Online ISSN
1350-911X
Print ISSN
0013-5194
Electronics Letters
Volume 21, Issue 9, 25 April 1985
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Volume 21, Issue 9
25 April 1985
Equalisation of semiconductor diode laser frequency modulation with a passive network
- Author(s): S.B. Alexander and D. Welford
- Source: Electronics Letters, Volume 21, Issue 9, p. 361 –362
- DOI: 10.1049/el:19850257
- Type: Article
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p.
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–362
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An equalisation network has been developed that improves the direct frequency modulation performance of GaAlAs semiconductor diode lasers. At modulation frequencies below 10 MHz, thermal modulation of the diode laser active region causes an enhanced frequency modulation response. A passive network has been developed which shapes the injection current modulation waveform to suppress the low-frequency enhancement.
Sensitivity improvement in digital microwave signal analysis
- Author(s): K. Matkey ; H.-J. Meckelburg ; M. Kampmann
- Source: Electronics Letters, Volume 21, Issue 9, p. 362 –363
- DOI: 10.1049/el:19850258
- Type: Article
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–363
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Sensitivity in digital microwave signal analysis strongly depends on the signal/noise ratio. The letter describes a method which improves the signal/noise ratio and therefore the sensitivity of monofrequent amplitude and phase measurements by means of sampling below the Nyquist frequency.
Antireflection coatings on lithium niobate waveguide devices using electron beam evaporated yttrium oxide
- Author(s): G. Eisenstein ; S.K. Korotky ; L.W. Stulz ; R.M. Jopson ; K.L. Hall
- Source: Electronics Letters, Volume 21, Issue 9, p. 363 –364
- DOI: 10.1049/el:19850259
- Type: Article
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–364
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We report the first antireflection coatings for fibre pigtailed Ti:LiNbO3 waveguide devices optimised for the 1.55 μm wavelength range. The coatings are single-layer, electron-beam-evaporated yttrium oxide films. A reflection of −35 dB, sufficiently low for operation in conjunction with single-frequency lasers, has been demonstrated.
Reduction of computational cost in DFT implementation of FIR digital filters
- Author(s): G. Martinelli ; G. Orlandi ; P. Burrascano
- Source: Electronics Letters, Volume 21, Issue 9, p. 364 –366
- DOI: 10.1049/el:19850260
- Type: Article
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–366
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The influence on the computational cost of the transformation of a FIR digital filter into cyclic convolutions is analysed in the letter. An optimal choice of the length of the cyclic convolutions is suggested and illustrated.
Computationally efficient algorithm for implementing multipulse LPC analysis
- Author(s): B.J. Guillemin and D.T. Nguyen
- Source: Electronics Letters, Volume 21, Issue 9, p. 366 –367
- DOI: 10.1049/el:19850261
- Type: Article
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–367
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Multipulse LPC analysis can substantially eliminate the pitch-related bias in the LPC filter parameters. However, the procedure is computationally intensive. We present a more efficient algorithm, based on the autocorrelation method of linear prediction, which has application in voice synthesis and vocal-tract area-function recovery.
Longitudinal-mode behaviour of λ/4-shifted InGaAsP/InP DFB lasers
- Author(s): K. Utaka ; S. Akiba ; K. Sakai ; Y. Matsushima
- Source: Electronics Letters, Volume 21, Issue 9, p. 367 –369
- DOI: 10.1049/el:19850262
- Type: Article
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–369
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Longitudinal-mode behaviour of λ/4-shifted InGaAsP/InP DFB lasers fabricated by the nega-posi method have been studied. The deviation of the main mode from the centre of the stopband, which was attributed to an accidental additional phase shift introduced around the λ/4-shifted position, was related to the intensity ratio of the main to side mode below the threshold, and it was much larger compared to conventional DFB lasers for the devices with small deviation. The intensity ratio above the threshold was about 35 dB or more in 100% direct modulation for most of the lasers.
Transmission over 107 km of dispersion-shifted fibre at 16 Mbit/s using a 1.55 μm edge-emitting source
- Author(s): R. Plastow ; K.L. Monham ; A.C. Carter ; J.E. Ritter ; T.D. Croft ; M. Gibson
- Source: Electronics Letters, Volume 21, Issue 9, p. 369 –370
- DOI: 10.1049/el:19850263
- Type: Article
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–370
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We report transmission over 107 km of dispersion-shifted fibre at 16 Mbit/s using a subthreshold laser as an edge-emitting LED source, demonstrating the suitability of such a fibre-source combination for low-cost, inherently upgradable telecommunication systems.
