Online ISSN
1350-911X
Print ISSN
0013-5194
Electronics Letters
Volume 21, Issue 8, 11 April 1985
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Volume 21, Issue 8
11 April 1985
Modulation of near-millimetre-wavelength radiation by magnetic fluids
- Author(s): J.R. Birch ; C.A. Bentley ; J.P. Llewellyn
- Source: Electronics Letters, Volume 21, Issue 8, p. 313 –314
- DOI: 10.1049/el:19850221
- Type: Article
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The results of some measurements on amplitude modulation of 94, 100 and 110 GHz radiation by a magneto-optical effect in a number of magnetic fluids are described. Modulation at frequencies up to 0.25 MHz has been observed, but this may not represent the intrinsic high-frequency cutoff of the effect. The effects of altering both the composition and the concentration of the magnetic fluid are described.
Guided-wave optical wavelength-division multi/demultiplexer using high-silica channel waveguides
- Author(s): M. Kawachi ; Y. Yamada ; M. Yasu ; M. Kobayashi
- Source: Electronics Letters, Volume 21, Issue 8, p. 314 –315
- DOI: 10.1049/el:19850222
- Type: Article
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A guided-wave optical waveguide-division multi/demultiplexer for bidirectional transmission at (0.81 μm, 1.2 μm)/(0.89 μm, 1.3 μm) wavelengths has been realised using high-silica channel waveguides on silicon substrate. The multi/demultiplexer connected with graded-index multi-mode fibres shows a loss of 3.5−5 dB together with far-end and near-end crosstalk levels less than −30 dB and −50 dB, respectively.
Optically activated vibrations in a micromachined silica structure
- Author(s): S. Venkatesh and B. Culshaw
- Source: Electronics Letters, Volume 21, Issue 8, p. 315 –317
- DOI: 10.1049/el:19850223
- Type: Article
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A microminiature bridge of silicon dioxide, fabricated using anisotropic etch techniques on a silicon substrate, has been set into mechanical vibration by direct interaction with a low-power laser beam. The displacement sensitivity and frequency response of the optomechanical interaction have been characterised using optical interferometry. The implications of the results for the development of radically new optical sensors are discussed.
Shear transverse waves on corrugated surface of rotated Y-cut quartz
- Author(s): Y.V. Gulyaev ; V.P. Plessky ; Y.A. Ten
- Source: Electronics Letters, Volume 21, Issue 8, p. 317 –318
- DOI: 10.1049/el:19850224
- Type: Article
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–318
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Bragg reflection of shear transverse waves on a periodically nonuniform surface with a sinusoidal relief of rotated Y-cut quartz has been considered. A dispersion equation has been obtained. For ST-quartz absorption coefficient, wave number, depth penetration coefficient, amplitude and phase of reflection coefficient have been computed.
CFAR problems in weibull clutter
- Author(s): T. Bucciarelli
- Source: Electronics Letters, Volume 21, Issue 8, p. 318 –319
- DOI: 10.1049/el:19850225
- Type: Article
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–319
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In high-resolution radars the constancy of the probability of false alarms (CFAR) is a difficult requirement, owing to the uncertainty of the clutter probability density function. The behaviour of an adaptive thresholding circuit is examined in Weibull assumptions, showing that a good CFAR can be obtained in a proper range of distribution shape factors.
400 Mbit/s transmission experiment using two monolithic optoelectronic chips
- Author(s): T. Horimatsu ; T. Iwama ; Y. Oikawa ; T. Touge ; O. Wada ; T. Nakagami
- Source: Electronics Letters, Volume 21, Issue 8, p. 319 –321
- DOI: 10.1049/el:19850226
- Type: Article
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A successful optical transmission experiment at 400 Mbit/s was carried out with two OEIC modules over 4 km with an optical power margin of 4 dB. The modules with monolithic LD/driver and PIN/amp ICs were fabricated by a new technique to realise compactness and stability.
