Online ISSN
1350-911X
Print ISSN
0013-5194
Electronics Letters
Volume 26, Issue 4, 15 February 1990
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Volume 26, Issue 4
15 February 1990
MESFET fabrication on MOCVD grown Hg1-xCdxTe
- Author(s): P.W. Leech ; P.J. Gwynn ; G.N. Pain ; N. Petkovic ; J. Thompson
- Source: Electronics Letters, Volume 26, Issue 4, p. 221 –222
- DOI: 10.1049/el:19900149
- Type: Article
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The fabrication of the first MESFET structures on Hg1-xCdxTe is reported using MOCVD grown layers on GaAs substrates. The 6µm gate devices exhibited a room temperature transconductance of 1.0mS/mm and pinch off voltage of − 4.0V. The Schottky barrier characteristics of the devices were critically dependent on the stoichiometric x ratio of the Hg1-xCdxTe with diode formation evident only at x > 0.5.
Observation of self-lensing in a 4BCMU-polydiacetylene thin-film waveguide
- Author(s): J. Valera ; A. Darzi ; A.C. Walker ; W. Krug ; E. Miao ; M. Derstine ; J.N. Polky
- Source: Electronics Letters, Volume 26, Issue 4, p. 222 –223
- DOI: 10.1049/el:19900150
- Type: Article
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Strong self-lensing effects have been observed when propagating 35 ps duration, 1.06µm wavelength pulses over 5–10mm distance through thin-film slab waveguides formed from 4BCMU-polydiacetylene. The results are consistent with a negative nonlinear refractive index coefficient (n2 of magnitude 1–2 × 10−13cm2W−1.
Aperture coupled microstrip antenna element design
- Author(s): R. Oostlander ; Y.M.M. Antar ; A. Ittipiboon ; M. Cuhaci
- Source: Electronics Letters, Volume 26, Issue 4, p. 224 –225
- DOI: 10.1049/el:19900151
- Type: Article
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Aperture coupling is investigated as a feed mechanism for microstrip antenna elements. Using modal field expansion, and assuming that coupling is via a magnetic current in the aperture, calculated data on the antenna parameters are obtained. Several samples are manufactured, tested and practical design curves generated at 5.0 and 10 GHz. Good agreement between theory and experiment is obtained. These new results extend the validity of the analysis at high frequencies and will be useful for design and applications involving this type of antenna.
Effects of etch depth and ion implantation on surface emitting microlasers
- Author(s): Y.H. Lee ; J.L. Jewell ; B. Tell ; K.F. Brown-Goebeler ; A. Scherer ; J.P. Harbison ; L.T. Florez
- Source: Electronics Letters, Volume 26, Issue 4, p. 225 –227
- DOI: 10.1049/el:19900152
- Type: Article
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We fabricated low threshold In0.2Ga0.8As surface emitting microlasers having various etch depths and sizes. Comparison of electrical and optical properties was made between deep etched (deeper than the active layer) and shallow etched (shallower than the active layer) microlasers. Shallow etched microlasers were F-ion implanted to limit current spreading. The ion implanted shallow etched samples, when larger than about 5 µm across, show improved room temperature CW characteristics with lower resistances and lower operating voltages than the deep etched microlasers.
Conjugate gradient computation of the current distribution on a tripole FSS array element
- Author(s): M.M. Mokhtar and E.A. Parker
- Source: Electronics Letters, Volume 26, Issue 4, p. 227 –228
- DOI: 10.1049/el:19900153
- Type: Article
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Currents on a single tripole set in a domain of 32 × 64 samples have been computed over a 4 : 1 frequency range, with one sample across the conductor width. Some results are also given for three and give samples across the conductors, indicating for the first time the complexity of the current flow around the junction of the three arms of the element.
Scan limitations of shaped dual-offset reflector antennas for multiple satellite access
- Author(s): T.S. Bird and M.A. Sprey
- Source: Electronics Letters, Volume 26, Issue 4, p. 228 –230
- DOI: 10.1049/el:19900154
- Type: Article
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The performance of offset Cassegrain antennas, shaped to provide wide scan angles, is outlined for use in earth stations which are capable of accessing several satellites simultaneously. The effect on the beam efficiency of scanning over a rectangular-shaped coverage region located about the geostationary arc is described. Limitations on scan performance are discussed as is the effect of satellite tracking by feed movement.
