Online ISSN
1350-911X
Print ISSN
0013-5194
Electronics Letters
Volume 22, Issue 6, 13 March 1986
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Volume 22, Issue 6
13 March 1986
In-phase emission from index-guided laser array up to 400 mW
- Author(s): D.F. Welch ; P. Cross ; D. Scifres ; W. Streifer ; R.D. Burnham
- Source: Electronics Letters, Volume 22, Issue 6, p. 293 –294
- DOI: 10.1049/el:19860199
- Type: Article
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–294
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Phased-array lasers with real-refractive-index waveguides have been grown by metalorganic chemical vapour deposition. The index guides are coupled via ‘Y’-type coupling regions and the laser array emits with all elements in phase. Powers of over 400 mW are obtained with no indication of a change in the far-field pattern.
Differential pass transistor logic in CMOS technology
- Author(s): A.S. Shubat ; J.A. Pretorius ; C.A.T. Salama
- Source: Electronics Letters, Volume 22, Issue 6, p. 294 –295
- DOI: 10.1049/el:19860200
- Type: Article
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–295
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Differential pass transistor logic is described in the letter. This configuration results in better silicon area efficiency and higher speed of operation than conventional CMOS pass transistor logic.
Novel finite-element formulation without any spurious solutions for dielectric waveguides
- Author(s): K. Hayata ; M. Koshiba ; M. Eguchi ; M. Suzuki
- Source: Electronics Letters, Volume 22, Issue 6, p. 295 –296
- DOI: 10.1049/el:19860201
- Type: Article
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–296
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A novel finite-element method for the analysis of dielectric waveguide problems is formulated using the transverse magnetic-field component. In this approach, the relation | H = 0 is satisfied and the spurious nonphysical solutions are completely eliminated in the whole region of propagation diagram.
Analysis of dielectric rectangular waveguide by modified effective-index method
- Author(s): C.M. Kim ; B.G. Jung ; C.W. Lee
- Source: Electronics Letters, Volume 22, Issue 6, p. 296 –298
- DOI: 10.1049/el:19860202
- Type: Article
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For dielectric rectangular waveguides an approximate analysis by the modified effective-index method is presented. The results of this method are compared with those of the effective-index method. Our results are generally in good agreement with results of other rigorous approximate analyses.
Analysis of fin-line structure containing magnetised ferrite slab smaller than height of waveguide
- Author(s): D. Guan and R. Hoffmann
- Source: Electronics Letters, Volume 22, Issue 6, p. 298 –299
- DOI: 10.1049/el:19860203
- Type: Article
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An analysis has been carried out for a fin-line structure containing a small ferrite slab magnetised parallel to its broad side. The method is based on a mode-matching procedure and leads to an infinite set of homogeneous linear equations which is used for numerical solution. Convergence of the propagation constant is shown by numerical examples. Computed dispersion diagrams are given and compared with those of other authors.
Ion implantation of Si in semi-insulating In0.53Ga0.47As:Fe
- Author(s): M.V. Rao and W. Kruppa
- Source: Electronics Letters, Volume 22, Issue 6, p. 299 –301
- DOI: 10.1049/el:19860204
- Type: Article
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–301
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Ion implantation of Si in semi-insulating In0.53Ga0.47As:Fe was discussed. Electrical activation of more than 100%, a broad implant profile and an average electron mobility of 3000 cm2/Vs are observed in layers implanted with a dose of 2 × 1013 cm−2 at 260 keV and annealed at 670°C for 15 min. The results of photoluminescence measurements are also presented.
All-fibre SAW sensor with frequency tuning capability
- Author(s): M. Vaez Iravani
- Source: Electronics Letters, Volume 22, Issue 6, p. 301 –302
- DOI: 10.1049/el:19860205
- Type: Article
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A new sensor for detecting surface acoustic waves (SAWs) is presented. The system uses single-mode optical fibres throughout, and requires only one 3 dB directional coupler. The sensor is tunable to acoustic frequencies above 8 MHz. The new system can be realised in a particularly compact form, and could form the basis of a miniature instrument.
Photon-counting optical time-domain reflectometer using a planar InGaAsP avalanche detector
- Author(s): C.G. Bethea ; B.F. Levine ; L. Marchut ; V.D. Mattera ; L.J. Peticolas
- Source: Electronics Letters, Volume 22, Issue 6, p. 302 –303
- DOI: 10.1049/el:19860206
- Type: Article
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We demonstrate the first room-temperature photon-counting optical time-domain reflectometer, which uses a planar InGaAsP avalanche photodiode. Using a 1.3 μm semiconductor laser source we achieve a one-way loss sensitivity of 20 dB.
