IEE Proceedings J (Optoelectronics)
Volume 138, Issue 2, April 1991
Volumes & issues:
Volume 138, Issue 2
April 1991
Editorial: Semiconductor optoelectronics
- Author(s): John H. Marsh and Osamu Wada
- Source: IEE Proceedings J (Optoelectronics), Volume 138, Issue 2, page: 65 –65
- DOI: 10.1049/ip-j.1991.0011
- Type: Article
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Optical interconnections and optical digital computing based on the photonic parallel memory (PPM)
- Author(s): K. Matsuda and J. Shibata
- Source: IEE Proceedings J (Optoelectronics), Volume 138, Issue 2, p. 67 –74
- DOI: 10.1049/ip-j.1991.0012
- Type: Article
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We have proposed and fabricated a photonic parallel memory (PPM) which is an array of optoelectronic bistable switches. The switch consists of a heterojunction phototransistor (HPT) and a light-emitting diode (LED), and optical positive feedback from the LED to the HPT is the cause of bistability. In addition to the electrically erased PPM having only switches, an optically erasable PPM is also demonstrated. The optical reset function is attained by an additional HPT connected to the switch electrically in parallel. The memory operation of the PPM with functions of optical write-in, read-out, and erasing has been demonstrated. The minimum dissipation current of the switch was 130 μA, and the input optical power for set or reset was 3.4 μW or 1.6 μW, respectively. The light pulse with a width of 10 ns was able to set or reset the switch. The optical crossbar switchboard, the free-space reconfigurable interchip connections, and the parallel logic gates have been proposed based on the PPM.
High repetition rate operation of bistable laser diodes
- Author(s): T. Odagawa ; T. Machida ; T. Sanada ; K. Nakai ; K. Wakao ; S. Yamakoshi
- Source: IEE Proceedings J (Optoelectronics), Volume 138, Issue 2, p. 75 –78
- DOI: 10.1049/ip-j.1991.0013
- Type: Article
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We obtained a bistable laser diode with a saturable absorber operating at a high repetition rate. The laser was made with a semi-insulating layer, which realised low carrier density in the reset region and low parasitic capacitance (3 pF over 300 μm). Low carrier density in the reset region where there is high differential gain (loss) reduces the carrier density changes caused by electrical reset and optical set signals. These enable flip-flop operation at a 2.5 Gb/s repetition rate.
Evaluation of semiconductor optical parameters for laser diodes
- Author(s): M. Estéban and J. Arnaud
- Source: IEE Proceedings J (Optoelectronics), Volume 138, Issue 2, p. 79 –86
- DOI: 10.1049/ip-j.1991.0014
- Type: Article
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The small-signal modulation and noise properties (electrical voltage, optical power and phase) of laser diodes depend on ten real parameters relating to the semiconductor material employed. Among these, the phase-amplitude coupling factor α is of particular importance. These parameters are evaluated for GaAs at 0.87μm, GaInAsP at 1.55 μm and InAsSb at 3.87 μm at room temperature. Revised expressions for the optical gain are used. The light-hole contribution, the plasma effect and band-gap shrinkage are taken into account. The latter leads to a significant reduction of α, particularly below the peak-gain frequency. The α-factors for the three materials listed above are found to be, respectively, 2.9, 3.85 and 8.3 for conventional diodes.
Impurity induced disordering in InGaAs/InGaAlAs quantum wells using implanted fluorine and boron
- Author(s): A.C. Bryce ; J.H. Marsh ; R. Gwilliam ; R.W. Glew
- Source: IEE Proceedings J (Optoelectronics), Volume 138, Issue 2, p. 87 –90
- DOI: 10.1049/ip-j.1991.0015
- Type: Article
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Impurity induced disordering of an InGaAs/InGaAlAs quantum well structure has been investigated using boron and fluorine. The impurities were introduced by ion implantation and followed by thermal annealing. Small blue shifts in the exciton peak were observed in the boron implanted material. Much larger blue shifts, over 40 meV, were observed in the fluorine implanted material. At annealing temperatures greater than 650°C, red shifts in the exciton peak of unimplanted material were measured.
