Home
>
Journals & magazines
>
IEE Proceedings I (Solid-State and Electron Devic...
>
Volume 132
Issue 3
IEE Proceedings I (Solid-State and Electron Devices)
Volume 132, Issue 3, June 1985
Volumes & issues:
Volume 132, Issue 3
June 1985
A comparison of the photovoltaic and electroluminescent effects in GaP/Langmuir-Blodgett film diodes
- Author(s): M.C. Petty ; J. Batey ; G.G. Roberts
- Source: IEE Proceedings I (Solid-State and Electron Devices), Volume 132, Issue 3, p. 133 –139
- DOI: 10.1049/ip-i-1.1985.0027
- Type: Article
- + Show details - Hide details
-
p.
133
–139
(7)
The electrical properties of a series of Au/Langmuir-Blodgett film/n-GaP metal-insulatorsemiconductor diodes are reported. The fabrication of diodes incorporating varying numbers of monolayers on the same GaP substrate has enabled a direct comparison of device properties with insulator thickness to be made. The devices have been operated both as photovoltaic solar cells and as electroluminescent diodes. The Langmuir-Blodgett film thickness required to optimise the electroluminescence efficiency is found to be 21 nm. This corresponds to the insulator thickness at which the short-circuit photocurrent of the solar cell begins to decrease. Results are discussed in terms of a simple energy band diagram for the metal-insulator-semiconductor structure.
Optimised travelling-wave amplifier with two parallel-gate transmission lines
- Author(s): U. Christ and F. Arndt
- Source: IEE Proceedings I (Solid-State and Electron Devices), Volume 132, Issue 3, p. 140 –142
- DOI: 10.1049/ip-i-1.1985.0028
- Type: Article
- + Show details - Hide details
-
p.
140
–142
(3)
A simple optimisation procedure for the design of travelling-wave amplifiers with two parallel gatelines and a common drain line is presented which utilises the full impedance matching potential involved. The parameters to be optimised for best broad-band performance of the amplifier are the characteristic impedances and, simultaneously, the line section lengths. The predicted performance of a design parallel distributed amplifier, employing eight typical 0.7 μm × 300 μm FETs, i.e. four for each of the two parallel gate-lines, shows 8.8 ± 0.5 dB gain over the frequency range 2–16.5 GHz.
Temperature measurements of thin films on substrates
- Author(s): D. de Cogan ; A.F. Howe ; P.W. Webb
- Source: IEE Proceedings I (Solid-State and Electron Devices), Volume 132, Issue 3, p. 143 –146
- DOI: 10.1049/ip-i-1.1985.0029
- Type: Article
- + Show details - Hide details
-
p.
143
–146
(4)
Thin-film fuses consisting of single layers of silver have been deposited on silica and alumina substrates. Results of temperature measurements are presented for the case where the fuse current is significantly below the level necessary for metal vaporisation and arc formation.
Bumpless monotonic bicubic interpolation for MOSFET device modelling
- Author(s): T. Shima
- Source: IEE Proceedings I (Solid-State and Electron Devices), Volume 132, Issue 3, p. 147 –150
- DOI: 10.1049/ip-i-1.1985.0030
- Type: Article
- + Show details - Hide details
-
p.
147
–150
(4)
A bumpless monotonic bicubic interpolation (MBI) technique is proposed. The method is applied to MOSFET device modelling for guessing at a very smooth interpolated curved surface. Monotonic increase in a two-dimensional surface can be held, even if the actual device characteristics show steepest change, like punchthrough characteristics. The technique can be utilised for very small number micron and/or submicron VLSI MOSFET device modelling.
Gas sensors made from Langmuir-Blodgett films of porphyrins
- Author(s): R.H. Tredgold ; M.C.J. Young ; P. Hodge ; A. Hoorfar
- Source: IEE Proceedings I (Solid-State and Electron Devices), Volume 132, Issue 3, p. 151 –156
- DOI: 10.1049/ip-i-1.1985.0031
- Type: Article
- + Show details - Hide details
-
p.
