Online ISSN
1350-911X
Print ISSN
0013-5194
Electronics Letters
Volume 33, Issue 13, 19 June 1997
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Volume 33, Issue 13
19 June 1997
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- Author(s): G.A. Covic and G.L. Peters
- Source: Electronics Letters, Volume 33, Issue 13, p. 1101 –1102
- DOI: 10.1049/el:19970797
- Type: Article
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Non-ideal DC link conditions degrade the quality of output waveforms from voltage-sourced inverters. Four-switch inverters that make use of the split DC link produced from a voltage-doubling rectifier are particularly sensitive to link imbalance. An effective technique using space vector methods is described which modulates the ripple effects, extending the useful operating range of low cost, single to three phase converters. - Author(s): D.Y. Jeong ; S.H. Chae ; W.C. Song ; G.H. Cho
- Source: Electronics Letters, Volume 33, Issue 13, p. 1102 –1103
- DOI: 10.1049/el:19970798
- Type: Article
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A differential voltage clamped current mode delay cell is proposed and a three-stage differential ring oscillator is implemented. Owing to the nature of this current mode, with voltage clamping and robustness against noise, experimental results show that the supply sensitivity is very low at ~0.1 – 0.2%/V in the 500 – 800 MHz range, with its tuning range over 1 decade up to 1.38 GHz. - Author(s): K. Kim ; H.-W. Cha ; W.-S. Chung
- Source: Electronics Letters, Volume 33, Issue 13, p. 1103 –1105
- DOI: 10.1049/el:19970786
- Type: Article
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A current-controllable Schmitt trigger using operational transconductance amplifiers (OTAs) is presented. It consists of two OTAs and two grounded resistors. The output level of the circuit is determined by one OTA and one resistor, and the threshold level is determined by the other OTA and resistor. The theory of operation is presented and experimental results are used to verify theoretical predictions. - Author(s): A. Tamaševičius
- Source: Electronics Letters, Volume 33, Issue 13, p. 1105 –1106
- DOI: 10.1049/el:19970753
- Type: Article
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A highly reproducible analogue oscillator has been designed for chaotic synchronisation and secure communication. The oscillator contains a negative impedance converter, an LC resonance loop, an RC phase shift circuit, and a comparator chip used as a nonlinear device.
DC link imbalance compensation in four-switch inverter AC motor drives
High speed differential voltage clamped current mode ring oscillator
OTA-R Schmitt trigger with independently controllable threshold and output voltage levels
Reproducible analogue circuit for chaotic synchronisation
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- Author(s): H. Furukawa ; Y. Kamio ; H. Sasaoka
- Source: Electronics Letters, Volume 33, Issue 13, p. 1106 –1108
- DOI: 10.1049/el:19970749
- Type: Article
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A co-channel interference canceller that uses a CMA adaptive array antenna is presented. In this canceller, when a CMA adaptive array antenna captures a co-channel interference signal, a replica of this signal is generated and then eliminated from a received signal, thus a desired signal can be obtained. Computer simulation results show that the proposed canceller can effectively reduce co-channel interference. - Author(s): Chih-YuHuang and Yuan-TungChang
- Source: Electronics Letters, Volume 33, Issue 13, p. 1108 –1109
- DOI: 10.1049/el:19970771
- Type: Article
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The mutual coupling between two cylindrical-rectangular microstrip antennas is studied from the application of the generalised transmission line model (GTLM). Theoretical solutions and measured results of both E-plane and H-plane coupling coefficients are presented. The curvature effects on the mutual coupling are discussed. - Author(s): J. Fuhl
- Source: Electronics Letters, Volume 33, Issue 13, p. 1109 –1111
- DOI: 10.1049/el:19970757
- Type: Article
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A novel algorithm for adjusting the array coefficients of a space-time array is introduced, which works in parallel and gives higher output signal-to-noise ratios than conventional approaches. It requires only the inversion of one correlation matrix with a size equal to the number of antenna elements M, independent of the number of temporal stages R. Its computational complexity is therefore O{M3} instead of the O{(MR)3} for the conventional approach. - Author(s): S. Dauguet ; R. Gillard ; J. Citerne ; G. Piton
- Source: Electronics Letters, Volume 33, Issue 13, p. 1111 –1112
- DOI: 10.1049/el:19970770
- Type: Article
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A global electromagnetic analysis of microstrip agile antennas is presented. The analysis developed is based on the integral equation technique associated with a numerical treatment of lumped elements, which enables the actual size of the varactor diodes to be taken into account. The agreement between theoretical and experimental results clearly shows the capabilities of this approach to predict the agility phenomenon. - Author(s): Chia-Luan Tang ; Hong-Twu Chen ; Kin-Lu Wong
- Source: Electronics Letters, Volume 33, Issue 13, p. 1112 –1113
- DOI: 10.1049/el:19970772
- Type: Article
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By using a single shorting pin and a single probe feed, the dual-frequency operation of the circular microstrip antenna is demonstrated. This dual-frequency design can result in a much reduced antenna size and provide a tunable frequency ratio of ~2.55 – 3.83 for the two operating frequencies. Typical experimental results are presented.