Identification and localisation of gate oxide weaknesses in n-MOS transistors through Fowler-Nordheim tunnelling and SPICE simulation
- Author(s): D. Krakauer and B.S. Doyle
- Source: Electronics Letters, Volume 26, Issue 4, p. 230 –231
- DOI: 10.1049/el:19900155
- Type: Article
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Analysis of the I/V characteristics after Fowler-Nordheim (F-N) injection of n-MOS transistors with weak source-drain overlap regions show the presence of an anomalous ‘hump’. SPICE simulations show that the same hump can arise in localised damage regions along the source-drain periphery, and that this is possibly in the bird's beak region. The results suggest that SPICE simulations and F-N injection can be used to study localised damage in MOS transistors.
Sidelobe suppression in an E-plane sectoral horn antenna
- Author(s): O.W. Ata ; T.M. Benson ; A. Marincic
- Source: Electronics Letters, Volume 26, Issue 4, p. 231 –233
- DOI: 10.1049/el:19900156
- Type: Article
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A finite-difference method is used to design a sectoral horn antenna that uses corner channel inserts to produce a tapered aperture amplitude distribution in the E-plane. The channel inserts effectively suppress sidelobe levels in the radiation pattern. Good agreement is found between predicted and experimental far-field distributions.
High-power single mode InGaAs/AlGaAs laser diodes at 910 nm
- Author(s): D.F. Welch ; M. Cardinal ; B. Streifer ; D. Scifres
- Source: Electronics Letters, Volume 26, Issue 4, p. 233 –234
- DOI: 10.1049/el:19900157
- Type: Article
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Single mode laser diodes have been fabricated from pseudomorphic InGaAs/AlGaAs quantum well epitaxial material operating up to 350 mW CW. The laser output is a single transverse and longitudinal mode to 180 mW, while the spectral output is centred near 910nm.
Comparison of three numerical treatments for the open-ended coaxial line sensor
- Author(s): S. Jenkins ; A.W. Preece ; T.E. Hodgetts ; G.T. Symm ; A.G.P. Warham ; R.N. Clarke
- Source: Electronics Letters, Volume 26, Issue 4, p. 234 –236
- DOI: 10.1049/el:19900158
- Type: Article
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The open-ended coaxial line sensor is commonly used for non-invasive microwave dielectric measurements. A comparison is made between three mathematical treatments that allow the reflection coefficient of the sensor to be derived from the complex permittivity of the material with which it is in contact. It is shown that the discrepancies between values computed by the three methods are much smaller than the predicted measurement uncertainties. Mappings of permittivity contours onto the complex reflection coefficient plane are shown.
High performance DFB-MQW lasers at 1.5 μm grown by GSMBE
- Author(s): A. Perales ; L. Goldstein ; A. Accard ; B. Fernier ; F. Leblond ; C. Gourdain ; P. Brosson
- Source: Electronics Letters, Volume 26, Issue 4, p. 236 –238
- DOI: 10.1049/el:19900159
- Type: Article
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1.5 μm GaInAs multiquantum well distributed feedback lasers have been successfully fabricated on InP grating substrate by GSMBE. DFB mode oscillation at high output power (50 mW) and narrow linewidth (1.3 MHz) have been obtained.
Yield analysis of non-AR-coated DFB lasers with combined index and gain coupling
- Author(s): K. David ; G. Morthier ; P. Vankwikelberge ; R. Baets
- Source: Electronics Letters, Volume 26, Issue 4, p. 238 –239
- DOI: 10.1049/el:19900160
- Type: Article
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The threshold gain difference for DFB lasers with various degrees of gain coupling and different strengths of facet reflectivities is calculated as a function of the random phases between grating and facet reflectivities. From this, the yield for single mode behaviour is determined. It is shown that even for cleaved facets a relevant improvement in terms of threshold gain difference is obtained by introducing a small fraction of gain coupling.
