Online ISSN
1350-911X
Print ISSN
0013-5194
Electronics Letters
Volume 23, Issue 2, 16 January 1987
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Volume 23, Issue 2
16 January 1987
Monte Carlo simulation of GaAs Schottky barrier behaviour
- Author(s): C.M. Maziar and M.S. Lundstrom
- Source: Electronics Letters, Volume 23, Issue 2, p. 61 –62
- DOI: 10.1049/el:19870044
- Type: Article
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–62
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The transport of carriers through the space-charge region (SCR) of a GaAs Schottky barrier is studied by the Monte Carlo simulation technique. Simulation results indicate that the carrier distribution is significantly perturbed from a Max-wellian near the metal-semiconductor boundary, limiting the validity of the commonly used thermionic diffusion model. Phenomena related to the disturbed distribution include increased recombination velocity at the interface and reduced carrier concentration near the junction. The interface recombination velocity is found to be constant with applied bias and the Bethe condition is shown to be more than sufficient to ensure the validity of the thermionic emission model.
Single-laser high-selectivity bidirectional transmission system for local-area-network applications
- Author(s): N.A. Olsson and L.L. Buhl
- Source: Electronics Letters, Volume 23, Issue 2, p. 62 –64
- DOI: 10.1049/el:19870045
- Type: Article
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62
–64
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Bidirectional transmission at 90Mbit/s over 30 km of fibre using a single laser source is demonstrated. At the subscriber end, a narrowband resonant optical amplifier serves not only as amplifier, but also as detector, modulator and optical filter. The coherent Rayleigh noise, encountered in previous single-laser bidirectional systems, is eliminated by using a subcarrier modulation scheme. The demonstrated capacity is more than an order of magnitude improvement over similar systems.
Self-aligned AlGaAs/GaAs HBT with InGaAs emitter cap layer
- Author(s): K. Nagata ; O. Nakajima ; T. Nittono ; H. Ito ; T. Ishibashi
- Source: Electronics Letters, Volume 23, Issue 2, p. 64 –65
- DOI: 10.1049/el:19870046
- Type: Article
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–65
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A new self-aligned AlGaAs/GaAs HBT with an InGaAs emitter cap layer is presented. This HBT has nonalloyed ohmic contacts to the emitter and base that are formed simultaneously and in a self-aligned manner. The low emitter contact resistance of 1.4×10-7 Ωcm2 and the high transconductance per unit area of 3.3 mS/μm2 demonstrate the effectiveness of this structure.
Calculation of the radiation losses of groove-guidee-plane bends
- Author(s): J. Meiβner
- Source: Electronics Letters, Volume 23, Issue 2, p. 65 –67
- DOI: 10.1049/el:19870047
- Type: Article
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65
–67
(3)
An approximate closed-form expression for the evaluation of groove-guide radiation losses is presented and confirmed by measurements.
Comparison of regenerator tolerance to sinusoidal and Gaussian alignment jitter
- Author(s): I. Fletcher
- Source: Electronics Letters, Volume 23, Issue 2, p. 67 –68
- DOI: 10.1049/el:19870048
- Type: Article
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p.
67
–68
(2)
The letter describes a theoretical model for the prediction of BER penalty at a digital regenerator where the probability density function of the alignment jitter at the regenerator is known. A numerical integration method is used to examine cases of particular interest to systems engineers.
Bulk waves radiated from an interdigital metallic transducer deposited on an anisotropic substrate
- Author(s): Y.W. Zhang and M. Planat
- Source: Electronics Letters, Volume 23, Issue 2, p. 68 –69
- DOI: 10.1049/el:19870049
- Type: Article
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p.
68
–69
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The whole acoustic field emanating from a metallic interdigital transducer (IDT) deposited on an anisotropic half-space is computed. Extending the classical Lamb approach, it is shown that the field can be expressed by an integral whose singularities give rise to both Rayleigh surfaces waves (SAWs) and well collimated bulk waves (BAWs). For a Y-cut, Z-propagation quartz crystal a horizontal shear wave is excited; it is shown that the orientation and width of the main lobe can be chosen by changing the frequency.