Co-channel interference canceller using CMA adaptive array antenna
Curvature effects on the mutual coupling of cylindrical-rectangular microstrip antennas
Efficient computation of the weights of a wideband antenna structure
Global electromagnetic analysis of microstrip agile antenna
Small circular microstrip antenna with dual-frequency operation
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- Author(s): Tai-KuoWoo
- Source: Electronics Letters, Volume 33, Issue 13, p. 1113 –1114
- DOI: 10.1049/el:19970735
- Type: Article
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A finite projective plane based time hopping scheme is presented for direct sequence CDMA with non-ideal power control in a Rayleigh fading environment. The advantages are two fold. First, the number of error bits is reduced significantly; secondly, the throughput is increased. - Author(s): B. Xu and T.B. Vu
- Source: Electronics Letters, Volume 33, Issue 13, p. 1114 –1116
- DOI: 10.1049/el:19970781
- Type: Article
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An effective interference cancellation scheme based on a new multipath model is introduced. A CM (constant modulus) equalisation approach based on an adaptive array with a spatial prefilter is derived. It has been proven by numerical simulation that this method achieves a better performance, even under serious multipath conditions. - Author(s): B.C. Jones and D.J. Skellern
- Source: Electronics Letters, Volume 33, Issue 13, p. 1116 –1117
- DOI: 10.1049/el:19970767
- Type: Article
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HIPERLAN (high performance radio local are network) (type 1) is an ETSI high speed wireless LAN standard. The simulation results presented suggest that the best RSSI-based HIPERLAN channel assignment strategy is to always choose the channel with the lowest amount of measured interference, rather than the first channel measured below the clear channel assessment (CCA) threshold. - Author(s): J.A. Cherry ; W.M. Snelgrove ; P. Schvan
- Source: Electronics Letters, Volume 33, Issue 13, p. 1118 –1119
- DOI: 10.1049/el:19970779
- Type: Article
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A previously unpublished mechanism of signal-to-noise ratio (SNR) loss specific to continuous-time ΣΔ modulators is illustrated. It arises from increased quantiser resolution time for small-amplitude quantiser inputs, and is related to metastability. - Author(s): F. Dominique and J.H. Reed
- Source: Electronics Letters, Volume 33, Issue 13, p. 1119 –1120
- DOI: 10.1049/el:19970778
- Type: Article
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It is known that a tapped delay line FIR filter adapted by the constrained Hebbian rule can blindly estimate the code sequence of a direct sequence (DS) signal, provided that the estimation is symbol synchronous. A modification is proposed to the existing Hebb based blind sequence estimator to reduce the number of computations required; simulation results are presented. - Author(s): M.E. Høvin ; T.S. Lande ; D.T. Wisland ; S. Kiaei
- Source: Electronics Letters, Volume 33, Issue 13, p. 1121 –1122
- DOI: 10.1049/el:19970732
- Type: Article
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It is shown that for delta-sigma (ΔΣ) frequency-to-digital conversion (FDC) there is no need for a ΔΣ modulator, since a limited FM signal itself may be considered as an asynchronous ΔΣ bit-stream. By feeding the limited FM signal directly to a sinc2 ΔΣ decimator, a triangularly weighted zero-crossing counter FDC is introduced, providing ΔΣ noise shaping. The results measured confirm the theory. - Author(s): G.S. Li ; W. Yuen ; C.J. Chang-Hasnain
- Source: Electronics Letters, Volume 33, Issue 13, p. 1122 –1124
- DOI: 10.1049/el:19970754
- Type: Article
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A wide and continuously tunable detector with a tuning range of 30 nm (Δλ/λ = 3.7%) is demonstrated. Uniform responsivity of ~0.13 A/W and a linewidth of ~5 nm is achieved over the tuning range. This device is well suited for both single and multimode, dense and sparse channel separation WDM applications.
