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Online ISSN 1350-911X Print ISSN 0013-5194

Electronics Letters

Volume 25, Issue 1, 5 January 1989

Volumes & issues:

Volume 25, Issue 1

5 January 1989

Proposal for generation of amplitude-squeezed light (ASL) from laser diodes with electronic feedback
  • Author(s): J. Arnaud
  • Source: Electronics Letters, Volume 25, Issue 1, p. 1 –2
  • DOI:  10.1049/el:19890001
  • Type: Article
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  • p. 1 –2 (2)
    It is generally believed that the amplitude fluctuations of a light beam initially in the coherent state cannot be squeezed below those of shot noise by the simple arrangement of a beamsplitter and a detector, the current from the detector being fed back to the light source or to a modulator. A simple semiclassical theory shows that arbitrary amounts of squeezing can in fact be obtained if a negative opticalconductance device such as a constant-voltage-driven (nonself-oscillating) laser diode is used in place of a conventional detector.
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Brillouin gain curve dependence on frequency spectrum of PSK-modulated signals
Polarisation-insensitive, 500 Mbit/s FSK transmission over 153 km by passive polarisation switching
Fabrication and characterisation of long-wavelength, GaInAs/AlGaInAs/InP modified-MQW lasers
Millimetre-wave active probe frequency-multiplier for on-wafer characterisation of GaAs devices and ICs
  • Author(s): R. Majidi-ahy  and  D.M. Bloom
  • Source: Electronics Letters, Volume 25, Issue 1, p. 6 –8
  • DOI:  10.1049/el:19890005
  • Type: Article
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  • p. 6 –8 (3)
    A millimetre-wave active probe quintupler with an output frequency range of 60 to 100 GHz has been developed. The frequency multiplier circuit was implemented in a coplanar waveguide. Using this probe along with the electro-optic sampling technique, on-wafer millimetre-wave vector measurement up to 100 GHz and time-waveform measurement at 77 GHz of test structures on a GaAs substrate have been demonstrated.
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Large signal mwspice model of DMOS transistor
Absolute frequency identification and stabilisation of DFB lasers in 1.5 μm region
Picosecond synchronisation on mode-locked laser pulses by double constant-fraction triggering
Efficient pump wavelengths of erbium-doped fibre optical amplifier
Silicon permeable base transistors fabricated by selective epitaxial growth
Improved clock buffer with high PSRR for SC circuit applications
Multiple wavelength bidirectional transmission for subscriber loop applications
All-pole transitional Bessel-Chebyshev filters
Linearly tunable Wien bridge oscillator realised with operational transconductance amplifiers
  • Author(s): R. Senani  and  B. Amit Kumar
  • Source: Electronics Letters, Volume 25, Issue 1, p. 19 –21
  • DOI:  10.1049/el:19890014
  • Type: Article
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  • p. 19 –21 (3)
    Starting from the classic Wien bridge oscillator (WBO), a new operational transconductance amplifier (OTA)-based sinusoidal oscillator configuration is evolved which provides linear control of oscillation frequency through an externalcurrent signal: a major advantage over op-amp-based WBOs. In contrast to a recent oscillator by Abuelma'atti and Humood which employs five OTAs, the present circuit employs only three OTAs (along with two capacitors and one resistor), yet still provides the essential properties available in Abuelma'atti and Humood's proposition.
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New fast algorithm for two-dimensional discrete Fourier transform DFT(2n; 2)
Frequency stabilisation of 1.5μm DFB laser using internal second harmonic generation and atomic 87Rb line
Chromatic dispersion characteristics of optical fibre submarine cable under deep sea environmental conditions
  • Author(s): Y. Namihira ; Y. Horiuchi ; H. Wakabayashi
  • Source: Electronics Letters, Volume 25, Issue 1, p. 24 –25
  • DOI:  10.1049/el:19890017
  • Type: Article
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  • p. 24 –25 (2)
    First chromatic dispersion characteristics of pure silica-core matched cladding single-mode fibre submarine cable under deep sea environmental conditions are presented. It is confirmed that variations of zero-dispersion wavelength and dispersion at 1.55μm wavelength of the cable under hydraulic pressure(0-800atm), tension(0-6tons) and temperature change(3-30°C) are less than±0.6nm and±0.06ps/km/nm, respectively.
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Semisystolic implementation of second-order Volterra digital filters based on recurrence algorithm of Volterra filtering
Novel measurement method of linewidth enhancement factor in semiconductor lasers by optical self-locking
  • Author(s): C.H. Shin ; M. Teshima ; M. Ohtsu
  • Source: Electronics Letters, Volume 25, Issue 1, p. 27 –28