Theory of self-locking FM operation in semiconductor lasers
- Author(s): K.A. Shore and W.M. Yee
- Source: IEE Proceedings J (Optoelectronics), Volume 138, Issue 2, p. 91 –96
- DOI: 10.1049/ip-j.1991.0016
- Type: Article
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Gain saturation and multiwave mixing are shown to give rise to self-locking effects in semiconductor lasers resulting in FM operation. The analysis is shown to be in agreement with recently reported experimental observations of this phenomenon.
Stabilisation of fundamental-lateral-mode oscillations using optical feedback within an integrated amplifier/laser array
- Author(s): S. Mukai ; M. Watanabe ; H. Itoh ; H. Yajima
- Source: IEE Proceedings J (Optoelectronics), Volume 138, Issue 2, p. 97 –100
- DOI: 10.1049/ip-j.1991.0017
- Type: Article
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Tandem integrated amplifier/laser arrays are fabricated using the cleave-couple technique and applying antireflection coating on one end facet. Optical feedback within these small-sized integrated devices stabilises the fundamental supermode oscillations at high output levels.
Optical circuits and integrated detectors
- Author(s): M. Erman ; Ph. Riglet ; Ph. Jarry ; B.G. Martin ; M. Renaud ; J.F. Vinchant ; J.A. Cavaillès
- Source: IEE Proceedings J (Optoelectronics), Volume 138, Issue 2, p. 101 –108
- DOI: 10.1049/ip-j.1991.0018
- Type: Article
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Detectors integrated with optical circuits are expected to play an important role as key devices in optical telecommunications. The paper focuses on PIN GaInAs detectors monolithically integrated on InP based photonic circuits. Examples of such circuits include coherent receiver and access switch for a high speed local area network. Various detector structures and integrated strategies (butt-joint coupling and evanescent coupling) are reviewed and critically compared. Despite its weaker coupling to the waveguide, it is shown that evanescent field coupled structure is very attractive because of its relative ease of fabrication, good electrical characteristics and flexibility. The most recent results on evanescent field coupled detectors are reported. This includes PIN detectors fabricated on both n+ and semi-insulating InP substrates. To achieve a full compatibility between high speed detector and an active device such as for instance an optical switch, a two step epitaxial process is used. Typical results for detectors fabricated on semi-insulating substrate are 95% detector/waveguide coupling efficiency, dark current of 0.1 nA at −10 V, capacitance of 0.3 pF at −10 V and bandwidth in excess of 5 GHz.
Vector modulation off split-contact DFB lasers
- Author(s): W.B. Hale ; H. Sundaresan ; I.D. Henning ; J. Mellis
- Source: IEE Proceedings J (Optoelectronics), Volume 138, Issue 2, p. 109 –112
- DOI: 10.1049/ip-j.1991.0019
- Type: Article
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Multisection DFB lasers are currently of interest both for coherent FSK systems, which require a wide electrical tuning range and a large flat FM response, and for high bit rate direct detection systems which require wide bandwidth, low chirp AM response. In this paper we report a method of assessing and displaying the FM and AM response of two and three section lasers when the modulating signal is applied in different proportions to all the sections. With such ‘vector’ modulation, an improvement in the magnitude of the FM response could be obtained, together with a decrease in the residual AM. As expected, the FM response of these devices under vector modulation did not reflect their static tuning contours.
An active beam-scanning optoelectronic logic gate
- Author(s): H. Itoh ; S. Mukai ; M. Watanabe ; M. Mori ; H. Yajima
- Source: IEE Proceedings J (Optoelectronics), Volume 138, Issue 2, p. 113 –116
- DOI: 10.1049/ip-j.1991.0020
- Type: Article
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A novel system for optoelectronic logic operations is proposed using far-field deflection of a beam-scanning laser diode. Basic experimental results are presented using spatially coded optical signals. All binary logic gates which are symmetric with respect to the two inputs (eight gates including AND, OR, and XOR) are realised by a device composed of two input photodetectors, two amplifiers, and a beam scanning laser diode. Experimental results of a few representative logic operations are demonstrated. This optoelectronic system has two important advantages: all logical gates can be designed with only a few elements, and logical functions are easily integrated because of the uniform size and delay of each circuit.