Bit error rate reduction scheme for direct sequence CDMA in a Rayleigh fading environment
Effective interference cancellation scheme based on smart antennas
HIPERLAN channel assignment strategies
Signal-dependent timing jitter in continuous-time ΣΔ modulators
Subspace based PN code sequence estimation for direct sequence signals using a simplified Hebb rule
Triangularly weighted zero-crossing detector providing ΔΣ frequency-to-digital conversion
Wide and continuously tunable (30 nm) detector with uniform characteristics over tuning range
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- Author(s): W.P. Marnane ; S.J. Bellis ; P. Larsson-Edefors
- Source: Electronics Letters, Volume 33, Issue 13, p. 1124 –1125
- DOI: 10.1049/el:19970758
- Type: Article
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A bit-serial/word-parallel divider circuit with simplified control requirements, is presented. The circuit uses the non-restoring division algorithm which places a restriction on the speed of the circuit. By introducing the concept of bit interleaving, a high speed design can be implemented of the same circuit complexity as an equivalent size multiplier.
Bit-serial interleaved high speed division
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- Author(s): J.S. Kim and N. Kim
- Source: Electronics Letters, Volume 33, Issue 13, p. 1125 –1127
- DOI: 10.1049/el:19970751
- Type: Article
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The configuration of multilayers of image planes is described, indicating that a considerable reduction in the radiated emissions from a PCB can be obtained. To effectively calculate the current distribution on the planes by the method of moments, a new method for dividing integral intervals is proposed. - Author(s): H. Deng and H. Ling
- Source: Electronics Letters, Volume 33, Issue 13, p. 1127 –1128
- DOI: 10.1049/el:19970782
- Type: Article
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The adaptive wavelet packet transform is applied to sparsify moment matrices for the fast solution of electromagnetic integral equations. An additive cost function is employed to adaptively select the optimal wavelet expansion/testing functions. It is found that the sparsified matrix has above-threshold elements that grow as O(N1.4) for typical scatterers.
Analysis of EMI reduction by multilayers of image planes
Moment matrix sparsification using adaptive wavelet packet transform
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- Author(s): J.M. Jacob and G.M. Carter
- Source: Electronics Letters, Volume 33, Issue 13, p. 1128 –1130
- DOI: 10.1049/el:19970792
- Type: Article
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Error-free propagation over 24500 km at 10 Gbit/s using dispersion-managed solitons is demonstrated without the use of sliding-frequency guiding filter techniques. The dispersion map has a 107 km period which includes one stationary optical bandpass filter. - Author(s): J. Mahattanakul and C. Toumazou
- Source: Electronics Letters, Volume 33, Issue 13, p. 1130 –1131
- DOI: 10.1049/el:19970741
- Type: Article
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A new modular approach for realising log-domain filters is proposed. By using this approach, nonlinear Gm-C filter structures can be readily transformed into log-domain filters with linear transfer characteristics. The realisation of the log-domain integrator and biquad filters is demonstrated and the simulation results presented. - Author(s): Chien-Cheng Tseng and Soo-Chang Pei
- Source: Electronics Letters, Volume 33, Issue 13, p. 1131 –1133
- DOI: 10.1049/el:19970766
- Type: Article
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A technique for designing a sparse FIR notch filter is presented. First, a sparse property of the ideal notch filter, whose notch frequency has the form (q/2p)π is derived, where p and q are co-prime integers. Then, the Lagrange multiplier method is used to obtain the coefficients of the sparse notch filter which is optimal in the least-squares sense. Next, a design example is presented to demonstrate the effectiveness of this approach. Finally, a sparse notch filter is applied to eliminate the 60 Hz powerline interference superimposed on the electrocardiogram signals.
Error-free transmission of dispersion-managed solitons at 10 Gbit/s over 24500 km without sliding-frequency filters
Modular log-domain filters
Sparse FIR notch filter design and its application
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- Author(s): Yung-MingChou and Hsueh-MingHang
- Source: Electronics Letters, Volume 33, Issue 13, p. 1133 –1134
- DOI: 10.1049/el:19970774
- Type: Article
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Updating mesh nodal points is one of the major tasks in deformable mesh video coding. Owing to object movement and inexact motion estimation, nodal point tracking often results in overlapped patches. A noniterative nodal point processing algorithm is proposed to solve this problem. Simulation results indicate that with this overlapped patch elimination algorithm, the updated mesh can maintain a rather uniform distribution and the moving object can be traced quite well.
