Online ISSN
1350-911X
Print ISSN
0013-5194
Electronics Letters
Volume 8, Issue 8, 20 April 1972
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Volume 8, Issue 8
20 April 1972
Measurement of subtransient reactance using a thyristor
- Author(s): A.D. Cox
- Source: Electronics Letters, Volume 8, Issue 8, page: 189 –189
- DOI: 10.1049/el:19720138
- Type: Article
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p.
189
(1)
This method is based on the measurement of the step in the terminal voltage which occurs when a thyristor is employed as a switch between the supply and an inductive load of known inductance. It can be used to measure the subtransient reactance of a synchronous generator or the reactive part of the output impedance of an infinite busbar.
Anomalies in attenuation and emission by rain at 37 GHz (8.1 mm)
- Author(s): D.L. Croom ; P.G. Davies ; R.J. Powell
- Source: Electronics Letters, Volume 8, Issue 8, p. 189 –191
- DOI: 10.1049/el:19720139
- Type: Article
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p.
189
–191
(3)
Comparisons of rain-attenuation measurements at 37 GHz, obtained by using the Sun as a source, with those inferred from sky-emission observations, show that large errors can arise in the latter technique owing to variation of the apparent absorber temperature. This is possibly because of strong scattering associated with a nonuniform distribution of attenuation across the sky.
Floating-point dynamic-variable-range multiple-precision operators
- Author(s): L. Frecon and L. Claire
- Source: Electronics Letters, Volume 8, Issue 8, p. 191 –193
- DOI: 10.1049/el:19720140
- Type: Article
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p.
191
–193
(3)
To unify numerical techniques in scientific calculations and control processes, a systematic numerical-data word-oriented method is proposed. The number of separate arithmetic instructions required is drastically reduced. Wired simple-precision floating-point operators can be used alternatively as autonomous operators or as basic cells for multiple-precision operators.
Application of inhomogeneous dielectric loading to coaxial resonators
- Author(s): B. Chambers
- Source: Electronics Letters, Volume 8, Issue 8, p. 193 –194
- DOI: 10.1049/el:19720141
- Type: Article
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p.
193
–194
(2)
A technique for improving the Q factor of air-filled coaxial resonators by inhomogeneous dielectric loading is reported.
New time-of-flight technique for measuring drift velocity in semiconductors
- Author(s): A.G.R. Evans ; P.N. Robson ; M.G. Stubbs
- Source: Electronics Letters, Volume 8, Issue 8, p. 195 –196
- DOI: 10.1049/el:19720142
- Type: Article
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p.
195
–196
(2)
A microwave time-of-flight method for measuring the v/E characteristic of semiconductors is described. Results taken on a sample of gallium arsenide, using this technique, are shown to be in good agreement with those obtained from the same sample by the more conventional time-of-flight method.
Perturbation theory for electromagnetic radiation in magnetoplasma
- Author(s): T.N.C. Wang
- Source: Electronics Letters, Volume 8, Issue 8, p. 196 –198
- DOI: 10.1049/el:19720143
- Type: Article
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p.
196
–198
(3)
A new perturbation technique is developed for resolving electromagnetic-radiation problems in a magnetoplasma with a weak anisotropy. The technique provides the capability of computing the full-wave fields in analytically closed form. Each successive term in the iterative solution is smaller than the preceding one by a small parameter of the anisotropy. As an example, the technique is used to calculate the Green function for a δ function source oriented parallel to the static magnetic field.
Reply to ‘Comment on Can a pulse excitation smaller than kT be detected?’
- Author(s): D.G. Maeder
- Source: Electronics Letters, Volume 8, Issue 8, p. 198 –199
- DOI: 10.1049/el:19720144
- Type: Article
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p.
198
–199
(2)
An amplifier with noise densities iamp2 and uamp2 has a pulse-energy sensitivity ≈ iampuamp. This limit applies not only to charge pulses in a capacitor, but also to oscillations in a high-Q-factor resonator operated at an arbitrary temperature T if delay-line filtering is used. Q does not need to be larger than 4kT/R0iamp2, where Ro = √(L/C).
Analysis of worst-case gain for Nth-order transfer functions realised by cascaded 2nd-order networks
- Author(s): I.E. Berkovics and G.S. Moschytz
- Source: Electronics Letters, Volume 8, Issue 8, p. 199 –200
- DOI: 10.1049/el:19720145
- Type: Article
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p.
199
–200
(2)
Given the s-plane tolerance domains of the poles and zeros of a filter transfer function, a method is presented of finding, by computer, the worst-case limits of the corresponding gain function in a given frequency range.
Influence of launching horn on radiation characteristics of a dielectric cone feed
- Author(s): P.J.B. Clarricoats and C.E.R.C. Salema
- Source: Electronics Letters, Volume 8, Issue 8, p. 200 –202
- DOI: 10.1049/el:19720146
- Type: Article
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p.
200
–202
(3)
The influence of the launching horn on the radiation pattern of dielectric-cone feeds is investigated theoretically and experimentally. A method is proposed for the reduction in the level of wide-angle sidelobes by the introduction of an absorbent sheath.
Numerical check on the accuracy of spherical-wave expansions
- Author(s): Arthur C. Ludwig
- Source: Electronics Letters, Volume 8, Issue 8, p. 202 –203
- DOI: 10.1049/el:19720147
- Type: Article
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p.
