Online ISSN
1350-911X
Print ISSN
0013-5194
Electronics Letters
Volume 22, Issue 4, 13 February 1986
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Volume 22, Issue 4
13 February 1986
Stable matrix inverse method for array DF using trapezoidal factorisation
- Author(s): D.H. Brandwood
- Source: Electronics Letters, Volume 22, Issue 4, page: 177 –177
- DOI: 10.1049/el:19860123
- Type: Article
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An approach to finding the inverse of the covariance matrix required for DF using maximum-likelihood methods (MLM) is to factorise the matrix into LD (lower triangular-diagonal) form. An alternative factorisation, trapezoidal-diagonal (TD) is outlined which is both more stable and, for a small number of signals, more economical.
Floating substrate effects on speed performance in scaled CMOS/SOS circuits
- Author(s): H. Hatano
- Source: Electronics Letters, Volume 22, Issue 4, p. 177 –179
- DOI: 10.1049/el:19860124
- Type: Article
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–179
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Floating substrate effects on speed degradation in 2 μm SOS circuits have been investigated. It has been found that the drain-substrate capacitive coupling is dominant in highly doped substrate devices, based on experimental results obtained from CMOS ring oscillators. Cycle-time-dependent sense amplifier output transition times have also been explained by this capacitive coupling.
Number of appearances of a synch marker inside a random data block
- Author(s): S. Papastavridis and A. Traganitis
- Source: Electronics Letters, Volume 22, Issue 4, p. 179 –181
- DOI: 10.1049/el:19860125
- Type: Article
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The mean and the variance of the number of the (overlapping) appearances of a synch word inside a random data block is calculated for the two cases: no restrictions on the data and data prefixed with the marker.
All-PANDA-fibre multi/demultiplexer utilising polarisation beat phenomenon in birefringent fibres
- Author(s): K. Okamoto ; T. Morioka ; I. Yokohama ; J. Noda
- Source: Electronics Letters, Volume 22, Issue 4, p. 181 –182
- DOI: 10.1049/el:19860126
- Type: Article
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A new all-PANDA-fibre multi/demultiplexer, which consists of 1.65 m PANDA-fibre wavelength-selective region, fibreoptic polarising beam splitter and fibre polarisers, is demonstrated at 1.53 μm. To show the feasibility of the fibre-optic multi/demultiplexer in wavelength-division multiplexing (WDM), two different spectral components of the multimode laser (δλ = 13.8 Å) were successfully separated, with an extinction ratio of 23 dB and an insertion loss of 1.5 dB.
TE01-mode propagation in a circular guide containing azimuthally magnetised remanent ferrite
- Author(s): K.P. Ivanov and G.N. Georgiev
- Source: Electronics Letters, Volume 22, Issue 4, p. 182 –184
- DOI: 10.1049/el:19860127
- Type: Article
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–184
(3)
A new analytical technique based on Tricomi function formalism is developed and applied to study and interpret the properties of a circular guide, filled with azimuthally magnetised remanent ferrite. The nonreciprocal phase shifting and magnetically controlled cutoff experienced by the TE01 mode in the guide can be used in designing microwave ferrite control components.
Transduction mechanisms in SAW gas sensors
- Author(s): M.S. Nieuwenhuizen ; A.W. Barendsz ; E. Nieuwkoop ; M.J. Vellekoop ; A. Venema
- Source: Electronics Letters, Volume 22, Issue 4, p. 184 –185
- DOI: 10.1049/el:19860128
- Type: Article
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–185
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Experimental results are presented for a surface-acoustic-wave gas sensor. At 150°C a pronounced selectivity towards NO2 was observed. The transduction of a chemical signal (concentration) into a physical signal (SAW phase velocity) is discussed in terms of the effect of mass and conductivity changes on sensor response.
Fast interpolation algorithm using FFT
- Author(s): K.P. Prasad and P. Satyanarayana
- Source: Electronics Letters, Volume 22, Issue 4, p. 185 –187
- DOI: 10.1049/el:19860129
- Type: Article
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–187
(3)
An interpolation algorithm for finite-duration real sequences using the discrete Fourier transform is presented. The proposed method is shown to result in a significant saving of computational labour over the discrete version of the time-domain classical interpolation formula. Estimation of inbetween samples for large sequences is possible within a mean square error of 0.00114 with this method. Some considerations with regard to the computation of FFTs are also discussed.