Overlapped patch elimination algorithm for deformable mesh video coding
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- Author(s): G. Giustolisi ; G. Palmisano ; G. Palumbo
- Source: Electronics Letters, Volume 33, Issue 13, p. 1134 –1136
- DOI: 10.1049/el:19970742
- Type: Article
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A CMOS voltage squarer for low voltage applications is proposed. The circuit works with a 1.5 V power supply and provides a THD of <3% with input signals up to 260 mVpp. A 0.3% lower THD is achieved with input signals up to 120 mVpp. - Author(s): R. Schmid ; T.F. Meister ; M. Neuhäuser ; A. Felder ; W. Bogner ; M. Rest ; J. Rupeter ; H.-M. Rein
- Source: Electronics Letters, Volume 33, Issue 13, p. 1136 –1137
- DOI: 10.1049/el:19970791
- Type: Article
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A transimpedance preamplifier and a modulator driver used in a 20 Gbit/s fibre-optic TDM transmission system are presented. The ICs were fabricated in an advanced SiGe bipolar technology. The amplifier is noted for its high gain (58 dBΩ) and low equivalent input noise current density (≃ 12 pA/√Hz) and the driver for its high output voltage swing (2.3 V single-ended, 4.6 V differential). - Author(s): H. Träff and J. Wikner
- Source: Electronics Letters, Volume 33, Issue 13, p. 1137 –1139
- DOI: 10.1049/el:19970746
- Type: Article
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A snapshot sampling technique is presented, which uses an optimised inverter chain for sample control and a simple sample-and-hold-circuit for highest speed and low current consumption. Simulations indicate a data acquisition time of 0.34 ns for a simple 0.8 µm digital CMOS process. - Author(s): Wen LuhYang ; Chiou-JyiLin ; Tien ShengChao ; Don-GeyLiu ; Tan FuLei
- Source: Electronics Letters, Volume 33, Issue 13, p. 1139 –1140
- DOI: 10.1049/el:19970706
- Type: Article
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A method is introduced for suppressing the penetration of boron for BF2+-implanted pMOS devices with a stacked amorphous/poly-Si (SAP) gate structure. It is shown that after inductive-coupling-nitrogen-plasma (ICNP) treatment, boron diffusion through the thin gate oxide is largely suppressed. As shown from the charge-to-breakdown measurements, the ICNP process will improve the quality of pMOS devices, with Qbd three times higher than for the control samples.
1.5 V power supply CMOS voltage squarer
20 Gbit/s transimpedance preamplifier and modulator driver in SiGe bipolar technology
Snapshot sampling for ultra-high speed data acquisition
Suppression of boron penetration by using inductive-coupling-nitrogen-plasma in stacked amorphous/polysilicon gate structure
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- Author(s): Z.J. Sun ; K.A. McGreer ; J.N. Broughton
- Source: Electronics Letters, Volume 33, Issue 13, p. 1140 –1142
- DOI: 10.1049/el:19970795
- Type: Article
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A 60-channel WDM demultiplexer based on a concave grating with 0.144 nm channel spacing in the 1.5 µm wavelength region was fabricated. The demultiplexer comprises SiO2/SiON/SiO2 waveguides on Si and an individual channel has a full width at half maximum spectral width of 0.09 nm.