Discrete ñ-distribution for difference patterns
- Author(s): D.A. McNamara
- Source: Electronics Letters, Volume 22, Issue 6, p. 303 –304
- DOI: 10.1049/el:19860207
- Type: Article
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–304
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The equivalent of a Bayliss pattern for continuous apertures is developed for discrete arrays by the correct shifting of Zolotarev array pattern zeros.
Generalised coupled-mode equations and their applications to fibre couplers
- Author(s): Jing-Ren Qian
- Source: Electronics Letters, Volume 22, Issue 6, p. 304 –306
- DOI: 10.1049/el:19860208
- Type: Article
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–306
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Generalised coupled-mode equations for two or more coupled weakly guiding fibres are presented, when the fibres are not well separated. These equations are applied to studying fibre couplers. Compared with the results derived from previous coupled-mode equations, our results are in better agreement with those calculated rigorously by a numerical method.
Effect of varactor Q-factor on tuning sensitivity of microwave oscillators, including reverse tuning
- Author(s): N.C. Martin and B.J. Downing
- Source: Electronics Letters, Volume 22, Issue 6, p. 306 –307
- DOI: 10.1049/el:19860209
- Type: Article
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It is shown how the effect of resistive losses in a varactor diode can drastically affect the tuning characteristics of millimetre-wave oscillators and can even cause the oscillator to tune in the reverse direction.
Improved instrumental accuracy for microwave electronic distance-measuring instruments
- Author(s): B.J. Downing
- Source: Electronics Letters, Volume 22, Issue 6, p. 307 –308
- DOI: 10.1049/el:19860210
- Type: Article
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–308
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The measurement centre of microwave electronic distance-measuring instruments (EDMIs) is affected by antenna VSWR in the transmit plane. This results in the measuring centre of the instrument changing with temperature as the frequency of the microwave transmitter source changes. A new technique is described which virtually eliminates this source of error.
Drawing condition dependence of hydrogen-induced loss in optical flbres
- Author(s): H. Hanafusa ; Y. Hibino ; F. Yamamoto
- Source: Electronics Letters, Volume 22, Issue 6, p. 308 –309
- DOI: 10.1049/el:19860211
- Type: Article
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–309
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Hydrogen-induced loss in the hydroxyl absorption band is found to be reduced by accelerating the drawing speed and by depressing the furnace temperature. By analysing the thermodynamic behaviour of defects during the drawing process, sites reactive with hydrogen causing this loss are shown to be drawing-induced defects.
Low-loss, broadband Ti:LiNbO3 waveguide phase modulators for coherent systems
- Author(s): R.C. Alferness ; L.L. Buhl ; M.D. Divino ; S.K. Korotky ; L.W. Stulz
- Source: Electronics Letters, Volume 22, Issue 6, p. 309 –310
- DOI: 10.1049/el:19860212
- Type: Article
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–310
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We report the design, fabrication and performance of a fibrepigtailed, broadband travelling-wave X-cut Ti:LiNbO3 phase modulator for λ = 1.55 μm with 1.8 dB total insertion loss and 8 V modulation voltage.
High-power operation of a ridge-waveguide AlGaAs/GaAs distributed feedback laser
- Author(s): S. Noda ; K. Kojima ; K. Mitsunaga ; K. Kyuma ; K. Hamanaka ; T. Nakayama
- Source: Electronics Letters, Volume 22, Issue 6, p. 310 –312
- DOI: 10.1049/el:19860213
- Type: Article
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–312
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We report high-power continuous-wave operation of a ridge-waveguide AlGaAs/GaAs distributed feedback laser as high as 40 mW. It was realised by an appropriate design of a ridge structure and by facet coatings.
Dynamic spectral width of an InGaAsP/InP electroabsorption light modulator under high-frequency large-signal modulation
- Author(s): M. Suzuki ; Y. Noda ; Y. Kushiro ; S. Akiba
- Source: Electronics Letters, Volume 22, Issue 6, p. 312 –313
- DOI: 10.1049/el:19860214
- Type: Article
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The first measurements of dynamic spectra of an InGaAsP/InP electroabsorption light modulator under high-frequency large-signal modulation are reported. A spectral broadening factor α was determined from the relative sideband strength to the carrier, and it decreased with increasing operating electric field in the modulator. The estimated α-value for full modulation was |α| = 2.3, which can be reduced by designing a modulator to give a more effective change of electro-absorption.
