Online ISSN
1751-8776
Print ISSN
1751-8768
IET Optoelectronics
Volume 5, Issue 3, June 2011
Volumes & issues:
Volume 5, Issue 3
June 2011
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- Author(s): S. Sweeney
- Source: IET Optoelectronics, Volume 5, Issue 3, page: 99 –99
- DOI: 10.1049/iet-opt.2011.9057
- Type: Article
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- Author(s): M.A. Majid ; D.T.D. Childs ; R. Airey ; K. Kennedy ; R.A. Hogg ; E. Clarke ; P. Spencer ; R. Murray
- Source: IET Optoelectronics, Volume 5, Issue 3, p. 100 –104
- DOI: 10.1049/iet-opt.2010.0041
- Type: Article
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The analysis of molecular-beam epitaxy (MBE) grown bilayer quantum dot (QD) laser material is reported here. Specifically, gain characteristics of 5× ‘bilayer’ QDs with GaAs caps and 5× ‘single’ QD layers with InGaAs caps were studied experimentally. A transition of lasing from the ground state to lasing via the first excited state, and subsequently the second excited state is observed with increasing threshold gain for both the laser structures. A 50% increase in saturated modal gain is observed for bilayer laser as compared to single-layer samples. Further analysis of the bilayer sample using the multi-section technique allows the gain and absorption spectrum to be obtained. - Author(s): C.-Y. Lin ; F. Grillot ; N.A. Naderi ; Y. Li ; J.H. Kim ; C.G. Christodoulou ; L.F. Lester
- Source: IET Optoelectronics, Volume 5, Issue 3, p. 105 –109
- DOI: 10.1049/iet-opt.2010.0039
- Type: Article
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The stability of a quantum dot (QD) mode-locked laser is experimentally shown to bifurcate under resonant optical feedback, which leads to either a reduction or an enhancement of the noise within the laser's cavity. These two behaviours, which are theoretically known as the nearly exact resonant and stably resonant feedback conditions, are characterised using the RF linewidth of the QD device. Under the stably resonant case with relatively low feedback strength and constant temperature control, the RF linewidth narrows to a value as low as 170 Hz. Noise enhancement, which is a precursor to coherence collapse, is observed in the device under the nearly exact resonant case. Under proper conditions, the results presented show that the combination of external optical feedback and the relatively low threshold of QD mode-locked lasers make them attractive chip-scale sources for ultra-low noise photonic applications. - Author(s): N. Khan ; K. Schires ; A. Hurtado ; I.D. Henning ; M.J. Adams
- Source: IET Optoelectronics, Volume 5, Issue 3, p. 110 –113
- DOI: 10.1049/iet-opt.2010.0061
- Type: Article
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The authors have studied the effects of polarised optical injection in a 1550 nm vertical-cavity surface-emitting laser (VCSEL) operated at currents up to 4.5 times threshold. Regions of stable injection locking have been measured for cases where the injected signal is polarised to match one of the two polarisations of the fundamental transverse mode of the solitary VCSEL. In addition regions of polarisation switching have been found for the case where the input polarisation is matched to that of the subsidiary mode of the solitary VCSEL. The variation of this behaviour with current has been investigated. - Author(s): A. Murakami and K.A. Shore
- Source: IET Optoelectronics, Volume 5, Issue 3, p. 114 –120
- DOI: 10.1049/iet-opt.2010.0049
- Type: Article
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In the analysis of chaos, conventional frequency-spectrum analysis has largely been overlooked in development of novel ‘non-linear time series analysis’. In particular, the phase information of chaos in the frequency spectrum has received comparatively little attention. Here the authors present an analysis of the spectral phase of chaos by means of averaged Fourier spectra for the representative Lorenz and Rössler chaotic system models. It is demonstrated that a random distribution of the phase in the frequency domain is obtained from one shot of chaotic data. From averaging the chaotic spectrum over many observations it is revealed that the random phase distribution converges to zero in the mean-phase spectrum. It is also demonstrated that, by utilising the zero mean-phase property, the non-zero phase associated with very small periodic signals hidden in chaotic spectrum allows their identification within the chaos. - Author(s): C. Kaspari ; G. Blume ; D. Feise ; K. Paschke ; G. Erbert ; M. Weyers
- Source: IET Optoelectronics, Volume 5, Issue 3, p. 121 –127
- DOI: 10.1049/iet-opt.2010.0034
- Type: Article
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Tapered diode lasers in the red spectral range with nearly diffraction-limited output are prospective light sources for display applications and analytic methods such as fluorescence microscopy. The authors have studied the influence of the number of quantum wells and the lateral design of 660 nm high-power tapered diode lasers on the output power and the beam quality. From these investigations the authors have developed an optimised design and achieved a record output power of 1.5 W with a beam quality close to the diffraction limit (M2(1/e2)=1.5). The authors also demonstrate operation over 4500 h at power levels between 0.5 and 1.0 W. - Author(s): R.H. Poolman ; E.A. Muljarov ; A.L. Ivanov
- Source: IET Optoelectronics, Volume 5, Issue 3, p. 128 –132
- DOI: 10.1049/iet-opt.2010.0063
- Type: Article
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The authors propose a scheme to achieve strong modification of the light properties in the terahertz (THz) range and in particular up to 70% changes in the THz reflectivity of CuCl, TlCl and LiNbO3 crystals. This is realised by using transverse optical (TO) phonons as a mediator in the interaction between an acoustic wave (AW) and a THz light field, via the strong anharmonicities of the interatomic potential. Their numerical modeling of CuCl, TlCl and LiNbO3 crystals also predicts that these effects are tunable by applying various coherent AWs from sub-GHz to few GHz frequency. The length of the interaction between electromagnetic and acoustic fields is also greatly reduced compared to conventional acousto-optics. The modifications of the reflectivity spectrum are because of single and multiple intra-branch phonon transitions within the TO-phonon polariton dispersion branches.
Editorial: Selected papers from the Semiconductor and Integrated Optoelectronics (SIOE'10) Conference
Strain engineered bilayers for extending the operating wavelength of quantum dot lasers
RF linewidth of a monolithic quantum dot mode-locked laser under resonant feedback
Current-dependence of polarisation switching and locking in an optically injected 1550 nm vertical-cavity surface-emitting laser
Mean spectral phase and detection of masked periodic signals in chaotic carriers
Optimisation of 660 nm high-power tapered diode lasers
Far-infrared response of acoustically modulated transverse optical-phonon polaritons
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