C.L. Felix ; I. Vurgaftman ; M.J. Yang ; L. Goldberg ; D. Zhang ; C.-H. Lin ; S.S. Pei ; D.H. Chow
- Source: IEE Proceedings - Optoelectronics, Volume 145, Issue 5, p. 275 –280
- DOI: 10.1049/ip-opt:19982304
- Type: Article
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The authors review recent demonstrations of improved mid-IR laser performance when a type II ‘W-well’ structure is incorporated into the active region. The W configuration consists of a hole quantum well (e.g. GaSb or GaInSb) between electron quantum wells (e.g. InAs) in order to maximise the gain while suppressing nonradiative Auger losses. Optically pumped W lasers recently produced more than 1.4 W per facet peak power for pulsed operation at 300 K. An interband cascade laser with a W active region (W-ICL) has operated up to 286 K. The first III–V mid-IR VCSEL (λ = 2.9 µm) with a W active region has lased up to 280 K for pulsed operation and to 160 K for cw, with a cw threshold of only 4 mW for a 6 µm spot at 78 K. - Author(s): R.T. Kotitschke ; A.R. Hollingworth ; E.P. O'Reilly ; A.R. Adams ; B.N. Murdin ; C.J.G.M. Langerak ; P. Findlay ; C.R. Pidgeon ; T. Ashley ; G. Pryce ; C.T. Elliott
- Source: IEE Proceedings - Optoelectronics, Volume 145, Issue 5, p. 281 –286
- DOI: 10.1049/ip-opt:19982311
- Type: Article
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Measurements of the light-current characteristics of bulk InSb on InSb and InAlSb on InSb lasers, emitting at 5.1 µm at 77 K, have been made in the temperature range from 4.2 to 110 K. For the alloy device the authors find values of the characteristic temperature T0 of around 22 K above 90 K, which indicates that Auger recombination is dominant, but T0 increasing to around 45 K at lower temperatures. This increase is consistent with a decrease in Auger recombination with decreasing temperature. Using the all InSb device, the authors have applied magnetic fields along the cavity direction at 4.2 K, in order to change the density of states (DOS) to a peaked distribution at the Landau level energies. This enabled them to study the effects of a ‘quasi’-quantum wire structure with an easily variable degree of confinement. A reduction in the threshold current Ith with B-field of up to 30% was seen. The most striking results were obtained when the current was kept constant and the magnetic field was swept. Peaks in the light output were observed at exactly the field positions where the conduction band Landau level separation is resonant with the LO-phonon energy, giving enhanced electron cooling. Between the resonances the light output was suppressed due to the effect of the ‘phonon bottleneck’. Finally, the size of a real wire, corresponding to the Landau confinement which gives the greatest improvement, has been estimated to be 800 Å. - Author(s): S.K. Haywood ; C.G. Scott ; G.M. Sweileh ; M. Lakrimi ; N.J. Mason ; P.J. Walker ; L. Zheng
- Source: IEE Proceedings - Optoelectronics, Volume 145, Issue 5, p. 287 –291
- DOI: 10.1049/ip-opt:19982312
- Type: Article
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Despite the 7% lattice mismatch, the reverse bias dark current of p-GaSb/n-GaAs junctions has been found to be unexpectedly low. MOVPE-grown diodes exhibited dark currents up to two orders of magnitude lower than comparable GaSb homojunctions. The initial nucleation of GaSb on GaAs was found to play an important role in determining the properties of the bulk layer. A larger number of small nucleation sites produced diodes with lower reverse bias leakage currents and growth temperature was in turn critical in determining the size of these nucleation islands. The authors present a study correlating growth temperature with nucleation site density, dark current and open circuit voltage under illumination. Diodes were grown at temperatures ranging from 490–550°C using TMGa and TMSb. A reduction in reverse bias dark current of several orders of magnitude was observed across this narrow temperature range. The ‘turn-on’ voltage also increased with reduction in growth temperature and there was a corresponding increase in the average open circuit voltage, Voc, under illumination. However, Voc did not exceed ~0.25 V. This is low compared to GaSb homojunctions (typically 0.45 V) and it may be limited by a low shunt resistance under illumination as well as low efficiency from the thin GaSb layers. Other alkyls [TIPGa and t-DMASb], which allow a further reduction in growth temperature, are being investigated. - Author(s): A. Krier ; D. Chubb ; S.E. Krier ; M. Hopkinson ; G. Hill
- Source: IEE Proceedings - Optoelectronics, Volume 145, Issue 5, p. 292 –296
- DOI: 10.1049/ip-opt:19982308
- Type: Article
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p.
