Online ISSN
1350-911X
Print ISSN
0013-5194
Electronics Letters
Volume 22, Issue 9, 24 April 1986
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Volume 22, Issue 9
24 April 1986
Capacity estimation of cellular mobile radio systems
- Author(s): M. Hata and M. Sakamoto
- Source: Electronics Letters, Volume 22, Issue 9, p. 449 –450
- DOI: 10.1049/el:19860305
- Type: Article
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A capacity estimation procedure for cellular systems is introduced under a condition of concentrated traffic distribution. Comparisons are made of systems with 12.5 kHz and 25 kHz channel spacing to clarify the difference in system capacity for uniform and concentrated traffic distribution conditions. The results show it is necessary to take actual traffic distribution conditions into account in making system capacacity estimations.
Power penalty due to decision-time jitter in optical communication systems
- Author(s): G.P. Agrawal and T.M. Shen
- Source: Electronics Letters, Volume 22, Issue 9, p. 450 –451
- DOI: 10.1049/el:19860306
- Type: Article
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The effect of decision-time jitter on the performance of optical communication systems is evaluated theoretically. The jitter-induced noise and the associated power penalty are calculated for the uniform and Gaussian distributions of the time jitter. The results suggest that the time jitter should be ≲(4B)−1 to keep the power penalty below 1 dB for a light-wave system operating at a bit rate B.
DC fibre-optic accelerometer with sub-μg sensitivity
- Author(s): F. Bucholtz ; A.D. Kersey ; A. Dandridge
- Source: Electronics Letters, Volume 22, Issue 9, p. 451 –452
- DOI: 10.1049/el:19860307
- Type: Article
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We describe a fibre-optic accelerometer, based on the technique of nonlinear displacement-to-strain conversion (NDSC), suitable for use at DC and low frequencies. The sensor exhibits a minimum detectable acceleration of less than 1 μg RMS (g = 9.8 m/s2) at 0.5 Hz and a linear dynamic range greater than 106.
Characterisation of frequency response of 1.5 μm InGaAsP DFB laser diode and InGaAs PIN photodiode by heterodyne measurement technique
- Author(s): R. Schimpe ; J.E. Bowers ; T.L. Koch
- Source: Electronics Letters, Volume 22, Issue 9, p. 453 –454
- DOI: 10.1049/el:19860308
- Type: Article
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The frequency response of an InGaAs PIN photodiode and the ratio of the frequency modulation (FM) index to the intensity modulation (IM) index of a 1.5 μm InGaAsP vapour-phase-transported DFB laser diode have been measured by an optical heterodyne measurement technique. From the response of the photodiode to the laser radiation beat frequency, a 20 GHz detector bandwidth is determined. The ratio of the FM and IM indices at 3 mW laser output power per facet decreases from 60 at 100 MHz modulation frequency to 3.3 above 2 GHz.
Integrated laser/phototransistor optoelectronic switching device by organometallic vapour phase epitaxy
- Author(s): C.F. Schaus ; J.R. Shealy ; F.E. Najjar ; F.L. Eastman
- Source: Electronics Letters, Volume 22, Issue 9, p. 454 –456
- DOI: 10.1049/el:19860309
- Type: Article
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Computer-controlled organometallic vapour phase epitaxy has been used to optimise AlGaAs/GaAs quantum well lasers and bipolar phototransistors separately. Here the two structures are combined In a single growth to realise a high-performance two-terminal optoelectronic switch. DC I/V characteristics are typical of an npnp structure; however, the feedback mechanism is optical rather than electronic. Threshold switching voltage is determined by the optical input in the range 1.3–23 V and sensitivity is 2.5 V/μW. Output is both optical (laser) and electrical current. Gain is provided by the phototransistor and optical feedback and exceeds 104. Switching speed is determined to be less than 1 ns.
