Online ISSN
1350-911X
Print ISSN
0013-5194
Electronics Letters
Volume 8, Issue 7, 6 April 1972
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Volume (2019)
Volume 8, Issue 7
6 April 1972
Electric fields at and near the surface of p-n junctions with negative bevel angles
- Author(s): J. Cornu
- Source: Electronics Letters, Volume 8, Issue 7, p. 169 –170
- DOI: 10.1049/el:19720123
- Type: Article
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p.
169
–170
(2)
A new investigation of the field distribution at and near the surface of p-n junctions with negative bevel angles has shown that an absolute field maximum exists 20–40 μm below the surface. This field maximum is reduced with smaller bevel angles, but is stronger for structures with a higher breakdown voltage in the bulk.
Component tolerancing in compact transient-analysis program
- Author(s): G. Abbas and K. Nichols
- Source: Electronics Letters, Volume 8, Issue 7, page: 170 –170
- DOI: 10.1049/el:19720124
- Type: Article
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p.
170
(1)
An algorithm is described for component tolerancing in a compact nonlinear transient-analysis program. Normally, this would be done by altering the component values and rerunning the analysis program. The algorithm avoids the need to rerun the whole program for each set of component values. This results in an appreciable saving of computer time.
Solution-grown epitaxial InP for high-efficiency circuit-controlled microwave oscillators
- Author(s): C.E.C. Wood ; R.J. Tree ; D.H. Paxman
- Source: Electronics Letters, Volume 8, Issue 7, p. 171 –172
- DOI: 10.1049/el:19720125
- Type: Article
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p.
171
–172
(2)
High-purity epitaxial InP has been prepared by solution growth with free-donor concentrations of 2×1015 cm−3 and liquid-nitrogen mobility of 49 000 cm2/Vs. The growth technique is described and the electrical properties of the layers are given. The microwave characteristics of diodes made on this material are described, and these, together with experiments on specially constructed diodes, suggest that a circuit-controlled bulk negative-resistance mode can be set up in this material. Devices have been produced which give up to 16% efficiency when operated in coaxial circuits at X band.
Program package for linear-system order reduction
- Author(s): S.C. Chuang and C.T. Slapak
- Source: Electronics Letters, Volume 8, Issue 7, p. 172 –173
- DOI: 10.1049/el:19720126
- Type: Article
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172
–173
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A computer-program package for linear-system order reduction is presented for systems described by a scalar transfer function. It should be useful for system analysis and design purposes. The program is written in FORTRAN IV for use in a conversational mode on a PDP-9 (8k, 18 bit) computer.
Statistical nature of impurity-atom diffusion and its influence on the characteristics of narrow-base bipolar transistors
- Author(s): D.P. Kennedy and R.R. O'Brien
- Source: Electronics Letters, Volume 8, Issue 7, p. 173 –174
- DOI: 10.1049/el:19720127
- Type: Article
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p.
173
–174
(2)
Statistical fluctuations inherent in any diffusion process could place fundamental limitations on the minimum basewidth obtainable in bipolar-transistor fabrication. Calculations are presented to demonstrate the probability of encountering channels of low impurity-atom density (hence reduced punch-through voltage) in a very-narrow-base transistor.
1 kW microstripline TRAPATT oscillator
- Author(s): W.E. Wilson
- Source: Electronics Letters, Volume 8, Issue 7, p. 174 –176
- DOI: 10.1049/el:19720128
- Type: Article
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p.
174
–176
(3)
A microstripline-oscillator circuit capable of operation with one or several stacked TRAPATT diodes is described. Peak power of 1 kW at 1 GHz has been achieved from four diodes operated in series. Experiments have shown the importance of a short-circuited resonant transmission line and a high pulser output impedance for efficient, stable operation of the TRAPATT diode stack.
Noncompleteness of continuously equivalent networks
- Author(s): B.M.G. Cheetham and K.G. Nichols
- Source: Electronics Letters, Volume 8, Issue 7, p. 176 –177
- DOI: 10.1049/el:19720129
- Type: Article
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p.
176
–177
(2)
The Howitt and Schoeffler theories provide the means of generating equivalent networks by a node-admittance-matrix transformation. It is shown that, although some Howitt transformations cannot be expressed in the Schoeffler form, the set of obtainable networks is, in most cases, the same for both methods.