Coupled-mode analysis of a periodic array of diode lasers
- Author(s): J.Z. Wilcox ; J.J. Yang ; M. Jansen
- Source: Electronics Letters, Volume 23, Issue 2, p. 69 –70
- DOI: 10.1049/el:19870050
- Type: Article
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p.
69
–70
(2)
A generalised eigenmode analysis of phased-array diode lasers is presented that takes account of modal overlap between adjacent channels. The effect of the overlap is to modify supermode gain splitting nonuniformly. Current spreading suppresses supermode discrimination, resulting in single-lobed far-field operation of arrays with closely spaced lasers.
Signal transmission with optical carriers in multimode range of single-mode fibres
- Author(s): R. Ries
- Source: Electronics Letters, Volume 23, Issue 2, p. 71 –72
- DOI: 10.1049/el:19870051
- Type: Article
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p.
71
–72
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Low-cost optical transmission systems consisting of GaAlAs transmitter devices, Si-APD receivers and single-mode fibres with 1.2 μm cutoff have been investigated. Theoretical and experimental results are presented which demonstrate the potential as well as the limitations of such systems for local network applications.
Ti:LiNbO3 intersecting waveguides
- Author(s): G.A. Bogert
- Source: Electronics Letters, Volume 23, Issue 2, p. 72 –73
- DOI: 10.1049/el:19870052
- Type: Article
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72
–73
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Experimental crosstalk and insertion loss characteristics of Ti: LiNbO3 intersecting channel waveguides are presented. A single-Δn intersection region is used. The characteristics of both TE and TM are presented for angles of 2–20°. Our aim was to determine the minimum angle required to produce negligible loss and crosstalk (< – 35 dB) when signals are routed across one another in switching architectures.
Optical damage resistance of ion-implanted LiNbO3 waveguides
- Author(s): E. Glavas ; P.D. Townsend ; G. Droungas ; M. Dorey ; K.K. Wong ; L. Allen
- Source: Electronics Letters, Volume 23, Issue 2, p. 73 –74
- DOI: 10.1049/el:19870053
- Type: Article
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p.
73
–74
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The letter reports the first data for optical damage studies of ion-implanted planar waveguides in LiNbO3. No optical damage was detected at visible laser wavelengths using laser sources of up to 5 W. In a comparison of ion-implanted and Ti-diffused waveguides the optical damage threshold for the ion-implanted guides is at least 100 times greater.
Bulk-acoustic-wave transducer consisting of interdigital electrodes on a grooved surface of LiNbO3
- Author(s): K. Nakamura and H. Shimizu
- Source: Electronics Letters, Volume 23, Issue 2, p. 74 –75
- DOI: 10.1049/el:19870054
- Type: Article
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p.
74
–75
(2)
A new BAW transducer consisting of a groove array on a surface of LiNbO3 and finger electrodes on the top surface and the groove bottoms is described. It is demonstrated that the shear-wave transducer fabricated on X-cut LiNbO3 has a conversion loss as low as 2.5 dB and a fractional bandwidth of about 110%.
Low-voltage modulator and self-biased self-electro-optic-effect device
- Author(s): J.S. Weiner ; A.C. Gossard ; J.H. English ; D.A.B. Miller ; D.S. Chemla ; C.A. Burrus
- Source: Electronics Letters, Volume 23, Issue 2, p. 75 –77
- DOI: 10.1049/el:19870055
- Type: Article
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p.
75
–77
(3)
We have demonstrated a quantum-well waveguide modulator with large (7:1) on/off ratio at low bias voltage (less than 1V) compatible with high-speed electronics. The unique structure of this device permits bistable and other self-electro-optic-effect operations without an external power supply.
