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Online ISSN 1350-911X Print ISSN 0013-5194

Electronics Letters

Volume 23, Issue 18, 27 August 1987

Volumes & issues:

Volume 23, Issue 18

27 August 1987

High-speed all-optical gate switching experiment in a Fabry-Perot semiconductor laser amplifier
Microwave energy scattered off building surfaces shows strong dependence on orientation of city blocks
New polarisation-insensitive detection technique for coherent optical fibre heterodyne communications
Impedance switching effects in GaAs/AlAs barrier structures
  • Author(s): A.C. Campbell ; V.P. Kesan ; G.E. Crook ; C.M. Maziar ; D.P. Neikirk ; B.G. Streetman
  • Source: Electronics Letters, Volume 23, Issue 18, p. 926 –927
  • DOI:  10.1049/el:19870652
  • Type: Article
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  • p. 926 –927 (2)
    AlAs tunnel barriers in MBE-grown GaAs layers have been studied using pulsed and continuous I/V and swept temperature/capacitance measurements. Such layers demonstrate an impedance switching phenomenon which is persistent and repeatable. This impedance switching is manifested by the device as two distinct impedance modes: a high-impedance mode (of the order of 10kΩ at DC for a 0.3 mm dot), and a low-impedance mode (of the order of 10Ω). Such a phenomenon may restrict the operation of some devices, but may lead to other novel applications.
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Power penalty in bit error rate due to limited transmission bandwidth
Theoretical radiation resistance of an isolated slot ring resonator
Characteristic impedance of stripline
  • Author(s): B. Nauwelaers  and  A. van de Capelle
  • Source: Electronics Letters, Volume 23, Issue 18, p. 930 –931
  • DOI:  10.1049/el:19870655
  • Type: Article
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  • p. 930 –931 (2)
    In the letter a simple correction for the influence of the strip thickness on the characteristic impedance of stripline is proposed. This correction is intended for use with Wheeler's formula for characteristic impedance. The thickness correction is independent of strip width and thus has to be calculated only once. The formulas are extremely simple, and can easily be evaluated with a calculator.
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Double-heterojunction bipolar transistors in InP/GaInAs grown by metal organic chemical vapour deposition
8-bit micropower algorithmic A/D convertor
  • Author(s): V. Valencic ; P. Deval ; F. Krummenacher
  • Source: Electronics Letters, Volume 23, Issue 18, p. 932 –933
  • DOI:  10.1049/el:19870657
  • Type: Article
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  • p. 932 –933 (2)
    A switched-capacitor algorithmic A/D convertor is described, in which the amplifier offset compensation is inherent to the circuit structure and the effect of clock-feedthrough is as low as 0.5 mV. Preliminary experimental results, obtained on circuits fabricated using a low-voltage CMOS technology, indicate 8-bit resolution for 15 kHz sampling frequency, with only 350 μW power consumption.
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Improved (conference) public-key distribution system based on matrices
  • Author(s): Yang Yi Xian
  • Source: Electronics Letters, Volume 23, Issue 18, p. 934 –935
  • DOI:  10.1049/el:19870658
  • Type: Article
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  • p. 934 –935 (2)
    In a recent letter we proposed four new public-key distribution systems; however, we have since found that the third system is not secure. In the present letter we first show two attacks which can break the third system we have already proposed, and then give an improved version of this system and its corresponding conference scheme. The new version may be secure. We encourage readers to attack the improved version here and the other three schemes proposed earlier.
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Direct supermode analysis of phase-locked diode laser arrays
AlGaAs/GaAs bipolar transistors with a modulation-doped superlattice emitter
  • Author(s): J.F. Palmier ; A. Sibille ; J.C. Harmand ; J. Dangla
  • Source: Electronics Letters, Volume 23, Issue 18, p. 936 –938
  • DOI:  10.1049/el:19870660
  • Type: Article
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  • p. 936 –938 (3)
    A new emitter-base concept for heterojunction bipolar transistors is proposed and demonstrated. The abrupt or graded emitter-base heterojunction drawbacks are circumvented by means of a modulation-doped stack of ternary compound alternating with binary compound layers. This stack provides efficient barriers to the hole current while preserving good diode characteristics. These concepts are demonstrated by experimental results on small-area devices with a common-emitter gain of ~40 and a collector-emitter voltage offset of ~80mV.
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High-power operation of a transverse-mode stabilised AlGaInp visible light (λL = 683 nm) semiconductor laser
Highly reliable multilevel channel coding system using binary convolutional codes
High-power, wide-bandwidth, 1.55 μm-wavelength GaInAsP/InP distributed feedback laser
Laser power sharing in the subscriber loop
Field patterns of TM0 modes in a shielded dielectric resonator
Low-noise SIS heterodyne receiver at 230 GHz
High-performance guided-wave multi/demultiplexer based on novel design using embedded gradient-index waveguides in glass
  • Author(s): M. Seki ; R. Sugawara ; Y. Hanada ; E. Okuda ; H. Wada ; T. Yamasaki
  • Source: Electronics Letters, Volume 23, Issue 18, p. 948 –949
  • DOI:  10.1049/el:19870667
  • Type: Article
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  • p. 948 –949 (2)
