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IEE Proceedings I (Solid-State and Electron Devices)

Volume 130, Issue 3, June 1983

Volume 130, Issue 3

June 1983

VLSI
Comparison of MOS processes for VLSI
Modelling of small MOS devices and device limits
High-density one-device dynamic MOS memory cells
Submicron MOS process with 10:1 optical-projection printing and anisotropic dry etching
New hot-carrier injection and device degradation in submicron MOSFETs
Transit and storage times of bipolar transistors in a VLSI environment

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