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Light emitting diodes (LEDs) and lasers operating in the 2 to 3 µm spectral region at room temperature are been demonstrated. The devices were fabricated from InxGa1-xAs/InAsyP1-y double heterostructures grown on n-type InP (100) substrates by molecular beam epitaxy. A strain relaxed buffer layer which incorporates composition reversals was used to reduce the threading dislocation density and to accommodate the large lattice mismatch (up to 2.7%) between the InP substrate and the device active region. Efficient electroluminescence emission at wavelengths between 2 and 3 µm was obtained from the LEDs at room temperature, while diode lasers exhibited coherent emission in the range 2–2.6 µm at temperatures up to 130 K. For one of the LEDs a characteristic absorption was readily observed at 2.7 µm in the diode electroluminescence emission spectrum, corresponding to strong water vapour absorption in the atmosphere. These devices could easily form the key component of an infrared gas sensor for water vapour detection and monitoring at 2.7 µm in a variety of different applications. - Author(s): A. Krier ; Z. Labadi ; J. Richardson
- Source: IEE Proceedings - Optoelectronics, Volume 145, Issue 5, p. 297 –301
- DOI: 10.1049/ip-opt:19982309
- Type: Article
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The authors report the successful growth of InAs quantum wells from the liquid phase using liquid phase epitaxy (LPE). They demonstrate the capacity of a modified rapid slider LPE technique for the growth of InAs layers in the thickness range below the electron de Broglie wavelength. InAs quantum wells 2.5 nm in thickness have been grown with excellent interface quality and thickness uniformity comparable to molecular beam or vapour phase techniques such as MBE or MOVPE. InAs quantum wells were grown closely lattice-matched to InAsSbP quaternary alloy confining layers having a much wider energy bandgap (0.5 eV). These quantum wells embedded between proper lattice-matched confining layers with a wider bandgap form the key element of a promising structure for the fabrication of mid-infrared LEDs and lasers based on InAs quantum wells. Some basic characteristics of the kinetics of InAs heteroepitaxy on InAsSbP quaternary surfaces are reported and the extent to which the main experimental parameters control the resulting layer thickness is determined. - Author(s): T.V. L'vova ; I.A. Andreev ; E.V. Kunitsyna ; M.P. Mikhailova ; V.P. Ulin ; Y.P. Yakovlev
- Source: IEE Proceedings - Optoelectronics, Volume 145, Issue 5, p. 303 –306
- DOI: 10.1049/ip-opt:19982307
- Type: Article
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p.
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The authors have performed theoretical and experimental investigations of the chemical interaction between mono- and disulphide water sodium solutions and (100) surfaces of GaSb. It is shown that the pre-epitaxial sulphide treatment of the GaSb substrate improves morphology and interface abruptness of the GaSb/GaInAsSb heterostructures grown by liquid phase epitaxy (LPE). - Author(s): L. Dobrzański and J. Piotrowski
- Source: IEE Proceedings - Optoelectronics, Volume 145, Issue 5, p. 307 –311
- DOI: 10.1049/ip-opt:19982301
- Type: Article
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A micromachined silicon thermopile and thermal emitters of infrared radiation have been developed. The thermopile junction materials were highly doped polycrystalline silicon deposited by PECVD or RF sputtering and aluminum metallisation. The hot junctions have been placed on a 0.5 µm thick membrane made of silicon nitride, and the cold junctions have been placed on a surface of monolithic silicon. Porous silicon has been used as a thick sacrificial layer to suspend the membrane over the cavity. Alternatively, nanoporous silicon has been exploited as the thermal insulation material. Similar methods have been used for fabrication of electrically modulated microemitters of infrared radiation. This technology enables cost-effective manufacturing of infrared thermal sensors, and high performance emitters.
Editorial: Mid-IR devices and materials
InAsSbP/InAs LEDs for the 3.3–5.5 µm spectral range
Room temperature InPSb/InAs and InPSb/InAs/InAsSb mid-infrared emitting diodes grown by MOVPE
Fast tuning of 3.3 µm InAsSb/InAsSbP diode lasers using nonlinear optical effects
Mid-infrared InSb and InAlSb diode lasers
Interface-induced phenomena in type II antimonide–arsenide heterostructures
Type II W, interband cascade and vertical-cavity surface-emitting mid-IR lasers
Influence of Auger and LO-phonon scattering on bulk and ‘quasi’-quantum wire mid-IR laser diodes
Effect of GaSb growth temperature on p-GaSb/n-GaAs diodes grown by MOVPE
Light sources for wavelengths > 2 µm grown by MBE on InP using a strain relaxed buffer
Rapid slider LPE growth of InAs quantum wells
Liquid-phase epitaxial growth of GaSb-related compounds on sulphide treated (100) GaSb substrates
Micromachined silicon thermopile and thermal radiators using porous silicon technology
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