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IEE Proceedings I (Solid-State and Electron Devices)

Volume 131, Issue 2, April 1984

Volumes & issues:

Volume 131, Issue 2

April 1984

Cutoff-taper performance of substrate-edge excited optoelectronic switches
Method for evaluation of hysteretic interface properties and their application to anodisedinsb MIS diodes
  • Author(s): T. Nakagawa  and  H. Fujisada
  • Source: IEE Proceedings I (Solid-State and Electron Devices), Volume 131, Issue 2, p. 51 –55
  • DOI:  10.1049/ip-i-1.1984.0015
  • Type: Article
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  • p. 51 –55 (5)
    Metal-insulator-semiconductor (MIS) diodes were fabricated with InSb by anodisation process. They showed both high- and low-frequency C/V characteristics at liquid-nitrogen temperature. Large hysteresis of the charge injection type was also found for all samples. To avoid hysteresis effects when evaluating interface states, a new method for high-frequency capacitance measurement was proposed. The method makes use of the fact that hysteretic charge flow does not occur if the sweep range of the bias voltage is restricted within a small range. The entire range of C/V curve, which is necessary for evaluating the interface states, is constructed from a lot of narrow-swing C/V curves. Adequacy of this method was theoretically explained by a trap model of hysteresis, in which the traps are distributed spatially in the insulator close to the interface and are responsible for observed interface states and hysteresis. It was found experimentally by using anodic InSb MIS diodes that this method efficiently removed hysteretic charge flow from captures and emissions of electrons at the interface states. Results indicate that trap distribution in the energy scale is rather uniform and has a density of about 1016 eV−1 cm−3, which gives rise to the interface states density of the order of 102 eV−1 cm−2.
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Single drift impatt diodes on diamond heat sinks for W-band frequencies
SVG guard-ring Al-Ti-Si schottky diode for high-speed LSI applications
  • Author(s): Toshitaka Fukushima ; Kouji Ueno ; Toshio Fukumoto ; Kazuo Tanaka
  • Source: IEE Proceedings I (Solid-State and Electron Devices), Volume 131, Issue 2, p. 59 –62
  • DOI:  10.1049/ip-i-1.1984.0017
  • Type: Article
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  • p. 59 –62 (4)
    The SVG (shallow V-groove) guardring fabrication technique for Schottky diodes allows a high packing density, a high breakdown voltage, a low leakage and a small junction capacitance to be achieved. By evaporation of a thin titanium film under an aluminum film, the barrier heights of the contacts can be shifted slightly from that of a Al-Si Schottky diode toward thatof a Ti-Si Schottky diode. The barrier height of 0.61 eV was determined by the JF/VF and JF/T2/1/T characteristics. The breakdown voltages of 240 randomly chosen devices were measured at a reverse current level of 1 μA. The high typical breakdown voltage of 26.5 V and its narrow distribution indicate that the field peaking along the periphery of the metal contacts was eliminated by the SVG guard ring. The SVG guard ring blocks the lateral spread of the depletion layer and reduces the junction capacitance to 70% of that of a Schottky diode without guard ring.
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Etch-induced MOS guard-ring-protected schottky-barrier diodes
Performance evaluation of photovoltaic silicon cells under concentrated sunlight
  • Author(s): A.K.M. Zakzouk ; M. Electrochem ; A. Mujahid ; M.S. El-Shobokshy
  • Source: IEE Proceedings I (Solid-State and Electron Devices), Volume 131, Issue 2, p. 66 –72
  • DOI:  10.1049/ip-i-1.1984.0019
  • Type: Article
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  • p. 66 –72 (7)
    The electrical performance of concentrated photovoltaic Si cells has been studied underthe application of real sunlight. The photogenerated current increases linearly with cell temperature at a rate of 5 mA/°C, and it increases with the normal incident solar intensity. The difference between the cell temperature and the lowest cooler temperature increases sharply with incident solar intensity. The module open-circuit voltage decreases with increasing cell temperature. The rate decreases with decreasing normal solar intensity. The module open-circuit voltage increases with normal incident solar intensity. The rate decreases as the incident solarintensity increases. The module efficiency decreases with increasing cell temperature at a ratewhich depends on incident solar intensity and cell temperature. As the incident solar intensity increases, the reduction in efficiency per degree rise in cell temperature decreases. For a given cell temperature, the module efficiency increases with incident power to a maximum and then decreases. A normalised empirical formula relating the incident solar intensity to the cell temperature, for the maximum efficiency condition, is obtained.
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