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Online ISSN 1350-911X Print ISSN 0013-5194

Electronics Letters

Volume 22, Issue 11, 22 May 1986

Volumes & issues:

Volume 22, Issue 11

22 May 1986

Caughey-Thomas parameters for electron mobility calculations in GaAs
  • Author(s): C.M. Maziar  and  M.S. Lundstrom
  • Source: Electronics Letters, Volume 22, Issue 11, p. 565 –566
  • DOI:  10.1049/el:19860384
  • Type: Article
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  • p. 565 –566 (2)
    The Caughey-Thomas expression, an empirically derived formulation for carrier mobility, is used here to relate carrier compensation to electron mobility. A set of equations expressing the Caughey-Thomas parameters as functions of the compensation ratio are presented. Use of these expressions reproduces results of theoretical low-field mobility computations and provides a simple means of incorporating effects of carrier compensation as well as concentration in device analysis programs.
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Control of an optical network by a commercial PABX
Limit to sensitivity of optical fibre magnetometers due to shape anisotropy
Eliminating spurious modes in finite-element waveguide problems by using divergence-free fields
Chromatic dispersion measurement over a 100 km dispersion-shifted single-mode fibre by a new phase-shift technique
  • Author(s): M. Fujise ; M. Kuwazuru ; M. Nunokawa ; Y. Iwamoto
  • Source: Electronics Letters, Volume 22, Issue 11, p. 570 –572
  • DOI:  10.1049/el:19860388
  • Type: Article
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  • p. 570 –572 (3)
    Chromatic dispersion of a 100.7 km concatenated dispersion-shifted single-mode fibre has been measured by a two wavelengths division multiplexing phase-shift technique utilising four laser diodes in the 1.3∼1.6 μm spectral region. Measurement accuracies of dispersion and zero-dispersion wavelength were good and within ±0.025 ps/km nm and ±0.3 nm, respectively. The measured result of dispersion coincided with the arithmetic mean of those of the constituent fibres.
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Design tables for partial-response data transmission filters
  • Author(s): A. Adama  and  L.F. Lind
  • Source: Electronics Letters, Volume 22, Issue 11, p. 572 –574
  • DOI:  10.1049/el:19860389
  • Type: Article
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  • p. 572 –574 (3)
    Practical design tables are presented for partial-response class 1 data transmission filters. These tables give the pole and zero locations and the main sample point of several filters. This information can be used to analyse the performance of the filters, both in the time domain and frequency domain, thus assisting the user in the choice of a filter to meet the requirements. The filters given in the tables can be syntheised in either active or passive form.
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Relation between macrobending losses and cutoff wavelength in dispersion-shifted segmented-core fibres
35 GHz phase-locked Gunn source based on current hump phase detection
Zenithal attenuation due to molecular oxygen and water vapour, in the frequency range 3–350 GHz
High-frequency noise of InyGa1−yAs/AlxGa1−xAs MODFETs and comparison to GaAs/AlxGa1−xAs MODFETs
  • Author(s): H. Morkoç ; T. Henderson ; W. Kopp ; C.K. Peng
  • Source: Electronics Letters, Volume 22, Issue 11, p. 578 –580
  • DOI:  10.1049/el:19860393
  • Type: Article
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  • p. 578 –580 (3)
    Noise parameter measurements for recently developed 1 μm gate InyGa1−yAs/Al0.15Ga0.85As MODFETs have been performed at 8 GHz at room and cryogenic temperatures. Owing to the relatively small Cgs/√gm ratio in these devices compared to identical conventional GaAs/AlGaAs MODFETs, both room- and cryogenic temperature noise figures have been reduced. In addition, the light sensitivity and drift in noise figure at cryogenic temperatures observed in conventional GaAs/AlGaAs MODFETs have been sub stantially reduced.
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Theoretical calculation of the linewidth enhancement factor of DFB lasers
Fast public-key cryptosystem using congruent polynomial equations
New copper phthalocyanine-resin binder-type photoreceptor for xerographic applications
