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Online ISSN 1350-911X Print ISSN 0013-5194

Electronics Letters

Volume 26, Issue 13, 21 June 1990

Volumes & issues:

Volume 26, Issue 13

21 June 1990

Three phase high frequency DC-DC convertor
  • Author(s): R. Rabinovici
  • Source: Electronics Letters, Volume 26, Issue 13, p. 829 –830
  • DOI:  10.1049/el:19900543
  • Type: Article
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  • p. 829 –830 (2)
    A three phase system in a high frequency DC-DC convertor is proposed. Potential advantages of such an implementation include smaller magnetic parts, much lower output and input ripple, higher transformer utilisation factor and efficiency, and lower AC voltages for the same DC output voltage. There are also some disadvantages. More switchers and rectifying diodes are required. A three phase transformer and master oscillator at high frequencies are also necessary.
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New waveguide-to-coplanar waveguide transition for centimetre and millimetre wave applications
Selective silicon epitaxial growth by LPCVD using silane
Demonstration of a 1×2 multichannel grating cavity laser for wavelength division multiplexing (WDM) applications
LiNbO3 acoustic plate mode sensor for dilute ionic solutions
Photoluminescence spectroscopy measurement of elastic strain in heteroepitaxial GaAs films
  • Author(s): T.P. Humphreys ; R.J. Nemanich ; K. Das ; N.R. Parikh ; J.B. Posthill
  • Source: Electronics Letters, Volume 26, Issue 13, p. 835 –837
  • DOI:  10.1049/el:19900548
  • Type: Article
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  • p. 835 –837 (3)
    GaAs films have been grown on silicon and various insulating substrates. These include silicon-on-sapphire, silicon with a buried implanted oxide, and single crystal sapphire. Quantitative comparison of the respective measured shifts in the dominant photoluminescence peaks (7K) indicates that the GaAs layers deposited on silicon-on-sapphire substrates that have been microstructurally upgraded by the double solid-phase epitaxy process are strain-free.
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New impedance transforming rat-race hybrid ring
636 nm room temperature CW operation by heterobarrier blocking structure InGaAlP laser diodes
Transmissive quasidistributed optical fibre sensing scheme for two-state sensors
CAD-oriented cavity model for rectangular patches
Evaluation of currents in the fA range
Anisotype, enhancement-mode, heterojunction gate field-effect transistors
  • Author(s): C.L. Lin ; H.H. Wieder ; R. Zuleeg
  • Source: Electronics Letters, Volume 26, Issue 13, p. 846 –847
  • DOI:  10.1049/el:19900554
  • Type: Article
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  • p. 846 –847 (2)
    Anisotype, p+-GaAs/n-In0.15Ga0.85As heterojunction field-effect transistors, grown by molecular beam epitaxy and fabricated by a self-aligned process, have been investigated for digital logic applications. Peak transconductance of 411 mS/mm and a K-value of 292 mA/V2/mm were obtained for an enhancement-mode device with gate length of 1 μm. Preliminary analysis of a nonisolated device leads to a cut off frequency of 17.5 GHz.
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SPICE simulation of quasi-resonant zero-current-switching DC-DC convertors
  • Author(s): S. Ben-Yaakov ; D. Edry ; Y. Amran ; O. Shimony
  • Source: Electronics Letters, Volume 26, Issue 13, p. 847 –849
  • DOI:  10.1049/el:19900555
  • Type: Article
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  • p. 847 –849 (3)
    A simple, topology-independent method is proposed for simulating the responses of open and closed-loop quasiresonant DC-DC convertors operating in the zero-current-switching mode (ZCS-QRC). The method hinges on the substitution of the resonant network and switch assembly, fundamental in the realisation of such systems, by an equivalent circuit which represents its average behaviour. This permits simulation by a general-purpose electronic circuit simulator such as SPICE. The proposed approach is demonstrated by presenting the simulation results of a buck-boost convertor.
