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Volume 127
Issue 3
IEE Proceedings I (Solid-State and Electron Devices)
Volume 127, Issue 3, June 1980
Volumes & issues:
Volume 127, Issue 3
June 1980
Required minimum value of barrier height in minority-carrier m.i.s. solar cells
- Author(s): O.M. Nielsen
- Source: IEE Proceedings I (Solid-State and Electron Devices), Volume 127, Issue 3, p. 105 –108
- DOI: 10.1049/ip-i-1.1980.0020
- Type: Article
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The saturation currents of minority-and majority-carrier m.i.s. solar cells have been compared to find the value of the barrier height ϕ′ms, where the dominating saturation current changes from a majority-carrier current to a minority-carrier current. For an interfacial oxide layer of 20 Å, the value ofϕ′ms has been calculated to be in the range 750-800 mV, whereas for an oxide layer of 10 Å, ϕ′ms, is found to be about 900-950 mV.
Injection phase delay in high-power Baritt oscillators
- Author(s): S. Ahmad
- Source: IEE Proceedings I (Solid-State and Electron Devices), Volume 127, Issue 3, p. 109 –110
- DOI: 10.1049/ip-i-1.1980.0021
- Type: Article
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Large-signal injection phase delay in Baritt oscillators can be estimated from the measured d.c. and microwave characteristics of the device used, provided a constant transit time with bias current is assumed. This has been examined in the present work and a simple method has been described with a practical example.
Theory of switching in p-n-insulator (tunnel)-metal devices: thick-tunnel oxides and indirect tunnel effects
- Author(s): S.E.D. Habib and J.G. Simmons
- Source: IEE Proceedings I (Solid-State and Electron Devices), Volume 127, Issue 3, p. 111 –118
- DOI: 10.1049/ip-i-1.1980.0022
- Type: Article
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The four-layered m.i.s.s. device (metal-tunnel insulator-n-p semiconductor) displays a current-controlled negative resistance in its I/V characteristics. This switching mechanism is the result of a regenerative feedback interaction between the p-n junction and the metal-tunnel insulator-semiconductor parts of the device.The modes of operation of the m.i.s.s. can be classified into avalanche or punch-through mode devices; thin- or thick-tunnel oxide devices; direct-tunnel (e.g. (100)-oriented Si) or indirect tunnel (e.g. (111)-oriented Si) devices. A detailed model of the m.i.s.s. is developed to account for both the thick-tunnel oxide m.i.s.s. and the indirect-tunnel m.i.s.s.The latter two modes exhibit a higher holding voltage than that of the thin-tunnel oxide m.i.s.s. The holding voltage of the thick-tunnel oxide m.i.s.s. increases monotonically with the oxide thickness.
Inversion-controlled switching mechanism of m.i.s.s. devices
- Author(s): G. Sarrabayrouse ; J. Buxo ; A.E. Owen ; A. Munoz Yague ; J-P. Sabaa
- Source: IEE Proceedings I (Solid-State and Electron Devices), Volume 127, Issue 3, p. 119 –125
- DOI: 10.1049/ip-i-1.1980.0023
- Type: Article
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Experiments are reported on the switching characteristics of m.i. Si (n) Si(p+) devices with a thin oxide insulating layer (I). The influence of temperature, light and carrier injection into the n-layer are analysed. Theoretical interpretation is based on a model which takes into account the multiplication mechanism which occurs at the Si-SiO2 interface when it is inverted.
Electron and hole photocurrent effects on impatt oscillators
- Author(s): H.P. Vyas ; R.J. Gutman ; J.M. Borrego
- Source: IEE Proceedings I (Solid-State and Electron Devices), Volume 127, Issue 3, p. 126 –132
- DOI: 10.1049/ip-i-1.1980.0024
- Type: Article
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Experimental and theoretical results are presented to show the difference between electron- and hole-initiated avalanches on the microwave properties on impatt oscillators under optical illumination. This difference, arising from unequal electron- and hole-ionisation rates, is demonstrated with X-band Si impatt structures suitable for microwave-optical interactions. A large signal impatt model is extended to incorporate the difference between hole and electron photocurrent, with the intrinsic response time of the avalanche depending on photocurrent composition. The model gives good agreement with experimental results of the power dependence upon photocurrent, although additional power saturation mechanisms need to be considered at higher power levels.
