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Online ISSN 1350-911X Print ISSN 0013-5194

Electronics Letters

Volume 23, Issue 1, 2 January 1987

Volumes & issues:

Volume 23, Issue 1

2 January 1987

Model for the switching voltage of miss devices based on an analogy with the thyristor
Waveguide-integrated pin photodiode on InP
Extended power method and stability of linear discrete-time systems
Generation of a single-lobe radiation pattern from a phased-array laser using a near-contact variable phase-shift zone plate
  • Author(s): S. Thaniyavarn  and  W. Dougherty
  • Source: Electronics Letters, Volume 23, Issue 1, p. 5 –7
  • DOI:  10.1049/el:19870004
  • Type: Article
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  • p. 5 –7 (3)
    A very simple and practical technique to generate a stable, narrow-angle single-lobe far-field radiation pattern from an ordinary twin-lobe phase-locked laser diode array is demonstrated. A variable phase-shift zone plate mounted close to the laser output facet is used to readjust the phase distribution of the array into an all-in-phase distribution producing the desired single narrow-lobe far-field pattern.
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Growth temperature dependence of low-noise MESFET in molecular-beam epitaxy
Characterisation of n-channel germanium MOSFET with gate insulator formed by high-pressure thermal oxidation
Influence of impurities on loss increase in optical fibre
Very high-transconductance short-channel GaAs MESFETs with Ga0.3Al0.7As buffer layer
  • Author(s): K.Y. Lee ; M. Al-Mudares ; S.P. Beaumont ; C.D.W. Wilkinson ; J. Frost ; C.R. Stanley
  • Source: Electronics Letters, Volume 23, Issue 1, p. 11 –12
  • DOI:  10.1049/el:19870008
  • Type: Article
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  • p. 11 –12 (2)
    MESFETs with 0.17μm gate length were manufactured with an n+GaAs active layer (3 × 1018cm-3) and an undoped Ga0.3Al0.7As buffer layer grown by molecular-beam epitaxy. The deives showed very high transconductance (700mS/mm) with good pinchoff characteristics. The experimental transconductance values were compared with calculated ones using a model that assumed total carrier confinement within the active layer by a barrier potential at the GaAs/GaAlAs interface. The results suggest that very high-transconductance short-gate-length MESFETs can be fabricated with a heavily doped GaAs active layer provided that the carrier density in the active layer is maintained at the doping level.
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Frequency modulation and spectral characteristics for a 1.5μm phase-tunable DFB laser
  • Author(s): S. Murata ; I. Mito ; K. Kobayashi
  • Source: Electronics Letters, Volume 23, Issue 1, p. 12 –14
  • DOI:  10.1049/el:19870009
  • Type: Article
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  • p. 12 –14 (3)
    Frequency modulation (FM) and spectral characteristics for a 1.5μm phase-tunable DFB (PT DFB) laser have been studied experimentally. As tuning current was increased, light output, lasting wavelength, FM efficiency and spectral linewidth changed periodically. The continuous-wavelength tuning range was over l.2nm (150 GHz). A high FM efficiency, more than 16GHz/mA, and a flat FM response, up to 100MHz, were obtained.
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Single-mode single-polarisation fibre using resonant absorbing effect
Resolution of moment equations in a nonlinear optical amplifier
Molybdenum germanide ohmic contact to n-GaAs
  • Author(s): K. Daoud-Ketata ; C. Dubon-Chevallier ; C. Besombes ; J.F. Bresse ; P. Henoc
  • Source: Electronics Letters, Volume 23, Issue 1, p. 17 –18
  • DOI:  10.1049/el:19870012
  • Type: Article
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  • p. 17 –18 (2)
    GeMo refractory ohmic contacts for n-type GaAs with a specific contact resistivity as low as 10-6Ωcm2 have been obtained on 1018cm-3 epitaxial layers. This low resistivity was obtained by contact annealing under As overpressure. Contacts using As-doped Ge layers and annealed without As overpressure have also been realised; in this case the obtained resistivity was 5 × 10-6Ωcm2. The ohmic contact formation resulted from the creation of an n+ layer by Ge overdoping and the formation of a molybedenum germanide stable phase.
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Nonlinear feedback control of a class of nonlinear systems
Quasisinusoidal oscillators with cubic-type nonlinearity
Current-mirror phase-shifter oscillator
Wideband variable peaking AGC amplifier for high-speed lightwave digital transmission
Dispersion of pure GeO2 glass core and f-doped GeO2 glass cladding single-mode optical fibre
  • Author(s): T. Hosaka ; S. Sudo ; K. Okamoto
  • Source: Electronics Letters, Volume 23, Issue 1, p. 24 –26
  • DOI:  10.1049/el:19870017
  • Type: Article
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  • p. 24 –26 (3)
    The letter investigates the dispersion of GeO2 glass core and F-doped GeO2 glass cladding single-mode optical fibre. It is estimated that the total dispersion goes to zero at about λ = 1.77 μm. The material dispersions of these glasses are also measured. Material dispersion of GeO2 glass, which contains fluorine of 0.41 wt%, vanished at λ = 1.722μm. This occurs at λ = 1.734 μm for pure GeO2 glass.