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Enhancement of Faraday rotation in a fibre Fabry-Perot cavity
Iterative learning control of completely irregular plants with initial impulsive action
Simple extraction method for mobility parameters in Si-MOSFETs at 77 K
Selective plasma etching of Si from GaAs-on-Si wafers for microwave via-hole formation
Traffic levels supportable by telepoint systems using current cordless telephone technology
Recognising partially occluded objects by rigid body relaxation matching
Phase-locking of laser diodes
Crest factor minimisation in FDM PSK systems
Computational improvement in the calculation of the natural log of a square matrix
Two-dimensional electron gas base hot electron transistor
Outage probability analysis for microcell mobile radio systems with cochannel interferers in Rician/Rayleigh fading environment
Effect of n-type dopant species on the compensating effects of oxygen implantation in GaAs
  • Author(s): N.J. Whitehead  and  B.J. Sealy
  • Source: Electronics Letters, Volume 26, Issue 13, p. 866 –869
  • DOI:  10.1049/el:19900567
  • Type: Article
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  • p. 866 –869 (4)
    The effect of n-type dopant species on the compensating behaviour of oxygen implants has been studied using Hall effect and C/V profiling techniques. Stronger compensation is retained if silicon rather than selenium is used to form the n-type layer. The compensation has been separated into damage related and oxygen atom related mechanisms, both of which are shown to be n-type dopant sensitive. The dopant sensitivity of the damage related compensation is tentatively described by assuming that localised regions of stoichiometric imbalance are introduced by the oxygen implantation, which promotes activation on the arsenic site. However, the reason for the dopant sensitivity of the oxygen atom related mechanism remains unclear.
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Multichannel FSK transmission experiment at 565 Mbit/s using tunable three-electrode DFB laserss
Spectrum stability of a broadband 1060 nm Nd-doped fibre laser
Fabrication and properties of large core, high NA, high Nd3+ content multimode optical fibres for temperature sensor applications
Wavelength stability of Nd3+-doped fibre fluorescent sources
Buried rectangular GaInAs/InP corrugations of 70 nm pitch fabricated by OMVPE
Polarisation-maintaining fibre using a novel glass system
  • Author(s): Y.T. Ko ; D.J. Digiovanni ; J.B. MacChesney ; J.R. Simpson
  • Source: Electronics Letters, Volume 26, Issue 13, p. 876 –878
  • DOI:  10.1049/el:19900573
  • Type: Article
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  • p. 876 –878 (3)
    A new glass dopant system, AOPO4 is used to form the stress-producing regions of a polarisation-maintaining optical fibre. The advantages of this glass system are that it can match match the refractive index of silica and does not have a fundamental absorption peak near the optical frequencies of interest, allowing it to be placed in close proximity to the fibre core to optimise birefringence. This material was used for the cladding of a preform, which was then flattened to yield an elliptical fibre upon drawing. This fibre demonstrated an extinction ratio at 1.3 μm of 42.5 dB for a 10 m length and 22 dB for 500 m for h = 1.3 × 10−5m−1. The beat length at λ = 0.488 μm was about 9 mm, corresponding to a modal birefringence of 5.3 × 10−5.
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Simple multiplexer circuit for CMOS VLSI
CMOS triode transconductor with high dynamic range
New complementary pairs of sequences
  • Author(s): S.Z. Budišin
  • Source: Electronics Letters, Volume 26, Issue 13, p. 881 –883
  • DOI:  10.1049/el:19900576
  • Type: Article
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  • p. 881 –883 (3)
    A general method for construction of polyphase complementary pairs of sequences of length 2N is presented. This method is based on the recursive algorithms introduced by Golay for binary sequences and by Sivaswamy for polyphase sequences. A modification of the proposed algorithm can generate multilevel and complex sequences of magnitude different from unity. The proposed sequences are suitable for radar applications where complementary sequences different from the known binary sequences are required.
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Efficient CW operation of a 2.9 μm Ho3+-doped fluorozirconate fibre laser pumped at 640 nm
  • Author(s): L. Wetenkamp
  • Source: Electronics Letters, Volume 26, Issue 13, p. 883 –884
  • DOI:  10.1049/el:19900577
  • Type: Article
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  • p. 883 –884 (2)
    CW laser operation of a H03+-doped ZBLAN multimode fibre, emitting within the range 2.83–2.95 μm, was achieved by optical pumping at 640 nm, as a result of excited state absorption of the pump. Thresholds were approximately 65 mW absorbed power for a 90% output coupler and approximately 290 mW with reflection of the fibre end only. Slope efficiencies and maximum output powers were 2.9% and 12.6 mW, and 4.4% and 10.2 mW, respectively.
