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Online ISSN 1350-911X Print ISSN 0013-5194

Electronics Letters

Volume 22, Issue 4, 13 February 1986

Volumes & issues:

Volume 22, Issue 4

13 February 1986

Stable matrix inverse method for array DF using trapezoidal factorisation
Floating substrate effects on speed performance in scaled CMOS/SOS circuits
Number of appearances of a synch marker inside a random data block
All-PANDA-fibre multi/demultiplexer utilising polarisation beat phenomenon in birefringent fibres
  • Author(s): K. Okamoto ; T. Morioka ; I. Yokohama ; J. Noda
  • Source: Electronics Letters, Volume 22, Issue 4, p. 181 –182
  • DOI:  10.1049/el:19860126
  • Type: Article
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  • p. 181 –182 (2)
    A new all-PANDA-fibre multi/demultiplexer, which consists of 1.65 m PANDA-fibre wavelength-selective region, fibreoptic polarising beam splitter and fibre polarisers, is demonstrated at 1.53 μm. To show the feasibility of the fibre-optic multi/demultiplexer in wavelength-division multiplexing (WDM), two different spectral components of the multimode laser (δλ = 13.8 Å) were successfully separated, with an extinction ratio of 23 dB and an insertion loss of 1.5 dB.
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TE01-mode propagation in a circular guide containing azimuthally magnetised remanent ferrite
Transduction mechanisms in SAW gas sensors
Fast interpolation algorithm using FFT
  • Author(s): K.P. Prasad  and  P. Satyanarayana
  • Source: Electronics Letters, Volume 22, Issue 4, p. 185 –187
  • DOI:  10.1049/el:19860129
  • Type: Article
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  • p. 185 –187 (3)
    An interpolation algorithm for finite-duration real sequences using the discrete Fourier transform is presented. The proposed method is shown to result in a significant saving of computational labour over the discrete version of the time-domain classical interpolation formula. Estimation of inbetween samples for large sequences is possible within a mean square error of 0.00114 with this method. Some considerations with regard to the computation of FFTs are also discussed.
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Reduction of floating substrate effect in thin-film SOI MOSFETs
Wideband monolithic AGC amplifier for 400 Mbit/s optical repeaters using an advanced Si-bipolar IC technology, SICOS
Annealing effect in Si-doped GaAs and AlGaAs layers grown by MBE
  • Author(s): T. Ishikawa ; T. Inata ; K. Kondo ; A. Shibatomi
  • Source: Electronics Letters, Volume 22, Issue 4, p. 189 –190
  • DOI:  10.1049/el:19860132
  • Type: Article
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  • p. 189 –190 (2)
    The effect of annealing on Si-doped GaAs and Al0·3Ga0·7As layers grown by MBE has been studied. In the heavily doped samples, the donor concentration decreased considerably and the broad luminescence characteristic of the SA centre reported in bulk n-GaAs appeared. The results suggest evidence that annealing converts some of the Si donors into complexes like the SA centre, which does not act as a donor.
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Heavily Si-doped InGaAs lattice-matched to InP grown by MBE
42 km analogue video signal transmission in single-mode fibres using 1.3 μm edge-emitting LEDs
Planar monolithic integration of a GaAs photoconductor and a GaAs field-effect transistor
Electrical noise measurements on laser diodes for monitoring of optical feedback and mode hopping
Canonic adaptor realisations for wave switched-capacitor filters
Efficient diode-pumped CW and Q-switched single-mode fibre laser
In-band least-squares echo canceller
Microwave field-detecting element based on pyroelectric effect in PVDF
Large-area, high-speed PIN detectors in GaAs
Novel CMOS Schmitt trigger
Efficient ARQ technique using soft demodulation
  • Author(s): G. Benelli
  • Source: Electronics Letters, Volume 22, Issue 4, p. 205 –206
  • DOI:  10.1049/el:19860143
  • Type: Article
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  • p. 205 –206 (2)
    In the letter a new technique for increasing the efficiency of an automatic-repeat-request communication system is described. This technique uses all the received versions of a codeword, and also those versions containing errors. Such a strategy, together with a soft demodulation of each received symbol, is particularly efficient when applied to ARQ schemes in which each block erroneously received is retransmitted many times.
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Reliable laboratory transmitter with submegahertz linewidth
Electrical characterisation of epitaxially overgrown Si in Si<111>/CoSi2/Si metal base transistor
  • Author(s): S. Delage ; P.A. Badoz ; E. Rosencher ; F. Arnaud D'Avitaya
  • Source: Electronics Letters, Volume 22, Issue 4, p. 207 –209
  • DOI:  10.1049/el:19860145
  • Type: Article
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  • p. 207 –209 (3)
    Epitaxial Si<111>/CoSi2/Si heterostructures have been grown using molecular beam epitaxy (MBE) apparatus with the overgrown Si layer doped by Sb coevaporation. Electrical characteristics of the top CoSi2/Si epitaxial Schottky barriers are presented. Current/voltage (I/V), capacitance/voltage (C/V) characteristics and deep level transient spectra (DLTS) show that the overgrown Si material is deviceworthy. Furthermore, transconductance measurements between the emitter and collector of the metal base transistor (MBT) indicate that the high Si quality is obtained with a negligible pinhole density in the base. Measurements of the current gain α in the MBT confirm a value of the CoSi2 ballistic mean free path of 90 Å ± 20 Å.