Very low-threshold (0.8 kA/cm2)InGaAsP/InP DH 1.5 μm lasers grown by atmospheric MOVPE
  • Author(s): W.J. Devlin ; J. Sidhu ; S. Cole ; M. Harlow ; L.D. Westbrook ; A.W. Nelson ; J.C. Regnault
  • Source: Electronics Letters, Volume 22, Issue 11, p. 584 –585
  • DOI:  10.1049/el:19860397
  • Type: Article
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  • p. 584 –585 (2)
    Broad-area lasers have been fabricated from five separate atmospheric MOVPE DH wafers. Good agreement is found with expected theoretical predictions of the threshold/length and active-layer thickness dependences. The FWHM of the radiation in the plane perpendicular to the junction is well described by published values of active and cladding refractive indices.
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Integrated AlGaAs two-beam LD-PD array fabricated by reactive ion beam etching
  • Author(s): M. Uchida ; S. Matsumoto ; K. Asakawa ; H. Kawano
  • Source: Electronics Letters, Volume 22, Issue 11, p. 585 –587
  • DOI:  10.1049/el:19860398
  • Type: Article
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  • p. 585 –587 (3)
    Monolitically integrated AlGaAs two-beam laser diode (LD)- photodiode (PD) arrays are described. LDs and PDs have etched facets fabricated by reactive ion beam etching (RIBE). LDs in the array exhibit threshold currents as low as 18 mA and external quantum efficiencies of more than 30% per facet. A PD can detect more than 20% of a light beam emitted from an LD facing it. Crosstalk between the two LD-PD columns (separated by 50 μm), on the other hand, is suppressed to less than −20 dB by an AlGaAs optical barrier (5 μm thick) fabricated between them.
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Heterodyne detection at 10.6 μm using quasiplanar metal-oxide-metal tunnel diodes
  • Author(s): J.A. Calviello ; R. Augeri ; V. Boccio ; D. Ward
  • Source: Electronics Letters, Volume 22, Issue 11, p. 587 –589
  • DOI:  10.1049/el:19860399
  • Type: Article
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  • p. 587 –589 (3)
    Novel high-performance, symmetrical metal-oxide-metal tunnel diodes (MOMTDs) in a quasiplanar configuration (US patent 4 549 194) have been successfully fabricated, and for the first time used as room-temperature detectors for the heterodyne mixing of two CO2 lasers operating on the P14 line near λ = 10.6 μm. Using these devices, we have achieved state-of-the-art NEP (noise equivalent power) in the 4 to 6 × 10−16 W/Hz range and a D* of 5 × 106 cm Hz½/W.
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Theoretical and experimental results of guided wavelength of a slot on a low-permittivity substrate
Fabrication of an NpM GaInAs/InP bipolar transistor by a two-step epitaxial process
  • Author(s): N. Emeis  and  H. Beneking
  • Source: Electronics Letters, Volume 22, Issue 11, p. 590 –591
  • DOI:  10.1049/el:19860401
  • Type: Article
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  • p. 590 –591 (2)
    A two-step liquid-phase-epitaxial process has been used to fabricate widegap-emitter Schottky collector transistors. After the growth of the first two epitaxial layers the sample has been structured and then overgrown in a second run. In that way a pn homojunction in the widegap material (InP) underneath the extrinsic base-emitter region and a pn heterojunction under the collector have been formed. First transistors fabricated show a current gain of 10 in the common-emitter configuration.
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New type of compact electromagnetic applicator for hyperthermia in the treatment of cancer
High-efficiency Bragg cells in gallium phosphide
InGaAsP/InP monolithic integrated circuit with lasers and an optical switch
HF peak limiting and enhancement of MAC video signals for half-transponder satellite TV distribution
Overlaid CMOS
  • Author(s): S.D.S. Malhi ; K.E. Bean ; R. Sunderesan ; L.R. Hite
  • Source: Electronics Letters, Volume 22, Issue 11, p. 598 –599
  • DOI:  10.1049/el:19860406
  • Type: Article
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  • p. 598 –599 (2)
    A CMOS structure where the source and drain terminals of the MOSFETs are in polysilicon overlaid on top of a thick oxide and the channel is in single-crystal silicon is described, utilising a 970°C SiH4 CVD process which simultaneously deposits epitaxial silicon on the exposed silicon substrate and polysilicon on oxide. The structure allows a more compact CMOS inverter layout and reduced source/drain parasitic capacitances.