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n-AlInAs/(InAs)3(GaAs)1 superlattice modulation-doped field effect transistor grown by molecular beam epitaxy
Directional-coupler-based planar concentrator networks
Implementation of integration of Walsh series by flowgraphs
Low-threshold GRIN-SCH AlGaInAs 1.55 μm quantum well buried ridge structure lasers grown by molecular beam epitaxy
  • Author(s): C. Kazmierski ; M. Blez ; M. Quillec ; M. Allovon ; B. Sermage
  • Source: Electronics Letters, Volume 26, Issue 13, p. 889 –891
  • DOI:  10.1049/el:19900581
  • Type: Article
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  • p. 889 –891 (3)
    Two-step MBE/MOVPE epitaxy buried ridge stripe GRIN-SCH quantum well lasers having MBE active structure consisting of Gain As quantum wells and an AlGaInAs continuously graded confinement region have been fabricated and characterised. Devices operating at 1.55μm wavelength with a low CW threshold current of 18.7 mA have been demonstrated. This figure is the best result obtained in the AlGaInAs system. A study of the intrinsic optical response of the active layer showed a very fast decay of the resonance oscillations. A good figure of the optical bandwidth move-out rate 3-9GHzmW−1/2has been observed.
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Simple-iterative method for pattern synthesis using nonuniformly spaced arrays
  • Author(s): M.A. Hassan
  • Source: Electronics Letters, Volume 26, Issue 13, p. 891 –892
  • DOI:  10.1049/el:19900582
  • Type: Article
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  • p. 891 –892 (2)
    A simple and easy to use method for synthesising uniformly-excited linear broadside arrays through element position control is proposed. A single equation must be iteratively solved to obtain one of the interelement spacings. The others are deduced accordingly to a simple relation. The resulting separation between the array elements is optimum in the sense that a best fit is obtained between the synthesised pattern and the desired one.
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Model minimisation for electron devices using simulated annealing in conjunction with parameter extraction
Solution of Poisson equation in p-AlyGa1−yAs/p-Al0.45Ga0.55As/n-GaAs structures
  • Author(s): S.C. Kwok
  • Source: Electronics Letters, Volume 26, Issue 13, p. 894 –896
  • DOI:  10.1049/el:19900584
  • Type: Article
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  • p. 894 –896 (3)
    The Poisson equation in a p-AlyGa1−yAs/p-Al0.45Ga0.55As/n-GaAs structures structure under reverse bias is solved analytically subject to ohmic contact boundary conditions. The solution takes into account the linear variation of the dielectric constant in the compositionally graded region. It is shown that the dielectric constant in the graded region can be approximated by an average dielectric constant with good accuracy in solving for the electrostatic field distribution and potential.
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Analysis of coupling coefficient between two vertical cavity surface emitting lasers for two-dimensional phase-locked array
  • Author(s): H.-J. Yoo ; J.R. Hayes ; Y.-S. Kwon
  • Source: Electronics Letters, Volume 26, Issue 13, p. 896 –897
  • DOI:  10.1049/el:19900585
  • Type: Article
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  • p. 896 –897 (2)
    The coupling coefficient between two adjacent circular vertical cavity surface emitting lasers having an InGaAs strained quantum well active region (λg = 1μm) and a GaAs cavity has been analysed. The analysis was performed for Al0.3Ga0.7As cladding (n = 3.325) and air (n = 1). In order to obtain a coupling coeficient of 10−3, which is known for the stable phase locking of array, the laser separation must beless than 0.25μm for the lasers of radius 0.4μm with air cladding and be less than 0.72μm for the lasers of radius 1.2μm with Al0.3Ga0.7As cladding. Various structures of two-dimensional phase-locked arrays, such as periodic, circular and concentric circular arrays, can be realised by bringing lasers into close proximity of which value can be obtained from the analysis.
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Digital signature scheme based on error-correcting codes
  • Author(s): W. Xinmei
  • Source: Electronics Letters, Volume 26, Issue 13, p. 898 –899
  • DOI:  10.1049/el:19900586
  • Type: Article
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  • p. 898 –899 (2)
    A new digital signature scheme based on error-correcting codes is proposed. The security of this scheme relies on the difficulty of factoring large matrices and the properties of error-correcting codes. The features of our scheme are that the ciphertext for a given message M is not repeated and errors in the ciphertext received can be detected and corrected. If this scheme is combined with the McEliece publickey cryptosystem, we obtain a scheme that can not only sign, but also encipher, messages.
