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1350-911X
Print ISSN
0013-5194
Electronics Letters
Volume 41, Issue 23, 10 November 2005
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Volume 41, Issue 23
10 November 2005
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- Author(s): J. Yan ; H. Zheng ; X. Zeng ; T. Tang
- Source: Electronics Letters, Volume 41, Issue 23, p. 1257 –1258
- DOI: 10.1049/el:20052781
- Type: Article
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A novel capacitance scaling technique is proposed to reduce on-chip capacitor area using a dual-path self-biased current-mode filter. The capacitor multiplier is obtained by the relative ratio of charge-pump currents Icp2/(Icp2−Icp1), rather than the scaling ratio Icp2/Icp1. Compared with the original current-mode filter, the demonstrated loop filter of 250 pF capacitance is achieved with only 25 pF (90% die area saving), and the resistor area is reduced by 50% owing to reuse of the degenerated resistor RG. - Author(s): M. Green ; K. Hayatleh ; B.L. Hart ; F.J. Lidgey
- Source: Electronics Letters, Volume 41, Issue 23, p. 1258 –1259
- DOI: 10.1049/el:20053035
- Type: Article
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A novel temperature-independent direct current converter, the subject of a patent application number GB051623.8, is presented. Conversion ratios from less than unity to in excess of 50 are possible. Simulation measurements show an output temperature coefficient as low as 16 ppm/°C over the temperature range −40 to +85°C.
Compact current-mode loop filter for PLL applications
Temperature-independent direct current converter technique
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- Author(s): W. Song ; Y. Hao ; C.G. Parini
- Source: Electronics Letters, Volume 41, Issue 23, p. 1259 –1261
- DOI: 10.1049/el:20052865
- Type: Article
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The alternating direction implicit (ADI) scheme has been successfully applied to the finite-difference time-domain (FDTD) method to achieve an unconditionally stable algorithm. The ADI-FDTD method is extended to the curvilinear co-ordinate system to form an alternating direction implicit nonorthogonal FDTD (ADI-NFDTD) method. The numerical results show that the proposed ADI-NFDTD algorithm demonstrates better late time stability compared to the conventional NFDTD scheme. - Author(s): F. Marie ; L. Bertel ; Y. Erhel ; D. Lemur ; M. Oger
- Source: Electronics Letters, Volume 41, Issue 23, p. 1261 –1262
- DOI: 10.1049/el:20052670
- Type: Article
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Theoretical aspects and experimental results are presented for beam-forming techniques operating on an array of HF collocated antennas without the need for space diversity. This original application achieves the separation of two propagation modes associated with a given path on the ionospheric channel. A specific device, based on different types of active antennas, has been developed and experimental results validate this concept. - Author(s): B.D. Nguyen ; C. Migliaccio ; Ch. Pichot ; N. Yonemoto ; K. Yamamoto
- Source: Electronics Letters, Volume 41, Issue 23, p. 1262 –1263
- DOI: 10.1049/el:20052970
- Type: Article
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A double slot array antenna pasted on the aperture of a standard WR-10 waveguide is presented. Its compactness and airtightness make it suitable for serving as a primary source for reflector antennas. Compared to a standard WR-10 open-ended waveguide, it acts as a small FSS to provide up to 12 dB return loss enhancement within 9% bandwidth centred on 94 GHz, whereas radiation pattern and gain are similar. Good agreement is found between measured and predicted characteristics between 90 and 100 GHz. A return loss improvement is of particular interest while considering an antenna system with short focal length. - Author(s): F. Bichelot ; R. Loison ; R. Gillard
- Source: Electronics Letters, Volume 41, Issue 23, p. 1264 –1266
- DOI: 10.1049/el:20053348
- Type: Article
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A new rectangular dielectric resonator antenna is presented. The dielectric resonator is caught between two metallic plates. As a result, the structure works in a quasi-TEM mode. The proposed antenna exhibits a 22% impedance bandwidth and good radiating characteristics. - Author(s): M.A. Gingrich and D.H. Werner
- Source: Electronics Letters, Volume 41, Issue 23, p. 1266 –1267
- DOI: 10.1049/el:20053004
- Type: Article
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Presented is a new means of synthesising thin, planar low or zero index metamaterials (LIM/ZIM) via frequency selective surfaces (FSS), the parameters of which are optimised using a genetic algorithm. FSS-based LIM/ZIM possess advantages such as light weight, ease of fabrication, low loss, and are readily scalable in frequency.
