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IEE Proceedings I (Solid-State and Electron Devices)

Volume 128, Issue 4, August 1981

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Volume 128, Issue 4

August 1981

Prospects for ion bombardment and ion implantation in GaAs and InP device fabrication
Monte Carlo particle modelling of local heating in n-type GaAs FET
Calculated performance of monolithic hot-electron transistors
  • Author(s): J.M. Shannon
  • Source: IEE Proceedings I (Solid-State and Electron Devices), Volume 128, Issue 4, p. 134 –140
  • DOI:  10.1049/ip-i-1.1981.0035
  • Type: Article
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  • p. 134 –140 (7)
    The properties of monolithic hot-electron transistors, together with structures required to obtain optimum performance, are described. It is calculated that, in principle, structures in Si and GaAs can be made with delay times ≃ 1 ps, while maintaining useful emitter and collector barriers capable of injecting and collecting electrons with energies well above the conduction band edge in the base. Assuming that the characteristic length for energy loss in these materials is similar, it is calculated that it should be possible to make transistors having FT and FMAX> 100 GHz with power delay products ≲ 1 fJ.
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Characterisation of Al/AlInAs/GaInAs heterostructures
High-yield process for GaAs enhancement-mode MESFET integrated circuits
  • Author(s): J. Mun ; J.A. Phillips ; B.E. Barry
  • Source: IEE Proceedings I (Solid-State and Electron Devices), Volume 128, Issue 4, p. 144 –147
  • DOI:  10.1049/ip-i-1.1981.0037
  • Type: Article
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  • p. 144 –147 (4)
    The paper describes a high-yield process for the fabrication of enhancement-mode MESFET integrated circuits. The process utilises light-stimulated anodic oxidation followed with oxide removal as a means of recessing the gate of an FET for normally-off operation. The oxidation technique has an important self-limiting property allowing different amounts of GaAs to be oxidised according to local doping and thickness variations. Yields of over 85% of 11-stage ring oscillators have been obtained by this method with a standard deviation in the pinch-off voltage of 75 mV, which represents a factor of four improvement over as-grown vapour-phase epitaxial material. The recessed-gate normally-off MESFET structure also has the highest transconductance reported to date due to the reduction in parasitic series resistance. Values of gm up to 70 mS/mm have been obtained from MESFETs having gate lengths of 1.5 μm.
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Local bipolar-transistor gain measurement for VLSI devices
  • Author(s): O. Bonnaud  and  J.P. Chante
  • Source: IEE Proceedings I (Solid-State and Electron Devices), Volume 128, Issue 4, p. 148 –153
  • DOI:  10.1049/ip-i-1.1981.0038
  • Type: Article
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  • p. 148 –153 (6)
    A method is proposed for measuring the gain of a bipolar transistor region as small as possible. The measurement then allows the evaluation particularly of the effect of the emitter-base junction edge and the technology-process influence of VLSI-technology devices. The technique consists in the generation of charge carriers in the transistor base layer by a focused laser beam in order to bias the device in as small a region as possible. To reduce the size of the conducting area, a transversal reverse base current is forced through the base layer resistance in order to pinch in the emitter current in the illuminated region. Transistor gain is deduced from small signal measurements. A model associated with this technique is developed, and this is in agreement with the first experimental results.
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Stability analysis of transverse modes in stripe - geometry injection lasers
  • Author(s): K.A. Shore  and  T.E. Rozzi
  • Source: IEE Proceedings I (Solid-State and Electron Devices), Volume 128, Issue 4, p. 154 –159
  • DOI:  10.1049/ip-i-1.1981.0039
  • Type: Article
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  • p. 154 –159 (6)
    We analyse the spatial stability of transverse modes in stripe-geometry injection lasers. A parameter is derived as a measure of the potential spatial instability of the modes. The analysis follows the interaction between the optical field and the charge-carrier density as described by the carrier-diffusion and wave equations. A perturbation is applied to an initial configuration of the system, a series solution for the perturbed system is obtained and an index is derived which determines the stability of the initial configuration. Numerical values for the index are obtained from self-consistent solutions of the device equations. It is shown how nonlinearities in the light/current characteristics of the device, together with near-field shifts, are related to values of the instability index in excess of unity.
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