Low-threshold operation of 1.54 μm InGaAsP/InP DFB laser with second-order grating
- Author(s): K. Wakao ; K. Kihara ; T. Tanahashi ; H. Sudo ; T. Kusunoki ; H. Tabuchi ; H. Ishikawa ; S. Isozumi ; S. Yamakoshi ; H. Imai
- Source: Electronics Letters, Volume 21, Issue 8, p. 321 –322
- DOI: 10.1049/el:19850227
- Type: Article
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–322
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Threshold current has been reduced to 22–35 mA for 1.54 μm InGaAsP/InP distributed feedback (DFB) lasers with second-order grating, and single-longitudinal-mode operation at an output power of 5 mW has been achieved up to 90°C.
Two-parameter characterisation of single-cladded, dispersion-shifted single-mode fibres
- Author(s): J.H. Povlsen
- Source: Electronics Letters, Volume 21, Issue 8, p. 322 –324
- DOI: 10.1049/el:19850228
- Type: Article
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It is shown with numerical examples that single-cladded, dispersion-shifted, single-mode fibres with arbitrary refractive-index profiles have spectral spot size and dispersion variations predictable from only two parameters. These are the Laplace spot-size value ωL and fibre dispersion value Mf specified at the wavelength λ = 1.55 μm.
High-performance index-guided phase-locked semiconductor laser arrays
- Author(s): Y. Twu ; K.-L. Chen ; A. Dienes ; S. Wang ; J.R. Whinnery
- Source: Electronics Letters, Volume 21, Issue 8, p. 324 –325
- DOI: 10.1049/el:19850229
- Type: Article
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Using strongly coupled index-guided ridge-waveguide structures and tailoring the gain distribution to the fundamental eigenmode intensity distribution in a five-element coupled laser array, we greatly improve the performance over previously reported results. A stable single-lobe far-field pattern has been observed up to nearly three times threshold. This result is achieved by nonuniform pumping, which tends to excite the fundamental array eigenmode only by preventing spatial hole burning, which causes the excitation of higher-order modes.
1.3 μm InGaAsP index-guided multirib waveguide laser array
- Author(s): N.K. Dutta ; T. Cella ; S.G. Napholtz ; D.C. Craft
- Source: Electronics Letters, Volume 21, Issue 8, p. 326 –327
- DOI: 10.1049/el:19850230
- Type: Article
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Phase-locked InGaAsP index-guided multirib waveguide laser arrays emitting at 1.3 μm have been fabricated. These devices have threshold currents in the range 400–500 mA at 30°C and have been operated to pulsed output powers as high as 400 mW. More than 100 mW of output power has been obtained up to an ambient temperature of 60°C. The lasers emit in multilongitudinal modes with a far-field divergence of 20° × 40°.
Lateral epitaxial overgrowth of silicon over recessed oxide
- Author(s): T.S. Jayadev ; E. Okazaki ; H. Petersen ; M. Millman
- Source: Electronics Letters, Volume 21, Issue 8, p. 327 –328
- DOI: 10.1049/el:19850231
- Type: Article
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–328
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There has been considerable interest in silicon-on-insulator (SOI) technology recently because of its potential applications in VLSI. CMOS circuits in SOI have higher speed because of the absence of substrate capacitance, and freedom from latch-up because of dielectric isolation. Recently, memory circuits like DRAMs have reached the physical limits of what is possible in two dimensions, and hence there is a growing need for 3-dimensional circuits. SOI offers a possible avenue to realise such 3-D circuits and thus lead the way to the next generation of memories and integrated circuits.
Double heterojunction GaAs/GaAlAs I2L inverter
- Author(s): P. Narozny and H. Beneking
- Source: Electronics Letters, Volume 21, Issue 8, p. 328 –329
- DOI: 10.1049/el:19850232
- Type: Article
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–329
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GaAs/GaAlAs double heterojunction I2L inverters with a vertical pnp current source were fabricated by ion implantation and Zn-diffusion into LPE structures. The current gain of the upside-down-operated double heterojunction npn transistor has been improved by a factor of two compared to the gain of the npn transistor of the otherwise similar structure. In addition, the wide-gap junction pnp transistor gives a solution to the critical switch-on problem which can occur when a wide-gap emitter transistor is used for the switching transistor.