ADI-FDTD algorithm in curvilinear co-ordinates
Beam-forming techniques operating on HF collocated antennas
Compact primary source for W-band reflector antenna
Quasi-TEM rectangular dielectric resonator antenna
Synthesis of low/zero index of refraction metamaterials from frequency selective surfaces using genetic algorithms
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- Author(s): R. Sobot ; S. Stapleton ; M. Syrzycki
- Source: Electronics Letters, Volume 41, Issue 23, p. 1267 –1268
- DOI: 10.1049/el:20052866
- Type: Article
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A new architecture for IF to RF conversion is presented. The architecture is based on a tunable continuous-time bandpass ΣΔ modulator with fractional delay in combination with a Manchester coder and decoder. The suitability of the proposed architecture is discussed in the context of a software-defined radio. Mixed-signal behavioural simulations confirm the validity of the concept. - Author(s): F. Cannillo and C. Toumazou
- Source: Electronics Letters, Volume 41, Issue 23, p. 1268 –1269
- DOI: 10.1049/el:20053082
- Type: Article
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The feasibility of robust MOS current-mode logic (MCML) digital circuits operated in subthreshold regime is investigated. The design of a subthreshold MCML inverter gate in a 90 nm CMOS technology is presented together with the evaluation of its DC performance.
Fractional delay sigma-delta upconverter
Nano-power subthreshold current-mode logic in sub-100 nm technologies
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- Author(s): S. Takahashi ; J.Z. Hao ; Y.W.A. Lee ; Z. Cai ; T.T. Do ; B.Y.R. Ng
- Source: Electronics Letters, Volume 41, Issue 23, p. 1270 –1271
- DOI: 10.1049/el:20052925
- Type: Article
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A report is presented on the effect of bending on the sidelobe power of the reflection spectrum in fibre Bragg grating (FBG) lateral force sensors. Under four-point bending, force detection improves drastically up to 250 N.
Effect of bending methods on FBG lateral force sensor
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- Author(s): D. Charalampidis
- Source: Electronics Letters, Volume 41, Issue 23, p. 1272 –1273
- DOI: 10.1049/el:20052596
- Type: Article
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A robust watermarking method based on vector quantisation (VQ) is proposed as an improvement to existing VQ watermarking techniques. Experimental results illustrate that the proposed method exhibits superior performance compared to existing techniques for a variety of attacks.
Improved robust VQ-based watermarking
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- Author(s): K. Kishine and H. Onodera
- Source: Electronics Letters, Volume 41, Issue 23, p. 1273 –1275
- DOI: 10.1049/el:20052776
- Type: Article
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A method to estimate the acquisition time for the clock and data recovery (CDR) IC using the linear phase-locked loop (PLL) technique is proposed. Estimations using the method follow the measured acquisition time for the PLL with any loop parameters, which makes it possible to design the CDR IC for various targets. - Author(s): I. Soga ; S. Hayashi ; Y. Ohno ; S. Kishimoto ; K. Maezawa ; T. Mizutani
- Source: Electronics Letters, Volume 41, Issue 23, p. 1275 –1276
- DOI: 10.1049/el:20052840
- Type: Article
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Direct integration of AlGaAs/GaAs HEMTs on AlN ceramic substrates has been demonstrated based on the fluidic self-assembly (FSA) technology. The FSA is a unique technology to arrange small device blocks (around a few tens of microns) onto the other substrates. With this technology the core part of the HEMT having no pad can be mounted on the ceramic substrate. The HEMT core can then be connected electrically with the circuit on a ceramic substrate using a planar wiring process. This eliminates large stray capacitance and inductance in the conventional technology. It has been demonstrated that the good FET characteristics are obtained even after FSA process. - Author(s): Y.-H. Zhang ; G.-F. Ding ; X.-H. Dai ; B.-C. Cai
- Source: Electronics Letters, Volume 41, Issue 23, p. 1276 –1278
- DOI: 10.1049/el:20052703
- Type: Article
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A fast switching electromagnetic microactuator with two stable positions is presented. The actuator of size 2.0×2.2 mm is fabricated using UV-LIGA technology. Test results show that a current pulse with an amplitude of 50 mA is needed for the actuator's switching between two stable states, and the switching time is approximately 20 µs. The displacement of the actuator is about 17 µm. - Author(s): C. Jenkins ; W. Johnstone ; D. Uttamchandani ; V. Handerek ; S. Radcliffe
- Source: Electronics Letters, Volume 41, Issue 23, p. 1278 –1279
- DOI: 10.1049/el:20052449
- Type: Article
