Online ISSN
1350-911X
Print ISSN
0013-5194
Electronics Letters
Volume 8, Issue 26, 28 December 1972
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Volume 8, Issue 26
28 December 1972
1/4 W continuous-wave Q band Gunn oscillator
- Author(s): E.D. Bullimore ; R.R. Bradley ; J.P. McGeehan ; F.A. Myers
- Source: Electronics Letters, Volume 8, Issue 26, p. 629 –630
- DOI: 10.1049/el:19720454
- Type: Article
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p.
629
–630
(2)
C.W. Gunn devices using integral-heatsink techniques have been produced with a power output of more than ¼ W at 31.5 GHz. Conversion efficiencies of up to 4.6% are reported. A tuning range greater than 8 GHz has been obtained.
Active RC realisation of a 3rd-order lowpass Butterworth characteristic
- Author(s): S.C. Dutta Roy and K.K. Malik
- Source: Electronics Letters, Volume 8, Issue 26, p. 630 –631
- DOI: 10.1049/el:19720455
- Type: Article
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p.
630
–631
(2)
Two realisations of the 3rd-order lowpass Butterworth characteristic are discussed, in which all the capacitances, as well as all the resistances, are equal. The sensitivities of these circuits are evaluated and compared with those of the Huelsman realisation, in which only the capacitors are equal. It is shown that, from the sensitivity point of view, the Huelsman circuit is poorer than either of the two circuits discussed here.
Display of microwave pulse response via the real-time Fourier transform of the transfer function
- Author(s): P.I. Somlo
- Source: Electronics Letters, Volume 8, Issue 26, p. 631 –632
- DOI: 10.1049/el:19720456
- Type: Article
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p.
631
–632
(2)
It has been shown that the locating reflectometer evaluates, in real time, the Fourier transform of a signal applied to it. If a swept signal transmitted through a microwave 2-port (i.e. the transfer function) is applied to the instrument, it will display the pulse response. Transient phenomena taking just a few cycles of an X band carrier may be displayed, yet only low-frequency electronic circuitry is needed.
Transition probabilities of digitally filtered equal-length m sequences
- Author(s): A. Gaugg and H. Weinrichter
- Source: Electronics Letters, Volume 8, Issue 26, p. 632 –633
- DOI: 10.1049/el:19720457
- Type: Article
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p.
632
–633
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In order to characterise different equal-length m sequences, transition probabilities of various digitally filtered sequences are calculated. The best simulation of truly random binary sequences is obtained by m sequences generated by those shift registers whose feedback digit is determined by approximately half of all stages.
Simple lossless feed networks for array antennas
- Author(s): D.H. Sinnott and R.F. Harrington
- Source: Electronics Letters, Volume 8, Issue 26, p. 634 –635
- DOI: 10.1049/el:19720458
- Type: Article
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p.
634
–635
(2)
For a given array, describable as an n-port network for feed considerations, it is shown that, with a class of very simple lossless feed networks, it is possible to realise an arbitrarily specified voltage or current excitation at the array ports.
Construction of the fundamental circuit matrix from a given tree set
- Author(s): I. Cahit and R. Cahit
- Source: Electronics Letters, Volume 8, Issue 26, p. 635 –636
- DOI: 10.1049/el:19720459
- Type: Article
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p.
635
–636
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A new method for constructing the fundamental circuit matrix from a given tree set is presented. The geometry of the graph is not assumed a priori in the procedure.
Memory characteristics of p type-germanium/n type-cadmium-sulphide heterojunctions
- Author(s): W. Duncan
- Source: Electronics Letters, Volume 8, Issue 26, p. 636 –637
- DOI: 10.1049/el:19720460
- Type: Article
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p.
636
–637
(2)
The V/I characteristics of p Ge-n CdS heterojunctions exhibit a hysteresis or memory characteristic which is the result of two diode conduction states of resistances 106 and 10Ω. The device switches from the high to the low state in less than 30 ns under reverse bias, and resetting to the high-resistance state occurs in less than 100 ns when a threshold forward bias current is exceeded. In either state, the device retains its state for periods greater than two weeks and appears to have potential application as a fast, nonvolatile memory element.
Surface-resistance measurements of thin conducting films at 10 GHz
- Author(s): R.S. Butlin and M.K. Mcphun
- Source: Electronics Letters, Volume 8, Issue 26, p. 637 –639
- DOI: 10.1049/el:19720461
- Type: Article
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p.
637
–639
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The letter describes a technique for calibration of an H011 cavity for surface-resistance measurements of thin-film and bulk samples at 10 GHz. After calibration and insertion of the sample, it is only necessary to measure the return loss or v.s.w.r. at resonance. The conductivity and surface resistance of the sample may then be read directly from a graph.
Wide-range temperature compensation by addition of two crystal-resonator frequencies: application to quartz and LiTaO3
- Author(s): J. Brunner
- Source: Electronics Letters, Volume 8, Issue 26, p. 639 –640
- DOI: 10.1049/el:19720462
- Type: Article
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p.
639
–640
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A novel approach to the problem of temperature compensation for crystal oscillators is described with applications to medium- and low-frequency resonators.
Measurements of the influence of the nd product on the Gunn effect
- Author(s): Andreas Schlachetzki and Klaus Mause
- Source: Electronics Letters, Volume 8, Issue 26, p. 640 –642
- DOI: 10.1049/el:19720463
- Type: Article
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p.
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–642
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Measurements of the effect of the nd product on domain formation in planar Gunn devices on GaAs are reported. Starting at nd = 1012 cm−2, the Gunn effect decreases to zero at nd = 1011 cm−2.
Simple approach to the design of interface networks for acoustic-surface-wave filters
- Author(s): J. Heighway ; D.W. Tarrant ; C.H. Oxley
- Source: Electronics Letters, Volume 8, Issue 26, p. 642 –643
- DOI: 10.1049/el:19720464
- Type: Article
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p.
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–643
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This letter shows that the transducers of an a.s.w. structure can be visualised as electrical transmission lines and that this approach can lead to design simplification and improved performance. Simple modification of the transducers makes the input impedance purely resistive. Computed and experimental results for quartz and lithium-niobate substrates show that the technique can provide a reduced insertion loss for dispersive structures.
Digital-filter representation of the correction term for high-frequency zeros in the glottal-vocal-tract spectrum
- Author(s): M.A. Nwachuku
- Source: Electronics Letters, Volume 8, Issue 26, p. 643 –644
- DOI: 10.1049/el:19720465
- Type: Article
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p.
643
–644
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The contribution of high-frequency zeros to the glottal-vocal-tract spectrum can be represented in the z plane by a negative-real-axis zero of high multiplicity. Analytically derived results for the location and order of the compensating zero are in agreement with those obtained by a numerical curve-fitting procedure using a digital computer.
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