IEE Proceedings G (Circuits, Devices and Systems)

IEE Proceedings G (Circuits, Devices and Systems)

Online ISSN 2053-9061
Print ISSN 0956-3768

Published from 1989-1993, IEE Proceedings G contained significant and original contributions on electronic circuits, solid-state electronic devices and systems. It covered the following topics: circuit theory and design, circuit analysis and simulation; CAD; filters; circuit implementations; cells and architectures for integration including VLSI; testability, fault-tolerant design, minimisation of circuits; electronic devices for technologies including nanoelectronics and MEMs; device and process characterisation; device parameter extraction schemes; the mathematics of circuits and systems theory; and testing and measurement techniques involving electronic circuits, circuits for industrial applications, sensors and transducers.

This journal was previously known as IEE Proceedings I (Solid-State and Electron Devices) 1980-1988. ISSN 0143-7100. more..

This journal was previously known as IEE Proceedings G (Electronic Circuits and Systems) 1980-1988. ISSN 0143-7089. more..

This publication is continued by IEE Proceedings - Circuits, Devices and Systems 1994-2006. ISSN 1350-2409. more..

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Equivalent circuit for a GaAs CCD
- Author(s): S. Pennathur and H.H.L. Kwok
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- p. 377 –382 (6)
  An equivalent circuit model was proposed for the charge transfer mechanisms in a GaAs charge coupled device (CCD). Realistic simulations were carried out to assess the model at different transfer times and for different sizes of the charge packet. A comparison was also made with an analytical model and the results were quite close. Simulations of the input and the output stages of the device were also examined. The key advantages of the equivalent circuit model appeared to be substantial reduction in the computing time in addition to its primary use in a circuit simulator.
Logic design based on negative differential resistance characteristics of quantum electronic devices
- Author(s): S. Mohan ; P. Mazumder ; G.I. Haddad ; R.K. Mains ; J.P. Sun
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- p. 383 –391 (9)
  New quantum electronic devices such as resonant tunnelling diodes and transistors have negative differential resistance characteristics that can be exploited to design novel high-speed circuits. The high intrinsic switching speed of these devices, combined with the novel circuit structures used to implement standard logic functions, leads to ultrafast computing circuits. The new circuit structures presented here provide extremely compact implementations of functions such as carry generation and addition. The most significant impact of these circuits on the field of logic design is the introduction of a totally new set of relative costs of various basic gates; reevaluation of the logic in the light of these new cost functions leads to ultrafast and compact designs.
Theoretical and experimental results for the inversion channel heterostructure field effect transistor
- Author(s): G.W. Taylor and P.A. Kiely
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- p. 392 –400 (9)
  New theoretical and experimental findings for the inversion channel HFET are presented to address the modelling needs of inversion channel opto-electronic integrated circuit (OEICs). This FET is well suited to OEICs since the gate is an ohmic contact (in contrast to a Schottky contact) controlling the channel conductivity from a substantial distance. Consequently, the region around the channel is formed as a graded index structure with a single or multiple quantum well active region which allows the FET to operate as a laser, a detector and an absorption modulator forming a complete component base for integration. It is shown that the threshold voltage of this FET demonstrates unique dependencies on charge sheet, barrier, and collector dopings, which allows wide design flexibility and a substantially higher operating voltage than other III–V FETS. The effect of device length on threshold is examined experimentally and it is found that the gradient dV_TH/dL may be positive or negative which raises the prospect that the condition dV_TH/dL ≃ 0 may be found to allow scaling to very small dimensions. The device threshold and the bipolar injection from the gate contact are controlled by a p contact to the collector region which serves as an additional gate for the FET.
Asymptotic stability of equilibrium points in dynamical neural networks
- Author(s): R. Perfetti
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- p. 401 –405 (5)
  In most applications of feedback neural networks, such as the realisation of associative memories, the asymptotic stability of specific equilibrium points is the main design requirement. Sufficient conditions are presented which simplify the checking that an isolated equilibrium point is asymptotically stable. Then, these conditions are generalised to the characterisation of all equilibrium points in an open region of the state space. Finally, an explicit lower bound on the exponential convergence rate, to an equilibrium, is derived.
Log-domain filtering: an approach to current-mode filtering
- Author(s): D.R. Frey
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- p. 406 –416 (11)
  A novel approach to filter design, based on Adams' [1] ‘log-domain’ filters, is proposed that yields a truly current-mode circuit realisation. Adams' idea, which was introduced in a limited context, is generalised to permit a complete distortionless synthesis procedure, which results in circuit implementations readily realisable using complementary bipolar processes. It is shown that, by introducing an exponential map on the state-space description of the desired linear system, a log-domain filter can be fully realised with transistors configured in current mirror-type groupings, current sources and capacitors. Owing to the mapping, the state variables are intrinsically related to current, and not voltage, in the resulting circuits, a fact that emphasises the current-mode nature of the design. A general biquadratic filter section is designed, and, following discussion of cascading sections, a seventh-order Chebychev lowpass filter is designed. All designed circuits are shown to be tunable over a two-decade range in frequency while their characteristics are accurately preserved, even for biquad sections whose f₀Q product is greater than f_T/10. The Chebychev filter is shown in simulation to possess nearly 60 dB dynamic range relative to 0.9% THD, with a cutoff frequency of nearly 5 MHz, using transistor models from AT&T's CBIC-R 300 MHz complementary bipolar process.

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IEE Proceedings G (Circuits, Devices and Systems)

Volumes & issues:

Volume 140 (1993)

Volume 139 (1992)

Volume 138 (1991)

Volume 137 (1990)

Volume 136 (1989)

Latest content

Equivalent circuit for a GaAs CCD

Logic design based on negative differential resistance characteristics of quantum electronic devices

Theoretical and experimental results for the inversion channel heterostructure field effect transistor

Asymptotic stability of equilibrium points in dynamical neural networks

Log-domain filtering: an approach to current-mode filtering

Most viewed content for this Journal

Most cited content for this Journal