IET Optoelectronics
Volume 14, Issue 3, June 2020
Volumes & issues:
Volume 14, Issue 3
June 2020
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- Source: IET Optoelectronics, Volume 14, Issue 3, page: 99 –99
- DOI: 10.1049/iet-opt.2020.0054
- Type: Article
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99
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- Author(s): Si Chen ; Henry Francis ; Chih-Hua Ho ; Yun-Ran Wang ; Kai-Jun Che ; Mark Hopkinson ; Chao-Yuan Jin
- Source: IET Optoelectronics, Volume 14, Issue 3, p. 100 –103
- DOI: 10.1049/iet-opt.2019.0064
- Type: Article
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In this work, the authors demonstrate the control of quality factor (Q-factor) is laterally coupled vertical cavities. A 3 μm-side-length square cavity directly connected to a 1.5 μm-width, 10 μm-length Fabry–Perot (FP) cavity has been fabricated and measured. Dynamic tuning of the Q-factor has been successfully observed by bringing the square cavity and FP cavity into resonance. The vertical-cavity-based Q-factor control scheme provides a new choice for the modulation of light and holds potentials for applications associated with optical information processing.
- Author(s): Paula L. Pagano ; Damián Presti ; Roberto R. Peyton ; Fabian A. Videla ; Gustavo A. Torchia
- Source: IET Optoelectronics, Volume 14, Issue 3, p. 104 –108
- DOI: 10.1049/iet-opt.2019.0068
- Type: Article
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104
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The aim of this work is to design an integrated optical ring resonator to be implemented in LiNbO3 with a 2.5 mm radius and an operating wavelength of 1550 nm. Considering these ring parameters, a free spectral range of 71.54 pm and a quality factor of ∼ were calculated. The authors apply results to improve the implementation of femtosecond laser writing in lithium niobate crystals. As it is well-known finite difference time domain method requires large memory and time for processing circuits with large footprint (few square mm), in contrast, the beam propagation method allows to simulate large bends in a simple way. RSoft suite design tools commonly represent circles by closed polygons whose geometrical parameters are not optimised to obtain bending losses as least as possible, as suggested by coherent coupling theory. In this sense, the suitable determination of a splice angle (in this case ), shape and length for segments are key parameters in the ring design. For this purpose, an ad hoc software was implemented to overcome this drawback. In summary, a 250 sided polygon side showed a suitable coupling performance and established a new layout approach for middle range rings.
- Author(s): Md Ghulam Saber ; Luhua Xu ; Rakibul Hasan Sagor ; Yun Wang ; Amar Kumar ; Deng Mao ; Eslam El-Fiky ; David Patel ; Alireza Samani ; Zhenping Xing ; Maxime Jacques ; Yannick D'Mello ; David V. Plant
- Source: IET Optoelectronics, Volume 14, Issue 3, p. 109 –119
- DOI: 10.1049/iet-opt.2019.0057
- Type: Article
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109
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Photonic integrated circuits (PICs) suffer from birefringence due to high-index contrast. Polarisation handling devices improve the performance of the PICs by reducing the polarisation-dependent dispersion and loss. Furthermore, there is a growing interest in building polarisation division multiplexed transceivers using PICs, which require polarisation management. The authors provide an overview of the recent work on developing polarisation handling devices such as polarisation beam splitters and polarisers in indium phosphide and silicon-on-insulator platforms for optical communications and sensing applications. These devices expand the PICs library of polarisation handling devices and can be used to design more complex circuits with advanced or new functionalities.
- Author(s): Mauricio Tosi ; Alejandro Fasciszewki ; Laureano A. Bulus Rossini ; Pablo A. Costanzo Caso
- Source: IET Optoelectronics, Volume 14, Issue 3, p. 120 –124
- DOI: 10.1049/iet-opt.2019.0079
- Type: Article
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120
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In this work, the authors review different design setups of polarisation beam splitters (PBSs) developed in Si3N4 platforms. They analyse different approaches based on directional couplers and interferometers. Then the authors present the design and simulation results of a PBS based on two cascaded multi-mode interferometers that operate in the whole C-band. Finally, the authors compare the devices in terms of insertion loss, extinction ratio, bandwidth, footprint and fabrication tolerances.