    A guided-wave multi/demultiplexer which comprises low-loss gradient-index ion-exchange waveguides embedded in a glass substrate and optimised interference filters was successfully fabricated. Around − 1dB insertion losses for demultiplexing and less than 2dB insertion losses for multiplexing with sufficient transmission bandwidth as wide as 66 nm were achieved.
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GaInAsP/InP unstable resonator lasers
Wideband monolithic GaAs amplifier using cascodes
Nonlinear vibrations and hysteresis of micromachined silicon resonators designed as frequency-out sensors
  • Author(s): M.V. Andres ; K.W.H. Foulds ; M.J. Tudor
  • Source: Electronics Letters, Volume 23, Issue 18, p. 952 –954
  • DOI:  10.1049/el:19870670
  • Type: Article
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  • p. 952 –954 (3)
    Experimental observation of nonlinear vibrations and hysteresis of micromachined silicon resonators is reported. The experimental results are explained using a simple model in which the restoring force acting in the resonator contains a small cubic term. The effects will impose a limit to the maximum amplitude which can be excited while still maintaining reliability of these devices as frequency-out sensors.
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Long-wavelength PINFET receiver OEIC on a GaAs-on-InP heterostructure
Nonlinear distortion produced by an injection-locked laser
Simple method for detecting water penetration into optical fibre cables
Switched-capacitor neural networks
Measured pulse-stuffing jitter in asynchronous ds-1/sonet multiplexing with and without stuff-threshold modulation circuit
  • Author(s): W.D. Grover ; T.E. Moore ; J.E. McEachern
  • Source: Electronics Letters, Volume 23, Issue 18, p. 959 –961
  • DOI:  10.1049/el:19870675
  • Type: Article
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  • p. 959 –961 (3)
    The letter reports the measurement of pulse-stuffing jitter levels up to 0.2UIrms when an asynchronous DS-1 is transported in the current draft-standard SONET format. We then describe a new circuit technique for jitter suppression which does not require format alteration, and report measured jitter reductions of ll–16dB for asynchronous DS-1/ SONET multiplexing. We offer an explanation as to why jitter is not significantly reduced by recent SONET format rearrangements, and show illustrative jitter spectra demonstrating the operative principle of our jitter reduction circuit.
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Direct interferometric measurement of nonlinear refractive index of optical fibres by crossphase modulation
Optimum fibre parameters of low-loss single-mode optical fibres for use in 1.55μm-wavelength region
  • Author(s): Y. Namihira ; Y. Horiuchi ; M. Kuwazuru ; M. Nunokawa ; Y. Iwamoto
  • Source: Electronics Letters, Volume 23, Issue 18, p. 963 –964
  • DOI:  10.1049/el:19870677
  • Type: Article
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  • p. 963 –964 (2)
    Design considerations are discussed for the structural optimisation of 1.3μm zero-dispersion single-mode fibres for use in the 1.55 μm-wavelength region. The ranges of optimum fibre parameters for mode field diameter 1W and effective cutoff wavelength λce are determined as 2W = 10.5 ± 10 μm and 1.35 μm < λ <, 1.60 μm, respectively. A mean test fibre loss of 0.185 dB/km has been achieved.
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Design of elliptically symmetric two-dimensional FIR filters with arbitrary orientation
Tables of integrals: misprint in a convolution-type integral with Gauss-Laguerre functions
  • Author(s): Chen He-Ming  and  W. Freude
  • Source: Electronics Letters, Volume 23, Issue 18, p. 966 –967
  • DOI:  10.1049/el:19870679
  • Type: Article
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  • p. 966 –967 (2)
    The solution of a convolution-type integral with Gauss-Laguerre functions has turned out to be wrong due to a misprint. So far as we know this error appears in the tables of Gradštein and Ryžik, Magnus et al., Oberhettinger and Prundnikov et al. We did not succeed in proving the correct formula in all generality, but we have demonstrated with four special cases the correct structure of the solution.
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Hydrogen plasma etching of amorphous and microcrystalline silicon
Fast and dense low-power multiple-valued I2L circuit
  • Author(s): Q.P. Chao  and  Z. Tang
  • Source: Electronics Letters, Volume 23, Issue 18, p. 968 –970
  • DOI:  10.1049/el:19870681
  • Type: Article
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  • p. 968 –970 (3)
    A fast and dense low-power multiple-valued I2L circuit that can be made in a standard Schottky process with double-layer metallisation is proposed. The circuit consists of pnp and npn current mirrors. Schottky diodes and a normally operated threshold npn transistor with a merged pnp transistor to clamp the npn transistor and prevent the npn from going too deeply into saturation. Propagation delay times below 1 ns can be obtained.
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Avalanche noise associated with gate current of Si JFET
Implementation of multistage space-switch interconnections via the perfect shuffle
Optimised class-E amplifier with load variation
Crossconnection of wavelength-division-multiplexed high-speed channels
  • Author(s): H. Kobrinski
  • Source: Electronics Letters, Volume 23, Issue 18, p. 974 –976
  • DOI:  10.1049/el:19870685
  • Type: Article
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  • p. 974 –976 (3)
    The letter describes a wavelength-division-multiplexing structure to establish point-to-point connectivity of high-speed channels between network nodes. The information-handling capacity of the network exceeds 1 Tbit/s, which can only be duplicated otherwise by a complete fibre mesh structure. A small-scale experimental system with two transmitting nodes and two receiving nodes, each with two wavelengths, is reported.
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