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Comment: Temperature distribution on ceramic substrates
Reply: Temperature distribution on ceramic substrates
Mutual coupling between circular disc microstrip antennas
Resonant tunnelling electron spectroscopy
Low-loss TM-pass polariser fabricated by proton exchange for z-cut ti:LiNbO3 waveguides
General probability density function of packet service times for computer networks
  • Author(s): M. Ilyas
  • Source: Electronics Letters, Volume 23, Issue 1, p. 31 –32
  • DOI:  10.1049/el:19870023
  • Type: Article
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  • p. 31 –32 (2)
    The letter presents derivations of a generalised probability density and distribution functions of packet service times for computer communication networks. Included in the derivation are the effects of message segmentation into packets and the effects of control traffic. We also present the first and the second moments of the packet service times. These expressions can be used in modelling and analysis of computer networks by assigning appropriate values to various parameters.
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Efficient frequency up-conversion via energy transfer in fluoride glasses
Entirely VPE-grown 1-5μm DFB lasers with low threshold currents
  • Author(s): T. Nishibe ; M. Funamizu ; H. Okuda ; H. Furuyama ; Y. Hirayama ; M. Nakamura ; M. Iwamoto
  • Source: Electronics Letters, Volume 23, Issue 1, p. 34 –35
  • DOI:  10.1049/el:19870025
  • Type: Article
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  • p. 34 –35 (2)
    Entirely hydride VPE-grown 1.5μm DFB lasers have been obtained by means of high controllability in film thickness and alloy composition for the GalnAsP/InP system. A low threshold current of 13 mA was achieved by improving the growth method for the layer burying the grating. High uniformity in threshold current and lasing wavelength (Ith = 27.3 ± 9.7 mA, λ = 15571 ± 12Å) was obtained.
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Slope angle influence on silicon doping in AlGaAs/GaAs MBE-grown on stepped surface of (100) GaAs substrate
  • Author(s): H. Nobuhara ; O. Wada ; T. Fujii
  • Source: Electronics Letters, Volume 23, Issue 1, p. 35 –36
  • DOI:  10.1049/el:19870026
  • Type: Article
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  • p. 35 –36 (2)
    Formation of a series of lateral p-n junctions has been observed in molecular-beam-epitaxial Si-doped AlGaAs/GaAs grown on a graded-step surface of a (100) GaAs substrate. The lateral p-n junction has been found to be formed in a region where a slope angle θ of the graded-step surface changes gradually; the conductivity is n-type for 0° < θ < 21° but it converts to p-type for θ > 31°. A critical angle in the conductivity reversal has been first observed on a single substrate.
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Ti:LiNbO3 three-waveguide polarisation splitter
  • Author(s): G.A. Bogert
  • Source: Electronics Letters, Volume 23, Issue 1, p. 37 –38
  • DOI:  10.1049/el:19870027
  • Type: Article
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  • p. 37 –38 (2)
    A Ti: LiNbO3 waveguide device that combines the beam-splitter and polariser functions into a single component is presented. This three-waveguide device is designed to split the TM mode equally to the two outer output ports while guiding the TE mode out of the centre guide. The device is low-loss, provides equal splitting and passively delivers–20 dB of polarisation extinction. Electro-optical tuning would improve this value.
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InGaAs PIN photodiodes grown on GaAs substrates by metal organic vapour phase epitaxy
  • Author(s): A.G. Dental ; J.C. Campbell ; C.H. Joyner ; G.J. Qua
  • Source: Electronics Letters, Volume 23, Issue 1, p. 38 –39
  • DOI:  10.1049/el:19870028
  • Type: Article
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  • p. 38 –39 (2)
    We have fabricated and characterised high-efficiency, long-wavelength PIN photodiodes on In0.53Ga0.47As/InP/GaAs wafers grown by metal organic vapour phase epitaxy. Initial measurements indicate that good quality devices can be made in this highly stressed material system (lattice mismatch ~3.8%). These results suggest the possibility of fabricating optoelectronic integrated circuits (OEICs) by combining InGaAs(P) electro-optic devices with high-speed GaAs electronics.
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Soi by wafer bonding with spin-on glass as adhesive
  • Author(s): A. Yamada ; T. Kawasaki ; M. Kawashima
  • Source: Electronics Letters, Volume 23, Issue 1, p. 39 –40
  • DOI:  10.1049/el:19870029
  • Type: Article
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  • p. 39 –40 (2)