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Dispersion measurement using only two wavelengths
Fibre-optic spectral filters consisting of concatenated dual-core fibres
Enhanced field emission from plasma-texturised Si-SiO2 interfaces
  • Author(s): H.J. Bühlmann ; M. Olcer ; M. Ilegems
  • Source: Electronics Letters, Volume 22, Issue 4, p. 212 –214
  • DOI:  10.1049/el:19860148
  • Type: Article
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  • p. 212 –214 (3)
    We describe a novel method to achieve enhanced electron injection into silicon dioxide by tunnel emission from texturised silicon surfaces. Field enhancement factors from ∼4 to ∼8 have been realised for 60 nm-thick oxides thermally grown on anisotropically plasma-etched Si surfaces. Implementation of these textured interface structures should allow significant improvements in the write/erase processes of EEPROM memory devices.
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FSK transmission experiment using 10.5 km polarisation-maintaining fibre
High-detectivity InAs0.85Sb0.15/InAs infra-red (1.8-4.8 μm) detectors
  • Author(s): K. Mohammed ; F. Capasso ; R.A. Logan ; J.P. van der Ziel ; A.L. Hutchinson
  • Source: Electronics Letters, Volume 22, Issue 4, p. 215 –216
  • DOI:  10.1049/el:19860150
  • Type: Article
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  • p. 215 –216 (2)
    We report the operation of broadband InAs0.85Sb0.15pn-junction photodetectors grown on InAs by liquid phase epitaxy. Despite the relatively large mismatch (≃1%) between the layers and the substrate the devices exhibit excellent zero bias detectivities (D*(70 K) = (1.5 × 1011 cm(Hz)1/2/W; D* (200 K) = 2 × 1010 cm(Hz)1/2/W at λ = 3.5 μm) and peak external quantum efficiencies of 40%.
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High-power AlGaAs laser with a thin tapered-thickness active layer
  • Author(s): T. Murakami ; K. Ohtaki ; H. Matsubara ; T. Yamawaki ; H. Saito ; K. Isshiki ; Y. Kokubo ; H. Kumabe ; W. Susaki
  • Source: Electronics Letters, Volume 22, Issue 4, p. 217 –218
  • DOI:  10.1049/el:19860151
  • Type: Article
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  • p. 217 –218 (2)
    A laser whose active layer is thinner near the mirror facet than the inner region is fabricated. Lasers with narrow beam divergence perpendicular to the junction, as narrow as 10°-20°, are obtained with little increase of threshold current. For lasers emitting at 780 nm, stable 30 mW operation at 50°C has been confirmed without obvious degradation over 4000 h.
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Dependence of conduction-band discontinuity on aluminium mole fraction in GaAs/AlGaAs heterojunctions
Independent analysis of quantiser and predictor used in CCITT 32 kbit/s ADPCM algorithm
  • Author(s): A.M. De Lima Araujo ; A. Alcaim ; J.A. Boissen de Marca
  • Source: Electronics Letters, Volume 22, Issue 4, p. 220 –221
  • DOI:  10.1049/el:19860153
  • Type: Article
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  • p. 220 –221 (2)
    CCITT has standardised an ADPCM coding scheme at 32 kbit/s which employs a quantiser with two speeds of adaptation and an adaptive predictor with six zeros and two poles. The letter investigates the benefits brought by the quantiser and the predictor, independently, when coding speech signals. The results are given in terms of the mean segmental signal/noise ratio, obtained in communication channels with bit error rates equal to 0, 10-4, 10-3, 10-2 and 10-1.
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GaAs IC fabrication using a novel open-tube sulphur diffusion technique
  • Author(s): M. Oren  and  F.C. Prince
  • Source: Electronics Letters, Volume 22, Issue 4, p. 221 –222
  • DOI:  10.1049/el:19860154
  • Type: Article
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  • p. 221 –222 (2)
    High-transconductance (gm) GaAs FETs and ring oscillators were fabricated using a novel open-tube sulphur diffusion method to form the active layer in a 2 in (51 mm) LEC wafer. Extrinsic transconductances as high as 200 mS/mm were obtained on 2 μm-gate FETs. A DCFL ring oscillator, fabricated with 2 μm-gate FETs, had 54 ps gate delay at room temperature. This diffusion technique was found to be suitable for GaAs IC fabrication.
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Performance analysis of interconnection networks of a modified model for synchronous multiprocessors
Single-drift flat-profile GaAs impatt diodes at 90 GHz
Model for throughput in multichannel CSMA/CD systems
  • Author(s): T.D. Todd
  • Source: Electronics Letters, Volume 22, Issue 4, p. 225 –227
  • DOI:  10.1049/el:19860157
  • Type: Article
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  • p. 225 –227 (3)
    In the letter we formulate an exact analytic model for throughput in multichannel CSMA/CD systems. A salient feature of this model is that the normalised end-to-end propagation delay remains fixed as the number of channels is changed. As a result, it is shown that, under a Poisson arrival process, the optimum number of channels is dependent on the input load. This and other results are in sharp contrast to the conclusion obtained from previous approximate models.
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