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IEE Proceedings I (Solid-State and Electron Devices)

Volume 132, Issue 1, February 1985

Volumes & issues:

Volume 132, Issue 1

February 1985

Novel travelling-wave energy convertor
Effects of dust on the performance of concentrator photovoltaic cells
  • Author(s): M.S. El-Shobokshy ; A. Mujahid ; A.K.M. Zakzouk
  • Source: IEE Proceedings I (Solid-State and Electron Devices), Volume 132, Issue 1, p. 5 –8
  • DOI:  10.1049/ip-i-1.1985.0002
  • Type: Article
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  • p. 5 –8 (4)
    The effect of dust on the performance of photovoltaic concentrators has been investigated. The dust concentration in the air was measured continuously during the test period, and the rate of dust accumulation on the concentrator's surface was determined. For the purpose of comparison, an identical concentrator, the surface of which was kept clean, was evaluated simultaneously with the dusty concentrator. The change of the I/V characteristics as a result of dust accumulation was related to the amount of dust accumulated per unit area of the collector surface (g/m2). It has been shown that the major reductions in the short-circuit current, cell temperature and the efficiency occur as the dust starts to deposit onto the collector surface, but the rate of decrease is slower for dust accumulations beyond 2 g/m2. It is argued that the dust accumulation per unit area is a more representative parameter than the exposure time for such studies.
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In situ study of electromigration by joule displacement microscopy
Layout related deformations of meander-type MOS transistor I/V characteristics
Modelling of a new high current gain bipolar transistor with n-doped hydrogenated silicon emitter
  • Author(s): O. Bonnaud  and  P. Viktorovitch
  • Source: IEE Proceedings I (Solid-State and Electron Devices), Volume 132, Issue 1, p. 17 –22
  • DOI:  10.1049/ip-i-1.1985.0005
  • Type: Article
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  • p. 17 –22 (6)
    The limitation of the maximum current gain attainable in a silicon bipolar transistor is due to many factors whose main effect is to prevent the blocking of minority carrier injection in the emitter. In the paper we show that blocking of minority carrier injection in the emitter, and hence a large increase of the current gain, can be achieved with a new type of npn bipolar transistor, where the emitter is made of n-doped hydrogenated amorphous silicon (a-Si: H). It is demonstrated that the very low mobility of carriers and the large bandgap (around 1.8 eV) in amorphous silicon are the two main factors involved in the improvement of the gain. The feasability and the potential interest of the device are studied in detail on the basis of the up-to-date known electrical properties of doped a-Si: H.
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Experimental 1 Mbit DRAM using power reduction techniques
  • Author(s): Katsutaka Kimura ; Kiyoo Itoh ; Ryoichi Hori ; Jun Etoh ; Yoshiki Kawajiri
  • Source: IEE Proceedings I (Solid-State and Electron Devices), Volume 132, Issue 1, p. 23 –28
  • DOI:  10.1049/ip-i-1.1985.0006
  • Type: Article
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  • p. 23 –28 (6)
    One of the serious problems which must be overcome in realising a 1 Mbit DRAM is high-power dissipation associated with data-line charging and discharging. To solve this problem, this paper proposes the following three techniques, which permit power reduction by about one-quarter: a multidivided data-line structure, 512 refresh cycles and an on-chip voltage limiter circuit. These techniques are proven to be useful through the design and evaluation of an experimental n-MOS 1 Mbit DRAM with a 46 mm2 chip size. The chip fabricated provides a 295 mW operating power at a 260 ns cycle time despite the fast access time of 90 ns. The possibility of further power reduction is also described.
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Prediction of self-sustained oscillations in buried-heterostructure stripe lasers
  • Author(s): B.S. Poh
  • Source: IEE Proceedings I (Solid-State and Electron Devices), Volume 132, Issue 1, p. 29 –33
  • DOI:  10.1049/ip-i-1.1985.0007
  • Type: Article
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  • p. 29 –33 (5)
    A laser model for narrow-striped DH lasers, in which there is good carrier confinement as well as good optical confinement, is proposed and analysed. Such conditions are encountered in the buried-heterostructure laser, the stripe buried-heterostructure laser, and the buried-optical-waveguide-structure laser. It is found that the model is stable, showing no self-sustained oscillations, when the value of the factor h is greater than 350. The factor h = (2πLe/W)2, where Le is the effective diffusion length of carriers in the active layer and W is the stripe width. A device is proposed, which will generate high-speed optical pulses in a predictable and reproducible manner.
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Operation of a single-phase CCD on GaAs at 560 MHz
Simulation of near ballistic electron transport in a submicron GaAs diode with ALx Ga1−x As/GaAs heterojunction cathode
  • Author(s): K. Tomizawa ; Y. Awano ; N. Hashizume ; M. Kawashima
  • Source: IEE Proceedings I (Solid-State and Electron Devices), Volume 132, Issue 1, p. 37 –41
  • DOI:  10.1049/ip-i-1.1985.0009
  • Type: Article
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  • p. 37 –41 (5)
    A Monte-Carlo simulation program has been developed to simulate the motion of electrons in a submicron GaAs diode with an AlxGa1−xAs/GaAs heterojunction cathode. The electric field in the diode is self-consistently determined by solving Poisson's equation under reasonable boundary conditions. The distributions of electron energies and electron velocities, and the profiles of the electron density, electric field and average electron velocity, are computed. Based on these data, various properties of the electron transport in a submicron diode with a hot-electron injection mechanism are discussed.
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Quasisaturation effect in high-voltage VDMOS transistors
  • Author(s): J.L. Sanchez ; M. Gharbi ; H. Tranduc ; P. Rossel
  • Source: IEE Proceedings I (Solid-State and Electron Devices), Volume 132, Issue 1, p. 42 –46
  • DOI:  10.1049/ip-i-1.1985.0010
  • Type: Article
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  • p. 42 –46 (5)
    In this paper dealing with the so-called quasisaturation current limitation in high-voltage VDMOS transistors, the authors have given a linear law on the dependence of the on-state conductance on the square-root of the drain bias. A four-section model, taking into account the pinching of the drain epilayer by the space-charge extensions and the current spreading in the bulk, accounts for the quasisaturation phenomenon, and the linear behaviour of the empirical law is well verified. Finally, the scaling-up effects on the high-voltage-device current capability are discussed.
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Book review: Transmission Electron Microscopy of Silicon VLSI Circuits and Structures
Recent datareview from EMIS. lonisation coefficient in GaAs, doping dependence

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