Integrated concave grating WDM demultiplexer with 0.144 nm channel spacing
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- Author(s): T.F. Krauss ; G. Hondromitros ; B. Vögele ; R.M. De La Rue
- Source: Electronics Letters, Volume 33, Issue 13, p. 1142 –1143
- DOI: 10.1049/el:19970777
- Type: Article
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Wavelength-tuned semiconductor lasers have been realised in a GaAs/AlGaAs structure in which the active layer contains three different sizes of quantum well. Extended cavity operation with an external grating has enabled a useful tuning range of 88 nm (778 – 866 nm) to be demonstrated while the threshold current varied by no more than 20 mA about a nominal value of 100 mA across the tuning range. Alternatively, the wide spectral bandwidth of the structure could be used in very short-pulse modelocked lasers. - Author(s): D.A. Francis ; M.-H. Kiang ; O. Solgaard ; K.Y. Lau ; R.S. Muller ; C.J. Chang-Hasnain
- Source: Electronics Letters, Volume 33, Issue 13, p. 1143 –1145
- DOI: 10.1049/el:19970769
- Type: Article
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The first demonstration of a compact 2D laser beam scanning system using a beam steering fan diode laser array and an Si surface micromachined microscanner is reported. The system is capable of reading and writing operations that detect or generate arbitrary patterns with 7 × 10 pixel resolution. The system demonstrates the viability of these new technologies for applications such as laser scanners for remote sensing and barcode scanning, multi-beam laser printers, and multi-line write 2D laser displays. - Author(s): P. Salet ; Ph. Pagnod-Rossiaux ; F. Gaborit ; A. Plais ; J. Jacquet
- Source: Electronics Letters, Volume 33, Issue 13, p. 1145 –1147
- DOI: 10.1049/el:19970762
- Type: Article
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A highly reflective InGaAsP/InP Bragg mirror is reported for the first time at 1.3 µm. The control of both layer compositions and thicknesses over 2 in wafers in the gas-source molecular-beam epitaxy equipment has enabled the realisation of such a mirror. An absolute reflectivity of 99.6% using a VW technique was recorded on a Pt/Au metallised 40-period mirror. - Author(s): N.K. Dutta ; M. Tayahi ; K.D. Choquette
- Source: Electronics Letters, Volume 33, Issue 13, p. 1147 –1148
- DOI: 10.1049/el:19970765
- Type: Article
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The high speed modulation characteristics and performance in optical fibre transmission links of oxide confined vertical cavity surface emitting lasers are reported. The lasers have bandwidths of 13 GHz. Error-free transmission is obtained for both subcarrier modulated multichannel transmission and directly modulated digital transmission at 8 Gbit/s. - Author(s): S. Matsuo ; K. Tateno ; T. Nakahara ; H. Tsuda ; T. Kurokawa
- Source: Electronics Letters, Volume 33, Issue 13, p. 1148 –1149
- DOI: 10.1049/el:19970752
- Type: Article
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The use of polyimide bonding for hybrid integration of a vertical cavity surface emitting laser on an Si substrate was demonstrated. The threshold current was 3.1 mA and the maximum output power was 2.45 mW for a 15 µm diameter mesa. This technology is suitable for integrating photonic devices with an Si-LSI circuit. - Author(s): J.A. Lott ; N.N. Ledentsov ; V.M. Ustinov ; A.Yu. Egorov ; A.E. Zhukov ; P.S. Kop'ev ; Zh.I. Alferov ; D. Bimberg
- Source: Electronics Letters, Volume 33, Issue 13, p. 1150 –1151
- DOI: 10.1049/el:19970785
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Ground state lasing is reported for vertical cavity lasers containing three-period InGaAs/GaAs vertically coupled quantum dot active regions. The structures include selectively oxidised AlO current apertures and AlO/GaAs reflectors. Experimental devices emitting near 1.0 µm operate continuous wave at 20°C with threshold currents <200 µA and peak power conversion efficiencies exceeding 10%.
Broad spectral bandwidth semiconductor lasers
Compact 2D laser beam scanner with fan laser array and Si micromachined microscanner
Gas-source molecular-beam epitaxy and optical characterisation of highly-reflective InGaAsP/InP multilayer Bragg mirrors for 1.3 µm vertical-cavity lasers
Transmission experiments using oxide confined vertical cavity surface emitting lasers
Use of polyimide bonding for hybrid integration of a vertical cavity surface emitting laser on a silicon substrate
Vertical cavity lasers based on vertically coupled quantum dots
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- Author(s): P.R. Young and R.J. Collier
- Source: Electronics Letters, Volume 33, Issue 13, p. 1151 –1152
- DOI: 10.1049/el:19970755
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A simple extension to the effective-index method (EIM) for the solution of lossy dielectric waveguides, whereby the attenuation constant can be calculated, is presented. The method is valid for structures where both the guiding and surrounding regions have dielectric losses. Furthermore, the attenuation constant is given directly from the lossless solution.
Extension to the effective-index method to include the calculation of losses in dielectric waveguides
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- Author(s): R. Finkele
- Source: Electronics Letters, Volume 33, Issue 13, p. 1153 –1154
- DOI: 10.1049/el:19970789
- Type: Article
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With the help of a polarimetric multilayer model, the change in polarisation of a reflected electromagnetic wave, due to interference effects under the condition of a growing ice layer on a road surface, is studied. From these findings, the parameters for a bistatic fully-polarimetric millimetre-wave radar at 76 GHz are derived. Measurements made in the laboratory, as well as under real traffic conditions, agree with theoretical predictions.