GaAs/AlGaAs quantum well laser for high-speed applications
- Author(s): H. Lang ; H.D. Wolf ; L. Korte ; H. Hedrich ; C. Hoyler ; C. Thanner
- Source: IEE Proceedings J (Optoelectronics), Volume 138, Issue 2, p. 117 –122
- DOI: 10.1049/ip-j.1991.0021
- Type: Article
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GaAs/AlGaAs multiple quantum well ridge waveguide laser diodes have been fabricated using MOVPE and a dry etch process for the ridge structure. The threshold currents of these lasers are 10–15 mA at 25°C and the characteristic temperature T0 exceeds 200 K. Modulation bandwidths of up to 14 GHz and relaxation oscillation frequencies of up to 36 GHz are achieved with these devices. The modulation bandwidth exceeds 10 GHz in a temperature range up to 80°C.
Two-dimensional analysis of optical waveguides with a nonuniform finite difference method
- Author(s): S. Seki ; T. Yamanaka ; K. Yokoyama
- Source: IEE Proceedings J (Optoelectronics), Volume 138, Issue 2, p. 123 –127
- DOI: 10.1049/ip-j.1991.0022
- Type: Article
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A nonuniform finite difference method is presented for an analysis of arbitrarily-shaped optical waveguides. By introducing preconditioning of discretised coefficient matrices by similarity transformations, it has become possible to improve the accuracy of the solution without paying any penalty in terms of computing time. From the comparison between the exact analytical method and the nonuniform finite difference method for an analysis of planar slab waveguides, it has been clarified that the mesh refinement near the material interfaces plays a dominant role in determining the accuracy of solutions. Furthermore, the nonuniform finite difference method is used to model buried-channel waveguides and is compared with the effective-index method. It has been indicated that differences between the non-uniform finite difference method and the effective-index method have become significant when the channel dimensions in both directions become less than the propagation wavelength.
Characteristics of photonic parallel memory in relation to fabrication process
- Author(s): T. Chino ; K. Matsuda ; H. Adachi ; J. Shibata
- Source: IEE Proceedings J (Optoelectronics), Volume 138, Issue 2, p. 128 –132
- DOI: 10.1049/ip-j.1991.0023
- Type: Article
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The characteristics of the bistable switch integrated in photonic parallel memory are strongly affected by the fabrication process, in particular, the fabrication of the passivation film. The holding current of the switch was increased to more than 1 mA for reactive ion etching and plasma CVD, which also caused the increase of the leakage current of the phototransistor included in the switch. They are thought to be induced by the decrease of P atoms at the boundary region, which was observed by means of Auger electron spectroscopy. A low holding current of 24 μA and a low leakage current of 16 nA were attained by using polyimide as a passivation film.
Emission spectral width broadening for InGaAsP/InP superluminescent diodes
- Author(s): O. Mikami ; Y. Noguchi ; H. Yasaka ; K. Magari ; S. Kondo
- Source: IEE Proceedings J (Optoelectronics), Volume 138, Issue 2, p. 133 –138
- DOI: 10.1049/ip-j.1991.0024
- Type: Article
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This is a study of emission spectral width broadening for 1.3 μm and 1.5 μm InGaAsP/InP superluminescent diodes (SLDs). It proposes two new fabricated structures, stacked active layer (STAC) and tandem active layer (TANAC), and confirms that the emission spectral widths can be successfully broadened for both. By applying these new active layer structures to laser diodes (LDs), two new functions are demonstrated. One is wavelength-switching in STAC LDs and the other is SLD/LD mode switching in TANAC LDs.
InP-based photonic integrated circuits
- Author(s): T.L. Koch and U. Koren
- Source: IEE Proceedings J (Optoelectronics), Volume 138, Issue 2, p. 139 –147
- DOI: 10.1049/ip-j.1991.0025
- Type: Article
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Semiconductor photonic integrated circuits (PICs) refer to that subset of optoelectronic integrated circuits (OEICs) which focus primarily on the monolithic integration of optically interconnected guided-wave optoelectronic devices. PIC research is driven primarily by the high cost of single-mode optical connections, but it has also been given new vitality from advances in MOVPE crystal growth and related processing techniques. Design issues and recent progress in the fabrication and performance of InP-based PICs is discussed.
