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Volume 129
Issue 3
IEE Proceedings I (Solid-State and Electron Devices)
Volume 129, Issue 3, June 1982
Volumes & issues:
Volume 129, Issue 3
June 1982
Various colour electroluminescence of rare-earth-implanted ZnS diodes
- Author(s): G.Z. Zhong and F.J. Bryant
- Source: IEE Proceedings I (Solid-State and Electron Devices), Volume 129, Issue 3, p. 85 –88
- DOI: 10.1049/ip-i-1.1982.0018
- Type: Article
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Single-crystal zinc sulphide has been implanted with one or two rare-earth elements and used to fabricate light-emitting diodes. The dependence of electroluminescence brightness on current, temperature and implantation fluence has been studied, and cathodoluminescence and electroluminescence emission spectra have been measured. Different relative proportions of two implanted rare-earth elements in a double implantation have been used to obtain different colours of electroluminescence emission.
Book review: Physics of Semiconductor Devices
- Author(s): J.E. Carroll
- Source: IEE Proceedings I (Solid-State and Electron Devices), Volume 129, Issue 3, page: 88 –88
- DOI: 10.1049/ip-i-1.1982.0019
- Type: Article
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88
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Theoretical analysis of current spreading in stripe-geometry injection lasers
- Author(s): J.E.A. Whiteaway
- Source: IEE Proceedings I (Solid-State and Electron Devices), Volume 129, Issue 3, p. 89 –95
- DOI: 10.1049/ip-i-1.1982.0020
- Type: Article
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89
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Iterative techniques have been used to solve the current spreading problem in stripe contact injection lasers. The effects of n- and p-passive layers, contact resistance, and carrier diffusion in the active layer are considered. The results are presented in normalised form, facilitating their use in device design.
Factors affecting probability distribution and yield of silicon dioxide defects
- Author(s): A.K.M. Zakzouk
- Source: IEE Proceedings I (Solid-State and Electron Devices), Volume 129, Issue 3, p. 96 –102
- DOI: 10.1049/ip-i-1.1982.0021
- Type: Article
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96
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It is now possible, using nondestructive liquid crystal technique, to test the distribution and the yield of a particular but important type of defect across the wafer surface, the oxide defect. It is shown that, for defects in silicon dioxide grown in dry oxygen, the probability distribution obeys Poisson statistics for different chip sizes, different times of field application, different oxide thickness and different values of applied field. The average number of defects per chip increases exponentially with the increase in the fourth root of time of field application until saturation. The average saturation number of defects per chip exponentially decreases with the increase in the square root of oxide thickness. For both cases - before and after saturation − the average number of defect per chip is directly proportional to the chip size. Initially, at t ≃ 0, the average number of defects per chip is relatively low, and the average value of yield exponentially decreases with the increase in chip size, and is in good agreement with Poisson's yield model. After approximately 1 min of field application the average yield decreases with the increase in the time of field application, the chip size and the applied field; but increases with the increase in the oxide thickness. In general, the average yield decreases with the increase in the average number of defects per chip in a manner very close to Murphy's yield curve, whatever the reasons for the increase in the average number of defects per chip.
Depth inhomogeneity of CVD Si3N4 layers
- Author(s): P. Tüttő ; G. Stubnya ; Zs.J. Horváth
- Source: IEE Proceedings I (Solid-State and Electron Devices), Volume 129, Issue 3, p. 103 –104
- DOI: 10.1049/ip-i-1.1982.0022
- Type: Article
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103
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The potential distribution, the effective resistivity and the etch rate of the Si3 N4 layers have been studied as a function of the nitride thickness in bevelled etched MNOS structures. An unexpectedly high level of nonuniformity has been found in thin (< 70 nm) nitride layers. This level strongly depends on the annealing conditions and may be connected with the inhomogeneous depth distribution of Si−H, N−H groups and dangling silicon bonds.
Electron - beam annealing of B-, P-, As-, Sb-, and Ga-implanted silicon by multiple-scan method
- Author(s): R.A. McMahon and H. Ahmed
- Source: IEE Proceedings I (Solid-State and Electron Devices), Volume 129, Issue 3, p. 105 –110
- DOI: 10.1049/ip-i-1.1982.0023
- Type: Article
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105
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Data are presented on the sheet resistance of ion-implanted silicon following isothermal electron-beam annealing by the multiple-scan method. Anneals were performed on implanted 5 mm square chips for times around 5 s, with anneal temperatures up to 1350°C. Implants of As, P, B, Sb and Ga were annealed, ranging in doses from 1013 cm−2 to 1016 cm−2 in both (100) and (111) orientation silicon, and the sheet resistance was measured with a four-point probe. The measurements are presented as a plot of sheet resistance against electron-beam power, for a given dopant and anneal time, and the corresponding temperatures are also shown. Above a threshold temperature region of 750°C to 950°C near-full electrical activation is obtained, except in cases where the doping level approaches the solid solubility limit, or for certain high-dose boron implants. Slightly lower sheet resistances are obtained for implants in (100) material than (111) material, and at temperatures exceeding 1100°C diffusion effects are expected to be significant. The activation of ion implants without significant redistribution of dopant during annealing can be used to improve the performance of ion-implanted devices.
Generalised thermionic-emission theory of carrier transport through thin base of bipolar transistor
- Author(s): R.S. Popović
- Source: IEE Proceedings I (Solid-State and Electron Devices), Volume 129, Issue 3, p. 111 –115
- DOI: 10.1049/ip-i-1.1982.0024
- Type: Article
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Carrier transport through the very thin, inhomogeniusly doped base of a bipolar transistor is analysed. Use is made of the analogy between the Schottky diode and thin base transistor model to find the current/voltage characteristic. So the advanced, generalised thermionic-emission theory of Schottky barrier, taking into account quantum-mechanical effects, is easily adopted for transistor model. The results show there is a considerable level (about 10%) of tunnelling component in the total collector current of contemporary microwave transistors.
Edge effects in glass-passivated collector-base junctions of high-voltage transistors
- Author(s): A. Savini ; E. Dallago ; M. Felici ; M. Panigada ; F. Versiglia
- Source: IEE Proceedings I (Solid-State and Electron Devices), Volume 129, Issue 3, p. 116 –120
- DOI: 10.1049/ip-i-1.1982.0025
- Type: Article
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A study of edge effects in glass-passivated collector-base junctions of multiepitaxial transistors is carried out by means of a two-dimensional finite element simulation of the electric field in reverse-biased junctions. The influence, on the field distribution, due to the geometrical parameters and the presence of both charges within dielectrics and equipotential rings over the external surfaces is carefully examined. An HV structure suitable for stable and reliable operation is established. The finite-element model is shown to be a powerful tool in the development of correct design criteria for very complex structures, aiming towards the achievement of a good compromise between performance and silicon consumption.
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