Detection of ice layers on road surfaces using a polarimetric millimetre wave sensor at 76 GHz
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- Author(s): S. Cincotti and I. Daneri
- Source: Electronics Letters, Volume 33, Issue 13, p. 1154 –1156
- DOI: 10.1049/el:19970748
- Type: Article
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A nonlinear circuit model of hysteretic phenomena is presented. The model provides a close prediction of static hysteresis and exhibits realistic dynamic features. The parameters of the circuit model can be identified by proper neural network training. Basic features and results are discussed.
Neural network identification of a nonlinear circuit model of hysteresis
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- Author(s): J. Nakagawa ; M. Shimada ; Y. Notani ; K. Motoshima ; T. Kitayama
- Source: Electronics Letters, Volume 33, Issue 13, p. 1156 –1157
- DOI: 10.1049/el:19970760
- Type: Article
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A compact multichip module (20.4 × 20.4 mm2) providing two major receiver functions (reshaping and retiming) has been developed for 10 Gbit/s lightwave receivers. The variable gain from +11 to +31 dB, the bandwidth of 7.3 GHz, and the sensitivity of –14.5 dBm have all confirmed the applicability of the MCM to 10 Gbit/s lightwave receivers. - Author(s): J. Patscher and R. Eckhardt
- Source: Electronics Letters, Volume 33, Issue 13, p. 1157 –1159
- DOI: 10.1049/el:19970775
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The compensating polarisation-mode dispersion of long fibres using principal states of polarisation is limited in bandwidth when these states vary with frequency. A compensator, containing high birefringent fibres and polarisation controllers is described, which is adapted to these variations and promises an enlarged bandwidth. - Author(s): G.H. Smith ; D. Novak ; C. Lim ; K. Wu
- Source: Electronics Letters, Volume 33, Issue 13, p. 1159 –1160
- DOI: 10.1049/el:19970784
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A full-duplex, optical feeder network for wireless access operating at 39 GHz is presented. The system transports 155 Mbit/s of data and three video channels downstream, and 51.8 Mbit/s upstream over 40 km of standard singlemode fibre. The 39 GHz carrier signal was generated using a novel tripling technique which enables low frequency electronics and optical components to be implemented in the central office. The architecture also incorporates simple, low cost remote base-stations with no millimetre-wave upconverting mixers required. To further minimise cost, an LED was used as the optical source for upstream transmission. - Author(s): E. Lugagne Delpon ; J.L. Oudar ; H. Lootvoet
- Source: Electronics Letters, Volume 33, Issue 13, p. 1161 –1162
- DOI: 10.1049/el:19970745
- Type: Article
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An optical register including dynamic storage of 4 bits and all-optical serial-to-parallel conversion is presented. An optical bistable device is used as a memory element array. Error free operation was demonstrated at a wavelength of 837 nm. - Author(s): P. Callaghan ; N.J. Gomes ; S.K. Suresh Babu ; A.K. Jastrzebski
- Source: Electronics Letters, Volume 33, Issue 13, p. 1162 –1163
- DOI: 10.1049/el:19970783
- Type: Article
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Direct optical injection locking of a monolithic self-oscillating mixer operating at ~6 GHz is reported. The mixing can be achieved with conversion gain and the locking provides considerable improvement in carrier-to-noise ratio for both the oscillation signal and the resultant intermediate-frequency (IF) signal. This type of component may be attractive for systems involving the fibre distribution of microwave reference signals. - Author(s): N. Shah and M. Shadaram
- Source: Electronics Letters, Volume 33, Issue 13, p. 1164 –1165
- DOI: 10.1049/el:19970787
- Type: Article
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p.
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A feedback system for reducing the phase noise in reference signals in analogue fibre optic links is proposed. A mathematical model is developed and confirmed experimentally. It is shown that the phase noise in a 150 MHz reference signal can be reduced up to an offset of 6.7 kHz from the carrier in a 5 km link. - Author(s): N.K. Dutta ; K.Y. Tu ; B.F. Levine
- Source: Electronics Letters, Volume 33, Issue 13, p. 1165 –1167
- DOI: 10.1049/el:19970764
- Type: Article
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The fabrication and performance characteristics of a receiver electronics array for optical data links and parallel optical interconnects are described. The 18-channel array operates at 622 Mbit/s with a 10-15 error rate.