Calculation method for microstrip discontinuities and T junctions
- Author(s): I. Wolff ; G. Kompa ; R. Mehran
- Source: Electronics Letters, Volume 8, Issue 7, p. 177 –179
- DOI: 10.1049/el:19720130
- Type: Article
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p.
177
–179
(3)
A method for calculating microstrip discontinuities and T junctions is described, and a waveguide model for the microstrip line is defined. With the help of this model and the use of an orthogonal series expansion, a solution of the above problems is found. Numerical results for the scattering matrices of both the discontinuities and the junctions are given.
Dielectric loading of corrugated waveguides
- Author(s): M.J. Al-Hakkak
- Source: Electronics Letters, Volume 8, Issue 7, p. 179 –180
- DOI: 10.1049/el:19720131
- Type: Article
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179
–180
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Corrugated circular waveguides with dielectric loading are considered. For balanced-hybrid conditions, dielectric loading reduces the necessary overall guide volume and broadens the bandwidth.
Temperature profile and thermal-spreading resistance for a semi-infinite type-IIa-diamond heat sink
- Author(s): Robert L. Bernick
- Source: Electronics Letters, Volume 8, Issue 7, p. 180 –181
- DOI: 10.1049/el:19720132
- Type: Article
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p.
180
–181
(2)
The steady-state temperature profile and thermal-spreading resistance for a uniform heat source on a semi-infinite type IIa-diamond heat sink are calculated. The inverse temperature dependence of the diamond thermal conductivity is taken into account.
Amplitude-constrained minimum-variance controller
- Author(s): G.C. Goodwin
- Source: Electronics Letters, Volume 8, Issue 7, p. 181 –182
- DOI: 10.1049/el:19720133
- Type: Article
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p.
181
–182
(2)
Saturation of the input transducer is a frequently occurring difficulty with minimum-variance controllers. This saturation can lead to serious deterioration in the performance. In the letter, a minimum-variance control law is derived for the case when the input amplitude is constrained.
Self-oscillating regulated convertor
- Author(s): F.F. Judd ; J.M. Lieberman ; H. Wilhart
- Source: Electronics Letters, Volume 8, Issue 7, p. 182 –183
- DOI: 10.1049/el:19720134
- Type: Article
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p.
182
–183
(2)
A self-oscillating transformer-coupled d.c.-d.c. convertor is presented in which the voltage-regulation feedback loop serves the additional function of establishing the self-oscillations required for d.c.-a.c. inversion. This self oscillating regulated convertor offers greater circuit economy than conventional regulated convertors, in which inversion and regulation are separate functions.
Optical fibre with nonuniform refractive index
- Author(s): Allan W. Snyder
- Source: Electronics Letters, Volume 8, Issue 7, p. 183 –184
- DOI: 10.1049/el:19720135
- Type: Article
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p.
183
–184
(2)
An optical fibre with a nonuniform refractive index in the direction of mode propagation is analysed using coupled-mode theory, and is compared to an ‘equivalent’ fibre with a nonuniform radius. Power transfer from the HE11 to the HE12 mode in an expanding taper is shown to be much larger than in the ‘equivalent’ nonuniform-refractive-index fibre.
Emitter-current-limited injection in negative-mobility semiconductors in the limit of zero doping
- Author(s): D. Dascalu
- Source: Electronics Letters, Volume 8, Issue 7, p. 185 –186
- DOI: 10.1049/el:19720136
- Type: Article
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p.
185
–186
(2)
A small-signal theory of emitter-current-limited (e.c.l.) injection in negative-mobility materials is given. Semiconductor doping is assumed to be zero and diffusion is neglected. The a.c. conductance of the negative-mobility space is negative and reaches a constant value (which is controllable by modifying the d.c. bias) at frequencies exceeding two or three times the transit-time frequency. In the same frequency range, the injection noise appears considerably attenuated in the external circuit.
Updating method for LU factorisation
- Author(s): Ibrahim N. Hajj
- Source: Electronics Letters, Volume 8, Issue 7, p. 186 –188
- DOI: 10.1049/el:19720137
- Type: Article
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p.
186
–188
(3)
A method is presented which generates the LU factors of a matrix from the LU factors of another matrix, provided that the two matrices are related by a dyad. The number of arithmetic operations needed to obtain the LU factors of the modified matrix is considerably less than that required if the LU factorisation were to be carried out on it.
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