Reduction of floating substrate effect in thin-film SOI MOSFETs
- Author(s): J.-P. Colinge
- Source: Electronics Letters, Volume 22, Issue 4, p. 187 –188
- DOI: 10.1049/el:19860130
- Type: Article
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–188
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The presence of a floating substrate in SOI transistors gives rise to a decrease of threshold voltage when drain voltage is increased. When the devices are made in a very thin silicon film, the latter is completely depleted when the device is in the 'on' state, and no part of the film can act as a floating substrate. This brings about a dramatic decrease of the so-called 'kink effect'.
Wideband monolithic AGC amplifier for 400 Mbit/s optical repeaters using an advanced Si-bipolar IC technology, SICOS
- Author(s): T. Kinoshita ; K. Yamashita ; M. Maeda ; T. Nakamura
- Source: Electronics Letters, Volume 22, Issue 4, p. 188 –189
- DOI: 10.1049/el:19860131
- Type: Article
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A wideband AGC amplifier is monolithically integrated using an advanced Si-bipolar IC technology, SICOS. The fabricated IC exhibits an 8·4 dB maximum gain, 17 dB variable gain and 1·1 GHz bandwidth. It is shown that the SICOS technology is feasible for developing an equalising amplifier with a 37 dB gain and 700 MHz bandwidth for 400 Mbit/s optical repeaters.
Annealing effect in Si-doped GaAs and AlGaAs layers grown by MBE
- Author(s): T. Ishikawa ; T. Inata ; K. Kondo ; A. Shibatomi
- Source: Electronics Letters, Volume 22, Issue 4, p. 189 –190
- DOI: 10.1049/el:19860132
- Type: Article
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p.
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–190
(2)
The effect of annealing on Si-doped GaAs and Al0·3Ga0·7As layers grown by MBE has been studied. In the heavily doped samples, the donor concentration decreased considerably and the broad luminescence characteristic of the SA centre reported in bulk n-GaAs appeared. The results suggest evidence that annealing converts some of the Si donors into complexes like the SA centre, which does not act as a donor.
Heavily Si-doped InGaAs lattice-matched to InP grown by MBE
- Author(s): T. Fujii ; T. Inata ; K. Ishii ; S. Hiyamizu
- Source: Electronics Letters, Volume 22, Issue 4, p. 191 –192
- DOI: 10.1049/el:19860133
- Type: Article
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–192
(2)
Si-doped InxGa1-xAs layers (x = 0.53) with the highest electron concentrations of 5.0 and 6.1 × 1019 cm-3 have been achieved with the use of low growth temperatures (420 and 370°C) for MBE. Nonalloyed Cr/Au ohmic contacts on these heavily doped InGaAs layers exhibited specific contact resistance as low as 1.7 × 10-8 Ωcm2.
42 km analogue video signal transmission in single-mode fibres using 1.3 μm edge-emitting LEDs
- Author(s): T. Tanifuji ; M. Matsuura ; Y. Yamamoto
- Source: Electronics Letters, Volume 22, Issue 4, p. 192 –193
- DOI: 10.1049/el:19860134
- Type: Article
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–193
(2)
Edge-emitting 1.3 μm LEDs are used to launch -13·7 dBm of average optical power into single-mode fibres. This permits analogue video signal transmission over a distance of 42 km with a loss margin of 5 dB. No degradations of DG, DP or signal-to-noise ratio have been observed.
Planar monolithic integration of a GaAs photoconductor and a GaAs field-effect transistor
- Author(s): D. Decoster ; J.P. Vilcot ; M. Constant ; J. Ramdani ; H. Verriele ; J. Vanbremeersch
- Source: Electronics Letters, Volume 22, Issue 4, p. 193 –195
- DOI: 10.1049/el:19860135
- Type: Article
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–195
(3)
A planar monolithic integrated photoreceiver suitable for 0.8 μm-wavelength optical communication systems has been realised. It consists of a GaAs photoconductor associated with a GaAs FET. The steady state and dynamic gains and the noise properties of the photoconductor and of the integrated circuit have been investigated.
Electrical noise measurements on laser diodes for monitoring of optical feedback and mode hopping
- Author(s): P.A. Andrekson ; P. Andersson ; A. Alping
- Source: Electronics Letters, Volume 22, Issue 4, p. 195 –196
- DOI: 10.1049/el:19860136
- Type: Article
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–196
(2)
By measuring the wideband electrical noise voltage at the diode terminal, several laser characteristics can be monitored entirely without optical equipment. The letter describes the application of electrical noise measurements to the study of longitudinal mode hopping and optical feedback-induced noise from, for example, optical fibres.