Compact multichip module for 10 Gbit/s lightwave receivers
Component for second-order compensation of polarisation-mode dispersion
Full-duplex broadband millimetre-wave optical transport system for fibre-wireless access
Operation of 4 × 1 optical register as a fast access optical buffer memory
Optical injection locking of a microwave monolithic self-oscillating mixer
Phase stabilisation of reference signals in analogue fibre optic links
Receiver array for optical interconnection
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- Author(s): H.J. Patrick ; C.G. Askins ; R.W. McElhanon ; E.J. Friebele
- Source: Electronics Letters, Volume 33, Issue 13, p. 1167 –1168
- DOI: 10.1049/el:19970780
- Type: Article
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Masks have been produced for long period fibre grating fabrication from commercial dielectric laser mirrors. The masks, which were produced by direct patterning of a photoresist using an argon laser, can withstand in excess of 200 mJ/cm2 per 15 ns pulse of 248 nm laser light. The use of these masks decreased exposure times by 90% and nearly doubled the attenuation (dB) of a long period grating produced by a given UV fluence compared to chrome-on-silica masks. - Author(s): A. Fellegara ; M. Artiglia ; S.B. Andreasen ; A. Melloni ; F.P. Espunes ; S. Wabnitz
- Source: Electronics Letters, Volume 33, Issue 13, p. 1168 –1170
- DOI: 10.1049/el:19970773
- Type: Article
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COST 241 measurements of the nonlinear refractive index, n2, exhibit a large scatter depending on the specific measurement technique. This is largely due to the electrostrictive contribution to the Kerr nonlinearity, as is revealed by the resonant behaviour of n2 (with peak values up to 3.9 10-20 m2 W-1) observed with signal modulation frequencies in the 0.1–1 GHz range. - Author(s): J. Marti ; J.M. Fuster ; R.I. Laming
- Source: Electronics Letters, Volume 33, Issue 13, p. 1170 –1171
- DOI: 10.1049/el:19970788
- Type: Article
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p.
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It is demonstrated experimentally that the dramatic microwave-power degradation that appears in conventional 1550 nm lightwave amplitude modulated systems, due to chromatic dispersion, may be overcome by using tapered linearly chirped fibre gratings. An extension of the frequency-length product of fibre links in optical microwave/millimetre-wave systems can be achieved using chirped fibre gratings.
Amplitude mask patterned on an excimer laser mirror for high intensity writing of long period fibre gratings
COST 241 intercomparison of nonlinear refractive index measurements in dispersion shifted optical fibres at λ=1550 nm
Experimental reduction of chromatic dispersion effects in lightwave microwave/millimetre-wave transmissions using tapered linearly chirped fibre gratings
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- Author(s): Shih-HsiangHsu ; F.G. Johnson ; S.A. Tabatabaei ; S. Agarwala ; J.V. Hryniewicz ; F.J. Towner ; Y.J. Chen ; D.R. Stone
- Source: Electronics Letters, Volume 33, Issue 13, p. 1171 –1173
- DOI: 10.1049/el:19970793
- Type: Article
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The first solid-source molecular beam epitaxial growth of infrared-sensitive In0.53Ga0.47As on top of an AlGaAs/GaAs waveguide for monolithic 1.55 µm receiver applications has been demonstrated using a single, thin InP buffer layer to suppress dislocations. Mesa-type detector arrays were made by chemically assisted ion beam etching. Using a novel dense array fabrication technique, the integration of InGaAs optoelectronic devices with AlGaAs/GaAs waveguide films grown on a GaAs substrate has been demonstrated. - Author(s): S. Suzuki ; S. Sumida ; Y. Inoue ; M. Ishii ; Y. Ohmori
- Source: Electronics Letters, Volume 33, Issue 13, p. 1173 –1174
- DOI: 10.1049/el:19970794
- Type: Article
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p.
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A polarisation-insensitive arrayed-waveguide grating multiplexer is successfully fabricated on an Si substrate by adjusting the thermal expansion of dopant-rich silica-based glass to that of Si. The change in wavelength due to polarisation was kept to within 0.03 nm in a 1 × 8 arrayed-waveguide grating multiplexer with a flat and wide passband having a 3 dB bandwidth of 0.9 nm and a wavelength spacing of 1.6 nm.