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Carry-save adders for computing the product AB modulo N
  • Author(s): C.K. Koç  and  C.Y. Hung
  • Source: Electronics Letters, Volume 26, Issue 13, p. 899 –900
  • DOI:  10.1049/el:19900587
  • Type: Article
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  • p. 899 –900 (2)
    The letter describes a new algorithm for modulator multiplication using carry-save adders. The proposed algorithm is based on the sign-estimation technique. A carry-save adder structure consisting of three rows of n + 3 simple 1-bit adder cells, and two copies of 3-bit carry look-ahead logic can be used to implement a single step of the algorithm. A completely pipelined array for modular multiplication designed by cascading n carry-save adders performs modulator multiplication at the clock rate.
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Comparison of WDM coupler technologies for use in erbium doped fibre amplifier systems
  • Author(s): A. Lord ; I.J. Wilkinson ; A. Ellis ; D. Cleland ; R.A. Garnham ; W.A. Stallard
  • Source: Electronics Letters, Volume 26, Issue 13, p. 900 –901
  • DOI:  10.1049/el:19900588
  • Type: Article
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  • p. 900 –901 (2)
    Fused-tapered and interference filter technology are compared for specific application in 1480 nm pumped erbium doped fibre amplifiers as WDM multiplexers for signal and pump light. In particular, the temperature, polarisation and wavelength dependence of the coupling ratio are measured and the implications for amplifier gain variability are discussed.
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DC B–H curve tracer with error correction and constant measuring and drawing speed using microcomputer
Erbium-doped fluoride fibre optical amplifier operating around 2.75 μm
Computation of the right-inverse of G(D) and the left-inverse of Ht(D)
Modulated QMF filter banks with perfect reconstruction
Two dimensional grating surface emitting laser arrays with wide lateral extent
Fuzzy intraframe smoothing of a noisy image
Optoelectronic synaptic connection circuit with variable analogue weights
Resonant frequency of wedge shaped microstrip antenna
  • Author(s): R.K. Mishra  and  S.S. Pattnaik
  • Source: Electronics Letters, Volume 26, Issue 13, p. 912 –913
  • DOI:  10.1049/el:19900596
  • Type: Article
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  • p. 912 –913 (2)
    The small bandwidth of microstrip antennas still remains their major drawback and continues to be a major concern. One method used to improve the bandwidth is to make the patch on a wedgeshaped substrate. Only experimental observation on this has been reported. The present work is on a rectangular antenna, whose nonradiating edge is on a plane that intersects the ground plane with an angle, θ. An expression has been derived for the resonant frequency in the dominant mode. The theoretical findings are supported by experimental observation.
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Low voltage InGaAs/InP multiple quantum well reflective Fabry-Perot modulator
  • Author(s): A.J. Moseley ; J. Thompson ; M.Q. Kearley ; D.J. Robbins ; M.J. Goodwin
  • Source: Electronics Letters, Volume 26, Issue 13, p. 913 –915
  • DOI:  10.1049/el:19900597
  • Type: Article
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  • p. 913 –915 (3)
    The first low voltage, substrate access, reflective InGaAs/InP multi-quantum well modulator exploiting the enhanced performance obtainable through the use of an asymmetric Fabry-Perot cavity around the quantum well absorbing region is reported. This device utilises a low reflectivity AlInGaAs/InP multi-layer mirror (R~35%) on the substrate side of the quantum well region, and a high reflectivity metal mirror (R~95%) on the epitaxial side of the cavity. Devices have been fabricated which exhibit a reflectivity change of >30% and contrast ratio of 3 dB at 5 V bias, with a 1.8 dB insertion loss.