Dual-frequency modified C/V technique
- Author(s): L.F. Lønnum and J.S. Johannessen
- Source: Electronics Letters, Volume 22, Issue 9, p. 456 –457
- DOI: 10.1049/el:19860310
- Type: Article
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A technique is presented which allows the carrier density profile to be obtained from very leaky Schottky-barrier devices. Measurements of the impedance as a function, of applied reverse voltage for two frequencies are combined to yield the depletion layer capacitance, along with expressions for the parasitic series and shunt resistances. The technique is easily extendable to MOS devices.
Dynamic intensity noise and related gain compression phenomena for a GaAlAs BH laser
- Author(s): W.I. Way and P.L. Liu
- Source: Electronics Letters, Volume 22, Issue 9, p. 457 –459
- DOI: 10.1049/el:19860311
- Type: Article
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The frequency distribution of relative intensity noise for a GaAlAs BH laser diode is changed significantly by radio frequency carriers above 10 MHz and -5dBm. indicating that gain compression has occurred. For an optical transmission system with multiple inputs, weak RF carriers may be severely suppressed in the presence of other strong RF carriers owing to the gain compression effect.
Generation of simple limit cycles in digital circuits
- Author(s): E.C. Tan
- Source: Electronics Letters, Volume 22, Issue 9, p. 459 –560
- DOI: 10.1049/el:19860312
- Type: Article
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Readily predictable elementary limit cycles can be generated using a first-order digital circuit subject to magnitude truncation that is excited by constant inputs. Conditions for sustaining specific length and magnitude of limit cycles are given. The results will be useful for educational demonstrations and for hardware testing of certain digital circuits.
Second harmonic generation from LB superlattices containing two active components
- Author(s): D.B. Neal ; M.C. Petty ; G.G. Roberts ; M.M. Ahmad ; W.J. Feast ; I.R. Girling ; N.A. Cade ; P.V. Kolinsky ; I.R. Peterson
- Source: Electronics Letters, Volume 22, Issue 9, p. 460 –462
- DOI: 10.1049/el:19860313
- Type: Article
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Second harmonic generation has been observed from Langmuir-Blodgett multilayer arrays containing two active components. Both materials were based on long chain donor-acceptor dye compounds, but were designed with the donor-acceptor groups in opposite senses with respect to the hydrocarbon chain. Preliminary results indicate a significant enhancement of the second-order polarisability for this type of supermolecular array.
High-efficiency operation of phase-adjusted DFB laser by asymmetric structure
- Author(s): Y. Kotai ; H. Soda ; K. Wakao ; H. Ishikawa ; S. Yamakoshi ; H. Imai
- Source: Electronics Letters, Volume 22, Issue 9, p. 462 –463
- DOI: 10.1049/el:19860314
- Type: Article
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–463
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Differential efficiency has been increased by 50% in a phase-adjusted DFB laser by the introduction of an asymmetric structure. The problem of mode degeneracy in DFB lasers has been resolved without penalty on efficiency and output power.
Performance of star microstrip as a linearly and circularly polarised TM2,1 mode radiator
- Author(s): K. Parasnis ; L. Shafai ; G. Kumar
- Source: Electronics Letters, Volume 22, Issue 9, p. 463 –464
- DOI: 10.1049/el:19860315
- Type: Article
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–464
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A star-shaped microstrip antenna is investigated numerically which, owing to its geometry, excites higher-order modes with a single input. Its performance as a linearly and circularly polarised radiator is investigated and the dependence of the resonant frequency on its shape is determined.
High-power and high-efficiency phased array lasers grown by a two-step metalorganic chemical vapour deposition
- Author(s): D.F. Welch ; P.S. Cross ; D.R. Scifres ; G. Harnagel ; M. Cardinal ; W. Streifer ; R.D. Burnham
- Source: Electronics Letters, Volume 22, Issue 9, p. 464 –466
- DOI: 10.1049/el:19860316
- Type: Article
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–466
(3)
Phased array lasers which emit 1.3 W CW output were fabricated using a two-step metalorganic chemical vapour deposition process were developed. The differential efliciency at 100 mW is 78% and the total efficiency at the catastrophic limit is 39%.
