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IEE Proceedings I (Solid-State and Electron Devices)

Volume 127, Issue 6, December 1980

Volume 127, Issue 6

December 1980

Current mechanism of tunnel m.i.s. solar cells
Use of VOC/JSC measurements for determination of barrier height under illumination and for fill-factor calculations in Schottky-barrier solar cells
Quasistatic and nonequilibrium phenomena in m.o.s. structures under the influence of a constant gate-current bias
Switching in m.i.s.m. structures
Models of modelocking a laser diode in an external resonator
Leaky modes in active three-layer slab waveguides
Erratum: General model for defect formation in silicon dioxide

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