Simple derivation of six-port reflectometer equations
- Author(s): J.D. Hunter and P.I. Somlo
- Source: Electronics Letters, Volume 21, Issue 9, p. 370 –371
- DOI: 10.1049/el:19850264
- Type: Article
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–371
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It is shown that the fundamental six-port equations can be obtained, almost by inspection, from a suitably normalised flow graph. The form of the six-port equations suited to most practical reflectometers is deduced.
Observation of heavy-hole and light-hole excitons in InGaAs/InAlAs MQW structures at room temperature
- Author(s): Y. Kawamura ; K. Wakita ; H. Asahi
- Source: Electronics Letters, Volume 21, Issue 9, p. 371 –373
- DOI: 10.1049/el:19850265
- Type: Article
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Heavy-hole and light-hole excitons were clearly observed at room temperature in the InGaAs/InAlAs MQW structure for the first time. The observed values of the exciton peak energy agree well with the calculated values. The halfwidth of the photoluminescence spectrum of MQW wafers is as narrow as 470 Å (25 meV) at room temperature, which is only 57% of that (970 Å, 44 meV) of the undoped bulk InGaAs layer.
Sheet electron concentration at the heterointerface in Al0.48In0.52As/Ga0.47In0.53As modulation-doped structures
- Author(s): T. Itoh ; T. Griem ; G.W. Wicks ; L.F. Eastman
- Source: Electronics Letters, Volume 21, Issue 9, p. 373 –374
- DOI: 10.1049/el:19850266
- Type: Article
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Sheet electron concentration at the heterointerface in Al0.48In0.52As/Ga0.47In0.53As modulation-doped structures has been calculated as a function of the spacer layer thickness, the doping concentration in Al0.48In0.52As and the lattice temperature. The calculated results were compared with those for Al0.3Ga0.7As/GaAs structures and also with the experimental data. It is shown that, compared with AlGaAs/GaAs about 1.5 times higher sheet electron concentration can be obtained in AlInAs/GaInAs at the same doping level, which is in good agreement with the experimental results.
Narrow spectral linewidth characteristics of monolithic integrated-passive-cavity InGaAsP/InP semiconductor lasers
- Author(s): T. Fujita ; J. Ohya ; K. Matsuda ; M. Ishino ; H. Sato ; H. Serizawa
- Source: Electronics Letters, Volume 21, Issue 9, p. 374 –376
- DOI: 10.1049/el:19850267
- Type: Article
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p.
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–376
(3)
The spectral linewidth of 1.3 μm monolithic integrated-passive-cavity (IPC) semiconductor laser is measured by a delayed self-heterodyne technique. It is found that the line-width is narrowed when longitudinal submode is suppressed. The narrowest linewidth obtained so far is 900 kHz at 6 mW output power.
2–20 GHz hybrid GaAs MESFET distributed amplifier
- Author(s): C. Venet and P. Baudet
- Source: Electronics Letters, Volume 21, Issue 9, p. 376 –377
- DOI: 10.1049/el:19850268
- Type: Article
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–377
(2)
A hybrid distributed amplifier using eight 75 μm-gate periphery GaAs MESFETs is reported. The amplifier operates in the 2–20 GHz frequency range with 6.2 dB gain ±0.4 dB gain ripple.
How to forge RSA key certificates
- Author(s): J.A. Gordon
- Source: Electronics Letters, Volume 21, Issue 9, p. 377 –379
- DOI: 10.1049/el:19850269
- Type: Article
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p.
377
–379
(3)
It is shown how certain types of key certificate suggested for preventing masquerade when using the RSA public key cryptosystem can be easily forged. A remedy is given, which is to use an alternative type of certificate, incorporating a one-way function.
Crosspolarisation and gain reduction due to sand or dust on microwave reflector antennas
- Author(s): S.O. Bashir and N.J. McEwan
- Source: Electronics Letters, Volume 21, Issue 9, p. 379 –380
- DOI: 10.1049/el:19850270
- Type: Article
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p.