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An optical MEMS retroreflective phase modulator comprising a silicon MEMS microactuated platform to which a spherical retroreflector is attached has been investigated. The steady state and dynamic behaviour of the MEMS modulator have been experimentally measured when two different sizes of spherical retroreflectors are used. Dynamic testing shows a dominant resonant frequency response at around 200 Hz, which matches finite-element analysis for the structure. - Author(s): T.-H. Lin and Y.-J. Lai
- Source: Electronics Letters, Volume 41, Issue 23, p. 1279 –1281
- DOI: 10.1049/el:20052451
- Type: Article
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High-performance phase-locked loops (PLLs) often require voltage-controlled oscillators (VCOs) employing both discrete and continuous tuning mechanisms to satisfy a wide frequency range and a low VCO tuning gain simultaneously. An auxiliary circuit is required to facilitate the selection among a group of discrete bands. An agile technique to search for an optimum VCO frequency band is proposed. The search is based on measuring the period difference between a reference and the VCO-divided signals. The VCO band selection circuit is implemented with a 10 GHz PLL in a 0.18 µm CMOS process and consumes only an extra 3 mA. The band selection time is less than 4 µs. - Author(s): A. Vasylyev ; P. Weger ; W. Simbürger
- Source: Electronics Letters, Volume 41, Issue 23, p. 1281 –1282
- DOI: 10.1049/el:20053261
- Type: Article
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A fully monolithically-integrated power amplifier with a bandwidth (−3 dB) from 20.5 to 31 GHz was realised in a 0.13 µm standard CMOS technology. A maximum power added efficiency of 13% with a corresponding output power of 13 dBm was achieved at 25.7 GHz with 1.5 V supply voltage.
Acquisition-time estimation for over 10 Gbit/s clock and data recovery ICs
Direct integration of GaAs HEMTs on AlN ceramic substrates using fluidic self-assembly
Fast switching bistable electromagnetic microactuator
MEMS actuated spherical retroreflector for free-space optical communications
Time-based frequency band selection method for phase-locked loops
Ultra-broadband 20.5–31 GHz monolithically-integrated CMOS power amplifier
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- Author(s): Z. Mi ; S. Fathpour ; P. Bhattacharya
- Source: Electronics Letters, Volume 41, Issue 23, p. 1282 –1283
- DOI: 10.1049/el:20053374
- Type: Article
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Single-pass optical gain of self-assembled InGaAs/GaAs p-doped tunnel injection quantum dot laser heterostructures emitting at 1.1 µm is measured by the multisection device technique. The heterostructures, consisting of three layers of quantum dots in the active region, demonstrate net modal gain as high as 57 cm−1.
Measurement of modal gain in 1.1 µm p-doped tunnel injection InGaAs/GaAs quantum dot laser heterostructures
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- Author(s): J. Lees ; J. Benedikt ; K.P. Hilton ; J. Powell ; R.S. Balmer ; M.J. Uren ; T. Martin ; P.J. Tasker
- Source: Electronics Letters, Volume 41, Issue 23, p. 1284 –1285
- DOI: 10.1049/el:20053155
- Type: Article
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The combination of gallium nitride (GaN) device technology with the now well established efficiency enhancing Doherty power amplifier (PA) architecture is presented for the first time. The experimental structure exhibits a power density of approximately 1 W/mm and linearity that remains comparable to that observed in other GaAs structures, demonstrating that GaN can be highly effective when used within this type of PA architecture. - Author(s): B. Vidal ; M.A. Piqueras ; J. Martí
- Source: Electronics Letters, Volume 41, Issue 23, p. 1286 –1287
- DOI: 10.1049/el:20053188
- Type: Article
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A cost-effective technique based on the spectrum slicing of broadband optical sources using optical filters and attenuators to control the amplitude of optical samples of a photonic transversal microwave filter is proposed and experimentally demonstrated. The technique allows the apodisation of the filter transfer function using a few components instead of previous architectures using as many attenuators or individual lasers as filter coefficients which are not feasible for practical filters with many taps. - Author(s): S. Pranonsatit and S. Lucyszyn
- Source: Electronics Letters, Volume 41, Issue 23, p. 1287 –1288
- DOI: 10.1049/el:20053167
- Type: Article
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The fabrication and measured performance of a self-assembled microwave inductor, created using a novel screen-printing technology, is reported for the first time. Real surface micromachining is performed using screen printing, by introducing a unique sacrificial layer. The self-assembled inductor demonstrated a significantly increased unloaded Q-factor and first self-resonant frequency.