GaInAs junction FET with InP buffer layer prepared by selective ion implantation of Be and rapid thermal annealing
- Author(s): J. Selders ; H.J. Wachs ; H. Jürgensen
- Source: Electronics Letters, Volume 22, Issue 6, p. 313 –315
- DOI: 10.1049/el:19860215
- Type: Article
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–315
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GaInAs JFETs were fabricated on VPE-grown GaInAs layers. The pn junctions have been realised with Be ion implantation and rapid thermal annealing. The devices show a high transconductance of 130 mS/mm and an electron saturation velocity of 1.8 × 107 cm/s. Channel mobilities measured at the complete device are as high as 6800 cm2/Vs. These excellent device properties are due to the use of an undoped InP buffer layer which avoids the diffusion of Fe from the substrate into the active layer. The data were supported by S-parameter measurements which gave a frequency limit of 20 GHz for gate dimensions of 1.6 by 200 μm2.
Collector-top GaAs/AlGaAs heterojunction bipolar transistors for high-speed digital ICs
- Author(s): K. Morizuka ; T. Nozu ; K. Tsuda ; M. Azuma
- Source: Electronics Letters, Volume 22, Issue 6, p. 315 –316
- DOI: 10.1049/el:19860216
- Type: Article
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GaAs/AlGaAs collector-top heterojunction bipolar transistors with magnesium and phosphorus double-implanted external bases were fabricated. A cutoff frequency of 17 GHz and a gate delay time of 63 ps for DCTL were obtained. These results indicate the potential of collector-top HBTs for high-speed ICs.
Time-domain analysis of an array of straight-wire coupled antennas
- Author(s): R. Gomez Martin ; J.A. Morente ; A. Salinas
- Source: Electronics Letters, Volume 22, Issue 6, p. 316 –318
- DOI: 10.1049/el:19860217
- Type: Article
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The current distribution and the frequency dependence of self and mutual impedances of an array of straight-wire coupled antennas are calculated by a numerical method in the time domain. The antennas are excited by a time-varying Gaussian pulse. The method can easily be extended to study arrays of nonlinear loaded antennas.
Low-loss joints between dissimilar fibres by tapering fusion splices
- Author(s): D.B. Mortimore and J.V. Wright
- Source: Electronics Letters, Volume 22, Issue 6, p. 318 –319
- DOI: 10.1049/el:19860218
- Type: Article
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p.
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–319
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A technique is reported for reducing the splice loss between dissimilar or similar fibres. The technique involves tapering a fusion splice to produce a mode transformer which converts the fundamental mode of one fibre to that of the other with negligible loss. Results of theoretical calculations are presented which show the fundamental mode field shape at the splice junction and the estimated joint loss between two dissimilar fibres as a function of the splice diameter. Initial experiments are reported which have achieved splice loss reductions from 1.5 dB to 0.56 dB and 0.7 dB to 0.15 dB between dissimilar and similar fibres, respectively, at 1.3 μm.
Wavelength dependence of fused couplers
- Author(s): J.V. Wright
- Source: Electronics Letters, Volume 22, Issue 6, p. 320 –321
- DOI: 10.1049/el:19860219
- Type: Article
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The transmission characteristics of fused couplers are evaluated as a function of the cross-sectional radius and the degree of fusion. The wavelength dependence of the coupling ratio is then examined with a view to minimising the wavelength dependence in wavelength-multiplexed optical networks. The effect of changing the external refractive index is also considered.
Low-loss high-silica single-mode channel waveguides
- Author(s): N. Takato ; M. Yasu ; M. Kawachi
- Source: Electronics Letters, Volume 22, Issue 6, p. 321 –322
- DOI: 10.1049/el:19860220
- Type: Article
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Low-loss high-silica single-mode channel optical waveguides of 0.1 dB/cm have been fabricated on crystal silicon substrates with fibre coupling losses of less than 0.05 dB by flame hydrolysis deposition and reactive ion etching. Directional couplers have also been fabricated with excess loss of 0.5 dB by this waveguide fabrication technique.
Fabrication and characterisation of D-fibres with a range of accurately controlled core/flat distances
- Author(s): C.A. Millar ; B.J. Ainslie ; M.C. Brierley ; S.P. Craig
- Source: Electronics Letters, Volume 22, Issue 6, p. 322 –324
- DOI: 10.1049/el:19860221
- Type: Article
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The fabrication and evaluation of D-fibres, whose optical properties are compatible with standard single-mode fibre designs, is reported. The high tolerances achieved in the process of drawing a tapered preform are shown to be necessary for predicting the transverse coupling behaviour of the fibres.