379
–380
(2)
A model describing the effect of a sand/dust accretion on the aperture field and gain of a reflector antenna is checked experimentally and extended to predict enhanced crosspolarisation. The largest effects theoretically occur for accretion layers that are uniformly thick but only cover part of the reflector.
Quick stability test for 2-D digital filters
- Author(s): E. Olcayto and M. Zein el-din
- Source: Electronics Letters, Volume 21, Issue 9, p. 380 –382
- DOI: 10.1049/el:19850271
- Type: Article
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p.
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–382
(3)
Many stability tests that are available for 2-D digital filters require long and tedious computations. In the automatic synthesis or optimisation of these filters, it is necessary that the stability is assessed very rapidly. In the letter two necessary conditions of stability are derived. Evaluation of these conditions indicate the stability of the filters. As these conditions are extremely easy to evaluate, they can be incorporated into a CAD programme.
Monolithic InGaAs photodiode array illuminated through an integrated waveguide
- Author(s): R. Trommer
- Source: Electronics Letters, Volume 21, Issue 9, p. 382 –383
- DOI: 10.1049/el:19850272
- Type: Article
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p.
382
–383
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A linear array of InGaAs PIN photodiodes has been fabricated which can be illuminated through a slab waveguide from the opposite side of the InP substrate via total reflection at a V-groove mirror. Absorption losses in the double-heterostructure waveguide are 2.5 dB/cm. The internal quantum efficiency of the photodiodes, including the mirror loss, is 87%, and an optical crosstalk between the diodes better than −40 dB was measured.
Simulation study of reactively steered adaptive arrays
- Author(s): R.J. Dinger
- Source: Electronics Letters, Volume 21, Issue 9, p. 383 –384
- DOI: 10.1049/el:19850273
- Type: Article
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p.
383
–384
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A reactively steered adaptive array has a single driven element with closely coupled parasitic elements. Adjustable reactive terminations on the parasitic elements are the adaptively controlled variables. The results of a simulation study show that the best element spacing is approximately 0.2λ, that the optimum array size is seven elements, and that this seven-element array can steer three nulls.
New class of high-performance PTAT current sources
- Author(s): H.C. Nauta and E.H. Nordholt
- Source: Electronics Letters, Volume 21, Issue 9, p. 384 –386
- DOI: 10.1049/el:19850274
- Type: Article
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p.
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–386
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A new class of PTAT current sources is presented. An extremely low supply-voltage sensitivity is realised by essentially eliminating the Early-effect influence. At very low supply voltages excellent performance is obtained with very simple circuitry.
Fabrication of MOSFETs in Si/CaF2/Si heteroepitaxial structures
- Author(s): T. Asano ; Y. Kuriyama ; H. Ishiwara
- Source: Electronics Letters, Volume 21, Issue 9, p. 386 –387
- DOI: 10.1049/el:19850275
- Type: Article
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p.
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–387
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Aluminium-gate n-channel MOSFETs have been fabricated in Si/CaF2/Si heteroepitaxial silicon-on-insulator structures. The MOSFETs were fabricated by a process including thermal oxidation in wet oxygen ambient for the formation of the gate oxide. The maximum field-effect electron mobility as high as 580 cm2/V s was obtained.
Tunable optical multi/demultiplexer for optical FDM transmission system
- Author(s): K. Inoue ; H. Toba ; K. Nosu
- Source: Electronics Letters, Volume 21, Issue 9, p. 387 –389
- DOI: 10.1049/el:19850276
- Type: Article
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p.
387
–389
(3)
An optical multi/demultiplexer with spectrum selectivity of gigahertz order is proposed. It consists of a Mach-Zehnder interferometer and a feedback control circuit. Its feasibility was experimentally demonstrated.
Technique for offset voltage cancellation in MOS operational amplifiers
- Author(s): S.L. Wong and C.A.T. Salama
- Source: Electronics Letters, Volume 21, Issue 9, p. 389 –390
- DOI: 10.1049/el:19850277
- Type: Article
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p.
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–390
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A novel technique for the continuous-time removal of the input offset voltage in operational amplifiers is presented. This scheme converts a conventional op-amp into a similar differential-in/differential-out op-amp with zero differential input offset voltage. The nonzero common-mode input offset voltage can be isolated using a sampled-data time-averaging technique and minimised by negative feedback.
