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IEE Proceedings I (Solid-State and Electron Devices)

Volume 130, Issue 1, February 1983

Volumes & issues:

Volume 130, Issue 1

February 1983

Editorial
Stability of amorphous-silicon thin-film transistors
  • Author(s): M.J. Powell  and  D.H. Nicholls
  • Source: IEE Proceedings I (Solid-State and Electron Devices), Volume 130, Issue 1, p. 2 –4
  • DOI:  10.1049/ip-i-1.1983.0002
  • Type: Article
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  • p. 2 –4 (3)
    The stability of amorphous-silicon/silicon-nitride thin-film transistors has been investigated by measuring the time dependence of the source-drain current decay under a constant DC gate bias at a fixed temperature. At all temperatures (25–100°C) and gate voltages (6–36V) used in our experiments, the current decay is due entirely to a shift in the threshold voltage caused by electron trapping in the silicon-nitride layer. The threshold shift is a strong function of temperature. The source-drain current decay after 104s continuous DC operation is 4% at 25°C, rising to 20% at 70°C. This degree of stability is adequate for application to matrix addressing of large-area alphanumeric displays.
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Practical comparison of optoelectronic sampling systems and devices
  • Author(s): J.K.A. Everard  and  J.E. Carroll
  • Source: IEE Proceedings I (Solid-State and Electron Devices), Volume 130, Issue 1, p. 5 –16
  • DOI:  10.1049/ip-i-1.1983.0003
  • Type: Article
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  • p. 5 –16 (12)
    Three different sampling systems using optoelectronic switching have been constructed and compared. The first system used two wavelengths of light: one to switch between conductors and the other to switch to ground. Sampling measurements were made on an X-band trapatt diode. The second system used a single wavelength (0.53μm) to effect the switching between conducting lines or to ground. This newer system used coplanar guides with earth shields, and used significantly less optical pulse energy to effect the switching. A 10 ps sampling system was constructed and tested on a novel 10 ps impulse generator. Constant energy in each laser pulse could permit considerable reduction in the required optical pulse energy. The paper is terminated with a demonstration using about 1 pJ of energy from an injection laser to form a 300 ps optoelectronic sampling system. Although this is slower than conventional sampling systems it is capable of handling signals from 20 mV to over 100 V, demonstrating the robustness of optoelectronic switches. Improvements are expected in the future.
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Numerical solutions for surface electric field distributions in avalanching p-i-n power diodes
  • Author(s): V.K. Pathak  and  J. Gowar
  • Source: IEE Proceedings I (Solid-State and Electron Devices), Volume 130, Issue 1, p. 17 –23
  • DOI:  10.1049/ip-i-1.1983.0004
  • Type: Article
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  • p. 17 –23 (7)
    The results of a two-dimensional finite-difference analysis of the electric field distribution near the surface of reverse-biased p-i-n power diodes are presented. The boundary conditions encountered in fully passivated and encapsulated devices have been modelled as closely as possible, thereby enabling the effects of device polarity, electrode overhang and dielectric coating to be investigated. Our calculations show that the peak field near the surface is less than the peak bulk field for all positive bevel angles, whereas with negative bevel angles it is significantly less than the peak bulk field only for shallow bevel angles of 10° or less. Metal overhang and shallow doping profiles have been shown to reduce the field near the surface. It is concluded that a 50° positive bevel angle with metal overhang and shallow doping profile represents the optimum design. Experimental devices made to this design using two deep diffusions gave higher breakdown voltages with harder and more stable characteristics than devices with steeper doping profile, or with steeper bevel angle or with metal underhang.
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Two-dimensional finite-element simulation of a permeable-base transistor
Empirical model for gallium arsenide MESFETs
  • Author(s): D.J. Brown
  • Source: IEE Proceedings I (Solid-State and Electron Devices), Volume 130, Issue 1, p. 29 –32
  • DOI:  10.1049/ip-i-1.1983.0006
  • Type: Article
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  • p. 29 –32 (4)
    The paper describes an accurate nonlinear model for GaAs MESFETs suitable for inclusion in general circuit simulation programs such as SPICE. To run efficiently, programs such as SPICE require simple models that can be described by as few parameters as possible, yet still meeting the accuracy criteria, and it is for this reason that an entirely empirical approach has been taken. The DC model for drain current is defined by seven parameters, with a further six defining the MES diode equations and the basic capacitance model. The model has been implemented in SPICE, and several characteristics are produced to indicate model accuracy.
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AC model for MOS transistors from transient-current computations
Comparison between two-dimensional short-channel MOSFET models
Erratum: Direct-gap group IV semiconductors based on tin
MOS (Metal Oxide Semiconductor) Physics and Technology
Deep Levels in Semiconductors

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