Very high-transconductance heterojunction field-effect transistor (HFET)
- Author(s): G.W. Taylor ; M.S. Lebby ; T.Y. Chang ; R.N. Gnall ; N. Sauer ; B. Tell ; J.G. Simmons
- Source: Electronics Letters, Volume 23, Issue 2, p. 77 –79
- DOI: 10.1049/el:19870056
- Type: Article
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p.
77
–79
(3)
A new form of FET has been demonstrated in the GaAs/AlGaAs material system. Designated the HFET, it has shown a transconductance of 500mS/mm at 300K for a nominal Lg =2μm and a drain current of 430mA/mm. The conduction occurs in an inversion channel at the heterointerface.
Tolerance requirements for the drawing ratio of single-mode fibres with arbitrary refractive-index profile
- Author(s): G. Trommer
- Source: Electronics Letters, Volume 23, Issue 2, p. 79 –80
- DOI: 10.1049/el:19870057
- Type: Article
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p.
79
–80
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The letter presents a simple formula for the dispersion sensitivity of single-mode fibres due to arbitrary variations of the drawing ratio. For this calculation only the requested dispersion coefficient of the ideal fibre is required without the need for data on the actual index profile. As an example the tolerance requirements of broadband fibres are investigated.
Class E switching-mode power amplifier for high-frequency electric process heating applications
- Author(s): K. Thomas ; S. Hinchliffe ; L. Hobson
- Source: Electronics Letters, Volume 23, Issue 2, p. 80 –82
- DOI: 10.1049/el:19870058
- Type: Article
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p.
80
–82
(3)
The letter is concerned with the application of a class E convertor to electric process heating. A simple efficient convertor is described which is suitable for high-frequency electric process heating loads.
M-Profile ray tracing technique for multipath propagation
- Author(s): H.N. Kheirallah ; H.M. Rashwan ; A.K. Aboul-Saoud
- Source: Electronics Letters, Volume 23, Issue 2, p. 82 –83
- DOI: 10.1049/el:19870059
- Type: Article
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82
–83
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A model for the modified refractivity is suggested and used in a new and simple ray tracing approach for multipath propagation. The technique is then used to study the variations in ray path parameters for different path geometries.
Gold-based gate-sinking enhanced by inhomogeneities in power MESFETs
- Author(s): C. Canali ; G. Donzelli ; F. Fantini ; M. Vanzi ; A. Paccagnella
- Source: Electronics Letters, Volume 23, Issue 2, p. 83 –84
- DOI: 10.1049/el:19870060
- Type: Article
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p.
83
–84
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Gate contact degradation of power MESFETs with gold-based gate metallisations is enhanced by local inhomogeneities, such as thermal gradients and border effects.
Aging characteristics of AlGaInP/GaInP visible-light lasers (λL = 678 nm)
- Author(s): A. Gomyo ; K. Kobayashi ; S. Kawata ; I. Hino ; T. Suzuki
- Source: Electronics Letters, Volume 23, Issue 2, page: 85 –85
- DOI: 10.1049/el:19870061
- Type: Article
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85
(1)
An aging test for AlGaInP/GaInP visible-light lasers (λL = 678 nm) with 3–5 mW lasing output power was carried out for over 2000 h at room temperature. Significant degradation has not been observed during this test. The results indicate that the AlGaInP laser diodes have a considerable lifetime, suitable for practical use.
Reflector-backed perfectly blazed strip gratings simulate corrugated reflector effects
- Author(s): K.A. Jose and K.G. Nair
- Source: Electronics Letters, Volume 23, Issue 2, p. 86 –87
- DOI: 10.1049/el:19870062
- Type: Article
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p.
86
–87
(2)
Perfect blazing of reflector-backed thin strip gratings to n = − 1 spectral order for both TE and TM polarisations is compared with corrugated reflection gratings. The strip gratings are shown to be simulating effects of rectangular corrugations in conducting surfaces.
