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Volume 134
Issue 4
IEE Proceedings I (Solid-State and Electron Devices)
Volume 134, Issue 4, August 1987
Volumes & issues:
Volume 134, Issue 4
August 1987
Measurement and computation of nonlinear saturation in gyrotron tubes
- Author(s): J.M. Wachtel ; H.B. Mitchell ; C. Cohen
- Source: IEE Proceedings I (Solid-State and Electron Devices), Volume 134, Issue 4, p. 105 –110
- DOI: 10.1049/ip-i-1.1987.0019
- Type: Article
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Measurements of nonlinear saturation in a gyrotron oscillator tube are compared with the results of a numerical simulation. The dependence of gyrotron output power on essential parameters is demonstrated in experiments which have controlled independent variation of electron beam characteristics and resonator loading.
Erratum: Alpha particle induced soft errors in NMOS RAMS: a review
- Author(s): P.M. Carter and B.R. Wilkins
- Source: IEE Proceedings I (Solid-State and Electron Devices), Volume 134, Issue 4, page: 110 –110
- DOI: 10.1049/ip-i-1.1987.0020
- Type: Article
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Gate currents in thin oxide MOSFETs
- Author(s): M. Miura-mattausch ; A.V. Schwerin ; W. Weber ; C. Werner ; G. Dorda
- Source: IEE Proceedings I (Solid-State and Electron Devices), Volume 134, Issue 4, p. 111 –116
- DOI: 10.1049/ip-i-1.1987.0021
- Type: Article
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In nchannel MOSFETs with gate oxides below 20 nm the gate current, as a function of the gate voltage, shows unusual structures which are not observed for thicker oxides. Besides the known negative peak at VG ≈ VD, a negative shoulder at VG ≈ VD/2 and a positive peak at VG < VD/2 appear. It is shown here that the additional structures can be attributed partly to hot electrons injected against the electric field in the pinchoff region and partly to hot holes. Using 2- dimensional MOSFET simulation results as a starting point, all the features of the gate current against VG curves can be described using one single model. Using the gate current calculation, the currents injected into the gate oxide, which are very important to describe the degradation and are not equal to the gate currents, are estimated correctly.
Bulk unipolar transistors in the limit of nonpunch-through
- Author(s): A. Al-Bustani
- Source: IEE Proceedings I (Solid-State and Electron Devices), Volume 134, Issue 4, p. 116 –122
- DOI: 10.1049/ip-i-1.1987.0022
- Type: Article
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The paper describes quantitatively a new, unified model for the homoj unction narrowbase bulk unipolar transistors. With the effects of minority-carrier changes and currents included, the analysis can define the limits between the p-plane barrier transistor, the triangular barrier transistor and the camel transistor. It is also possible to use this unified analysis to account for the limit of large p-region widths where transistors are in a nonpunch-through mode of operation. A comparison between the results of the unified theory and other existing models and experimental data is also presented.
Surface field reduction for planar semiconductor devices using oxygen doped amorphous silicon
- Author(s): S. Murakami ; Y. Misawa ; N. Momma
- Source: IEE Proceedings I (Solid-State and Electron Devices), Volume 134, Issue 4, p. 123 –129
- DOI: 10.1049/ip-i-1.1987.0023
- Type: Article
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A high breakdown voltage for a planar junction has been achieved by using a layer of oxygen doped amorphous silicon film over a composite of chemical-vapour deposition (CVD) phosphosilicate glass (PSG) film, CVD SiO2 film, and thermally oxidised SiO2. The high breakdown phenomenon was analysed from the viewpoint of surface depletion layer width. Measurements of the surface depletion layer width by scanning laser microscope, and numerical calculations of a 2-dimensional Poisson's equation for the distributed potential in oxygen doped amorphous silicon showed close agreement. The distributed potential of oxygen doped amorphous silicon influenced induction of the surface depletion layer, resulting in a reduced surface electric field and higher breakdown voltage. The leakage current of oxygen doped amorphous silicon was negligible at high temperatures (>125°C) compared to the normal junction leakage current. This was due to the low activation energy of conductivity for oxygen doped amorphous silicon.
Effects of the third-electrode positions on three-terminal GaAs p+n-δ(p+)n-n+ switching devices
- Author(s): K.F. Yarn ; Y.H. Wang ; C.P. Liou ; M.S. Jame ; C.Y. Chang
- Source: IEE Proceedings I (Solid-State and Electron Devices), Volume 134, Issue 4, p. 129 –136
- DOI: 10.1049/ip-i-1.1987.0024
- Type: Article
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GaAs p+n- δ(p+)n-n+ 3-terminal switching devices prepared by molecular beam epitaxy are fabricated. The positions of the third electrode are found to affect the device characteristics profoundly. The effects of 3rd-electrode positions with bias conditions are investigated in the paper. Control efficiency is then defined to compare the device performance.
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