Online ISSN
1350-911X
Print ISSN
0013-5194
Electronics Letters
Volume 8, Issue 24, 30 November 1972
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Volume 8, Issue 24
30 November 1972
Minimum-power waveform-generation circuit technique
- Author(s): B.L. Hart and R.W.J. Barker
- Source: Electronics Letters, Volume 8, Issue 24, p. 585 –586
- DOI: 10.1049/el:19720424
- Type: Article
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p.
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–586
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A technique by which the power to a waveform-generating circuit is automatically supplied only for the desired duration of the output waveform is illustrated in the design of a precisiontimed ramp-voltage generator having a fast flyback.
Testing switching networks for short-circuit faults
- Author(s): J.F. Kaposi and A.A. Kaposi
- Source: Electronics Letters, Volume 8, Issue 24, p. 586 –587
- DOI: 10.1049/el:19720425
- Type: Article
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p.
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–587
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A significant class of faults in switching networks is due to short circuits between signal terminals. A method is proposed which tests networks for such faults, making use of algorithms developed for detecting or diagnosing stuck-at-level faults.
Fundamental, harmonic and subharmonic locking phenomena in negative-resistance oscillators
- Author(s): Janusz Markowski
- Source: Electronics Letters, Volume 8, Issue 24, p. 587 –588
- DOI: 10.1049/el:19720426
- Type: Article
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p.
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–588
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Using a simple nonlinear negative-resistance model for the active element of an oscillator, small-signal locking characteristics are investigated for fundamental, harmonic and subharmonic locking. For fundamental locking, a large-signal theory has been developed, and its results are compared with those of the well established small-signal theory for both reciprocal and circular injection of the locking signal.
Elmore's definition of risetime
- Author(s): V. Dvořák
- Source: Electronics Letters, Volume 8, Issue 24, p. 588 –589
- DOI: 10.1049/el:19720427
- Type: Article
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p.
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–589
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Elmore's definition of risetime as the square root of the second central moment of the impulse response of a network is well known. An alternative expression for Elmore's risetime has been derived, which indicates that this risetime may be determined completely from the behaviour of the network magnitude function near a zero frequency.
Josephson junctions with 1 μm dimensions and with picosecond switching times
- Author(s): W. Jutzi ; TH.O. Mohr ; M. Gasser ; H.P. Gschwind
- Source: Electronics Letters, Volume 8, Issue 24, p. 589 –591
- DOI: 10.1049/el:19720428
- Type: Article
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Josephson junctions with 1 × 3 μm dimensions have no resonances. For a current density of about 1000 A/cm2, the risetime of the switching transient from zero to the gap voltage is below 38 ps.
Field-effect-transistor-bridge multiplier-divider
- Author(s): M.M. Abu-zeid and H. Groendijk
- Source: Electronics Letters, Volume 8, Issue 24, p. 591 –592
- DOI: 10.1049/el:19720429
- Type: Article
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A description is given of a 4-quadrant temperature-compensated multiplier-divider circuit in the form of a self-balancing f.e.t. bridge consisting of two matched f.e.t. pairs.
Determination of the velocity/field characteristic for n type indium phosphide from dipole-domain measurements
- Author(s): B.A. Prew
- Source: Electronics Letters, Volume 8, Issue 24, p. 592 –594
- DOI: 10.1049/el:19720430
- Type: Article
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Measurements on dipole domains in indium phosphide have shown that the depletion ratio is low and varies with domain voltage for peak fields up to at least 75 kV/cm for material with a 6×1014 cm−3 carrier density. A velocity/field characteristic, determined, using these data, has a much lower valley field than that indicated by previous measurements.
Computation of element patterns of an E plane sectoral-horn planar phased array
- Author(s): D. Parkin
- Source: Electronics Letters, Volume 8, Issue 24, p. 594 –595
- DOI: 10.1049/el:19720431
- Type: Article
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594
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The electromagnetic properties of a planar array of E plane sectoral horns have been analysed. Computed results are presented and compared with measurements. A more exact criterion for the existence of mutual-coupling nulls is also presented, which predicts an H plane null in a particular array which is not predicted by previous criteria.
Effect of contact resistance on Gunn-diode risetimes
- Author(s): D. Edwards ; G. Kellett ; P. Turner ; F. Myers
- Source: Electronics Letters, Volume 8, Issue 24, p. 596 –597
- DOI: 10.1049/el:19720432
- Type: Article
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It is shown that the dominant mechanism limiting the risetime of pulsed Gunn-effect oscillators is a parasitic resistance within the device. If this resistance is reduced by careful control of the contact metallisation, or alternatively by the use of n+ contacts, risetimes of 1 ns or less can be obtained. The cavity parameters are shown to have a 2nd-order effect only.
Time-division implementation of digital-network sensitivities
- Author(s): L. Burroughs ; S. Colonna ; M. Salerno
- Source: Electronics Letters, Volume 8, Issue 24, p. 597 –599
- DOI: 10.1049/el:19720433
- Type: Article
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A method is given for implementing digital-network sensitivities in time division with the network output. Extra processing, which takes place between one input sample and the next, is used. The structure to be implemented is obtained by adding to the original network delays smaller than the sampling interval, and cyclically variable multipliers of integer values.
Mobility parameters and metal-oxidesemiconductor-transistor properties
- Author(s): H. Martinot ; P. Rossel ; G. Vassilieff
- Source: Electronics Letters, Volume 8, Issue 24, p. 599 –600
- DOI: 10.1049/el:19720434
- Type: Article
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A formulation of the effective mobility of the carriers in the channel of m.o.s. transistors, accounting for the effects of the transverse and longitudinal electric field, is presented. The expression of the drain current is consistent with experiment. Correlation relations between mobility parameters have been derived from the variations of these parameters with technology and from their behaviour under stress.
Lithium-niobate-silicon surface-wave convoluter
- Author(s): O.W. Otto and N.J. Moll
- Source: Electronics Letters, Volume 8, Issue 24, p. 600 –602
- DOI: 10.1049/el:19720435
- Type: Article
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–602
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A large figure of merit M has been measured for a lithiumniobate-silicon acoustic-surface-wave convoluter. A theoretical expression for M is presented, which is in good agreement with the measured value.
Correlation-function display and peak detection
- Author(s): J.R. Jordan and M.S. Back
- Source: Electronics Letters, Volume 8, Issue 24, p. 602 –604
- DOI: 10.1049/el:19720436
- Type: Article
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A new method of correlation-function display and peak detection, based on the polarity correlator, is described. It is shown that the overload states of a parallel array of integrating counters, when displayed at regular intervals of elapsed integration time, define the correlation function. The system has been especially designed for use in correlation flowmeters.
Erratum: Pole assignment in linear control systems
- Author(s): R.J. Widodo
- Source: Electronics Letters, Volume 8, Issue 24, page: 604 –604
- DOI: 10.1049/el:19720437
- Type: Article
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Erratum: New definition of multiple-root sensitivity
- Author(s): C.S. Phan and H.K. Kim
- Source: Electronics Letters, Volume 8, Issue 24, page: 604 –604
- DOI: 10.1049/el:19720438
- Type: Article
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