  • DOI:  10.1049/el:19890019
  • Type: Article
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  • p. 27 –28 (2)
    We propose a simple, accurate and novel method to measure the value of the linewidth enhancement factor in semiconductor lasers. It utilises the asymmetry of the frequency locking range of a semiconductor laser with the optical feedback from the external CFP cavity. The measured value for a 0.8μm CSP-type AlGaAs laser was 3.07±0.26, which showed good agreement with those measured by other conventional methods.
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Erbium-doped fluorozirconate single-mode fibre lasing at 2.71μm
Feature-based block matching algorithm using integral projections
  • Author(s): J.S. Kim  and  R.H. Park
  • Source: Electronics Letters, Volume 25, Issue 1, p. 29 –30
  • DOI:  10.1049/el:19890021
  • Type: Article
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  • p. 29 –30 (2)
    A fast block matching algorithm using integral projections for the estimation of motion vectors is proposed. In the calculation of the cost function, the proposed algorithm using integral projections as features can reduce the motion estimation computations by a factor of 3 by converting the operations of two-dimensional arrays into those of onedimensional arrays. Also, the proposed method is not sensitive to additive noise. Simulation results based on the sequence of original image and the sequences of noisy image with different standard deviation are presented.
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Throughput of nonpersistent inhibit sense multiple access with capture
  • Author(s): K.J. Zdunek ; D.R. Ucci ; J.L. Locicero
  • Source: Electronics Letters, Volume 25, Issue 1, p. 30 –32
  • DOI:  10.1049/el:19890022
  • Type: Article
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  • p. 30 –32 (3)
    The throughput of an FM modile radio channel employing a nonpersistent multiple accessprotocol with inhibit sensing to provide packet data transmission is presented. With FM capture, the variations in received packet power due to propagation loss and multipath allow a packet to be successfully received in the presence of interfering packets, thus increasing the throughput over FM without capture.
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Maskless selective diffusion of Si into GaAs
Single-mode tapers as ‘fibre fuse’ damage circuit-breakers
Microwave performance of pseudomorphic resonant-tunnelling hot electron transistors at 77 K
  • Author(s): K. Imaurua ; T. Mori ; H. Ohnishi ; S. Muto ; N. Yokoyama
  • Source: Electronics Letters, Volume 25, Issue 1, p. 34 –35
  • DOI:  10.1049/el:19890025
  • Type: Article
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  • p. 34 –35 (2)
    The letter describes the first 77 K microwave measurements for resonant-tunnelling hot electron transistors (RHETs) fabricated using GaInAs/AlInAs pseudomorphic heterostructures. A collector current peak-to-valley ratio of 10 is obtained with a peak collector current density of 2×105A/cm2. A current gain cut-off frequency fT of 63 GHz and a maximum oscillation frequency fmax of 44 GHz are measured at 77 K with an emitter current density of 1.1×105A/cm2
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Butt coupled photodiodes integrated with Y-branched optical waveguides on InP
  • Author(s): W. Döldissen ; F. Fiedler ; R. Kaiser ; L. Mörl
  • Source: Electronics Letters, Volume 25, Issue 1, p. 35 –37
  • DOI:  10.1049/el:19890026
  • Type: Article
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  • p. 35 –37 (3)
    A pair of GaInAs photodiodes was integrated to the output waveguides of an optical Y-branch. Light was butt coupled to the photodetective zone which was formed by GaInAs LPE growth refilling deep etched holes. Total light conversion with more than 90% internal quantum efficiency at 1.55µm wavelength was achieved. The best diodes exhibited dark currents of 1 nA at −10 V bias voltage.
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Monolithic InP/GaInAs pin FET receiver using MOMBE-grown crystal
  • Author(s): Y. Akahori ; S. Hata ; M. Ikeda ; M. Yuda ; S. Uehara
  • Source: Electronics Letters, Volume 25, Issue 1, p. 37 –38
  • DOI:  10.1049/el:19890027
  • Type: Article
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  • p. 37 –38 (2)
    An InP/GaInAs monolithic pin FET is fabricated using MOMBE crystal growth and Be ion implantation techniques. The MOMBE crystal growth technique is shown to be adaptable to the versatile requirements of the receiver crystal. The epigrowth together with the Be ion implantation provides a promising OEIC fabrication technique. The pin FET operated with 1.3 GHz bandwidth and 6 dB gain.
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Electrical impedance images from measured data using iterative reconstruction algorithm
  • Author(s): Z.Q. Chen  and  F.J. Paoloni
  • Source: Electronics Letters, Volume 25, Issue 1, p. 38 –40
