Online ISSN
1350-911X
Print ISSN
0013-5194
Electronics Letters
Volume 9, Issue 2, 25 January 1973
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Volume 9, Issue 2
25 January 1973
Use of a surface-acoustic-wave delay line to provide pseudocoherence in a clutter-reference pulse Doppler radar
- Author(s): M.A.C.S. Brown ; W.J. Hannis ; J.M. Skinner ; D.K. Turton
- Source: Electronics Letters, Volume 9, Issue 2, p. 17 –18
- DOI: 10.1049/el:19730012
- Type: Article
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A surface-acoustic-wave delay line has been used to provide a coherent reference signal in a small-pulse Doppler radar. Preliminary experiments using the device gave a 10–12 dB gain in Doppler signal when compared with a clutter reference system operating in a low-clutter environment. A simple theory is given which describes expected performance when using noncoherent detection.
Effects of boron density on radiation resistance of copper-contaminated n/p type silicon solar cells
- Author(s): Yukio Kato and Akira Usami
- Source: Electronics Letters, Volume 9, Issue 2, p. 18 –19
- DOI: 10.1049/el:19730013
- Type: Article
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The radiation-resistance properties of copper-contaminated n/p type cells are observed only when the copper concentration is larger than the boron density in the bulk region of the cells. The values of Δ(1/L2) on n/p type cells are not always proportional to the boron density in the bulk region.
Low-field tunnelling current in thin-oxide m.n.o.s. memory transistors
- Author(s): H. Maes and R. van Overstraeten
- Source: Electronics Letters, Volume 9, Issue 2, p. 19 –21
- DOI: 10.1049/el:19730014
- Type: Article
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An expression for the tunnelling current between the silicon bands and the traps located in the silicon nitride, in thin-oxide m.n.o.s. memory transistors under low-field conditions, is derived. The theoretical results are compared with available experimental data, and the parameters for the trap distribution are calculated. The agreement with experimental results is satisfactory.
Acoustic surface waves on paratellurite
- Author(s): G. Simpson
- Source: Electronics Letters, Volume 9, Issue 2, p. 21 –22
- DOI: 10.1049/el:19730015
- Type: Article
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Numerical calculations of surface-wave properties and their temperature dependence have been carried out for the principal planes of paratellurite. The surface-wave velocity is shown to have large anisotropy, and several directions with zero temperature coefficients of delay are found.
Statistical approach to the prediction of m.o.s.-device performance
- Author(s): B.J. Hagan and J.A. Magowan
- Source: Electronics Letters, Volume 9, Issue 2, p. 23 –24
- DOI: 10.1049/el:19730016
- Type: Article
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A method of statistical analysis is presented for the obtaining of the probability-density function of a performance parameter defined as a function of control parameters with known probability-density functions. Included is an example of the technique applied to the input-voltage/output-voltage relationship of an m.o.s. integrated invertor. The method has the advantage of being significantly faster than a comparable Monte Carlo simulation.
2-port λG/4 waveguide standard of voltage standing-wave ratio
- Author(s): R.W. Beatty
- Source: Electronics Letters, Volume 9, Issue 2, p. 24 –26
- DOI: 10.1049/el:19730017
- Type: Article
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A new calculable standard of voltage-reflection coefficient and voltage standing-wave ratio consists of a quarter-guide-wavelength section of waveguide having cross-sectional dimensions different from those of the waveguide system into which it is inserted. Design equations are given for waveguide of rectangular and coaxial cross-sections.
Rectangular horn with dielectric-slab insert
- Author(s): R. Ashton and R. Baldwin
- Source: Electronics Letters, Volume 9, Issue 2, p. 26 –27
- DOI: 10.1049/el:19730018
- Type: Article
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The theoretical field distribution is derived for a rectangular horn with a thin dielectric slab placed centrally along the H plane. The theoretical radiation patterns of this horn are compared with experimental patterns, and advantages of low sidelobes and constant beamwitdth are found.
Observation on the construction of c sets in incompletely specified state tables
- Author(s): R.G. Bennetts and F.W.M. Stentiford
- Source: Electronics Letters, Volume 9, Issue 2, p. 27 –28
- DOI: 10.1049/el:19730019
- Type: Article
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In a recent paper by Bennetts, Wahington and Lewin that was concerned with the reduction of the number of states in a sequential state table, a short cut, based on a theorem concerning nontransitive relationships, was proposed. This note generalises the theorem, and asks whether this more general form has any applications to state-table-reduction techniques.
Characteristics of a gallium-arsenide travelling-wave amplifier with Schottky-barrier contacts
- Author(s): H. Kanbe ; N. Shimizu ; K. Kumabe
- Source: Electronics Letters, Volume 9, Issue 2, p. 29 –30
- DOI: 10.1049/el:19730020
- Type: Article
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Experimental results of the dependence of small-signal gain on bias voltages, applied to Schottky-barrier contacts which are r.f. input and output terminals of a gallium-arsenide travelling-wave amplifier are reported. In the optimum bias condition, a maximum net gain of 10 dB at 6.6 GHz in d.c. operation has been observed.
Band-splitting filters in oversized rectangular waveguide
- Author(s): Udo Unrau
- Source: Electronics Letters, Volume 9, Issue 2, p. 30 –31
- DOI: 10.1049/el:19730021
- Type: Article
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The advantages of a new band-splitting network made from oversized rectangular waveguide are discussed in comparison with filters in circular waveguide for TE°01 telecommunication systems. Measurements are given.
