IEE Proceedings I (Solid-State and Electron Devices)

IEE Proceedings I (Solid-State and Electron Devices)

Online ISSN 2053-7980
Print ISSN 0143-7100

Published from 1980-1988, IEE Proceedings I contained significant and original contributions on solid-state and electron devices.

This journal was previously known as IEE Journal on Solid-State and Electron Devices 1976-1979. ISSN 0308-6968. more..

This journal was previously known as Proceedings of the Institution of Electrical Engineers 1963-1979. ISSN 0020-3270. more..

This publication is continued by IEE Proceedings G (Circuits, Devices and Systems) 1989-1993. ISSN 0956-3768. more..

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Goal-oriented subgraph isomorphism technique for IC device recognition
- Author(s): A.D. Brown and P.R. Thomas
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- p. 141 –150 (10)
  The paper describes a programmable mask analysis system to check technology rules and extract circuits in a low cost computing environment. The mask verification language (MVL) programmer is only concerned with how a device is fabricated and not with how it is actually recognised. The system includes an optimising MVL compiler that removes redundant mask operations, and efficiency is thereby maximised by minimising the volume of mask data that must be processed.A geometry processor reduces the mask set to a set of topologically interrelated entities called features. These features are analysed to recognise instances of devices using a goal oriented sub-graph isomorphism algorithm. Conventionally, the execution times of graph isomorphism algorithms are related polynomially to the problem size. However, by careful organisation of the database, and by imposing certain rules on the structure of the MVL, execution times that are almost linear are obtained.
CMOS integrated circuit for differential monitoring of spacecraft battery cell voltages
- Author(s): L.G. van den Berghe
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- p. 151 –154 (4)
  The paper describes a circuit technique that enables the differential monitoring of battery cell voltages to be combined with digital logic on a single CMOS chip. Junction isolation of the n-well and thick MOS capacitors are used to remove the high common mode voltage present at each battery cell. The resulting small voltage is ground referenced and can be processed by on-chip AD converters.
Stabilised high power MOSFET modules
- Author(s): M.J. Lazarus ; K.V.O. Rabah ; P.M. Ripley
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- p. 155 –158 (4)
  A new technique is presented that restores the feature of nearly constant current (high output slope resistance) of intensively self heated power MOSFETs. Two versions are provided: one for the conventional MOSFETs; the second for the new current sensing MOSFETs.
Effect of HCl/O₂ and O₂ dry environments on the distribution of boron in oxide and silicon from thermally deposited boron
- Author(s): H. Kemhadjian and G.M. Mhango
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- p. 159 –161 (3)
  Step anodisation and ion microprobe techniques have been used to study the effect of HCl/O₂ and O₂ dry environments on the distribution of boron in oxide and silicon from thermally deposited boron. Profiles from the two methods have been compared in silicon, and it is observed that, near the Si/SiO₂ interface, the two profiles do not match. In fact, the SIMS results do not show much dip at the Si/SiO₂ interface to account for segregation. As well as giving an enhanced oxidation rate, the HCl/O₂ ambient introduces more boron into SiO₂ than the O₂ dry environment, without greatly lowering interface concentration.
Measurement of threshold voltage and channel length of submicron MOSFETs
- Author(s): S. Jain
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- p. 162 –164 (3)
  A simple method for characterisation of MOSFETs with appreciable source and drain series resistance is presented. The ratio g/g^1/2_m of conductance g and transconductance g_m is shown to be a linear function of gate bias, whose intercept equals the threshold voltage and whose slope is proportional to the square root of the channel length. The method is illustrated using measurements on 0.4 μm to 1.0 μm channel length LDD transistors.

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IEE Proceedings I (Solid-State and Electron Devices)

Volumes & issues:

Volume 135 (1988)

Volume 134 (1987)

Volume 133 (1986)

Volume 132 (1985)

Volume 131 (1984)

Volume 130 (1983)

Volume 129 (1982)

Volume 128 (1981)

Volume 127 (1980)

Latest content

Goal-oriented subgraph isomorphism technique for IC device recognition

CMOS integrated circuit for differential monitoring of spacecraft battery cell voltages

Stabilised high power MOSFET modules

Effect of HCl/O₂ and O₂ dry environments on the distribution of boron in oxide and silicon from thermally deposited boron

Measurement of threshold voltage and channel length of submicron MOSFETs

Most viewed content for this Journal

Most cited content for this Journal