Double heterostructure and multiquantum-well lasers at 1.5–1.7 μm grown by atmospheric pressure MOVPE
- Author(s): A.W. Nelson ; R.H. Moss ; J.C. Regnault ; P.C. Spurdens ; S. Wong
- Source: Electronics Letters, Volume 21, Issue 8, p. 329 –331
- DOI: 10.1049/el:19850233
- Type: Article
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–331
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The first successful growth and fabrication of GaInAs/InP MQW and CW GaInAsP DH lasers by atmospheric pressure MOVPE is reported. Room-temperature CW operation of DH lasers was obtained by using the ridge-waveguide laser design, and threshold currents as low as 53 mA were measured. MQW lasers, which also operated at room temperature, were fabricated, and emission spectra obtained from these devices showed a clear spectral narrowing compared with the DH lasers together with a wavelength shift, in good agreement with theoretical predictions.
Quasistatic analysis of a dynamic sense amplifier
- Author(s): G.S. Visweswaran ; N.K. Jain ; A.B. Bhattacharyya
- Source: Electronics Letters, Volume 21, Issue 8, p. 331 –332
- DOI: 10.1049/el:19850234
- Type: Article
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Quasistatic analysis of a dynamic sense amplifier has been carried out to analyse the initial conditions. As a result of the analysis we obtain a relationship between the hold time and the storage capacitance and also the minimum storage capacitance required to facilitate proper latching for a fixed threshold voltage difference between the latching transistors.
Rigorous and approximate calculations of antireflection layer parameters for travelling-wave diode laser amplifiers
- Author(s): C. Vassallo
- Source: Electronics Letters, Volume 21, Issue 8, p. 333 –334
- DOI: 10.1049/el:19850235
- Type: Article
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p.
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An integral equation method is used for an accurate numerical analysis of antireflection layers for travelling-wave diode laser amplifiers. Its results are compared with those of various approximate analyses; a new practical approximation is proposed.
Spatial resolution of coherent ALOHA collision sources
- Author(s): J.Y.C. Cheah and F.J. Paoloni
- Source: Electronics Letters, Volume 21, Issue 8, p. 334 –336
- DOI: 10.1049/el:19850236
- Type: Article
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–336
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The letter describes a simple spatial resolution method of coherent signal sources on collision access to a central hub receiver in a radio ALOHA network. The extra hardware investment in this approach allows an additional degree of freedom in the random access protocol.
Testability enhancement of domino CMOS logic
- Author(s): J.A. Pretorius ; A.S. Shubat ; C.A.T. Salama
- Source: Electronics Letters, Volume 21, Issue 8, p. 336 –337
- DOI: 10.1049/el:19850237
- Type: Article
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–337
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A simple circuit technique to enhance the testability of domino CMOS circuits is presented. The fact that domino CMOS gates always have their outputs precharged low enables one to test for output stuck-at-one faults by a simple modification of the domino gate.
Improved high-power twin-channel laser with blocking layer
- Author(s): C.B. Morrison ; L.M. Zinkiewicz ; A. Burghard ; L. Figueroa
- Source: Electronics Letters, Volume 21, Issue 8, p. 337 –338
- DOI: 10.1049/el:19850238
- Type: Article
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–338
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We present an improved version of the twin-channel laser as a prototype for a new concept in semiconductor laser array structures with a well controlled far-field beam pattern. The laser device constitutes the first CW semiconductor laser array structure on a p-type GaAs substrate using current-blocking layers and yields improved current utilisation and efficiency over previous structures.
Electroabsorption on room-temperature excitons in InGaAs/InGaAlAs multiple quantum-well structures
- Author(s): K. Wakita ; Y. Kawamura ; Y. Yoshikuni ; H. Asahi
- Source: Electronics Letters, Volume 21, Issue 8, p. 338 –340
- DOI: 10.1049/el:19850239
- Type: Article
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–340
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Large optical absorption changes are observed in InGaAs/InGaAlAs multiple quantum wells when an electric field is applied perpendicular to the wells for incident light both parallel and perpendicular to the MQW layers. Polarisation-related absorption spectra are also investigated.