Spectral analysis of diode lasers by measurement of polarisation rotation in a birefringent fibre
- Author(s): A.S. Davison and I.H. White
- Source: IEE Proceedings J (Optoelectronics), Volume 138, Issue 2, p. 148 –154
- DOI: 10.1049/ip-j.1991.0026
- Type: Article
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This paper provides a detailed description of an optical spectrum analyser constructed from a single birefringent optical fibre. The operation of the analyser system for the measurement of optical chirp is reported and limits on this measurement technique are established. Also for the first time, measurement of optical linewidths down to frequency resolutions of a few MHz is reported. The analyser system is simple in construction, very inexpensive, and can allow time resolved measurements to be made.
Transmission characteristics of fibre gratings
- Author(s): J. Buus ; D.J. Robbins ; C.M. Ragdale ; D.C.J. Reid
- Source: IEE Proceedings J (Optoelectronics), Volume 138, Issue 2, p. 155 –160
- DOI: 10.1049/ip-j.1991.0027
- Type: Article
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The transmission against wavelength curves for single mode fibre Bragg gratings often shows a hitherto unexplained double dip. In this paper the theory for calculation of radiation from waveguides incorporating a periodic structure is refined and extended. The theory is applied to fibre gratings and explains the features seen in the transmission characteristics.
32 × 32 two-dimensional array of vertical to surface transmission electrophotonic devices with a pnpn structure
- Author(s): K. Kurihara ; Y. Tashiro ; I. Ogura ; M. Sugimoto ; K. Kasahara
- Source: IEE Proceedings J (Optoelectronics), Volume 138, Issue 2, p. 161 –163
- DOI: 10.1049/ip-j.1991.0028
- Type: Article
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A novel electrophotonic mode of operation reduces both the memory holding power and the optical switching energy to 26fJ at a 9 ns writing period in vertical to surface transmission electrophotonic devices with a pnpn structure (pnpn-VSTEPs). An integration of 1024 pnpn elements in a two-dimensional matrix has been demonstrated for these electrophotonic operations by using a thick metal line process and a low temperature dielectric film deposition for improving characteristics uniformity.
Giga-bit rate receiver OEICs grown by OMVPE for long-wavelength optical communications
- Author(s): H. Hayashi ; H. Yano ; K. Aga ; H. Kamei ; G. Sasaki
- Source: IEE Proceedings J (Optoelectronics), Volume 138, Issue 2, p. 164 –170
- DOI: 10.1049/ip-j.1991.0029
- Type: Article
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Receiver optoelectronic integrated circuits (OEICs) in which AlInAs/GaInAs HEMTs and GaInAs pin PDs were integrated monolithically on InP substrates, were studied. Good uniformity of device characteristics over a 2-inch whole wafer was obtained. Three different types of receiver circuits, i.e. high-impedance type, trans-impedance type, and straightforward termination type, were fabricated and are discussed. The sensitivity of −30.4 dBm was obtained for 1.2 Gbit/s NRZ signals from the high-impedance type OEIC, into which an equaliser was also integrated. The receiver operated up to 1.6 Gbit/s. The dynamic range of more than 23 dB was obtained using the straightforward termination type OEIC. These performances are good enough for practical use in optical communication systems operating at gigabit/s data rates.
Wavelength tunable DFB and DBR lasers for coherent optical fibre communications
- Author(s): Y. Kotaki and H. Ishikawa
- Source: IEE Proceedings J (Optoelectronics), Volume 138, Issue 2, p. 171 –177
- DOI: 10.1049/ip-j.1991.0030
- Type: Article
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The mechanisms of wavelength tuning in the multisection distributed feedback (DFB) and distributed Bragg reflector (DBR) lasers are discussed and a review is made of recent progress. It is shown that the maximum wavelength tuning range is limited by the maximum refractive index change in a semiconductor.
Modulation of picosecond pulses using semiconductor laser amplifiers
- Author(s): A.M. Lomax and I.H. White
- Source: IEE Proceedings J (Optoelectronics), Volume 138, Issue 2, p. 178 –184
- DOI: 10.1049/ip-j.1991.0031
- Type: Article
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Semiconductor laser amplifiers are studied as modulators of picosecond pulses. A new hybrid laser amplifier model is described which is used to investigate ultrashort pulse amplification in both modulated and non-modulated amplifiers. Novel shaping of chirped pulses is demonstrated experimentally and theoretically using a continuously driven amplifier. Modelling of electrically modulated amplifiers shows that direct amplifier modulation may be possible up to a frequency of 5 GHz to provide pulse gating or enhanced pulse train amplification.
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