Detectivity of gallium arsenide on silicon substrate photoconductive detectors
- Author(s): M. Constant ; L. Boussekey ; D. Decoster ; B. Bartenlian ; D. Pascal
- Source: Electronics Letters, Volume 26, Issue 4, p. 239 –241
- DOI: 10.1049/el:19900161
- Type: Article
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–241
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Planar photoconductors made with GaAs on silicon substrate have been studied with respect to static and dynamic responsivities as well as noise levels, in the 1Hz–100kHz frequency range. The results obtained have led to the determination of the specific detectivity which is in turn compared to those of GaAs planar photoconductors and Si photodiodes.
Optimisation of UHF antennas
- Author(s): K.E. Stocker and F.M. Landstorfer
- Source: Electronics Letters, Volume 26, Issue 4, p. 241 –243
- DOI: 10.1049/el:19900162
- Type: Article
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The optimisation of a dipole fed reflector antenna is presented. The shape of the reflector and the dipole is varied in order to obtain a constant radiation pattern within a frequency range of nearly one octave.
Widely tunable Y-coupled cavity integrated interferometric injection laser
- Author(s): M. Schilling ; H. Schweizer ; K. Dütting ; W. Idler ; E. Kühn ; A. Nowitzki ; K. Wünstel
- Source: Electronics Letters, Volume 26, Issue 4, p. 243 –244
- DOI: 10.1049/el:19900163
- Type: Article
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A novel tunable single mode light source has been developed in the InGaAsP/InP material system. The Y-coupled cavity (YCC) type integrated interferometric injection (I3) wavelength tunable laser operates in the 1300nm wavelength region with a sidemode suppression of about 20dB. By adjusting the currents through the four all active sections of this YCC-I3-laser, a total tuning range of more than 14nm and continuous tuning of 1.15nm was obtained from nonoptimised first devices.
Performance evaluation of multilevel polarisation shift keying modulation schemes
- Author(s): S. Benedetto and P. Poggiolini
- Source: Electronics Letters, Volume 26, Issue 4, p. 244 –246
- DOI: 10.1049/el:19900164
- Type: Article
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The performance of coherent optical transmission systems using multilevel polarisation modulation is derived in terms of the symbol error probability. Four new multilevel modulation schemes based on equipower signal constellations at the vertices of regular polyhedra inscribed into the Poincaré sphere are proposed. For an increasing number of signals in the constellation, the shot noise performance of these systems show a remarkably less rapid degradation with respect to standard multilevel schemes with an equal number of signals.
Estimation of instantaneous frequency using the discrete Wigner distribution
- Author(s): P. Rao and F.J. Taylor
- Source: Electronics Letters, Volume 26, Issue 4, p. 246 –248
- DOI: 10.1049/el:19900165
- Type: Article
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Analytical expressions for the performance of the discrete Wigner distribution (DWD) in estimating the instantaneous frequency of linear frequency modulated signals in additive white noise are derived and verified using simulation. It is shown that the DWD peak provides an optimal estimate at high input signal-to-noise ratios. The applicability of these results to the general case of nonlinear FM signals is discussed.
Single sided switching networks
- Author(s): J. Gordon and S. Srikanthan
- Source: Electronics Letters, Volume 26, Issue 4, p. 248 –250
- DOI: 10.1049/el:19900166
- Type: Article
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A novel and simple architecture for realising single-sided, rearrangeably-nonblocking, N-port switching networks (N is a power of 2), that uses N/2 log (N/2) elements, together with an efficient routing algorithm with time complexity O(N log (N)) is presented. The networks also exhibit a useful measure of fault tolerance.
Real-time prediction of attenuation for applications to fade countermeasures in satellite communications
- Author(s): L. Dossi
- Source: Electronics Letters, Volume 26, Issue 4, p. 250 –251
- DOI: 10.1049/el:19900167
- Type: Article
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We have simulated the behaviour of a fade countermeasure control system that predicts the attenuation level on the satellite link on the basis of previous attenuation samples, using the experimental rain attenuation data measured at 11.6 GHz in three Italian stations with the Sirio satellite. Some dynamic characteristics of fading are investigated and the performances of prediction algorithms based on linear regression are evaluated.