151
–156
(6)
Langmuir-Blodgett multilayer films of porphyrins have been produced and in-plane conductivity measurements performed on the samples when exposed to the toxic gases NO2, CO and H2S. A number of porphyrins showed a large and rapid increase in conductivity when exposed to NO2. The response of the samples varied with film thickness, the partial pressure of the gas, the central metal ion of the porphyrin and also with the peripheral substituents on the porphyrin ring.
An accurate and simple technique of determination of the maximum power point and measurement of some solar cell parameters
- Author(s): S. Deb ; K. Maitra ; A. Roychoudhuri
- Source: IEE Proceedings I (Solid-State and Electron Devices), Volume 132, Issue 3, p. 157 –162
- DOI: 10.1049/ip-i-1.1985.0032
- Type: Article
- + Show details - Hide details
-
p.
157
–162
(6)
An accurate method of determining the maximum power point (Vm, Im) of an energy conversion device like a solar cell, based on simple geometrical considerations, is given. Two additional checks on the correctness of the point are also possible by the method. The procedure holds irrespective of the values of parameters like the diode ideality factor (A), the series resistance (Rs) and the shunt resistance (Rsh), and enables an accurate evaluation of the fill factor (FF). The reliability of the method is established using the V against I curves for an Si homojunction, a Cu2S/CdS heterojunction and Al/Si, MIS Schottky barrier cells. It is shown that possibilities exist of quite accurate, consistent and comprehensive measurement of the light generated current IL, A and Rs if the effect of Rsh is negligible, and the reverse saturation current Io determined from the characteristics without illumination. Typical examples of the application of the method are given. It is found that the value of Rs, determined by the method, is always larger than that obtained from the slope of the V against I curve near the V-axis. This is shown to be expected on physical grounds. However, on the same basis, it is found that the value of Rsh, as obtained from the slope of the reverse characteristic under illumination, should not differ much from the value at the operating point, i.e. (Vm, Im)
Threshold shift of NMOS transistors due to high energy arsenic source/drain implantation
- Author(s): K.A. Sabine ; G.A.J. Amaratunga ; A.G.R. Evans
- Source: IEE Proceedings I (Solid-State and Electron Devices), Volume 132, Issue 3, p. 163 –166
- DOI: 10.1049/ip-i-1.1985.0033
- Type: Article
- + Show details - Hide details
-
p.
163
–166
(4)
NMOS transistors using high-energy source/drain implantation have been found to have negative threshold shifts. These shifts are shown to be due to arsenic penetration of the polysilicon gate. An implant model of the three-layer structure has been used to predict the threshold shift, and good agreement is found with experimental results.
Photovoltaic effects of GaAs MESFET layers
- Author(s): G.J. Papaioannou ; J.A. Kaliakatsos ; P.C. Euthymiou ; J.R. Forrest
- Source: IEE Proceedings I (Solid-State and Electron Devices), Volume 132, Issue 3, p. 167 –170
- DOI: 10.1049/ip-i-1.1985.0034
- Type: Article
- + Show details - Hide details
-
p.
167
–170
(4)
The photovoltaic properties of GaAs MESFET layers are studied by varying illumination wavelength and temperature for two different electrode geometry devices. The active layer-substrate photoresponse is determined by the substrate deep traps. A significant contribution to the Dember effect is observed when the device electrode path is extended over the substrate. The photovoltage response to amplitude modulated illumination is limited by trapping effects within the substrate
Computer-aided thermal analysis of reverse-biased PIN diodes
- Author(s): D. De Cogan and S.A. John
- Source: IEE Proceedings I (Solid-State and Electron Devices), Volume 132, Issue 3, page: 170 –170
- DOI: 10.1049/ip-i-1.1985.0035
- Type: Article
- + Show details - Hide details
-
p.
170
(1)
Computer-aided thermal analysis of reverse-biased PIN diodes
- Author(s): V. Ramamurthy and K.N. Bhat
- Source: IEE Proceedings I (Solid-State and Electron Devices), Volume 132, Issue 3, page: 170 –170
- DOI: 10.1049/ip-i-1.1985.0036
- Type: Article
- + Show details - Hide details
-
p.
170
(1)
Most viewed content for this Journal
Article
content/journals/ip-i-1
Journal
5
Most cited content for this Journal
We currently have no most cited data available for this content.