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IEE Proceedings I (Solid-State and Electron Devices)

Volume 127, Issue 6, December 1980

Volumes & issues:

Volume 127, Issue 6

December 1980

Current mechanism of tunnel m.i.s. solar cells
  • Author(s): O.M. Nielsen
  • Source: IEE Proceedings I (Solid-State and Electron Devices), Volume 127, Issue 6, p. 301 –307
  • DOI:  10.1049/ip-i-1.1980.0059
  • Type: Article
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  • p. 301 –307 (7)
    Dark current/voltage characteristics have been examined as a function of temperature for two structures of A1-pSi m.i.s. solar cells. The solar cells have been prepared with interfacial oxide thickness ranging from 10 Å to 20 Å. The results show that the diode saturation current Jo for all oxide thicknesses behave as a majority-carrier current, highly dependent on the effective metal-to-semiconductor barrier height øms and the oxide-tunnel exponent X1/2δ. From the illuminated current/voltage characteristics the sum of øms and (KT/q)X1/2δ is found to be in the range of 730–1025 mV, increasing with increasing oxide thicknessand acceptor concentration.
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Use of VOC/JSC measurements for determination of barrier height under illumination and for fill-factor calculations in Schottky-barrier solar cells
  • Author(s): P. Panayotatos  and  H.C. Card
  • Source: IEE Proceedings I (Solid-State and Electron Devices), Volume 127, Issue 6, p. 308 –311
  • DOI:  10.1049/ip-i-1.1980.0060
  • Type: Article
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  • p. 308 –311 (4)
    An experimental study has been made of metal-silicon solar cells, with thin Ag, Au, Cu, Fe and In electrodes. No intentional interfacial layers were introduced and the silicon surfaces were chemically prepared in such a way as to minimise the residual oxide layer. The characteristics of the devices were taken at various illumination levels and the effect of barrier height, series resistance and n-value on the open-circuit voltage and the fill factor were studied. Comparison between theoretical predictions and the experimental results show that Voc/Jsc measurements that provide the n-values appropriate for the expression for the open-circuit voltage also provide a reliable method for experimental barrier-height determination under illumination and that the above ‘true’ n-value should also be used in fill-factor calculations.
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Quasistatic and nonequilibrium phenomena in m.o.s. structures under the influence of a constant gate-current bias
  • Author(s): P.G.C. Allman  and  J.G. Simmons
  • Source: IEE Proceedings I (Solid-State and Electron Devices), Volume 127, Issue 6, p. 312 –316
  • DOI:  10.1049/ip-i-1.1980.0061
  • Type: Article
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  • p. 312 –316 (5)
    An experimental investigation is undertaken into the quasistatic and nonequilibrium response of an m.o.s. system to a constant gate-current bias. For the quasistatic condition, it is shown that the inverse total semiconductor capacitance can be extracted directly, in contrast to the slow-ramp quasistatic C/V measurement. Under nonequilibrium conditions the main aim has been to investigate the effect on the characteristics of current magnitude and temperature. The nonequilibrium characteristics are rich in structure and yield useful information on bulk-trap generation rate and interface trap emission.
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Switching in m.i.s.m. structures
  • Author(s): M. Darwish  and  K. Board
  • Source: IEE Proceedings I (Solid-State and Electron Devices), Volume 127, Issue 6, p. 317 –322
  • DOI:  10.1049/ip-i-1.1980.0062
  • Type: Article
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  • p. 317 –322 (6)
    Switching effects have been observed in metal-thin insulator-semiconductor structures in which a p-n junction is incorporated which plays a central role in the switching phenomenon. In this paper an alternative structure is considered in which the p-n junction is replaced by a Schottky barrier. Although the Schottky barrier is usually considered to be a majority carrier device, minority carrier injection into the semiconductor can occur under certain circumstances. It is the purpose of this paper to examine whether this minority carrier injection is sufficient to cause regenerative switching and to consider the effects on the d.c. switching characteristics of oxide thickness, Schottky-barrier height, and substrate doping density. Comparisons are made between a conventional m.i.s.s. having a p-n junction, and a Schottky-barrier device with similar parameters. Finally, a lateral V-groove structure is proposed as a means of implementing the device and preliminary results reported
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Models of modelocking a laser diode in an external resonator
Leaky modes in active three-layer slab waveguides
  • Author(s): R.W.H. Engelmann  and  D. Kerps
  • Source: IEE Proceedings I (Solid-State and Electron Devices), Volume 127, Issue 6, p. 330 –336
  • DOI:  10.1049/ip-i-1.1980.0064
  • Type: Article
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  • p. 330 –336 (7)
    We present a comprehensive numerical mode calculation based on a phenomenological theory for a three-layer slab waveguide with a refractive-index depression but finite gain in the centre region (leaky modes). The leaking rays and the refraction loss of the modes are discussed as well as their influence on the threshold conditions for typical stripe-geometry laser structures. Special attention is paid to the transition regime between refractive-index depression and enhancement. i.e. between leaky-mode ‘antiguiding’ and mode ‘guiding’. The results are compared with simple analytical formulas available from the literature.
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Erratum: General model for defect formation in silicon dioxide

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