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Analogue OTA multiplier without input voltage swing restrictions, and temperature-compensated
  • Author(s): J. Silva-Martìnez  and  E. Sànchez-Sinencio
  • Source: Electronics Letters, Volume 22, Issue 11, p. 599 –600
  • DOI:  10.1049/el:19860407
  • Type: Article
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  • p. 599 –600 (2)
    An analogue multiplier with operational transconductance amplifiers (OTAs) is presented. It overcomes the typical problems of previous OTA multipliers: limited input voltage swings and temperature dependence. It uses a minimum number of resistive components, and only two of them are critical in their performance. A simple temperature compensation scheme for the OTA multiplier is introduced.
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8 Gbit/s transmission over 30 km of optical fibre
Scattering measurements on a low-loss fluorozirconate optical fibre
  • Author(s): G. Lu ; K.H. Levin ; M.J. Burk ; D.C. Tran
  • Source: Electronics Letters, Volume 22, Issue 11, p. 602 –603
  • DOI:  10.1049/el:19860409
  • Type: Article
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  • p. 602 –603 (2)
    The scattering loss in a low-loss fluorozirconate fibre has been measured in the infra-red and visible regions using an integrating sphere. At 2.55 μm, the scattering loss is 1 dB/km including a wavelength-independent offset of 0.6 dB/km. Two bright pinpoints in the fibre were found to contribute a few per cent of the total scattering from the entire fibre. Otherwise, there was found to be little variation in scattering level along the fibre.
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Novel technique for deposition of hydrogenated amorphous silicon thin films
Five watt continuous-wave AlGaAs laser diodes
External Q of probe-coupled dielectric resonator
Transverse modal analysis of edge-coupled microstrip resonators
Polarisation diversity in portable communications environment
New modification of topological formulas
Bipolar transistor action in cadmium mercury telluride
Extended prony method applied to noisy data
  • Author(s): R. Gómez Martín  and  M.C. Carrión Perez
  • Source: Electronics Letters, Volume 22, Issue 11, p. 613 –614
  • DOI:  10.1049/el:19860417
  • Type: Article
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  • p. 613 –614 (2)
    In the letter we show how it is possible to improve the performance of the moving window technique by processing the window data in both forward and backward directions. The method is applied to the extraction of the poles of the backscattered field for a Gaussian pulse incident from some different angles on a straight wire. White noise has been added to the signal to be analysed. Numerical examples for several cases are presented.
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Silicon microcavities fabricated with a new technique
  • Author(s): L. Tenerz  and  B. Hök
  • Source: Electronics Letters, Volume 22, Issue 11, p. 615 –616
  • DOI:  10.1049/el:19860418
  • Type: Article
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  • p. 615 –616 (2)
    A new fabrication technique for silicon microcavities is described. The technique makes use of lithographic patterning and etching techniques, high-temperature bonding between hydrated surfaces and selective etching. Cavities with dimensions 100 × 250 × 12 μm and with a confining membrane consisting of a 1 μm-thick SiO2, film are demonstrated. The technique is potentially totally IC-compatible and can be used to realise a variety of sensor and actuator structures.
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Phase-noise reduction in coherence-multiplexed interferometric fibre sensors
Stability test for B(Z1,Z2)=Σ2m=0Σ2n=0bmnZm1Zn2in closed form
Erratum: MOS transconductors and integrators with high linearity
Erratum: Wide-range directional LDV employing modulated semiconductor laser source
Erratum: Intermodulation and harmonic distortion in InGaAsP lasers
Erratum: Application of space-time duality to recursive structures

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