Canonic adaptor realisations for wave switched-capacitor filters
- Author(s): J.O. Scanlan and P.J. O'Donovan
- Source: Electronics Letters, Volume 22, Issue 4, p. 197 –198
- DOI: 10.1049/el:19860137
- Type: Article
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–198
(2)
The principles of the design of canonic wave SC adaptors based on parasitic-insensitive voltage storage and subtraction are described. The adaptors may be used in any filter configuration and have a minimum number of operational amplifiers.
Efficient diode-pumped CW and Q-switched single-mode fibre laser
- Author(s): I.M. Jauncey ; J.T. Lin ; L. Reekie ; R.J. Mears
- Source: Electronics Letters, Volume 22, Issue 4, p. 198 –199
- DOI: 10.1049/el:19860138
- Type: Article
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–199
(2)
We report the efficient operation an Nd3+-doped silica single-mode fibre laser pumped by a GaAlAs laser diode. A CW output power in excess of 1 mW at 1.088 μm has been obtained with a slope efficiency of 33%. Q-switched operation of this device is also reported.
In-band least-squares echo canceller
- Author(s): A.D. Fagan and N.M. O'Higgins
- Source: Electronics Letters, Volume 22, Issue 4, p. 199 –200
- DOI: 10.1049/el:19860139
- Type: Article
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199
–200
(2)
A least-squares echo canceller algorithm which exploits the algebraic properties of binary pseudorandom maximal length sequences is applied to an in-band canceller without the requirement for a Hilbert transformer. Its performance is compared with least-mean-squares (LMS) and other least-squares (LS) algorithms.
Microwave field-detecting element based on pyroelectric effect in PVDF
- Author(s): T.M. Lee ; A.P. Anderson ; F.A. Benson
- Source: Electronics Letters, Volume 22, Issue 4, p. 200 –202
- DOI: 10.1049/el:19860140
- Type: Article
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–202
(3)
A microwave field-detecting element based on the pyroelectric effect in polyvinylidene fluoride (PVDF) has been developed. Characterisation of the response of a half-wavelength structure etched on 25 μm PVDF film has been modelled and validated by measurements. The sensitivity, linearity and dynamic range are sufficient for array applications.
Large-area, high-speed PIN detectors in GaAs
- Author(s): D.J. Jackson and D.L. Persechini
- Source: Electronics Letters, Volume 22, Issue 4, p. 202 –203
- DOI: 10.1049/el:19860141
- Type: Article
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p.
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–203
(2)
A large-area, lateral PIN detector which exhibits an 8 GHz bandwidth is reported. This device topology is ideally suited for monolithic integration with IC components.
Novel CMOS Schmitt trigger
- Author(s): M. Steyaert and W. Sansen
- Source: Electronics Letters, Volume 22, Issue 4, p. 203 –204
- DOI: 10.1049/el:19860142
- Type: Article
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p.
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–204
(2)
A novel CMOS Schmitt trigger circuit has been realised, using only five MOS transistors. The circuit always guarantees hysteresis, even with very large process variations. The switching speed of the new Schmitt trigger is higher, compared to previously reported CMOS Schmitt triggers.
Efficient ARQ technique using soft demodulation
- Author(s): G. Benelli
- Source: Electronics Letters, Volume 22, Issue 4, p. 205 –206
- DOI: 10.1049/el:19860143
- Type: Article
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p.
205
–206
(2)
In the letter a new technique for increasing the efficiency of an automatic-repeat-request communication system is described. This technique uses all the received versions of a codeword, and also those versions containing errors. Such a strategy, together with a soft demodulation of each received symbol, is particularly efficient when applied to ARQ schemes in which each block erroneously received is retransmitted many times.
Reliable laboratory transmitter with submegahertz linewidth
- Author(s): G. Wenke ; E. Patzak ; P. Meissner
- Source: Electronics Letters, Volume 22, Issue 4, p. 206 –207
- DOI: 10.1049/el:19860144
- Type: Article
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–207
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An external-cavity transmitter configuration is introduced using a semiconductor laser at 1.3 μm wavelength, a spherical reflector for laser mode selection and a semitransparent Au-coated GRIN-rod lens for linewidth reduction. At 1.45 mW output power a linewidth of 700 kHz and a laser sidemode suppression of 30 dB is achieved.