Using non-Fourier techniques in signal processing for AN FMCW hidden-object detection radar
- Author(s): T.F. Liau ; A.G. Carr ; L.G. Cuthbert
- Source: Electronics Letters, Volume 22, Issue 9, p. 466 –467
- DOI: 10.1049/el:19860317
- Type: Article
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–467
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The letter describes the application of non-Fourier methods of moving between the time and frequency domains in the signal processing associated with an FMCW radar used for detecting hidden objects. It is shown that, compared with earlier techniques, the target returns are sharper and that there is less of a problem resulting from spectral sidelobes.
Formation of multilayer Si3N4 structures by nitrogen ion implantation
- Author(s): K.J. Reeson ; P.L.F. Hemment ; R.F. Peart ; C.D. Meekison ; G.R. Booker ; J. Davis
- Source: Electronics Letters, Volume 22, Issue 9, p. 467 –469
- DOI: 10.1049/el:19860318
- Type: Article
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–469
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Buried double-layered nitride structures in single-crystal (100) silicon have been produced by the implantation of doses of 0.75 × 1018 N+ cm-2 at 350 keV and 200 keV, respectively. Observations by RBS and channelling on the structure before and after high-temperature annealing and by TEM after annealing have shown two distinct buried nitride layers of different thicknesses. The mechanisms responsible for the formation of such a structure are discussed, together with possible routes for nitrogen migration. The processing conditions to form multilayer structures which are suitable for device applications are proposed.
Wide-range directional LDV employing modulated semiconductor laser source
- Author(s): J.E. Schrøder and C.J. Nielsen
- Source: Electronics Letters, Volume 22, Issue 9, p. 469 –470
- DOI: 10.1049/el:19860319
- Type: Article
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p.
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–470
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A laser Doppler velocimeter (LDV) based on a semiconductor laser is described. Information on the direction of flow is obtained by applying a single-sideband technique using direct modulation of the laser diode. A measuring range of 8.4 MHz is reached with this technique, where the nonideal FM properties of the semiconductor laser are dealt with by an equalisation of the modulation current.
Improved sequential linear prediction by selective time-domain coefficient extraction
- Author(s): G.J. Freij and B.M.G. Cheetham
- Source: Electronics Letters, Volume 22, Issue 9, p. 470 –472
- DOI: 10.1049/el:19860320
- Type: Article
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p.
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–472
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For voiced speech, LPC coefficients obtained from sequential adaptation techniques are maximally perturbed roughly at the instant of glottal closure. Coefficient extraction at or immediately beyond this instant results in a poor vocal tract model estimate. A method is described to enhance the accuracy of the estimate by selecting coefficient vectors based on their time-domain convergence.
Planar VPE infill 1.3 μm integrated laser/monitor photodiode with CARIBE etched facets
- Author(s): P.J. Williams ; A.P. Webb ; I.H. Goodridge ; A.C. Carter
- Source: Electronics Letters, Volume 22, Issue 9, p. 472 –473
- DOI: 10.1049/el:19860321
- Type: Article
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We report the preparation of a novel, planar VPE infill 1.3 μm laser featuring an integrated monitor photodiode. The rear laser and front photodiode facets were formed by chemically assisted reactive ion beam etching (CARIBE). Threshold currents were as low as 17 mA with efficiencies up to 17% per facet. The laser/monitor photodiode sensitivity was ~5 μA/mW.
Suppression of stimulated Brillouin scattering in a single-mode fibre by an acousto-optic modulator
- Author(s): M. Tsubokawa ; S. Seikai ; T. Nakashima ; N. Shibata
- Source: Electronics Letters, Volume 22, Issue 9, p. 473 –475
- DOI: 10.1049/el:19860322
- Type: Article
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Stimulated Brillouin scattering in a single-mode optical fibre was fully suppressed by launching two frequency beams passed through an acousto-optic modulator. A suppression ratio up to 30 dB was obtained for a frequency difference of 500 MHz between two beams. The experimental result agrees with the theoretical estimation. The method has great advantages for optical fibre systems using a continuous high-power laser source.