Novel method for centre wavelength tuning of silica waveguide type Mach-Zehnder multi/demultiplexers
- Author(s): H. Uetsuka ; M. Kurosawa ; K. Imoto
- Source: Electronics Letters, Volume 26, Issue 4, p. 251 –253
- DOI: 10.1049/el:19900168
- Type: Article
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A novel method for tuning the centre wavelength of silica waveguide type Mach-Zehnder multi/demultiplexers (MUX/DEMUXs) has been devised. This tuning is achieved by irradiating a CO2 laser beam onto either arm of the Mach-Zehnder interferometer. In a MUX/DEMUX for channel spacing of 20nm, the centre wavelength is tuned about 3nm and the results closely agree with the calculation.
Parasitic insensitive single amplifier switched capacitor bandpass biquad
- Author(s): C. Psychalinos and I. Haritantis
- Source: Electronics Letters, Volume 26, Issue 4, p. 253 –254
- DOI: 10.1049/el:19900169
- Type: Article
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Switched capacitor biquads based on a loop consisting of two integrators generally require two operational amplifiers. In this letter, a bandpass biquad is proposed which is derived by following a different philosophy based on successive voltage inversions. This allows the use of a single operational amplifier and the realisation of a bilinear transformed continuous-time transfer function.
565 Mbit/s optical DPSK and PSK heterodyne transmission experiment using Nd:YAG lasers at 1.3 μm
- Author(s): A. Schoepflin
- Source: Electronics Letters, Volume 26, Issue 4, p. 255 –256
- DOI: 10.1049/el:19900170
- Type: Article
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A 565 Mbit/s optical DPSK and PSK transmission experiment is described. Stable monolithic Nd:YAG ring lasers were used as light sources. A PSK demodulation scheme achieved a receiver sensitivity of −53.4 dBm and was found to be l.3 dB better than DPSK.
Performance evaluation of polarisation shift keying modulation schemes
- Author(s): S. Benedetto and P. Poggiolini
- Source: Electronics Letters, Volume 26, Issue 4, p. 256 –258
- DOI: 10.1049/el:19900171
- Type: Article
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This letter is concerned with coherent optical transmission systems using polarisation modulation. Exact results are derived for the error probability of all binary schemes so far proposed, including a differential demodulation scheme which allows either electro-optic or electronic polarisation tracking.
Two-dimensional modified Cauer form: circuit and state space realisation
- Author(s): G.E. Antoniou ; C.N. Manikopoulos ; S.E. Mentzelopoulou
- Source: Electronics Letters, Volume 26, Issue 4, p. 258 –259
- DOI: 10.1049/el:19900172
- Type: Article
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A new two-dimensional (2-D) continued fraction expansion, based on the modified Cauer form, has been formulated. Moreover, a minimal state space model realisation has been derived, based on its signal flow graph, using the proposed 2-D continued fraction expansion.
Long wavelength infra-red photoconductive InAsSb detectors grown in Si wells by molecular beam epitaxy
- Author(s): W. Dobbelaere ; J. de Boeck ; M. van Hove ; K. Deneffe ; W. de Raedt ; R. Mertens ; G. Borghs
- Source: Electronics Letters, Volume 26, Issue 4, p. 259 –261
- DOI: 10.1049/el:19900173
- Type: Article
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InAs0.05Sb0.95 photoconductive infra-red detectors have been grown by molecular beam epitaxy in recessed Si wells. The embedded devices exhibited a voltage responsivity of 420V/W at 77K and 300meV photon energy with a load resistor of 100Ω and a bias voltage of 1.5V.
Room temperature CW tunable green upconversion holmium fibre laser
- Author(s): J.Y. Allain ; M. Monerie ; H. Poignant
- Source: Electronics Letters, Volume 26, Issue 4, p. 261 –263
- DOI: 10.1049/el:19900174
- Type: Article
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CW tunable green laser emission between 540 and 553nm (5S2 → 5I8) has been achieved in Ho3+-doped fluorozirconate fibre by upconversion pumping at room temperature, with output powers in excess of 10mW. Laser emission at 0.75μm (3S2 → 5I7) was also observed at the same excited level.