Electrical characterisation of epitaxially overgrown Si in Si<111>/CoSi2/Si metal base transistor
- Author(s): S. Delage ; P.A. Badoz ; E. Rosencher ; F. Arnaud D'Avitaya
- Source: Electronics Letters, Volume 22, Issue 4, p. 207 –209
- DOI: 10.1049/el:19860145
- Type: Article
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–209
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Epitaxial Si<111>/CoSi2/Si heterostructures have been grown using molecular beam epitaxy (MBE) apparatus with the overgrown Si layer doped by Sb coevaporation. Electrical characteristics of the top CoSi2/Si epitaxial Schottky barriers are presented. Current/voltage (I/V), capacitance/voltage (C/V) characteristics and deep level transient spectra (DLTS) show that the overgrown Si material is deviceworthy. Furthermore, transconductance measurements between the emitter and collector of the metal base transistor (MBT) indicate that the high Si quality is obtained with a negligible pinhole density in the base. Measurements of the current gain α in the MBT confirm a value of the CoSi2 ballistic mean free path of 90 Å ± 20 Å.
Dispersion measurement using only two wavelengths
- Author(s): D.W. Schicketanz and C.K. Eoll
- Source: Electronics Letters, Volume 22, Issue 4, p. 209 –210
- DOI: 10.1049/el:19860146
- Type: Article
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–210
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A method that uses only two wavelengths to measure dispersion is presented. With this method, simple set-ups and fast measurements are possible. Even for a field test, the measuring time would be mainly determined by fibre preparation time.
Fibre-optic spectral filters consisting of concatenated dual-core fibres
- Author(s): K. Okamoto and J. Noda
- Source: Electronics Letters, Volume 22, Issue 4, p. 211 –212
- DOI: 10.1049/el:19860147
- Type: Article
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–212
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Fibre-optic spectral filters using concatenated dual-core fibres are reported. Both a spectral bandpass filter with 17 nm FWHM (full width at half-maximum) and a band-elimination filter with -60.8 dB extinction ratio have been realised.
Enhanced field emission from plasma-texturised Si-SiO2 interfaces
- Author(s): H.J. Bühlmann ; M. Olcer ; M. Ilegems
- Source: Electronics Letters, Volume 22, Issue 4, p. 212 –214
- DOI: 10.1049/el:19860148
- Type: Article
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–214
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We describe a novel method to achieve enhanced electron injection into silicon dioxide by tunnel emission from texturised silicon surfaces. Field enhancement factors from ∼4 to ∼8 have been realised for 60 nm-thick oxides thermally grown on anisotropically plasma-etched Si surfaces. Implementation of these textured interface structures should allow significant improvements in the write/erase processes of EEPROM memory devices.
FSK transmission experiment using 10.5 km polarisation-maintaining fibre
- Author(s): K. Iwashita ; H. Kano ; T. Matsumoto ; Y. Sasaki
- Source: Electronics Letters, Volume 22, Issue 4, p. 214 –215
- DOI: 10.1049/el:19860149
- Type: Article
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A 400 Mbit/s FSK transmission experiment is performed using 10.5 km PANDA fibre with crosstalk of −23 dB. The polarisation state is stable and excess errors are not found in the presence of forced fibre fluctuations. The influence of polarisation direction of the incident light on transmission characteristics is discussed.
High-detectivity InAs0.85Sb0.15/InAs infra-red (1.8-4.8 μm) detectors
- Author(s): K. Mohammed ; F. Capasso ; R.A. Logan ; J.P. van der Ziel ; A.L. Hutchinson
- Source: Electronics Letters, Volume 22, Issue 4, p. 215 –216
- DOI: 10.1049/el:19860150
- Type: Article
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We report the operation of broadband InAs0.85Sb0.15pn-junction photodetectors grown on InAs by liquid phase epitaxy. Despite the relatively large mismatch (≃1%) between the layers and the substrate the devices exhibit excellent zero bias detectivities (D*(70 K) = (1.5 × 1011 cm(Hz)1/2/W; D* (200 K) = 2 × 1010 cm(Hz)1/2/W at λ = 3.5 μm) and peak external quantum efficiencies of 40%.
