IEE Proceedings I (Solid-State and Electron Devices)

Volume 132, Issue 3, June 1985

Volume 132, Issue 3

June 1985

A comparison of the photovoltaic and electroluminescent effects in GaP/Langmuir-Blodgett film diodes
Optimised travelling-wave amplifier with two parallel-gate transmission lines
Temperature measurements of thin films on substrates
Bumpless monotonic bicubic interpolation for MOSFET device modelling
Gas sensors made from Langmuir-Blodgett films of porphyrins
An accurate and simple technique of determination of the maximum power point and measurement of some solar cell parameters
Threshold shift of NMOS transistors due to high energy arsenic source/drain implantation
Photovoltaic effects of GaAs MESFET layers
Computer-aided thermal analysis of reverse-biased PIN diodes
Computer-aided thermal analysis of reverse-biased PIN diodes

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