Numerical solution of silicon-clad diffused planar optical waveguides
- Author(s): M. Koshiba ; H. Kumagami ; M. Suzuki
- Source: Electronics Letters, Volume 21, Issue 8, p. 340 –341
- DOI: 10.1049/el:19850240
- Type: Article
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Computer modelling studies indicate that silicon-clad diffused planar optical waveguides exhibit a damped periodic oscillation in their attenuation and phase constant curves and that the attenuation is reduced significantly by reducing the maximum index change.
Fast Hartley transform algorithm
- Author(s): H.-J. Meckelburg and D. Lipka
- Source: Electronics Letters, Volume 21, Issue 8, p. 341 –343
- DOI: 10.1049/el:19850241
- Type: Article
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The discrete Hartley transform is a new tool for the analysis, design and implementation of digital signal processing algorithms and systems. It is strictly symmetrical concerning the transformation and its inverse. A new fast Hartley transform algorithm has been developed. Applied to real signals, it is faster than a real fast Fourier transform, especially in the case of the inverse transformation. The speed of operation for a fast convolution can thus be increased.
Fast algorithm for calculation of radiation integral and its application to plane-polar near-field/far-field transformation
- Author(s): J.C. Bennett
- Source: Electronics Letters, Volume 21, Issue 8, p. 343 –344
- DOI: 10.1049/el:19850242
- Type: Article
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An efficient algorithm for calculation of the radiation integral is described. The process is presented in the form of a crosscorrelation which is carried out by utilising the fast Fourier transform. Applications to a plane-polar geometry and to the reflector antenna are considered and the results of simulations are presented as validation of the process.
Tunnelling through very low barriers
- Author(s): P. Guéret ; U. Kaufmann ; E. Marclay
- Source: Electronics Letters, Volume 21, Issue 8, p. 344 –346
- DOI: 10.1049/el:19850243
- Type: Article
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Tunnelling through very low barriers made with GaAs/Ga1−xAlxAs/GaAs heterostructures is investigated. The lowest barrier has a height of 40 meV and a thickness of about 450 Å. Reasonable agreement between design parameters, measured data and theoretical values is obtained.
Heterojunction phototransistors on n-channelled semi-insulating InP substrates
- Author(s): U. Koren ; T.C. Penna ; P.K. Tien
- Source: Electronics Letters, Volume 21, Issue 8, p. 346 –347
- DOI: 10.1049/el:19850244
- Type: Article
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A new method to fabricate planar n-channelled semi-insulating (SI) InP substrate is demonstrated. Etched channels on semi-insulating substrates are filled with n-type InP crystal grown by liquid-phase epitaxy (LPE). The resulting wafers are polished again to obtain n-type channels that are periodically embedded in the semi-insulating repolished substrates. The use and application of this technique for bipolar devices on SI substrates is demonstrated by fabricating heterojunction phototransistors with LPE regrowth on these substrates.
Single-lobe symmetric coupled laser arrays
- Author(s): K.-L. Chen and S. Wang
- Source: Electronics Letters, Volume 21, Issue 8, p. 347 –349
- DOI: 10.1049/el:19850245
- Type: Article
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We propose a new high-power laser in which an array of N lasers is coupled to another of N + 1 lasers through Y-junctions. The field distributions of the eigenmodes in the N-array are identical to those of the supermodes in the evanescently coupled laser array. The threshold gain for the lowest-order mode is much lower than the higher-order modes. This strong mode discrimination will enable very high-power single-lobe operation.
Operation of gyrotron oscillator with beam current unrestricted by cathode temperature
- Author(s): C.J. Edgcombe and J.A.C. Stenton
- Source: Electronics Letters, Volume 21, Issue 8, p. 349 –350
- DOI: 10.1049/el:19850246
- Type: Article
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A gyrotron oscillator has been run at 65 GHz with the beam current controlled by the anode voltage rather than by cathode temperature. The generated RF power increased to about 108 kW after modification of the electrons' transverse velocity at interaction.