Printed dipoles electromagnetically coupled to coplanar waveguide for linear or circular polarisation
- Author(s): R.W. Jackson
- Source: Electronics Letters, Volume 22, Issue 6, p. 324 –325
- DOI: 10.1049/el:19860222
- Type: Article
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Two configurations are proposed for feeding printed dipoles with coplanar waveguide transmission lines. The coplanar waveguide feed is printed on a ground plane sandwiched between a high-permittivity substrate and a low-permittivity substrate which supports the antenna. Both linear and circular polarisation can be achieved. Measured results are presented.
Measurement of a very high-speed InGaAs photodiode using electro-optic sampling
- Author(s): A.J. Taylor ; J.M. Wiesenfeld ; R.S. Tucker ; G. Eisenstein ; J.R. Talman ; U. Koren
- Source: Electronics Letters, Volume 22, Issue 6, p. 325 –327
- DOI: 10.1049/el:19860223
- Type: Article
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We demonstrate an eleclro-optic sampling system for the characterisation of very high-speed, long-wavelength photodetectors. The system uses a mode-locked InGaAsP injection laser operating at 1.3 μm as the source of pump and sampling pulses.
Sufficiently side-mode-suppressed high-output-power 1.5 μm DFB lasers
- Author(s): J. Yoshida ; Y. Itaya ; Y. Noguchi ; T. Matsuoka ; Y. Nakano
- Source: Electronics Letters, Volume 22, Issue 6, p. 327 –328
- DOI: 10.1049/el:19860224
- Type: Article
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An antireflection/high-reflection (AR/HR) facet configuration was applied to a 1.5 μm DFB laser diode. As a result, a maximum output power of 45 mW was obtained. The diode was found to have high spectral stability under high-frequency modulation (side-mode suppression ratio > 30 dB). These results show that this configuration is a technique for high-performance DFB laser diodes.
Miniature optical waveguide modulator in AlGaAs/GaAs using carrier depletion
- Author(s): X.S. Wu ; A. Alping ; A. Vawter ; L.A. Coldren
- Source: Electronics Letters, Volume 22, Issue 6, p. 328 –330
- DOI: 10.1049/el:19860225
- Type: Article
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The characteristics of an optical waveguide phase shifter using free-carrier depletion in a reverse-biased double-heterostructure p-n junction are given for the first time. Ridge waveguides were fabricated by liquid-phase epitaxy and wet chemical etching in AlGaAs/GaAs. The largest phase-shifting efficiency (54°/V mm) ever reported in a reverse-biased structure was observed.
Components using fence guide for millimetre-wave applications
- Author(s): K.K. Agarwal and F.J. Tischer
- Source: Electronics Letters, Volume 22, Issue 6, p. 330 –331
- DOI: 10.1049/el:19860226
- Type: Article
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–331
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Feasibility of fence-guide components is examined in the 26–40 GHz band. Results of studies on various bends, tapered terminations, resonators and ring structures are presented. Existence of irregular wave modes and field leakage is investigated. Solid-state devices can be implemented to realise mixers, detectors, oscillators etc. This low-loss guiding structure is particularly suited for realising millimetre-wave integrated front ends.
Switched-capacitor LDI lowpass filters with improved selectivity
- Author(s): H. Baher
- Source: Electronics Letters, Volume 22, Issue 6, p. 331 –332
- DOI: 10.1049/el:19860227
- Type: Article
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Generalised expressions are given for transfer functions of an extensive family of lowpass switched-capacitor LDI ladder filters with optimum equiripple (or maximally flat) passbands and an arbitrary number of transmission zeros at half the sampling frequency. These allow greater flexibility in the design and permit tradeoffs to be made among factors such as sampling frequency, element value spread and dynamic range. The previously studied LDI filters with monotonic stopbands can be recovered as degenerate special cases of the generalised ones presented here.
New transmissive star couplers for full duplex channels
- Author(s): P. Healey and D.W. Faulkner
- Source: Electronics Letters, Volume 22, Issue 6, p. 332 –334
- DOI: 10.1049/el:19860228
- Type: Article
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p.
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The letter describes a new type of optical transmissive star coupler which allows full duplex operation to be achieved with half the transmission channels of conventional transmissive star networks.