Anomalous length dependence of threshold for thin quantum well AlGaAs diode lasers
- Author(s): P.S. Zory ; A.R. Reisinger ; L.J. Mawst ; G. Costrini ; C.A. Zmudzinski ; M.A. Emanuel ; M.E. Givens ; J.J. Coleman
- Source: Electronics Letters, Volume 22, Issue 9, p. 475 –476
- DOI: 10.1049/el:19860323
- Type: Article
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The threshold current in conventional semiconductor diode lasers decreases linearly with decreasing cavity length. We have found that for AlGaAs diode lasers fabricated from very thin active layer material, the threshold current can be essentially constant over a wide range of cavity lengths. At short cavity lengths, threshold increases dramatically. This anaomalous behaviour is attributed to physical mechanisms which become important when active layer threshold gain requirements become unusually high.
New way of plotting current/voltage characteristics of Schottky diodes
- Author(s): M. Missous and E.H. Rhoderick
- Source: Electronics Letters, Volume 22, Issue 9, p. 477 –478
- DOI: 10.1049/el:19860324
- Type: Article
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It is pointed out that the empirical diode relationship I = I0 exp (qV/nkT){1 - exp (-qV/kT)} has the property that a plot of log [I/{1 - exp (-qV/kT)}] against V should be linear for all values of V, including reverse voltages. This equation has been tested by making such a plot for an Al/GaAs Schottky diode made by MBE. The plot is linear over the entire range from +0.5 V to - 1.0 V, with n = 1.01.
Design technique to reduce effects of tidal variations on an ILS glide slope system
- Author(s): V. Ungvichian
- Source: Electronics Letters, Volume 22, Issue 9, p. 478 –479
- DOI: 10.1049/el:19860325
- Type: Article
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A 330 MHz null-reference glide slope system design technique to minimise the reflecting surface variations is introduced. The runaway approach end of the site selected to test this design is over an ocean. Since the ocean forms part of the reflecting surface of the glide slope system, the tidal variations will affect the glide angle. The uniform theory of diffraction is used in the analysis and calculations are made for five tidal levels from high to low tide. The results of the simulations indicate that a glide path angle exists which is least sensitive to the tidal variations. Furthermore, this optimum angle provides smooth glide path structure.
Two-way transmission using electro-optical modulator
- Author(s): J.K. Wheeler ; J. Ocenasek ; P.P. Bohn
- Source: Electronics Letters, Volume 22, Issue 9, p. 479 –481
- DOI: 10.1049/el:19860326
- Type: Article
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A new method of simultaneous two-way transmission over one fibre is described. Only one optical source is required when an electro-optical modulator is used. In addition, the experimental results of a version of this system operating over 12 km of single-mode fibre are presented.
Integrated travelling-wave antenna for nonradiative dielectric waveguide
- Author(s): J.A.G. Malherbe
- Source: Electronics Letters, Volume 22, Issue 9, p. 481 –482
- DOI: 10.1049/el:19860327
- Type: Article
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A travelling-wave antenna for integrated use in nonradiative dielectric waveguide is described. The antenna is constructed by cutting a longitudinal slot in the waveguide side wall. Results are presented showing the comparison between measured and calculated data.
Edge extraction by a class of second-order nonlinear filters
- Author(s): G. Ramponi
- Source: Electronics Letters, Volume 22, Issue 9, p. 482 –484
- DOI: 10.1049/el:19860328
- Type: Article
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The application of a class of nonlinear 2-D digital filters, based on the discrete Volterra series, as edge detectors is considered. Independence on edge orientation is achieved by the use of symmetry conditions on the coefficients. Two examples are presented.
Dry etching characteristics of LiNbO3
- Author(s): P.S. Chung ; C.M. Horwitz ; W.L. Guo
- Source: Electronics Letters, Volume 22, Issue 9, p. 484 –485
- DOI: 10.1049/el:19860329
- Type: Article
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We report a high etch selectivity of LiNbO3 with respect to Cr of 10:1 using the planar sputter etching technique in CF4 plasma. The etch rate can be further increased by an order of magnitude using an enhanced-discharge hollow-cathode sputter etching system.
