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Online ISSN 1350-911X Print ISSN 0013-5194

Electronics Letters

Volume 26, Issue 12, 7 June 1990

Volumes & issues:

Volume 26, Issue 12

7 June 1990

SC and pass transistor combined circuits
Microchannel plate intensifier response in transverse magnetic field
Investigation on spectral behaviour of novel direct coupling compound fibre ring resonator
Bandpass characteristics of split-modes in asymmetric ring resonators
Novel pressure sensors with multilayer SOI structures
High voltage floating gate array transistors
  • Author(s): M. Levinson ; P. Rossoni ; F. Rock ; B.M. Ditchek
  • Source: Electronics Letters, Volume 26, Issue 12, p. 777 –778
  • DOI:  10.1049/el:19900507
  • Type: Article
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  • p. 777 –778 (2)
    A new high voltage field-effect transistor is described. It features an array of uncontacted gate elements between the main gate and the drain which float so as to inhibit avalanche breakdown. Good agreement is obtained between model predictions and the performance of experimental devices fabricated in Si–TaSi2 semiconductor–metal eutectic material. Transistors are demonstrated which hold off up to 1000 V, compared with the avalanche breakdown potential of 300 V or less expected for conventional devices made with similarly doped silicon.
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Kink-free AlInAs/GaInAs/InP HEMTs grown by molecular beam epitaxy
  • Author(s): L.F. Luo ; K.F. Longenbach ; W.I. Wang
  • Source: Electronics Letters, Volume 26, Issue 12, p. 779 –780
  • DOI:  10.1049/el:19900508
  • Type: Article
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  • p. 779 –780 (2)
    Kink-free AlInAs/GaInAs/InP HEMTs have been fabricated from an MBE structure grown under normal growth condition. Devices with 1 μm gate-length exhibit an extrinsic transconductance of 450mS/mm and a maximum drain current of 600mA/mm which represent the best results for 1 μm gate devices. The DC output conductance shows no kink over the entire gate bias range. The elimination of the kink is attributed to the high quality AlInAs buffer layer and a low mismatch between the AlInAs buffer layer and InP substrate.
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Contention-based reservation protocol in fibre optic local area network with passive star topology
Frequency dependent transmission characteristics of microstrip lines on the finite width substrate or near a substrate edge
  • Author(s): A. Rong  and  S. Li
  • Source: Electronics Letters, Volume 26, Issue 12, p. 782 –783
  • DOI:  10.1049/el:19900510
  • Type: Article
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  • p. 782 –783 (2)
    An accurate hybrid mode analysis of microstrip lines on the finite width substrate or near a substrate edge including finite metallisation thickness is described. The frequency dependent solutions for the transmission characteristics of the microstrip lines are presented. An approach for avoiding the calculation of higher modes in a rectangular waveguide partially filled with a dielectric is also introduced. The results provide useful information for the design of high packing density millimetre wave MMICs.
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Asymmetric gain induced by longitudinal spatial carrier burning in semiconductor lasers
Minimisation of MOSFET-C filter sensitivity by changing connections of capacitors
  • Author(s): B. Galiński
  • Source: Electronics Letters, Volume 26, Issue 12, p. 784 –786
  • DOI:  10.1049/el:19900512
  • Type: Article
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  • p. 784 –786 (3)
    The influence of the finite gain bandwidth-product of operational amplifiers on the centre frequency and quality factor of the dominant pole of resistively symmetric MOSFET-C filters is presented. It is proved that the capacitor connection for which the structure of the filter is resistively and capacitively symmetric minimises the influence of the gain bandwidth-product on the centre frequency and quality factor parameters of the pole.
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Tunable couplers fabricated in K+/Na+ ion exchanged glass
Power distribution in symmetric integrated optic X junction
Field test measurement for 128 kbit/s QPSK signal transmission and delay time spread in 1.5 GHz-band land mobile radio
  • Author(s): T. Furuno  and  S. Ogose
  • Source: Electronics Letters, Volume 26, Issue 12, p. 789 –791
  • DOI:  10.1049/el:19900515
  • Type: Article
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  • p. 789 –791 (3)
    High-speed digital signal transmission is a promising new field of communication services. In land mobile radio communication, transmission quality severely suffers from frequency selective fading under multipath radio wave transmission environments. Field test measurement results for 128 kbit/s QPSK signal transmission and delay time spread in the Tokyo metropolitan area are presented. The two-branch diversity reception method was adopted to combat fading. Bit error rate (BER) performance is obtained as a function of delay time spread.
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Optical steering of dual band microwave phased array antenna using semiconductor laser switching
Signal extrapolation from Hartley transform magnitudes
  • Author(s): G.-S. Chen ; J.-L. Wu ; L.-S. Lee
  • Source: Electronics Letters, Volume 26, Issue 12, p. 793 –794
  • DOI:  10.1049/el:19900517
  • Type: Article
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  • p. 793 –794 (2)
    A novel approach to the problem of signal extrapolation from its Hartley transform magnitudes is presented. Using a newly defined function, it is proved that using only one known sample and the associated Hartley transform magnitudes a finite extended signal can be completely reconstructed. An algorithm for signal reconstruction from short-time Hartley transform (STHT) magnitudes with minimal window overlap can consequently be derived.
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Analysis of arbitrarily shaped coax-fed microstrip antennas with thick substrates
Inclusion of dispersive effects of microstrip lines in formulation using state-space approach of nonlinear microwave circuits
Resonant tunnelling structures with very thin contact layers using nonalloyed Ge/Pd contacts