Synthesis procedure for active integrated radiating elements
- Author(s): V.F. Fusco and H.O. Burns
- Source: Electronics Letters, Volume 26, Issue 4, p. 263 –264
- DOI: 10.1049/el:19900175
- Type: Article
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This letter demonstrates a technique for the synthesis of a new integrated active radiating element topology. The approach adopted uses a microwave MESFET operating in large signal mode as the active device in an oscillator configuration. The oscillator has as its parallel feedback element and load element a microstrip patch antenna. The synthesis approach developed in this paper uses numerical optimisation to find the optimum terminal voltages for a given MESFET at a specified frequency. A set of explicit equations are presented in terms of these optimum terminal voltages. These allow the active radiating element terminations to be realised analytically. An NE71000 chip is used as the active device in the active radiating element circuit. Construction is on RT Duriod 5880 and the circuit operated at 10.2 GHz with 30mW power delivered to the antenna.
New generation MMIC amplifier using InGaAs/InAlAs HEMTs
- Author(s): M. Weiss ; G.I. Ng ; D. Pavlidis
- Source: Electronics Letters, Volume 26, Issue 4, p. 264 –266
- DOI: 10.1049/el:19900176
- Type: Article
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An InP based monolithic integrated technology has been developed using InGaAs/InAlAs HEMTs and is applied for the first time to the realisation of a two-stage amplifier. The gain has a peak of 18.4dB at 6.4GHz and exceeds 15dB from 6.0 to 9.5 GHz.
40 GHz measurement on InP/air gap line by picosecond electro-optic sampling
- Author(s): S. Loualiche ; F. Clerot ; G. Audibert
- Source: Electronics Letters, Volume 26, Issue 4, p. 266 –267
- DOI: 10.1049/el:19900177
- Type: Article
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An electro-optic sampling technique has been used to study an air gap microstrip line deposited on a semi-insulating InP substrate at frequencies up to 40 GHz. The 1 ps light pulses are obtained from a compressed mode locked Nd:YAG laser with a rubidium clock as a phase reference. The air gap line is compatible with III-V compound fabrication technology and can be used as an alternative to classical microstrip or coplanar plane wave interconnection techniques used in high speed devices. High frequency operation of this type of line does not require any thinning of the substrate and the effective dielectric constant is reduced by a factor of more than 3 compared with the dielectric constant of the substrate.
242 nm continuous tuning from a GRIN-SC-MQW-BH InGaAsP laser in an extended cavity
- Author(s): M. Bagley ; R. Wyatt ; D.J. Elton ; H.J. Wickes ; P.C. Spurdens ; C.P. Seltzer ; D.M. Cooper ; W.J. Devlin
- Source: Electronics Letters, Volume 26, Issue 4, p. 267 –269
- DOI: 10.1049/el:19900178
- Type: Article
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Multiple quantum well (MQW) buried heterostructure (BH) lasers in the InGaAsP/InP system have been continuously tuned from 1320 nm to 1562 nm in a grating extended cavity. A power output of 45 mW was obtained at 1510 nm and 350 mA continuous current.
Series impedance simulators using one CCII
- Author(s): A. Himura ; Y. Fukui ; M. Ishida ; M. Higashimura
- Source: Electronics Letters, Volume 26, Issue 4, p. 269 –270
- DOI: 10.1049/el:19900179
- Type: Article
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A novel method for realising series impedance simulators using a single second-generation current conveyor (CCII) is proposed. From the basic configuration, six types of impedance simulators are derived.
Uniform frequency modulation responses in narrow linewidth (≤ 200 kHz) compact hybrid lasers
- Author(s): C.Y. Kuo ; E.J. Wagner ; D.A. Ackerman ; C.H. Henry ; Y. Shani ; M.I. Dahbura ; R. Kistler
- Source: Electronics Letters, Volume 26, Issue 4, p. 270 –272
- DOI: 10.1049/el:19900180
- Type: Article
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Uniform frequency modulation (FM) response and narrow linewidth (≤ 200 kHz) are obtained simultaneously from a compact hybrid single frequency semiconductor laser. The hybrid laser consists of a two-electrode gain section, responsible for the uniform FM response, and a narrow band resonant optical reflector (ROR), responsible for the narrow linewidth. Uniform red shifted FM (DC to 200 MHz) is obtained when the section of lower injection current is modulated. The uniform FM response is attributable to inhomogeneous linewidth enhancement in the two laser sections created by nonuniform carrier injection.
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