InGaAs/InP pin photodiode arrays on AlGaAs/GaAs waveguide films by solid source molecular beam epitaxy
Polarisation-insensitive arrayed-waveguide gratings using dopant-rich silica-based glass with thermal expansion adjusted to Si substrate
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- Author(s): I.S. Simić ; A.J. Zejak ; M.L. Dukić
- Source: Electronics Letters, Volume 33, Issue 13, p. 1174 –1176
- DOI: 10.1049/el:19970756
- Type: Article
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A method for designing multilevel sequences based on chirp and frequency hopping (FH) waveforms is presented. The main feature of the synthesised transmitter-receiver pair of sequences is the very low sidelobe level. The receiver sequences are considered as mismatched compression filter coefficients. The DIRLS (Doppler optimised iterative reweighted least square) algorithm is applied to the iterative optimisation of the receiver mismatched coefficients, as well as to the multilevel transmitter sequence. - Author(s): S.R. Cloude and K.P. Papathanassiou
- Source: Electronics Letters, Volume 33, Issue 13, p. 1176 –1178
- DOI: 10.1049/el:19970790
- Type: Article
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A general formulation for vector wave interferometry is outlined and the optimisation problem is then solved, involving maximisation of the phase coherence. In this way it is shown that wave polarisation effects play an important role in the extraction of information from radar interferograms.
Design of multilevel sequences based on mismatched chirp and FH multilevel sequences for radar and sonar applications
Polarimetric optimisation in radar interferometry
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- Author(s): Jin-TeongOng and Chun-NingZhu
- Source: Electronics Letters, Volume 33, Issue 13, p. 1178 –1179
- DOI: 10.1049/el:19970768
- Type: Article
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p.
1178
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An 11 GHz beacon from the INTELSAT VI satellite was measured in Singapore. Statistics for the rain attenuation and simultaneous rain intensity during an 18 month measurement period are presented and compared to CCIR/ITU-R prediction models. The relationship between the measured probability that a specific attenuation is exceeded for the worst month and that for the average year is also presented.
Slant path attenuation at 11 GHz in Singapore
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- Author(s): J.H. Lee ; S.K. Si ; Y.B. Moon ; E.J. Yoon ; S.J. Kim
- Source: Electronics Letters, Volume 33, Issue 13, p. 1179 –1181
- DOI: 10.1049/el:19970761
- Type: Article
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SiO2 has been successfully used as the dielectric capping material for bandgap tuning in InGaAs/InP MQW for the first time where the InGaAs cap layer is used simultaneously. The samples showed large blue shifts of bandgap energy after RTA treatment (185 and 230 meV at 750 and 850°C, respectively). Samples with SiO2-InP or SiNx-InGaAs cap layer combinations did not show significant energy shifts. - Author(s): K. Mochizuki ; T. Oka ; T. Nakamura
- Source: Electronics Letters, Volume 33, Issue 13, page: 1181 –1181
- DOI: 10.1049/el:19970796
- Type: Article
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p.
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100 nm thick n-type polycrystalline In0.6Ga0.4As layers have been grown on SiO2 by molecular beam epitaxy and their electrical properties have been investigated using Au/Pt/Ti as non-alloyed ohmic metals. A moderate sheet resistance of 4.7 × 102 Ω/□ was obtained, together with a low specific contact resistance of 8 × 10–8 Ωcm2. This material should be useful for attaining high resistances in heterojunction bipolar transistor integrated circuits. - Author(s): M.Q. Huda ; A.R. Peaker ; J.H. Evans-Freeman ; D.C. Houghton ; W.P. Gillin
- Source: Electronics Letters, Volume 33, Issue 13, p. 1182 –1183
- DOI: 10.1049/el:19970750
- Type: Article
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p.
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Sharp, strong luminescence has been obtained from erbium in silicon-germanium quantum well structures. The quantum well layers were implanted with erbium, followed by amorphisation using a silicon implant at 77 K. The structures were then recrystallised by solid phase epitaxial regrowth at 550°C. Compared with bulk silicon systems, stronger erbium activity was observed in the quantum well host. - Author(s): M.R. Mirabedini ; S.H. Goodwin-Johansson ; H.Z. Massoud
- Source: Electronics Letters, Volume 33, Issue 13, p. 1183 –1184
- DOI: 10.1049/el:19970776
- Type: Article
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p.
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A self-aligned MOSFET structure with elevated source and drain was fabricated using electron beam evaporation of silicon. This technology allows the realisation of defect-free junctions as shallow as 200 Å without preamorphisation, source/drain and gate regions doped in one implantation step and without a selective growth process, and source/drain regions with minimum areas and reduced junction capacitances.
Bandgap tuning of In0.53Ga0.47As/InP multiquantum well structure by impurity free vacancy diffusion using In0.53Ga0.47As cap layer and SiO2 dielectric capping
Molecular beam deposition of n-type polycrystalline In0.6Ga0.4As for high resistances in heterojunction bipolar transistor integrated circuits
Strong luminescence from erbium in Si/Si1–xGex/Si quantum well structures
Submicrometre elevated source and drain MOSFET technology using E-beam evaporated silicon
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