Static random-access memory based on self-aligned-gate (Al,Ga)As/n+-GaAs superlattice modulation-doped FETs
- Author(s): D.K. Arch ; J.K. Abrokwah ; P.J. Vold ; A.M. Fraasch ; B.L. Grung ; N.C. Cirillo
- Source: Electronics Letters, Volume 23, Issue 2, p. 87 –88
- DOI: 10.1049/el:19870063
- Type: Article
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p.
87
–88
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A 64 bit, fully decoded static random-access memory (SRAM) has been fabricated utilising self-aligned-gate (Al,Ga)As/n+-GaAs superlattice modulation-doped FETs (MODFETs) for the first time. Read access times of 1.1 ns at 270 μW/bit and minimum write-enable pulse widths less than 2 ns were demonstrated at room temperature. Typical room-temperature extrinsic transconductances and output conductances of 240 mS/mm and 7 mS/mm, respectively, were observed for the superlattice MODFET devices.
Adaptive LSP filter
- Author(s): B.M.G. Cheetham
- Source: Electronics Letters, Volume 23, Issue 2, p. 89 –90
- DOI: 10.1049/el:19870064
- Type: Article
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p.
89
–90
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Line spectral pair (LSP) coefficients have been proposed as alternative representations of LPC parameters for low-bit-rate speech coding. The letter presents an LMS-type adaptive digital filter for directly calculating even-order LSP coefficients on a sequential basis. The technique is demonstrated for fourth-order adaption and may be generalised to higher orders.
Tailoring the I/V characteristics of a superlattice tunnel diode
- Author(s): R.A. Davies ; M.J. Kelly ; T.M. Kerr
- Source: Electronics Letters, Volume 23, Issue 2, p. 90 –92
- DOI: 10.1049/el:19870065
- Type: Article
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–92
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We demonstrate the exploitation of the precise growth control afforded by molecular beam epitaxy (MBE) to realise the design of a superlattice tunnel diode with a large negative differential resistance (NDR) feature (peak-to-valley ratio of 2.5:1) at room temperature.
Novel nonresonant optoelectronic logic device
- Author(s): P. Wheatley ; P.J. Bradley ; M. Whitehead ; G. Parry ; J.E. Midwinter ; P. Mistry ; M.A. Pate ; J.S. Roberts
- Source: Electronics Letters, Volume 23, Issue 2, p. 92 –93
- DOI: 10.1049/el:19870066
- Type: Article
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p.
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–93
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We report the first demonstration of a novel optical logic device having an inverting characteristic which displays hard-limiting and optical gain of more than 10.
Wavelength dependence of high-performance AlGaAs/GaAs waveguide phase modulators
- Author(s): A. Alping ; X.S. Wu ; L.A. Coldren
- Source: Electronics Letters, Volume 23, Issue 2, p. 93 –95
- DOI: 10.1049/el:19870067
- Type: Article
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93
–95
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The wavelength dependence of doped, reverse-biased channel waveguide phase modulators with very high efficiencies are reported between 1.06 μm and 1.53 μm. Figures-of-merit ranging from 61°/V mm and 40°/V mm to 27°/V mm and 16°/V mm for the TE and TM modes, respectively, have been obtained. By deducting the easily calculated linear electro-optic and free-carrier plasma effects, the data gives the first real measure of the dispersion associated with the shift in the absorption edge. This dispersion, which is the primary contribution to the quadratic electro-optic effect in semiconductors, accounts for more than half of the measured phase shift at 1.06 μm with the doping level used.
Opening the knapsack by DFTs
- Author(s): T. Maseng
- Source: Electronics Letters, Volume 23, Issue 2, p. 95 –96
- DOI: 10.1049/el:19870068
- Type: Article
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95
–96
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A new simple algorithm which uses discrete Fourier transforms for breaking the general knapsack problem (also known as the subset sum problem) is presented along with the number of operations required for solving the problem. The method is applicable when the elements belong to a Galois field as well as that of a set of integers and is most effective for high-density knapsacks.
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