State-space description of a multirate digital filter
- Author(s): K.M. Wong and R.A. King
- Source: Electronics Letters, Volume 9, Issue 2, p. 32 –33
- DOI: 10.1049/el:19730022
- Type: Article
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The concept of multirate sampling in a digital filter is discussed, and a generalised method using the state-space technique of describing and analysing a 2nd-order multirate digitalfilter is presented.
Signal-flowgraph representation of electronic-amplifier networks
- Author(s): A.W. Keen and G. Usui
- Source: Electronics Letters, Volume 9, Issue 2, p. 33 –34
- DOI: 10.1049/el:19730023
- Type: Article
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It is shown that the basic action of the differential-input earthed-output type of operational amplifier may be given a flowgraph representation with a type of graph that is more general than those of Coates and Mason. Examples of embedded amplifiers are given to show the use of these graphs for the analysis of particular amplifier circuits.
Direct modulation of double-heterostructure lasers at rates up to 1 Gbit/s
- Author(s): M. Chown ; A.R. Goodwin ; D.F. Lovelace ; G.H.B. Thompson ; P.R. Selway
- Source: Electronics Letters, Volume 9, Issue 2, p. 34 –36
- DOI: 10.1049/el:19730024
- Type: Article
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Mesa-stripe double-heterostructure lasers operating at room temperature with direct-current bias close to threshold have been directly modulated at gigabit rates. The distortion and ringing effects expected at these frequencies as a result of resonant coupling between photon- and electron-density distributions were found to be suppressed over a range of bias levels. This is thought to result from the multimode behaviour of the device.
Low-noise wideband indium-phosphide transferred-electron amplifiers
- Author(s): P.W. Braddock and K.W. Gray
- Source: Electronics Letters, Volume 9, Issue 2, p. 36 –37
- DOI: 10.1049/el:19730025
- Type: Article
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X band pulsed, InP transferred-electron reflection amplifiers have been characterised by a study of the small-signal admittance, the large-signal dynamic conductance and the noise figure. These measurements have been made as functions of voltage, frequency and temperature on a number of different vapour epitaxial layers. The lowest observed noise figure was 8.8 dB at 10.0 GHz. An instantaneous bandwidth of more than 4 GHz at 7 dB gain has been obtained using a simple impedance-equalisation circuit.
Reflection coefficient of dielectric-loaded waveguide bends
- Author(s): M.A.K. Hamid
- Source: Electronics Letters, Volume 9, Issue 2, p. 37 –38
- DOI: 10.1049/el:19730026
- Type: Article
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Experimental data indicate that the reflection-coefficient/frequency value in the feed section of a rectangular waveguide bend is significantly reduced if the sharp edges of the bend are loaded with disc-shaped dielectric materials.
Rapid method suitable for liquids and powders for determination of relative permittivities in the microwave region
- Author(s): M. Kent
- Source: Electronics Letters, Volume 9, Issue 2, p. 39 –40
- DOI: 10.1049/el:19730027
- Type: Article
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A stripline method is described for the rapid measurement of dielectric permittivity εr′ which can be instrumented to be direct-reading in terms of εr′. The measurement is independent of loss factor and is applicatble for permittivities from 2 up to 20 with a reasonable accuracy. Above about 20, the accuracy falls with increasing εr′.
Radiation characteristics of waveguide-excited dielectric spheres with matched sphere-air boundary
- Author(s): P.S. Neelakantaswamy and D.K. Banerjee
- Source: Electronics Letters, Volume 9, Issue 2, p. 40 –41
- DOI: 10.1049/el:19730028
- Type: Article
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The results of experiments on the radiation characteristics of circular-waveguide-excited dielectric spheres with matched sphere-air boundaries are reported. The test data have shown that a waveguide-excited dielectric sphere, backed by a metallic hemisphere and with simulated quarter-wavelength matching at the dielectric–air boundary through surface perturbations, produces a directive pattern with a low side-lobe level, increased on-axis gain and reduced 3 dB beam-width, as compared with a simple wavegudie-excited dielectric sphere of the same diameter and an optimum horn with an aperture of identical cross-sectional area. Also, it presents a low voltage standing-wave ratio over the waveguide band.
Simulation of p.c.m. transmission system for use in subscriber network
- Author(s): R.P. Lorétan
- Source: Electronics Letters, Volume 9, Issue 2, p. 42 –43
- DOI: 10.1049/el:19730029
- Type: Article
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The extension of p.c.m. techniques to telephone and data subscribers requires a cheap transmission system that works over a wide range of different cable lengths and diameters and that is compatible with existing analogue services. Simulation on a digital computer and interactive optimisation show the feasibility of such a system.
Numerical calculation of low-frequency capacitance/voltage curves of m.o.s. capacitors with nonconstant doping profiles
- Author(s): G. Panigrahi
- Source: Electronics Letters, Volume 9, Issue 2, p. 43 –44
- DOI: 10.1049/el:19730030
- Type: Article
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It is demonstrated how a numerical solution of Poisson's equation can be applied to the calculation of low-frequency capacitance-voltage curves of m.o.s. capacitors with nonconstant doping profiles. Calculation by uniform-doping approximation introduces little error, but it can be avoided, if necessary, by employing the present method.
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