  • DOI:  10.1049/el:19890028
  • Type: Article
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  • p. 38 –40 (3)
    Many iterative reconstruction algorithms for electrical impedance tomography have been proposed and tested using simulated data. A comparison between measurements and the simulated model has found that there is a significant difference. This prevents the reconstruction from giving meaningful practical results. By modifying the conventional iterative reconstruction algorithm, the difference has been reduced so that reasonable reconstructions can be obtained from the measured data.
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New construction of Costas sequences
GaInAsP/InP heterojunction bipolar transistors with a double layer base
Frequency characterisation of photodetectors by Fabry-Perot interferometry of modulated semiconductor lasers
Wideband bipolar multiplier IC with high dynamic range for use in coherent optical receivers
Three-electrode DFB wavelength tunable FSK transmitter at 1.53 μm
  • Author(s): D. Leclerc ; J. Jacquet ; D. Sigogne ; C. Labourie ; Y. Louis ; J. Benoit
  • Source: Electronics Letters, Volume 25, Issue 1, p. 45 –47
  • DOI:  10.1049/el:19890033
  • Type: Article
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  • p. 45 –47 (3)
    A three-electrode DFB laser using nonuniform current injection has been shown to present excellent FM response sensitivity (0.7GHz/mA) and bandwidth (> 1 GHz) together with a broadband wavelength continuous tuning capability (Δλ= 2nm, 258 GHz) while maintaining a narrow linewidth (δv ∼ 20 MHz). This structure, easy to fabricate, appears very promising for CMC networks and transmission.
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GaAs single-quantum well GRINSCH ridge lasers grown on InP by MOVPE
  • Author(s): M. van Ackere ; A. Ackaert ; I. Moerman ; D. Lootens ; P. Demeester ; R. Baets ; P. Lagasse
  • Source: Electronics Letters, Volume 25, Issue 1, p. 47 –48
  • DOI:  10.1049/el:19890034
  • Type: Article
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  • p. 47 –48 (2)
    In this letter, lasing action of GaAs graded index separate confinement heterostructure single quantum well lasers grown by MOVPE on InP substrates is reported. Stripe lasers without facet coating show a room temperature thresholdcurrent down to 54 mA under pulsed condition. The differential quantum efficiency attains 20% per facet but preliminary aging measurements indicate a short lifetime.
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Low-loss LD-to-single-mode fibre coupling using twin graded-index rod lens
Single-wire GaAs IC communication technique
Radio propagation for digital cordless telephones at 1700 MHz and 900 MHz
Performance of digital feedforward carrier synchronisers for m-PSK
Guided vector modes of equilateral three-core fibres
Application of on-surface radiation condition to electromagnetic scattering by conducting strip
Analysis of anisotropic multilayer bulk-acoustic-wave transducers
Method of measuring phase errors introduced by frequency multiplier stages
Improved current gain in bipolar transistor with bandgap narrowing in base
  • Author(s): T. Sugii ; T. Yamazaki ; T. Ito
  • Source: Electronics Letters, Volume 25, Issue 1, p. 60 –61
  • DOI:  10.1049/el:19890043
  • Type: Article
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  • p. 60 –61 (2)
    Bandgap narrowing in a base was utilised to improve the current gain of the Si bipolar transistor. It enhances the injection of emitter current into the base. A transistor we fabricated with a base doping concentration of 2 ×1019/cm3 showed a bandgap narrowing of about 90 meV that enables about 25 times more collector current to flow than where there is no narrowing. Bandgap narrowing enables the fabrication of a transistor with a very thin base, enough current gain and moderate base resistance.
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Novel assembly method for laser-diode optical switch module
  • Author(s): K. Yoshino  and  M. Keda
  • Source: Electronics Letters, Volume 25, Issue 1, p. 62 –63
  • DOI:  10.1049/el:19890044
  • Type: Article
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  • p. 62 –63 (2)
    A novel assembly method for laser-diode optical switch modules with a single-mode fibre pigtailed structure has been developed. A chip is aligned with fibres fixed in a package, using the chip itself as a detector. Very compact modules as small as 11 × 8 × 2.6 (mm) are realised, with a gain of 7dB and an isolation of 39 dB observed in the fabricated device. This type of module has good thermal stability in the temperature range 0 to 50°C.
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Measured feedback-induced intensity noise for 1.3 µm DFB laser diodes
  • Author(s): N. Schunk  and  K. Petermann
  • Source: Electronics Letters, Volume 25, Issue 1, p. 63 –64
  • DOI:  10.1049/el:19890045
  • Type: Article
