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IEE Journal on Solid-State and Electron Devices

Volume 3, Issue 3, May 1979

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Volume 3, Issue 3

May 1979

The change in the interface-state Fermi level of M.I.S. solar cells when going from dark to illuminated conditions
Influence of interface states on the charge injection in m.n.o.s. memory devices
Relationship between carrier mobility and electron concentration in silicon heavily doped with phosphorus
Theoretical analysis of the Hall effect photovoltaic cell
Low-frequency pulsations in the output intensity and multimode operations of GaAs-AIGaAs C.W. diode laser coupled to an external dispersive cavity.
Two-dimensional position-sensitive photodetector with high linearity made with standard i.c.-technology

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