Fully differential operational amplifiers using CMOS compatible ateral bipolar transistors with improved common-mode regulation
  • Author(s): J.-P. Bardyn  and  A. Kaiser
  • Source: Electronics Letters, Volume 26, Issue 12, p. 798 –799
  • DOI:  10.1049/el:19900521
  • Type: Article
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  • p. 798 –799 (2)
    A new bias circuit for a CMOS compatible lateral bipolar transistor differential pair is presented. The circuit compensates for all process and bias dependent variations of the lateral collector current to emitter current ratio α. Experimental results show that its application to a fully differential amplifier improves the precision of the common-mode output voltage regulation by at least an order of magnitude.
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2.26 Gbit/s optical transmission system with 5B6B line coding
Architecture for high-order multidimensional convolution using polynomial transforms
Some improvements to conventional importance sampling techniques for coded systems using Viterbi decoding
Planar InP/InGaAs avalanche photodetector with integrated dielectric wavelength filter
Stable quarter-plane 2-D lattice filters
High performance submicron pseudo-MODFETs and 2:1 multiplexers using GaAs on InP heteroepitaxial technology
  • Author(s): Y.H. Lo ; M. Bagheri ; P.S.D. Lin ; P. Grabbe ; R. Bhat ; N.G. Stoffel ; T.P. Lee ; D.T. Kong
  • Source: Electronics Letters, Volume 26, Issue 12, p. 807 –809
  • DOI:  10.1049/el:19900527
  • Type: Article
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  • p. 807 –809 (3)
    High performance 0.5 μm gate length InGaAs/GaAs pseudo-MODFETs are demonstrated on InP substrates by MOVPE heteroepitaxial growth. The transistors show a 300 mS/mm transconductance and a 30 GHz cutoff frequency. A 2:1 multiplexer is also made using the same technology. Preliminary testing indicates that the multiplexer can operate up to 10 Gbit/s.
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Neural network approach for the two-dimensional assignment problem
Effects of traffic and local movements on multipath characteristics of an indoor radio channel
Coarse-to-fine least squares stereo matching for 3-D reconstruction
  • Author(s): F. Argenti  and  L. Alparone
  • Source: Electronics Letters, Volume 26, Issue 12, p. 812 –813
  • DOI:  10.1049/el:19900530
  • Type: Article
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  • p. 812 –813 (2)
    Least squares methods have been used for 3-D reconstruction from digital stereo images. A preliminary estimate of the disparity of points to be matched in the two images is required for the convergence of the method. A new approach based on a Gaussian pyramid decomposition of the stereo images and application of the least squares method at each level of the pyramid is presented. Results obtained from digitised stereo images and 3-D reconstruction are reported.
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Dispersion characteristic of the double-sided slotline
Single ended resonant power supply for induction heating
Autoregressive modelling of an indoor radio channel
  • Author(s): S.J. Howard  and  K. Pahlavan
  • Source: Electronics Letters, Volume 26, Issue 12, p. 816 –817
  • DOI:  10.1049/el:19900533
  • Type: Article
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  • p. 816 –817 (2)
    An autoregressive model for the frequency domain characteristics of indoor radio channels is introduced. It is shown that a second order process is sufficient to represent the important statistical characteristics of the channel both in the frequency and the time domains. A comparison is made between the statistical characteristics of the empirical data and of the channel responses regenerated from the model.
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Effect of initial conditions on limit cycle performance of second order sampled data sigma delta modulator
High saturation output power from a neodymium-doped fluoride fibre amplifier operating in the 1300 nm telecommunications window
Parameter estimation using cumulants
  • Author(s): Y. Liu ; J. Soraghan ; T. Durrani
  • Source: Electronics Letters, Volume 26, Issue 12, p. 820 –822
  • DOI:  10.1049/el:19900536
  • Type: Article
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  • p. 820 –822 (3)
    A recursive solution to the Yule–Walker equations for a nonsymmetric Toeplitz matrix is presented. It is shown that the correlation and the non-stationary degree of the input random process can result in greater performance degradation in higher-order moment based algorithms than in autocorrelation based algorithms. New deconvolution algorithms are developed for an input series that exhibits a small degree of correlation. Simulation results are presented that make use of NAG generated random data.
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Beam-propagation analysis of bent step-index slab waveguides
High sensitivity, high gain, long wavelength OEIC receiver with monolithically integrated three-stage preamplifier
  • Author(s): J. Shimizu ; T. Suzaki ; T. Terakado ; S. Fujita ; K. Kasahara ; T. Itoh ; A. Suzuki
  • Source: Electronics Letters, Volume 26, Issue 12, p. 824 –825
  • DOI:  10.1049/el:19900538
  • Type: Article
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  • p. 824 –825 (2)
    A GaAs-on-InP long wavelength OEIC receiver, with a monolithically integrated three-stage preamplifier, was designed using SPICE and fabricated. The three-stage OEIC receiver exhibited excellent performances, such as −32.5 dBm receiver sensitivity and 85 dBΩ transimpedance at 600 Mbit/s. These results indicate the feasibility of integrating large scale electronic circuits, which are considered as the OEIC merits, caused by using both GaAs-on-InP heterostructures and SPICE.
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Ultra-low reflectivity broadband 1.5μm GaInAsP semiconductor optical amplifiers
Use of a fibre loop reflector as downstream receiver and upstream modulator in passive optical network
Erratum: Low threshold distributed Bragg reflector surface emitting laser diode with semiconductor air-bridge-supported top mirror
Erratum: Atmospheric pressure, low temperature (<500°C) UV/ozone oxidation of silicon

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