Broadband lumped equivalent circuit for shunt-connected radial stub
- Author(s): F. Giannini and C. Paoloni
- Source: Electronics Letters, Volume 22, Issue 9, p. 485 –487
- DOI: 10.1049/el:19860330
- Type: Article
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A lumped equivalent circuit for a radial stub is given that characterises the electrical behaviour of the component in terms of 'resonant frequency' and impedance level. The broad bandwidth validity of the proposed approach is also demonstrated.
Low-noise microwave HIFET fabricated using photolithography and MOCVD
- Author(s): K. Tanaka ; H. Takakuwa ; F. Nakamura ; Y. Mori ; Y. Kato
- Source: Electronics Letters, Volume 22, Issue 9, p. 487 –488
- DOI: 10.1049/el:19860331
- Type: Article
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Low-noise HIFETs with AlGaAs/GaAs heterostructures have been developed using MOCVD and optical photolithography. HIFETs with less than 0.5 μm-long and 200 μm wide gates show a noise figure of 0.87 dB with an associated gain of 12.5 dB at 12 GHz, and a DC tranconductance of 280 mS/mm
Fibre Brillouin amplifier with electronically controlled bandwidth
- Author(s): N.A. Olsson and J.P. Van Der Ziel
- Source: Electronics Letters, Volume 22, Issue 9, p. 488 –490
- DOI: 10.1049/el:19860332
- Type: Article
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A novel technique for controlling the bandwidth of a fibre Brillouin amplifier is proposed and demonstrated. By using a frequency-modulated pump laser, in this case an external-cavity semiconductor laser, we have increased the bandwidth of useful gain by more than one order of magnitude. The scheme can be used to tailor the gain characteristics of fibre Brillouin amplifiers to
Equidistant linear phase functions with improved selectivity and stopband attenuation
- Author(s): M.P. Barros and L.F. Lind
- Source: Electronics Letters, Volume 22, Issue 9, p. 490 –491
- DOI: 10.1049/el:19860333
- Type: Article
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The letter describes a technique to manipulate the parameters governing Rhodes equidistant linear phase functions, so that two finite transmission-zero pairs can appear on the imaginary axis of the complex plane. An increase in the amplitude selectivity and stopband attenuation occurs, with little degradation of the passband ripple and group delay, especially for higher-degree transfer functions.
High-speed and high-coding-gain Viterbi decoder with low power consumption employing SST (scarce state transition) scheme
- Author(s): S. Kubota ; K. Ohtani ; S. Kato
- Source: Electronics Letters, Volume 22, Issue 9, p. 491 –493
- DOI: 10.1049/el:19860334
- Type: Article
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A high-speed and high-coding-gain Viterbi decoder LSI with low power consumption is developed using CMOS master-slice LSI. By employment of the SST (scarce state transition) scheme, this LSI achieves a good Pe performance (4.2 dB net coding gain at Pe = 1 × 10-6), drastic reduction of power consumption and number of gates with low development costs.
As- and Ga-implanted silicon camel diodes
- Author(s): L. Vescan ; J. Splettstößer ; H. Beneking
- Source: Electronics Letters, Volume 22, Issue 9, p. 493 –494
- DOI: 10.1049/el:19860335
- Type: Article
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The fabrication of Si-camel diodes using low-energy implantation of As and Ga into preamorphised substrates is described. By changing the Ga ion energy between 24 and 33 keV, it was possible to vary the barrier height of the diodes in the range 0.33 eV to 0.63 eV.
Coherent backscatter-induced drift in phase-modulated optical fibre gyroscopes
- Author(s): I.P. Giles ; J. Mackintosh ; J. McMillan ; B. Culshaw
- Source: Electronics Letters, Volume 22, Issue 9, p. 494 –496
- DOI: 10.1049/el:19860336
- Type: Article
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The rotation rate measurement error produced by back-scatter from a partially coherent source has been investigated. The level of error introduced is shown to be dependent on the phase-modulation frequency. Operation at the correct frequency completely eliminates the coherent backscatter-induced errors. Taking into consideration realistic modulator stability conditions a source with a coherence length of tens of centimetres is feasible in an inertial grade, phase-modulated system.