    Two silicon wafers were bonded together with spin-on glass as the adhesive. Bonding strength depended heavily on the surface treatment. This was also confirmed by IR reflection measurement. A silicon-on-insulator (SOI) structure was achieved by thinning one of the wafers after the bonding. The resultant 5μm-thick SOI layer was stable at high temperatures and showed no degradation in its electrical characteristics.
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Numerical convergence in calculating the propagation constants by the transverse modal analysis technique
Multiple-wave generation due to four-wave mixing in a single-mode fibre
Observations on 2 and 7.5 GHz microwave links during dust storms
Novel sorter architecture for image processing rank order filters
  • Author(s): U. Kleine
  • Source: Electronics Letters, Volume 23, Issue 1, p. 45 –46
  • DOI:  10.1049/el:19870033
  • Type: Article
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  • p. 45 –46 (2)
    In this letter a novel sorter architecture for two-dimensional rank order filters is presented. Rank order filters are widely used in image processing applications to smooth noisy images without perturbing edge structures. The main element of such filters is a sorter. In the letter a parallel sorting network is described, based on Batcher's odd-even merge algorithm. The required chip area of the sorter network is proportional to N(log2N)[(log2N) + 1], where N is the number of pixels to be sorted. An example of a 25-pixel sorter network is given.
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Sensitivity of driving-point function based wave digital filters
Very broadband flat coupling hybrid ring
Coherent optical fibre system with Zeeman lasers
Fabrication and characterisation of circularly birefringent helical fibres
Wide-bandwidth and high-power 1.3μm InGaAsP buried crescent lasers with semi-insulating Fe-doped InP current blocking layers
  • Author(s): C.E. Zah ; J.S. Osinski ; S.G. Menocal ; N. Tabatabaie ; T.P. Lee ; A.G. Dentai ; C.A. Burrus
  • Source: Electronics Letters, Volume 23, Issue 1, p. 52 –53
  • DOI:  10.1049/el:19870038
  • Type: Article
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  • p. 52 –53 (2)
    The fabrication and performance of 1.3 μm InGaAsP buried crescent lasers with semi-insulating Fe-doped InP current blocking layers grown by MOVPE are reported. A modulation bandwidth above 8.3GHz has been achieved at room temperature without using a mesa-stripe geometry. CW output power up to 30 mW per facet at 20°C and CW operation up to 95°C have been obtained. The semi-insulating InP layer alone is proved to be an effective current blocking layer.
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Microwave characterisation of 1 μm-gate AI0.48In0.52As/Ga0.47In0.53As/InP MODFETs
  • Author(s): L.F. Palmateer ; P.J. Tasker ; T. Itoh ; A.S. Brown ; G.W. Wicks ; L.F. Eastman
  • Source: Electronics Letters, Volume 23, Issue 1, p. 53 –55
  • DOI:  10.1049/el:19870039
  • Type: Article
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  • p. 53 –55 (3)
    We report microwave characterisation of nominally 1μm-gate AI0.48In0.52As&sol;Ga0.47In0.53As (lattice-matched to InP) modulation-doped field-effect transistors (MODFETs). The AI0.48In0.52As&sol;Ga0.47In0.53As MODFETs have room-temperature extrinsic transconductances as high as 250 mS&sol; mm. A room-temperature unity-current-gain cutoff frequency (fT) of 22 GHz and an fmax of 35 GHz were measured for a 1.2&mu;m-gate MODFET.
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Simple method for measuring hot-electron temperature in GaAs
Practical method of measuring reflection-induced power penalties in single-mode fibre transmission systems
  • Author(s): W.C. Young ; L. Curtis ; N.K. Cheung ; S.J. Wang ; D.S. Burpee
  • Source: Electronics Letters, Volume 23, Issue 1, p. 56 –57
  • DOI:  10.1049/el:19870041
  • Type: Article
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  • p. 56 –57 (2)
    A simple method of measuring power penalties due to reflection effects on semiconductor lasers in single-mode fibre transmission systems has been developed using a dielectric thin-film-coated fibre endface together with a nearly reflection-free variable attenuator. Field measurements indicate that, for some 560Mbit/s systems, power penalties, resulting from a 15.9% reflection, could be as high as 1.9dB.
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Phase-shifted diffraction-grating fabrication using holographic wavefront reconstruction
Narrowband digital voice communications over a meteor burst channel
  • Author(s): J.R. Herman ; C.C. Duggan ; W.I. Thompson ; R.A. Costa ; D.M. Deluca
  • Source: Electronics Letters, Volume 23, Issue 1, p. 59 –60
  • DOI:  10.1049/el:19870043
  • Type: Article
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  • p. 59 –60 (2)
    We report the first successful narrowband digital transmissions of voice messages via meteor trail scatter propagation. A 12-word message, which took 6s to recite, was represented by a compressed data stream of 43 characters and required 86 ms for transmittal over the meteor scatter channel. The experiment used state-of-the-art speech recognition/digitisation equipment, a digital meteor burst communication system and a speech synthesiser.
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