Integrated optical frequency modulator for fibre-optic gyroscope using frequency modulation method
- Author(s): H. Shimizu ; R. Ishikawa ; K. Kaede
- Source: Electronics Letters, Volume 22, Issue 6, p. 334 –335
- DOI: 10.1049/el:19860229
- Type: Article
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An integrated optical frequency modulator has been developed for a fibre-optic gyroscope using the frequency modulation method. A low insertion loss of 14 dB, which enables a 10−6 rad/s sensitivity, was obtained by realising low coupling loss between the single-mode fibre and titanium-diffused LiNbO3 slab waveguide.
Deep donor trapping effects on the pulsed characteristics of AlGaAs/GaAs HEMTs
- Author(s): K.R. Hofmann and E. Kohn
- Source: Electronics Letters, Volume 22, Issue 6, p. 335 –337
- DOI: 10.1049/el:19860230
- Type: Article
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It is demonstrated both by experiments and by numerical model calculations that electron capture/emission on deep Si related donors (‘DX centres’) in the AlGaAs can lead to significant changes of the pulsed transfer characteristic of AlGaAs/GaAs high electron mobility transistors (HEMTs) at room temperature compared with the static case.
Wideband frequency response measurement of photodetectors using optical heterodyne detection technique
- Author(s): S. Kawanishi and M. Saruwatari
- Source: Electronics Letters, Volume 22, Issue 6, p. 337 –338
- DOI: 10.1049/el:19860231
- Type: Article
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A novel wideband frequency-response measurement system for photodetectors is demonstrated using the optical heterodyne detection technique. By sweeping the frequency difference of two DFB-LDs with temperature control, a 3 dB bandwidth of 18 GHz of an InGaAs PIN photodiode has been successfully measured.
High-speed high-resolution CMOS voltage comparator
- Author(s): W.T. Ng and C.A.T. Salama
- Source: Electronics Letters, Volume 22, Issue 6, p. 338 –339
- DOI: 10.1049/el:19860232
- Type: Article
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A new CMOS voltage comparator circuit capable of resolving 300 μV has been designed and implemented using a 5 μm CMOS process. Differential signal paths are used to eliminate the residual offset voltage caused by clock feedthrough and the channel charge pumping effect in MOS switches. The regenerative action of the output latch is used to provide high voltage gain and high operating speed. The circuit performance does not depend on any critical device geometries, and consequently the circuit is scalable. If a finer geometry CMOS process were used, still higher resolution and faster operating speed could be expected.
Investigation of linewidth and side-mode suppression for a DBR laser with integrated passive waveguide
- Author(s): P. Meissner and E. Patzak
- Source: Electronics Letters, Volume 22, Issue 6, p. 340 –341
- DOI: 10.1049/el:19860233
- Type: Article
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A semiconductor laser device consisting of an active part monolithically integrated with a passive waveguide and a DBR grating is theoretically investigated. It is shown that for a 2 mm-long device a linewidth below 4 MHz can be achieved. The linewidth does not exceed this value even if the lasing frequency is tuned by several gigahertz. The side-mode suppression remains larger than 30 dB.
High-reflectivity monomode-fibre grating filters
- Author(s): I. Bennion ; D.C.J. Reid ; C.J. Rowe ; W.J. Stewart
- Source: Electronics Letters, Volume 22, Issue 6, p. 341 –343
- DOI: 10.1049/el:19860234
- Type: Article
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The fabrication and characterisation of efficient, narrowband fibre-optic filters utilising surface-relief gratings etched into monomode fibre are described. A device with 92% reflectivity and 1·8 nm bandwidth at 1·3 μm wavelength using a first-order Bragg grating with a high-index overlayer is reported.
New design of thin-film lens
- Author(s): P.J.R. Laybourn and G.C. Righini
- Source: Electronics Letters, Volume 22, Issue 6, p. 343 –345
- DOI: 10.1049/el:19860235
- Type: Article
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A classical method of designing lenses for minimum spherical aberration has been extended and applied to the design of thin-film waveguide lenses. The multielement lenses, with apertures up to f/3, consist entirely of planar structures. Computed performance shows good resolution over a wide range of input angles.
Codes from biquadratic residues
- Author(s): V.K. Bhargava
- Source: Electronics Letters, Volume 22, Issue 6, p. 345 –346
- DOI: 10.1049/el:19860236
- Type: Article
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Following previous work on the development of codes from cubic residues, biquadratic residues have been used with the same algorithm to construct rate 1/2 quasicyclic codes. The first code in this family is majority-logic decodable and is analysed in detail.
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