Closed-tube diffusion of silicon in GaAs from sputtered silicon film
- Author(s): E. Omura ; X.S. Wu ; G.A. Vawter ; L. Coldren ; E. Hu ; J.L. Merz
- Source: Electronics Letters, Volume 22, Issue 9, p. 496 –498
- DOI: 10.1049/el:19860337
- Type: Article
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Silicon diffusion into GaAs from a sputtered film in a closed ampoule is described. Excess arsenic pressure is required in the ampoule for a successful diffusion. The relationship between junction depth and the diffusion coefficient has been theoretically derived and the activation energy of the Si-Si pair diffusion coefficient has been obtained from that relation.
Method for the detection of small changes in the sampling rate of a data acquisition system
- Author(s): J. Crowe
- Source: Electronics Letters, Volume 22, Issue 9, p. 498 –499
- DOI: 10.1049/el:19860338
- Type: Article
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A means of detecting small changes in either the sampling rate of a data acquisition system or the frequency of a sinusoidal signal is described. The method is based on the fact that when a sinusoidal signal is sampled at less than twice its frequency then 'aliasing' occurs.
Gate propagation delay and logic timing of GaAs integrated circuits measured by electro-optic sampling
- Author(s): M.J.W. Rodwell ; K.J. Weingarten ; J.L. Freeman ; D.M. Bloom
- Source: Electronics Letters, Volume 22, Issue 9, p. 499 –501
- DOI: 10.1049/el:19860339
- Type: Article
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We report techniques for measuring internal switching delays of GaAs digital integrated circuits by electro-optic sampling. Circuit propagation delays of 15 ps are measured. A new phase modulation technique which allows testing of sequential logic is demonstrated with the measurement of a 2·7 GHz 8-phase clock generator.
High-speed response characteristics of GaAs optoelectronic integrated receivers
- Author(s): H. Hamaguchi ; M. Makiuchi ; O. Wada
- Source: Electronics Letters, Volume 22, Issue 9, p. 501 –502
- DOI: 10.1049/el:19860340
- Type: Article
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The letter focuses on the measurement of pulse response characteristics of an optoelectronic integrated receiver in which a GaAs metal-semiconductor-metal (MSM) photodiode and a GaAs field-effect transistor amplifier are monolithically integrated on a GaAs substrate. The maximum parasitic capacitance was found to be negligible for the total capacitance at the amplifier input. We also verified a fast response of this receiver showing a rise time of 300 ps.
Ka-band monolithic gain control amplifier
- Author(s): J. Geddes ; V. Sokolov ; T. Contolatis
- Source: Electronics Letters, Volume 22, Issue 9, p. 503 –504
- DOI: 10.1049/el:19860341
- Type: Article
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A monolithic gain control amplifier for Ka-band has been developed based on 0.25 μm-gate-length dual-gate FETs fabricated on ion-implanted material. A single-stage monolithic amplifier gives a gain of 6 dB at 31 GHz including fixture losses with a gain control range of over 20 dB. The device and IC design and fabrication are described.
Erratum: Improved systolic array for linear discriminant function classifier
- Author(s): C.-L. Wang ; C.-H. Wei ; S.-H. Chen
- Source: Electronics Letters, Volume 22, Issue 9, page: 504 –504
- DOI: 10.1049/el:19860342
- Type: Article
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Erratum: Fully differential bilinear integrator for SC filters
- Author(s): K. Chen and S. Eriksson
- Source: Electronics Letters, Volume 22, Issue 9, page: 504 –504
- DOI: 10.1049/el:19860343
- Type: Article
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54 Gbit/s OOK transmission using single-mode VCSEL up to 2.2 km MMF
- Author(s): G. Stepniak ; A. Lewandowski ; J.R. Kropp ; N.N. Ledentsov ; V.A. Shchukin ; N. Ledentsov Jr. ; G. Schaefer ; M. Agustin ; J.P. Turkiewicz
- Type: Article