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  • p. 63 –64 (2)
    An experimental set-up has been described, allowing for reliable relative intensity noise (RIN) measurements for a wide feedback range. It could be verified experimentally for DFB lasers that the transition to the coherence collapic regime occurs at significantly larger feedback levels, if the laser is operated at larger optical powers. Furthermore, it has been noted that a large coupling strength κL in DFB lasers is beneficial for improved stability against optical feedback.
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Comment: New public-key distribution systems
Reply: New public-key distribution systems
Coupled bars in rectangular coaxial
Interpretation of signal/noise ratio expressions in FM video transmission
Highly reliable AlGaAs semiconductor lasers with both facets dry-etched
Improved numerical technique for oscillator frequency stability analysis
  • Author(s): K.W. Wan ; E. Vilar ; J.H. Roberts
  • Source: Electronics Letters, Volume 25, Issue 1, p. 71 –72
  • DOI:  10.1049/el:19890051
  • Type: Article
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  • p. 71 –72 (2)
    The letter introduces a statistical quantity, termed the extended Hadamard variance, for the spectral analysis of the frequency fluctuations v(t) of an oscillator. The samples of the time series v(t) are the gated averages vτ or counts of a digital frequency counter spaced by the dead time τd. The analysis technique and the numerical algorithm combine the flexibility of the extended two-sample variance with a much higher resolution spectral analysis capability, as shown by experimental results. The limitations are also indicated.
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CNR requirements for subcarrier-multiplexed multichannel video FM transmission in optical fibre
Fast convergent method for optical flow estimation in noisy image sequences
Preliminary results of 12 GHz radiometric measurements in Brazil
Comment: Modified ID-based cryptosystem using discrete logarithm problem
Diffusion of hydrogen molecules in fluorine-doped single-mode fibres
  • Author(s): A. Iino ; K. Matsubara ; M. Ogai ; Y. Horiuchi ; Y. Namihira
  • Source: Electronics Letters, Volume 25, Issue 1, p. 78 –79
  • DOI:  10.1049/el:19890056
  • Type: Article
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  • p. 78 –79 (2)
    Permeability of hydrogen molecules into core parts of silica optical fibres is found to be dependent on the glass compositions of cladding parts and hydrogen partial pressure around the fibres. Fluorine doping into silica glasses somewhat increases the diffusion coefficients of hydrogen, and the loss increases due to hydrogen molecules in fluorine-doped fibres could be observed sooner than in standard fibres, provided small amounts of hydrogen are generated in optical cables.
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Nonlinear distortion due to optical amplifiers in subcarrier-multiplexed lightwave communications systems
Gabor expansion on orthogonal bases
  • Author(s): P.D. Einziger ; S. Raz ; S. Farkash
  • Source: Electronics Letters, Volume 25, Issue 1, p. 80 –82
  • DOI:  10.1049/el:19890058
  • Type: Article
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  • p. 80 –82 (3)
    In its classical form, the Gabor expansion constitutes a superposition of sliding window functions multiplied by a Fourier kernel. Herein, we propose a generalised formulation whereby the multiplying kernel is presumed to be complete and orthogonal over a prescribed segment of the independent variable, but is otherwise arbitrary. Basis kernels such as Legendre, Chebyshev and Walsh are reasonable candidates. The expected application is to areas such as wave analysis and picture processing.
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Assessment of CCIR worst-month prediction method for rain attenuation
Novel regenerator having simple clock extraction and automatic phase-controlled retiming circuit
  • Author(s): M.-S. Park ; J.-A. Hwang ; H.-T. Choi
  • Source: Electronics Letters, Volume 25, Issue 1, p. 83 –84
  • DOI:  10.1049/el:19890060
  • Type: Article
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  • p. 83 –84 (2)
    A regenerator having simple clock extraction and an automatic phase-controlled retiming circuit is described. A constant phase between the clock and the data is maintained by employing the automatic phase control circuit which is also used as a data transformer from NRZ signal formats to pseudo-RZ signal formats. The experimental result at 565 Mbit/s showed a maximum 12 degrees of phase deviation in the temperature range between -10°C and 60°C.
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Erratum: Measurement procedure for specification of amplitude of sine-shaped RF semiconductor laser current by means of RF DC substitution
Erratum: Dispersive nonlinearity evaluation in a bistable laser diode

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