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780 nm low threshold current laser fabricated by two-step, solid-phase Zn diffusion
  • Author(s): A. Shima ; T. Kamizato ; A. Takami ; S. Karakida ; K. Isshiki ; H. Matsubara
  • Source: Electronics Letters, Volume 26, Issue 13, p. 915 –916
  • DOI:  10.1049/el:19900598
  • Type: Article
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  • p. 915 –916 (2)
    A Zn diffusion stripe laser is fabricated by the metalorganic chemical vapour deposition and the open-tube, two-step, solid-phase diffusion technique. The threshold current is 9.4 mA and the lasing wavelength is 780 nm at 20°C. The laser operates in the fundamental transverse mode and the astigmatic distance is less than 1 μm. The laser has operated for over 1000 h at 60°C with a power of 3 mW.
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Fundamental limitation on large-signal modulation of semiconductor lasers and its implications for lightwave transmission
  • Author(s): G.P. Agrawal
  • Source: Electronics Letters, Volume 26, Issue 13, p. 916 –918
  • DOI:  10.1049/el:19900599
  • Type: Article
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  • p. 916 –918 (3)
    The performance of single-mode semiconductor lasers under large signal modulation is found to be limited by intraband gain saturation occurring when the on-state output power becomes comparable to the saturation level. The main effect of intraband gain saturation is to increase the fall time associated with the optical pulse. At high bit rates the pulse stretches over several neighbouring bits, thereby affecting the system performance. In the case of 1.55 μm InGaAsP lasers operating at bit rates ∼ 10 Gbit/s intraband gain saturation limits the average power in the range ∼ 10–20 mW for an acceptable system performance.
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Combined amplitude and polarisation shift keying optical coherent modulation
8 GHz full Nyquist HBT comparator
  • Author(s): D. Selle ; D. Carisetti ; T. Ducourant ; P. Bertsch ; P. Boissenot
  • Source: Electronics Letters, Volume 26, Issue 13, p. 919 –921
  • DOI:  10.1049/el:19900601
  • Type: Article
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  • p. 919 –921 (3)
    A very high speed voltage comparator circuit implemented with self-aligned GaAlAs/GaAs heteroj unction bipolar transistors (HBTs) has been demonstrated. The 2 μm emitter width transistors have a current gain cut-off frequency of 30 GHz and a maximum oscillation frequency of 34.8 GHz. A full Nyquist test has been performed up to 8 GHz, the input sensitivity varying from 3 mV at 0.5 GHz to 30 mV at 8 GHz. The hysteresis measured under quasi-static conditions is as low as 0.5 mV.
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Robust blind deconvolution algorithm: variance approximation and series decoupling
Time-division 8:1 multiplexing and demultiplexing system adapting 7B1C code operating at 5 Gbit/s
Monolithic integration of an InGaAs/GaAs/AlGaAs strained layer SQW LED and GaAs MESFET using epitaxial lift-off
  • Author(s): I. Polentier ; L. Buydens ; A. Ackaert ; P. Demeester ; P. van Daele ; F. Depestel ; D. Lootens ; R. Baets
  • Source: Electronics Letters, Volume 26, Issue 13, p. 925 –927
  • DOI:  10.1049/el:19900604
  • Type: Article
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  • p. 925 –927 (3)
    The successful realisation of a fully electrically interconnected optical and electronic device using the epitaxial lift-off technique is reported. The OEIC consists of a high output power InGaAs/GaAs/AlGaAs strained QW LED and a GaAS MESFET driver. The surface emitting LED shows an external quantum efficiency of 1.7%. The output/input ratio of the LED-FET combination was 54 μWV−1 sr−1.
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Efficient Nd:MgO:LiNbO3 waveguide laser
Finite-element analysis of chirowaveguides
  • Author(s): J.A.M. Svedin
  • Source: Electronics Letters, Volume 26, Issue 13, p. 928 –929
  • DOI:  10.1049/el:19900606
  • Type: Article
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  • p. 928 –929 (2)
    A finite-element formulation for the modal analysis of chirowaveguides is described. It consistitutes a generalisation of the vector EH formulation, which has earlier been found to be without spurious nonphysical solutions. The validity of the suggested formulation is confirmed by comparing obtained dispersion relations for a circular chirowaveguide with corresponding exact solutions, the correspondence was found to be excellent.