202
–203
(2)
A simple and sensitive test for evaluating the numerical accuracy of a spherical-wave expansion is presented. The basic idea is to compare two different expansions of the same electromagnetic field, computed with respect to different coordinate origins. The use of the technique is illustrated by an example based on the experimental pattern of a horn antenna.
Pulse generation in planar Gunn devices with varying nL product
- Author(s): K. Heime and A. Schlachetzki
- Source: Electronics Letters, Volume 8, Issue 8, p. 203 –205
- DOI: 10.1049/el:19720148
- Type: Article
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p.
203
–205
(3)
Measurements of the current reduction in planar Gunn devices by domain nucleation are reported. The devices were made of epitaxially grown GaAs layers. The measurements showed a decrease of the current reduction, relative to the threshold current Ith, with decreasing nL product, beginning at about nL = 1013 cm−2, where n is the electron concentration and L is the length of active channel.
TRAPATT-diode model for circuit design
- Author(s): K.L. Kotzebue and R.D. Regier
- Source: Electronics Letters, Volume 8, Issue 8, p. 205 –206
- DOI: 10.1049/el:19720149
- Type: Article
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p.
205
–206
(2)
A simple model of a diode operating in the TRAPATT mode is proposed which should be useful in the design of TRAPATT circuits. The model consists of only two elements; a nonlinear capacitance shunted by a voltage- and current-controlled switch. Initial simulations using this model have yielded good results without the use of excessive computer time.
Noise and distortion considerations in charge-coupled devices
- Author(s): D.F. Barbe
- Source: Electronics Letters, Volume 8, Issue 8, p. 207 –208
- DOI: 10.1049/el:19720150
- Type: Article
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p.
207
–208
(2)
Noise and distortion considerations for charge-coupled devices used in imaging applications are presented. Distortion occurs because of transfer inefficiency and leakage current. Noise contributions due to thermal noise during the formation of the potential wells, shot noise in the leakage current and interface-state noise are discussed.
Control algorithm with variable structure for incomplete information on state of system
- Author(s): J. Erschler and J.P. Vernhes
- Source: Electronics Letters, Volume 8, Issue 8, p. 208 –210
- DOI: 10.1049/el:19720151
- Type: Article
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p.
208
–210
(3)
The letter deals with the problem of synthetising a control with a variable structure to obtain a sliding mode, when complete information on the state of the system is not available. A control algorithm for a 3rd-order system is proposed involving only the error and its first derivative.
Maximum-likelihood method for identifying linear s.i.s.o. systems
- Author(s): B.R. Shearer
- Source: Electronics Letters, Volume 8, Issue 8, page: 210 –210
- DOI: 10.1049/el:19720152
- Type: Article
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p.
210
(1)
A routine is described which uses the maximum-likelihood method to fit a discrete transfer-function model to a single-input single-output linear dynamic system. The algorithm is identical to the well known Astrom-Bohlin procedure.
Simple equivalent network for the flexural mode of the ridge guide for acoustic surface waves
- Author(s): R.C.M. Li ; H.L. Bertoni ; A.A. Oliner ; S. Markman
- Source: Electronics Letters, Volume 8, Issue 8, p. 211 –212
- DOI: 10.1049/el:19720153
- Type: Article
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p.
211
–212
(2)
A microwave-network approach is used to obtain an approximate but simple dispersion relation for the ‘flexural’ mode of the ridge waveguide. The propagation characteristics calculated from this relation compare well with experimental data over a wide frequency range.
Error rate for p.s.k. and d.p.s.k. in the presence of source noise
- Author(s): I.M. Richmond and R.F. Thumwood
- Source: Electronics Letters, Volume 8, Issue 8, p. 212 –214
- DOI: 10.1049/el:19720154
- Type: Article
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p.
212
–214
(3)
The analysis of error rate in 2-level p.s.k. and d.p.s.k. systems has been extended to include the effects of source phase noise. Curves are presented for channel S/N ratios up to 6 dB and source phase deviations up to 0.6 rad r.m.s.
Rayleigh-wave frequency discriminator
- Author(s): P. Hartemann and O. Menager
- Source: Electronics Letters, Volume 8, Issue 8, p. 214 –215
- DOI: 10.1049/el:19720155
- Type: Article
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p.
214
–215
(2)
A frequency discriminator using two Rayleigh-wave filters and two rectifying networks is described. For each filter, one of the transducers has a finger length varying according to a (sin x/x)2 law, so that the frequency response is almost triangular. The central frequencies of the two filters are different. The direct voltages, obtained after rectifying diodes are connected at the output of each filter, are subtracted. The frequency-discriminator response is almost linear over a 1.4 MHz frequency interval and is zero at 29.75 MHz.
Electronic properties of gallium-arsenide field-effect-transistor structure used as detector for acoustic surface waves
- Author(s): M. Bruun
- Source: Electronics Letters, Volume 8, Issue 8, p. 215 –216
- DOI: 10.1049/el:19720156
- Type: Article
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p.
215
–216
(2)
A GaAs field-effect-transistor structure has been used as a detector for acoustic surface waves in the frequency range 65–200 MHz. The conversion loss is shown to be strongly dependent on the source-gate and source-drain voltages. The minimum value obtained is 26 dB for frequencies between 80 and 150 MHz.
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