Optical transmission with single-mode fibres and edge-emitting diodes
- Author(s): G. Arnold and O. Krumpholz
- Source: Electronics Letters, Volume 21, Issue 9, p. 390 –392
- DOI: 10.1049/el:19850278
- Type: Article
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p.
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–392
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Edge-emitting diodes operating at 1.3 μm wavelength are used to launch between 5 and 10 μW of optical power into single-mode fibres at a driving current of 100 mA. This permits the transmission of 140 Mbit/s over a distance of more than 10 km.
High-frequency modulation of 1.52 μm vapour-phase-transported InGaAsP lasers
- Author(s): J.E. Bowers ; T.L. Koch ; B.R. Hemenway ; D.P. Wilt ; T.J. Bridges ; E.G. Burkhardt
- Source: Electronics Letters, Volume 21, Issue 9, p. 392 –393
- DOI: 10.1049/el:19850279
- Type: Article
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p.
392
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We describe modifications to the recently demonstrated vapour-phase-transported laser to reduce the parasitic capacitance by an order of magnitude, and increase the 3 dB bandwidth for CW 1.52 μm lasers to 8 GHz. The parasitic and nonlinear limitations to this bandwidth are discussed.
Shape adaptive activity controlled multistage gain shape vector quantisation of images
- Author(s): D. Allott and R.J. Clarke
- Source: Electronics Letters, Volume 21, Issue 9, p. 393 –395
- DOI: 10.1049/el:19850280
- Type: Article
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–395
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The performance of a shape adaptive activity controlled multistage gain shape vector quantiser for digital image compression is compared with that of more established full search multistage vector quantisation methods. The advantages of the former approach to the vector quantisation coding of images are clearly demonstrated via computer simulation of the respective coding algorithms.
Measurement of the Raman crosstalk at 1.5 μm in a wavelength-division-multiplexed transmission system
- Author(s): J. Hegarty ; N.A. Olsson ; M. McGlashan-Powell
- Source: Electronics Letters, Volume 21, Issue 9, p. 395 –397
- DOI: 10.1049/el:19850281
- Type: Article
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–397
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The effects of stimulated Raman scattering between two channels in a 45 km optical fibre transmission system is measured at 1.5 μm as a function of channel separation and power. The penalties on received power in wavelength-division-multiplexed systems are calculated from the data.
Noise comparison of biased and unbiased even-harmonic Josephson mixers
- Author(s): A. Yamaguchi ; S. Kita ; K. Fujisawa
- Source: Electronics Letters, Volume 21, Issue 9, p. 397 –398
- DOI: 10.1049/el:19850282
- Type: Article
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–398
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The excess noise in biased and unbiased even-harmonic Josephson mixers is studied numerically. The results show that the unbiased mixing has much lower excess noise. This is attributed to the nonexistence of noise down-conversions due to the odd-harmonic mixing and the Josephson mixing.
Novel switched logic CMOS latch building block
- Author(s): L. Spaanenburg ; W. Pollok ; W. Vermeulen
- Source: Electronics Letters, Volume 21, Issue 9, p. 398 –399
- DOI: 10.1049/el:19850283
- Type: Article
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p.
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–399
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A six-transistor static CMOS building block for latches is proposed, based on the use of PMOS and NMOS switches. It is shown how latches can be built from this building block.
GaAs FET as a light transducer
- Author(s): W.D. Edwards
- Source: Electronics Letters, Volume 21, Issue 9, p. 399 –401
- DOI: 10.1049/el:19850284
- Type: Article
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p.
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Conditions are described in which a power GaAs FET is sensitive to and emits light at the same time. With He-Ne 6328 Å light stimulation and white-light emission a transducer ratio of 0.005 was measured. Both the sensitivity to light and the light emission are very nonuniform across the device. Although each is a measure of device nonuniformity, no correlation between the two methods of nonuniformity measurement was observed.
Mode transition matrices for fibre-optic connectors
- Author(s): G. Evers
- Source: Electronics Letters, Volume 21, Issue 9, p. 401 –402
- DOI: 10.1049/el:19850285
- Type: Article
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Mode transition matrices described the transfer of modes through a multimode fibre-optic component. These matrices are used to calculate the differential mode attenuation and thus the total loss of concatenated components. Here, matrices of connectors and their implementation into a system of concatenated couplers are presented. The experimental results demonstrate that the matrix is a powerful means to characterise the loss behaviour of a multimode fibre-optic network.