- Author(s): Yannick D'Mello ; Orad Reshef ; Santiago Bernal ; Eslam El-fiky ; Yun Wang ; Maxime Jacques ; David V. Plant
- Source: IET Optoelectronics, Volume 14, Issue 3, p. 125 –135
- DOI: 10.1049/iet-opt.2019.0077
- Type: Article
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125
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Rapid advances in high-resolution chip lithography have accelerated nanophotonic device development on the silicon-on-insulator (SOI) platform. The ability to create sub-wavelength features in silicon has attracted research in photonic band and dispersion engineering and consequently made available a wide array of device functionalities. By drawing on recent demonstrations, the authors review how periodic, sub-wavelength structures are used for passive wave manipulation in SOI device design. The optical response is evaluated for both orthogonal polarisations at the telecom wavelengths of 1310 and 1550 nm. The results offer a versatile toolkit for the integration of these features in conventional nanophotonic device geometries. Notable benefits include a fine control of dispersion, wavelength and polarisation selectivity, and broadband performance.
- Author(s): Lianping Hou ; Song Tang ; Bin Hou ; John H. Marsh
- Source: IET Optoelectronics, Volume 14, Issue 3, p. 136 –142
- DOI: 10.1049/iet-opt.2019.0089
- Type: Article
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The authors introduce four kinds of terahertz photonics components based on photonic integrated circuits (PICs). A PIC-based integrated optoelectronic synthesiser for THz communications is described, which can be tuned continuously over the range 0.254–2.723 THz using photomixing. A laterally-coupled dual-grating distributed feedback laser (DFB) diode integrated with an electroabsorption modulator is used to generate an 820 GHz beat signal. THz signal production is reported using a dual-wavelength DFB diode laser with a two-section phase-shifted sampled Bragg grating. Finally, a THz source at 640 GHz, based on a sampled grating distributed Bragg reflector semiconductor mode-locked laser diode, is reported offering superior reproducibility, controllability, and a wider operation range than other reported mode-locked THz laser diodes. Each of these sources is a monolithic construction emitting light at 1.5 µm. The light can be amplified in an erbium-doped fibre amplifier, delivered over silica optical fibre and used to generate THz radiation via a photodiode antenna or photoconductive antenna in a remote location.
- Author(s): Barturen Mariana ; Maglio Benjamin ; Costanzo Caso Pablo Alejandro
- Source: IET Optoelectronics, Volume 14, Issue 3, p. 143 –147
- DOI: 10.1049/iet-opt.2019.0078
- Type: Article
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143
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Second-order non-linear susceptibility () is the cause of many non-linear processes in optics including second harmonic generation, sum frequency generation and difference frequency generation. Optical frequency combs based on , i.e. quadratic frequency combs, hold the promise of reducing the devices power consumption and footprint since materials present a stronger non-linearity than materials, which suggests that higher efficiencies can be achieved. In this work, we will revisit the latest quadratic combs experimental advances, concerning power threshold, span and wavelength conversion efficiency.
Guest Editorial: Selected Papers from Semiconductor and Integrated Optoelectronics (SIOE) 2019
Control of quality factor in laterally coupled vertical cavities
Design conditions in the middle range for implementation of integrated ring resonators in LiNbO3 by direct laser writing
Integrated polarisation handling devices
Silicon nitride polarisation beam splitters: a review
Integration of periodic, sub-wavelength structures in silicon-on-insulator photonic device design
Photonic integrated circuits for terahertz source generation
Latest advances in optical frequency combs based on quadratic non-linearity
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