Microcomputer-aided interface-state analysis
- Author(s): P.J. Martin and G.G. Roberts
- Source: IEE Proceedings I (Solid-State and Electron Devices), Volume 127, Issue 3, p. 133 –136
- DOI: 10.1049/ip-i-1.1980.0025
- Type: Article
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A semiautomatic measurement system has been developed for evaluating the electronic structure of the interface between an insulator and a semiconductor. The associated microcomputer possesses advanced software which leads to simple operation particularly when used in a real-time mode. An attractive feature of the technique is that admittance data are evaluated in the voltage domain using a modified version of the Simonne method. The Si-SiO2 junction has been used to demonstrate this novel approach although it is equally applicable to other semiconductor-insulator structures.
p-type InP/Langmuir film m.i.s. diodes
- Author(s): R.W. Sykes ; G.G. Roberts ; T. Fok ; D.T. Clark
- Source: IEE Proceedings I (Solid-State and Electron Devices), Volume 127, Issue 3, p. 137 –139
- DOI: 10.1049/ip-i-1.1980.0026
- Type: Article
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The paper reports for the first time the m.i.s. characteristics of p-type InP structures preparaed using a low temperature method. With organic films deposited using the langmuir-Blodgett technique, fairly conventional CV data have been obtained for both bulk single crystals and epitaxial layers, showing that at zero bias, the surface is depleted. Conductance peaks have been observed using weak illumination. The paper also contains a discussion of the principal factors influencing the interaface properties, including substrate etching prior to thin-film deposition.
Quasistatic and nonequilibrium phenomena in m.o.s. structures under the influence of a constant gate-current bias
- Author(s): P.G.C. Allman and J.G. Simmons
- Source: IEE Proceedings I (Solid-State and Electron Devices), Volume 127, Issue 3, p. 140 –146
- DOI: 10.1049/ip-i-1.1980.0027
- Type: Article
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The quasistatic and nonequilibrium response of an m.o.s. system containing bulk traps under constant gate-current conditions is analysed. It is shown that a particular advantage of the method is that the total semiconductor capacitance can be extracted directly from the curves, thus easing the analysis of quasistatic results for obtaining interface state density. For a specific range of operating conditions the resulting nonequilibrium characteristic is rich in structure, which allows for analysis of the bulk properties of the semiconductor.
Charge Coupled Devices and their Applications
- Author(s): R.C. Tozer
- Source: IEE Proceedings I (Solid-State and Electron Devices), Volume 127, Issue 3, page: 147 –147
- DOI: 10.1049/ip-i-1.1980.0028
- Type: Article
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Crystal Growth Bibliography
- Author(s): P.D. Greene
- Source: IEE Proceedings I (Solid-State and Electron Devices), Volume 127, Issue 3, page: 147 –147
- DOI: 10.1049/ip-i-1.1980.0029
- Type: Article
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Nondestructive Evaluation of Semiconductor Materials and Devices
- Author(s): M.J. Howes
- Source: IEE Proceedings I (Solid-State and Electron Devices), Volume 127, Issue 3, p. 147 –148
- DOI: 10.1049/ip-i-1.1980.0030
- Type: Article
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Erratum: Depletion-mode m.o.s.f.e.t. model including a field-dependent surface mobility
- Author(s): G. Baccarini ; F. Landini ; B. Riccò
- Source: IEE Proceedings I (Solid-State and Electron Devices), Volume 127, Issue 3, page: 148 –148
- DOI: 10.1049/ip-i-1.1980.0031
- Type: Article
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