New positive-impedance convertor suitable for high-frequency application
- Author(s): J.M. Miguel
- Source: Electronics Letters, Volume 21, Issue 9, p. 402 –404
- DOI: 10.1049/el:19850286
- Type: Article
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p.
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A new PIC (positive-impedance convertor) is presented. It is achieved starting from a general method for synthesising multiport networks specified by scattering matrices. The new PIC allows the use of less critically compensated op-amps and it is suitable for high-frequency applications.
Low-threshold InGaAsP buried-crescent stop-cleaved lasers for monolithic integration
- Author(s): A. Antreasyan ; C.Y. Chen ; R.A. Logan
- Source: Electronics Letters, Volume 21, Issue 9, p. 404 –405
- DOI: 10.1049/el:19850287
- Type: Article
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We report InGaAsP buried-crescent lasers emitting at 1.3 μm with laser facets prepared by the stop-cleaving technique. Threshold currents as low as 34 mA and differential quantum efficiencies as high as 33% have been obtained. Our results are comparable to those obtained with conventionally cleaved wafers and proves the excellent quality of the cleaved facets utilising the stop-cleave technique.
Algorithms for fault identification in a diagnosable multiprocessor system
- Author(s): F. Lombardi
- Source: Electronics Letters, Volume 21, Issue 9, p. 405 –406
- DOI: 10.1049/el:19850288
- Type: Article
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–406
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In the letter, two algorithms for fault identification in diagnosable systems are presented. The order of time complexity for worst-case analysis is given: while the first algorithm executes in a sequential fashion in 0(n), where n is the number of units in the system, the second algorithm executes in 0(log2n) in a binary tree arrangement. The algorithms are applicable to a diagnostic model with no invalidation.
Low-temperature epitaxial growth of GaAs on (100) silicon substrates
- Author(s): A. Christou ; B.R. Wilkins ; W.F. Tseng
- Source: Electronics Letters, Volume 21, Issue 9, p. 406 –408
- DOI: 10.1049/el:19850289
- Type: Article
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MBE growth of GaAs on (100) silicon has been achieved at low substrate temperatures with and without an initial desorption of the silicon surface. An arsenic overpressure (5 × 10 −8 torr) is necessary for epitaxial growth. The films grown were intrinsic and were twinned in the [110] direction.
Novel approach to multiplexer simulation and sensitivity analysis
- Author(s): J.W. Bandler ; S. Daijavad ; Q.J. Zhang
- Source: Electronics Letters, Volume 21, Issue 9, p. 408 –409
- DOI: 10.1049/el:19850290
- Type: Article
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–409
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A novel approach to the simulation of multiplexer responses, which also results in the simple and direct evaluation of first-order sensitivities with respect to all variables of interest including frequency, is presented. Fundamental concepts that correspond to a general cascaded structure are utilised in the analysis.
Microwave PIN diodes for GaAs IC
- Author(s): R. Tayrani and M.I. Sobhy
- Source: Electronics Letters, Volume 21, Issue 9, p. 409 –411
- DOI: 10.1049/el:19850291
- Type: Article
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p.
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–411
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The letter describes the design and fabrication techniques for successful realisation of two types of GaAs PIN diodes which lend themselves to integration into GaAs ICs. PIN diodes with a new shallow trench structure exhibit superior microwave performance to the interdigitated structure.
GaAs saw-tooth superlattice light-emitting diode operating monochromatically at λ ≥ 0.9 μm
- Author(s): E.F. Schubert ; A. Fischer ; K. Ploog
- Source: Electronics Letters, Volume 21, Issue 9, p. 411 –412
- DOI: 10.1049/el:19850292
- Type: Article
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Edge-emitting diodes with a GaAs saw-tooth superlattice as the active region operating with high efficiency at 300 K are reported. The saw-tooth superlattice active region of the device consists of alternating n- and p-type Dirac-delta-doped GaAs layers grown by molecular beam epitaxy. The superlattice bandgap energy is lower than that of the GaAs host material. The new superlattice diode emits monochromatic light at wavelengths λ ≥ 0.9 μm.
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