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Volume 128
Issue 2
IEE Proceedings I (Solid-State and Electron Devices)
Volume 128, Issue 2, February 1981
Volumes & issues:
Volume 128, Issue 2
February 1981
Temperature dependence of threshold current in (GaIn)(AsP) DH lasers at 1.3 and 1.5 μm wavelength
- Author(s): G.H.B Thompson
- Source: IEE Proceedings I (Solid-State and Electron Devices), Volume 128, Issue 2, p. 37 –43
- DOI: 10.1049/ip-i-1.1981.0017
- Type: Article
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(Galn)(AsP) oxide-insulated stripe lasers for both 1.3 and 1.5 μm wavelength, and with varied levels of Zn doping, have been studied for the effect of temperature on threshold current, spontaneous efficiency and carrier recombination time. The spontaneous efficiency was found to decrease considerably with temperature, and this accounted quantitatively in every case for the observed large increase in threshold with temperature. There was a break point Tb in temperature, around 200 K, above which the efficiency started to drop appreciably. Tb decreased significantly with increase in both wavelength and Zn doping. The decrease in efficiency was acompanied by a corresponding decrease in recombination time. Auger recombination is postualted to be responsible for both effects. One anomalous wafer showed a particularly large recombination time. The p-n junction in this wafer was observed to be displaced into the upper InP layer, which probably caused the behaviour.
Measurement of interface state characteristics of MOS transistor utilising charge-pumping techniques
- Author(s): W.V. Backensto and C.R. Viswanathan
- Source: IEE Proceedings I (Solid-State and Electron Devices), Volume 128, Issue 2, p. 44 –52
- DOI: 10.1049/ip-i-1.1981.0018
- Type: Article
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The determination of both the energy and the spatial distribution of interface states of an MOS transistor utilising charge-pumping measurements is described. The energy distribution of interface states is determined by measuring the charge-pumping current as a function of gate bias at several temperatures. Although the energy profile obtained shows several maxima and minima, a gradual increase in magnitude occurs as the band edge is approached. The spatial distribution of interface states is determined by measuring the frequency dependence of the charge-pumping current. The devices tested show an exponentially decreasing interface-state density away from the surface. Information is also obtained on capture crosssections from the frequency dependence of the charge-pumping current.
Switching properties of inversion-controlled metal-thin insulator -Si(n)-Si(p+) devices
- Author(s): G. Sarrabayrouse ; J. Buxo ; J.-P. Sebaa ; A. Essaid
- Source: IEE Proceedings I (Solid-State and Electron Devices), Volume 128, Issue 2, p. 53 –57
- DOI: 10.1049/ip-i-1.1981.0019
- Type: Article
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The paper discusses the physical conditions that must be fulfilled for switching to occur in metal-thin insulator-Si(n)-Si(p+) devices. It is shown that a necessary condition for the switching to occur is that the silicon surface at the insulator-semiconductor interface is inverted whatever is the originating mechanism that causes switching. Theoretical conclusions agree with experimental results.
Modelling the optical mis thyristor
- Author(s): S.E.-D. Habib and A.A. Eltoukhy
- Source: IEE Proceedings I (Solid-State and Electron Devices), Volume 128, Issue 2, p. 58 –60
- DOI: 10.1049/ip-i-1.1981.0020
- Type: Article
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The equivalence between the electrical and optical injection in the MIS thyristor (MIST) is established. Consequently, this equivalence is utilised to study the response of the device to wavelength and amplitude variations of the incident optical radiation. Compared with the punchthrough mode of operation of the MIST, the avalanche mode promises a higher sensitivity of the switching voltage to light, in addition to a better short-wavelength response.
Measurements of dipole domains in indium phosphide using a new point-contact probe
- Author(s): D.K. Hamilton
- Source: IEE Proceedings I (Solid-State and Electron Devices), Volume 128, Issue 2, p. 61 –67
- DOI: 10.1049/ip-i-1.1981.0021
- Type: Article
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Comparisons are made between previously published domain measurements using capacitive and point-contact probes. The design and characterisation of a new point-contact probe and associated differentiator are described along with an analysis of a model of the specimen and probe, showing that the two must be treatd together as one system, and that the resistance of the probe must be matched to the resistivity of the semiconductor. A fundamental limitation of the point-contact probe may be specimen heating at the probe point. Dipole-domain measurements agree with previous capacitive-probe results and lead to a velocity/field characteristics which suggests a 2-level electron-transfer process in the conduction band.
Proton-induced X-ray emission studies of generation impurities in silicon
- Author(s): B. Golja ; A.G. Nassibian ; D. Cohen
- Source: IEE Proceedings I (Solid-State and Electron Devices), Volume 128, Issue 2, p. 68 –72
- DOI: 10.1049/ip-i-1.1981.0022
- Type: Article
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In the paper we consider how proton-induced X-ray emission (PIXE), using high-energy protons (MeV), can be used as a nondestructive technique for studying impurities in silicon. The basic principles behind PIXE are presented and the PIXE system used is described. Concentrations of various impurities observed in silicon wafers have been determined and comparisons made with the spectrum obtained with the Rutherford backscattering technique.
Book review: Thermistors
- Author(s): P.L. Kirby
- Source: IEE Proceedings I (Solid-State and Electron Devices), Volume 128, Issue 2, page: 72 –72
- DOI: 10.1049/ip-i-1.1981.0023
- Type: Article
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