High-power AlGaAs laser with a thin tapered-thickness active layer
- Author(s): T. Murakami ; K. Ohtaki ; H. Matsubara ; T. Yamawaki ; H. Saito ; K. Isshiki ; Y. Kokubo ; H. Kumabe ; W. Susaki
- Source: Electronics Letters, Volume 22, Issue 4, p. 217 –218
- DOI: 10.1049/el:19860151
- Type: Article
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–218
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A laser whose active layer is thinner near the mirror facet than the inner region is fabricated. Lasers with narrow beam divergence perpendicular to the junction, as narrow as 10°-20°, are obtained with little increase of threshold current. For lasers emitting at 780 nm, stable 30 mW operation at 50°C has been confirmed without obvious degradation over 4000 h.
Dependence of conduction-band discontinuity on aluminium mole fraction in GaAs/AlGaAs heterojunctions
- Author(s): A.J. Hill and P.H. Ladbrooke
- Source: Electronics Letters, Volume 22, Issue 4, p. 218 –219
- DOI: 10.1049/el:19860152
- Type: Article
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p.
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–219
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The conduction-band discontinuity dependence on aluminium mole fraction for GaAs/AlGaAs heterojunctions is discussed and is shown to have a maximum value at a mole fraction of approximately 0.45.
Independent analysis of quantiser and predictor used in CCITT 32 kbit/s ADPCM algorithm
- Author(s): A.M. De Lima Araujo ; A. Alcaim ; J.A. Boissen de Marca
- Source: Electronics Letters, Volume 22, Issue 4, p. 220 –221
- DOI: 10.1049/el:19860153
- Type: Article
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–221
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CCITT has standardised an ADPCM coding scheme at 32 kbit/s which employs a quantiser with two speeds of adaptation and an adaptive predictor with six zeros and two poles. The letter investigates the benefits brought by the quantiser and the predictor, independently, when coding speech signals. The results are given in terms of the mean segmental signal/noise ratio, obtained in communication channels with bit error rates equal to 0, 10-4, 10-3, 10-2 and 10-1.
GaAs IC fabrication using a novel open-tube sulphur diffusion technique
- Author(s): M. Oren and F.C. Prince
- Source: Electronics Letters, Volume 22, Issue 4, p. 221 –222
- DOI: 10.1049/el:19860154
- Type: Article
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p.
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–222
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High-transconductance (gm) GaAs FETs and ring oscillators were fabricated using a novel open-tube sulphur diffusion method to form the active layer in a 2 in (51 mm) LEC wafer. Extrinsic transconductances as high as 200 mS/mm were obtained on 2 μm-gate FETs. A DCFL ring oscillator, fabricated with 2 μm-gate FETs, had 54 ps gate delay at room temperature. This diffusion technique was found to be suitable for GaAs IC fabrication.
Performance analysis of interconnection networks of a modified model for synchronous multiprocessors
- Author(s): A. Pombortsis and C. Halatsis
- Source: Electronics Letters, Volume 22, Issue 4, p. 222 –224
- DOI: 10.1049/el:19860155
- Type: Article
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–224
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The letter presents an analysis of a modified model for synchronous multiprocessor systems. In this model, besides the shared memory modules, each processor has a private memory. The memory references of each processor are not uniformly distributed among the memory modules. The interconnection network is considered to be either a crossbar or a shared bus.
Single-drift flat-profile GaAs impatt diodes at 90 GHz
- Author(s): H. Eisele and J. Freyer
- Source: Electronics Letters, Volume 22, Issue 4, p. 224 –225
- DOI: 10.1049/el:19860156
- Type: Article
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GaAs impatt diodes were fabricated for the 90 GHz range using the single-drift-region structure with flat doping profile. The diodes were fabricated from molecular-beam-epitaxial material and mounted on diamond heat sinks. A highest output power of 240 mW with 4.1% efficiency at 89.6 GHz was achieved.
Model for throughput in multichannel CSMA/CD systems
- Author(s): T.D. Todd
- Source: Electronics Letters, Volume 22, Issue 4, p. 225 –227
- DOI: 10.1049/el:19860157
- Type: Article
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In the letter we formulate an exact analytic model for throughput in multichannel CSMA/CD systems. A salient feature of this model is that the normalised end-to-end propagation delay remains fixed as the number of channels is changed. As a result, it is shown that, under a Poisson arrival process, the optimum number of channels is dependent on the input load. This and other results are in sharp contrast to the conclusion obtained from previous approximate models.
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