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IR photodetector with exclusion effect and self-filtering n+ layer
  • Author(s): Z. Djuric ; V. Jovic ; M. Matic ; Z. Jaksic
  • Source: Electronics Letters, Volume 26, Issue 13, p. 929 –931
  • DOI:  10.1049/el:19900607
  • Type: Article
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  • p. 929 –931 (3)
    A ‘vertical’ exclusion homoepitaxial n+n structure for infrared photodetectors in nonequilibrium with certain advantages when comparison with ‘horizontal’ n+n structures is proposed. The exclusion effect was observed at 220 K in experimental InSb n+n structures fabricated by liquid phase epitaxy. It was not possible to utilise the benefits of the suppression of Auger recombination because of the low Shockley-Read lifetime in the substrate.
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Wide angular aperture acousto-optic configurations in biaxial crystals
1.53 μm DFB laser on semi-insulating InP substrate with very low threshold current
  • Author(s): W. Thulke  and  S. Illek
  • Source: Electronics Letters, Volume 26, Issue 13, p. 933 –934
  • DOI:  10.1049/el:19900609
  • Type: Article
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  • p. 933 –934 (2)
    A novel GaInAsP DFB laser structure on a semi-insulating InP substrate is reported. A new contacting scheme is applied which allows both contacts to be placed on the wafer top while preserving the planar surface of the buried-heterostructure laser diode. CW threshold currents as low as7 mA have been measured at 25°C on 200 μm long devices. These are the lowest values reported for 1.5 μm DFB lasers on semi-insulating substrate.
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Design of a hybrid receiver for the olympus spacecraft beacons
Improved current mode control technique for quantum series resonant convertors
Temperature dependence of bending loss in monomode optical fibres
Time-resolved chirp in mode-locked semiconductor lasers
Surface emitting laser arrays with uniformly separated wavelengths
Superposition technique for the generalised stochastic Petri net modelling of degradable systems
Fast computational algorithm for transform coding
  • Author(s): Y. Kato  and  T. Murakami
  • Source: Electronics Letters, Volume 26, Issue 13, p. 944 –946
  • DOI:  10.1049/el:19900616
  • Type: Article
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  • p. 944 –946 (3)
    A transform coding scheme has been widely used in the field of image data compression. A lot of computational power is required for the realtime operation. A new fast computational algorithm, pruned transform coding (PTC), which can reduce the computational complexity compared with the conventional transform coding is proposed. Excellent coding performance is demonstrated through a computer simulation.
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Packaged 2×2 array of InGaAs/InP multiple quantum well modulators grown by double-sided epitaxy
High gain Er3+ -doped fibre amplifier pumped by 820nm GaAlAs laser diodes
275 GHz 3-mask integrated GaAs sampling circuit
  • Author(s): R.Y. Yu ; M. Case ; M. Kamegawa ; M. Sundaram ; M.J.W. Rodwell ; A.W. Gossard
  • Source: Electronics Letters, Volume 26, Issue 13, p. 949 –951
  • DOI:  10.1049/el:19900619
  • Type: Article
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  • p. 949 –951 (3)
    A monolithic GaAs diode sampling head with 275 GHz ( −3dB) bandwidth gated by a nonlinear-transmission-line (NLTL) strobe pulse generator and fabricated using three masks at 3 μm resolution is reported. The sampling circuit step response, measured using a second NLTL as a testsignal, showed a l.9 ps (10–90%) convolved falltime and 24% peak to peak ringing.
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2-MOSFET transresistor with extremely low distortion for output reaching supply voltages
Transmission line model analysis of arbitrary shape symmetrical patch antenna coupled with a director
Rigorous closed-form expressions for the surface wave loss of printed antennas
Asymptotic method in prediction of E plane radiation pattern of rectangular microstrip patch antennas on finite ground
  • Author(s): P. Vaudon ; A. Reineix ; B. Jecko
  • Source: Electronics Letters, Volume 26, Issue 13, p. 956 –957
  • DOI:  10.1049/el:19900623
  • Type: Article
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  • p. 956 –957 (2)
    Limited ground effect on the radiation pattern of microstrip antenna is already known. A simple method to predict E plane radiation, except in the neighbourhood of the geometrical optical boundary that is 8 = 90°, is presented. A very good value of the field on this boundary is given: it means that the leaving pattern could be constructed by interpolation. Good agreement is obtained between the theoretical results and the experimental measurements in the validity domain of the method.
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Low-phase-error offset-compensated switched-capacitor integrator

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