Experimental gallium nitride microwave Doherty amplifier
Photonic microwave filter based on spectrum slicing with reconfiguration capability
Self-assembled screen-printed microwave inductors
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- Author(s): M. Uysal
- Source: Electronics Letters, Volume 41, Issue 23, p. 1289 –1290
- DOI: 10.1049/el:20053050
- Type: Article
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In this Letter, we investigate the error rate performance of coherent M-ary phase shift keying (M-PSK) modulation over cascaded Rayleigh fading with receive antenna diversity. Through the derived symbol error rate (SER) expression, we present the maximum diversity order achievable over such channels and demonstrate the performance degredation in comparison to conventional Rayleigh channels. - Author(s): A.P. Chambers and I.E. Otung
- Source: Electronics Letters, Volume 41, Issue 23, p. 1290 –1292
- DOI: 10.1049/el:20052711
- Type: Article
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An adaptive linear neuron (ADALINE) approach to short-term prediction with application to fade mitigation control for satellite networks is presented and compared with four other short-term prediction methods. The neural network approach was found to be able to predict the underlying attenuation process the most accurately of the five methods, with few exceptions. - Author(s): Y. Ohta and T. Fujii
- Source: Electronics Letters, Volume 41, Issue 23, p. 1292 –1293
- DOI: 10.1049/el:20052886
- Type: Article
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A formula to predict the available path number in wideband mobile propagation is proposed. It is based on the authors' previously proposed empirical path delay profile model. The predicted values are in good agreement with measured data, demonstrating that the proposed formula is valid.
Maximum achievable diversity order for cascaded Rayleigh fading channels
Neural network approach to short-term fade prediction on satellite links
Prediction of available path number in wideband mobile propagation
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- Author(s): R.A. Cryan and M. Menon
- Source: Electronics Letters, Volume 41, Issue 23, p. 1293 –1294
- DOI: 10.1049/el:20053277
- Type: Article
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nk pulse position modulation (PPM) is a new modulation format that has recently been proposed for the optical wireless channel. For the first time, a full spectral characterisation of nk-PPM is considered and original expressions are presented, which are validated numerically, for predicting both the continuous and discrete spectrum.
Spectral characterisation of nk pulse position modulation format
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- Author(s): G. Meloni ; G. Berrettini ; M. Scaffardi ; A. Bogoni ; L. Potì ; M. Guglielmucci
- Source: Electronics Letters, Volume 41, Issue 23, p. 1294 –1295
- DOI: 10.1049/el:20052759
- Type: Article
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250-times repetition frequency multiplication of a 10 GHz pulse train achieving a 2.5 THz pulse train is numerically and experimentally demonstrated. Spectrum broadening, by nonlinear pulse chirping, and Talbot effect in 260 m-long and 500 m-long highly nonlinear fibre, respectively, are exploited to obtain a 2.5 THz clock signal. - Author(s): P. Tang ; A.L. Meier ; D.J. Towner ; B.W. Wessels
- Source: Electronics Letters, Volume 41, Issue 23, p. 1296 –1297
- DOI: 10.1049/el:20053260
- Type: Article
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The first successful realisation of high-speed travelling-wave BaTiO3 thin-film electro-optic waveguide modulators with 3 dB modulation bandwidth of 15 GHz at 1.55 µm wavelength is reported. Quasi-velocity-matched electrodes for BaTiO3 thin-film modulators are achieved by addition of a SiO2 buffer layer. Its microwave and electro-optic response are characterised. - Author(s): H. Tazawa and W.H. Steier
- Source: Electronics Letters, Volume 41, Issue 23, p. 1297 –1298
- DOI: 10.1049/el:20052765
- Type: Article
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The linearity of a ring resonator-based electro-optic polymer modulator is experimentally studied. The modulator shows a suppression of third-order distortion near a half transmission bias point. From the experimental transfer function and typical link parameters, the intermodulation-free dynamic range is predicted to be 123 dBHz4/5. - Author(s): H. Uenohara and R. Kurosawa
- Source: Electronics Letters, Volume 41, Issue 23, p. 1299 –1300
- DOI: 10.1049/el:20053176
- Type: Article
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A semiconductor-integrated optical digital-to-analogue converter, consisting of input and output multimode interference couplers, and one-bit delay line, has been realised for the first time. Small bending curvature owing to the large refractive index difference results in the small size with the delay line of about 1 cm length for 10 Gbit/s optical labels. One-bit delay time of 100 ps for 10 Gbit/s labels, and four-level analogue output signals for two-bit optical labels have been generated.
