IEE Journal on Solid-State and Electron Devices
Volume 3, Issue 2, March 1979
Volume 3, Issue 2
March 1979
Determination of complete carrier density and drift mobility profiles in thin semiconductor layers
- Author(s): R.S. Huang and P.H. Ladbrooke
- Source: IEE Journal on Solid-State and Electron Devices, Volume 3, Issue 2, p. 29 –32
- DOI: 10.1049/ij-ssed.1979.0009
- Type: Article
- + Show details - Hide details
-
p.
29
–32
(4)
A technique is described which utilises a long-gate m.o.s.f.e.t. structure to measure carrier density and drift mobility profiles in submicrometre epitaxial and ion-implanted layers. Both profiles are recovered right up to the semiconductor surface. Application of the method to studying carrier transport processes in layers for short-gate f.e.t.s indicates that mobility degradation due to diffuse surface scattering occurs, resulting in a surface-mobility/bulk-mobility ratio varying between 0.5 and 1
Some design aspects of m.o.s.l.s.i. operational amplifiers
- Author(s): Bernd Hoefflinger ; Klaus Schumacher ; Hans Sibbert
- Source: IEE Journal on Solid-State and Electron Devices, Volume 3, Issue 2, p. 33 –40
- DOI: 10.1049/ij-ssed.1979.0010
- Type: Article
- + Show details - Hide details
-
p.
33
–40
(8)
An m.o.s. operational amplifier suitable for large-scale integration using n-channel enhancementdepletion technology is reported. It has a large gain of 94 dB, a unity-gain bandwidth of 1 MHz with a small power dissipation of 2.4 mW and it occupies only 0.2 mm2. These miniaturised amplifiers require computeraided design, and the capabilities of the nonlinear d.o.m.o.s. model and computer program are demonstrated. Simple equations for exploratory design and comparison with designs using weak-inversion, complementary or bipolar transistors are also discussed.
Current/voltage characteristics of transistors operating in current-mode second breakdown
- Author(s): J.E. Carroll and P.J. Probert
- Source: IEE Journal on Solid-State and Electron Devices, Volume 3, Issue 2, p. 41 –50
- DOI: 10.1049/ij-ssed.1979.0011
- Type: Article
- + Show details - Hide details
-
p.
41
–50
(10)
The current/voltage characteristics of Si n-p-ntransistors, when the device is pulsed into second breakdown for several nanoseconds, are studied. The collector/base characteristics have limits given by Ie= 0 which can be modelled approximately by neglecting recombination, and by Ib= 0 which requires recombination to be fully understood. This later condition is closely analagous to the Kirk effect with a plasma of holes and electrons close to the base region. In all these second-breakdown states the electron multiplication factor is low, typically less than 1.33, so that there is little useful multiplication gain. Second breakdown thus prevents the transistor from being used as a 3-terminal avalanche transistor. Failure at high current levels occurs most readily in the Ie= 0 state. The cutback in voltage and increase in current can be limited by tailoring the collector impurity profile. These two features suggest ways in which transistors may be improved to protect them against short pulse burnout via current-mode second breakdown.
Effects of minority-carrier storage at the interface states on the fill factor of m.i.s. solar cells
- Author(s): Otto M. Nielsen
- Source: IEE Journal on Solid-State and Electron Devices, Volume 3, Issue 2, p. 51 –55
- DOI: 10.1049/ij-ssed.1979.0012
- Type: Article
- + Show details - Hide details
-
p.
51
–55
(5)
Current/voltage characteristics obtained under dark and illuminated conditions have been examined for Al-p-Si M.I.S. solar cells. The results obtained show that the voltage across the cells taken at the maximum powerpoint is typically 50 mV smaller when the cells are illuminated compared to the voltage at the same point in darkness. This is explained as an increase in the recombination current and as an increased concentration of minority carriers at the interface states of about 1012cm−2when going from dark to illuminated conditions. The result is that the fill factor obtained from the illuminated characteristic is about 9% smaller than if the fill factor is calculated from the dark characteristics.
Most viewed content for this Journal
Article
content/journals/ij-ssed
Journal
5
Most cited content for this Journal
We currently have no most cited data available for this content.