250-times repetition frequency multiplication for 2.5 THz clock signal generation
High-speed travelling-wave BaTiO3 thin-film electro-optic modulators
Linearity of ring resonator-based electro-optic polymer modulator
Semiconductor optical digital-to-analogue converter
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- Author(s): C. Seidl ; R. Swoboda ; H. Zimmermann
- Source: Electronics Letters, Volume 41, Issue 23, p. 1301 –1302
- DOI: 10.1049/el:20053310
- Type: Article
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The reduction of the wavelength from 785 nm (CD) to 410 nm (Blu-ray) in optical storage systems leads to the requirement of optical receivers with high bandwidth and high sensitivity. The circuit presented achieves a bandwidth of 615 MHz with a transimpedance of 200 kΩ due to the usage of capacitive coupled distributed resistors in the feedback path.
Optical receiver IC with capacitive coupled distributed resistors resulting in effectively reduced parasitic capacitance
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- Author(s): S. Gennaro ; B.J. Sealy ; R.M. Gwilliam
- Source: Electronics Letters, Volume 41, Issue 23, p. 1302 –1304
- DOI: 10.1049/el:20053455
- Type: Article
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A novel aspect of the carbon effect on indium electrical activation in silicon is presented. It is shown that, depending on the thermal budget used during annealing, the presence of carbon can increase or inhibit the indium electrical activation. The different behaviour is explained in terms of the Ins–Cs couple formation for low thermal budgets and carbon precipitation for high thermal budgets. - Author(s): V.D.S. Dhaka ; N.V. Tkachenko ; H. Lemmetyinen ; E.-M. Pavelescu ; J. Konttinen ; M. Pessa ; K. Arstila ; J. Keinonen
- Source: Electronics Letters, Volume 41, Issue 23, p. 1304 –1305
- DOI: 10.1049/el:20053117
- Type: Article
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The long-term stability of defects with the ageing of heavy-ion-irradiated and post-irradiated-annealed InGaAs/GaAs compound semiconductor quantum wells is reported using the time-resolved upconversion technique of luminescence lifetimes. The defects created by Ni+-heavy-ion irradiation are found to be thermally unstable. The ageing tests prove that a substantial amount of defects are removed by self-annealing in about a month of time even at room temperature through a slow diffusion process, resulting in a dynamically stable sample but with a twofold increment in lifetimes. If the sample is annealed upon Ni+ irradiation, the defects are removed immediately, yielding stable and much longer relaxation times independent of the ageing process. These results may be useful in designing devices with an active region as ion-irradiated semiconductor quantum wells.
Dual carbon effect on electrical properties of high dose indium implants in silicon
Room-temperature self-annealing of heavy-ion-irradiated InGaAs/GaAs quantum wells
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- Author(s): S. Singh and S. Srinivasan
- Source: Electronics Letters, Volume 41, Issue 23, p. 1305 –1306
- DOI: 10.1049/el:20052994
- Type: Article
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Several fast Fourier transform (FFT) pruning algorithms have been proposed for applications where the entire spectrum of frequencies is not of relevance and even the inputs are sparse. However, these are architecturally inefficient because of the complexity of the overhead operations involved. Developed is a new generic pruning algorithm that uses only single bit combinational operations for delineating paths in the signal flow graph, as against butterflies, which are relevant for computation of the desired frequency coefficients. The entire delineation process has been divided into stages making the proposed algorithm also amenable for pipelined hardware implementation.
Architecturally efficient FFT pruning algorithm
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