Current/voltage characteristic of CuInSe2 homojunctions
- Author(s): I. Shih and C.X. Qiu
- Source: Electronics Letters, Volume 21, Issue 8, p. 350 –351
- DOI: 10.1049/el:19850247
- Type: Article
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Temperature-dependent forward-current/voltage characteristics of In- and Bi-diffused CuInSe2 homojunctions have been investigated over a temperature range from 200 to 300 K. It has been found that the junction current in the medium voltage range was dominated by the recombination mechanism in the depletion region. The activation energy of saturation current was about 0.95 eV, which is consistent with the energy gap value of crystalline CuInSe2.
Single-longitudinal-mode condition for DFB lasers
- Author(s): G. Motosugi ; Y. Yoshikuni ; T. Ikegami
- Source: Electronics Letters, Volume 21, Issue 8, p. 352 –353
- DOI: 10.1049/el:19850248
- Type: Article
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–353
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We show theoretically that the loss difference of about 10% is required between the main mode and the side mode for a semiconductor laser to oscillate in single-longitudinal mode. The DFB laser has been found to meet this requirement, and a side-mode suppression of more than 30 dB was observed under high-speed direct modulation.
Spectral linewidth of a grecc laser with added external cavity
- Author(s): K.-Y. Liou and C.A. Burrus
- Source: Electronics Letters, Volume 21, Issue 8, p. 353 –354
- DOI: 10.1049/el:19850249
- Type: Article
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We report the measured linewidth of a single-frequency graded-index-rod external-coupled-cavity (GRECC) laser and the linewidth narrowing observed with an added 35 cm external cavity, and the demonstration of an experimental self-heterodyne envelope detection system using a free-running GRECC laser and amplitude modulation.
Self-aligned MESFETs by a dual-level double-lift-off substitutional gate (DDS) technique for high-speed low-power GaAs ICs
- Author(s): M.F. Chang ; F.J. Ryan ; R.P. Vahrenkamp ; C.G. Kirkpatrick
- Source: Electronics Letters, Volume 21, Issue 8, p. 354 –356
- DOI: 10.1049/el:19850250
- Type: Article
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A new self-aligned substitutional gate processing technique which involves dual-level resist patterning was developed for 75 mm (3 in)-diameter GaAs MESFETs IC fabrication. The transconductance of 1 μm gate length DDS E-MESFETs reached a maximum value of 280 mS/mm. E/R ring oscillators showed a 22 ps/gate propagation delay and a 34.5 fJ speed-power product. E/D ring oscillators had a 53 ps/gate propagation delay, a 12.5 fJ speed-power product and a power dissipation of 0.24 mW/gate at 300 K.
Microstrip planar arrays with dielectric sphere overlays
- Author(s): C.M. Hall ; G. Andrasic ; J.R. James
- Source: Electronics Letters, Volume 21, Issue 8, p. 356 –357
- DOI: 10.1049/el:19850251
- Type: Article
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A novel combination of a microstrip patch and dielectric sphere is described. Measurements and analysis illustrate the basic action and the use of this new element in a millimetre-wave array. Improved radiation pattern control and sparse deployment of elements, at a cost of some increase in antenna depth and constructional detail, are the main features identified.
Hybrid VLSI architecture of FIR filters using residue number systems
- Author(s): M.A. Bayoumi ; G.A. Jullien ; W.C. Miller
- Source: Electronics Letters, Volume 21, Issue 8, p. 358 –359
- DOI: 10.1049/el:19850252
- Type: Article
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An efficient VLSI architecture of FIR filters based on large moduli set is described. The structure is hybrid, combining both binary-based elements and look-up tables. The binary-based section is arranged as a two-dimensional systolic array using only one cell type.
Erratum: Double-flame VAD process for high-rate optical preform fabrication
- Author(s): H. Suda ; S. Shibata ; M. Nakahara
- Source: Electronics Letters, Volume 21, Issue 8, page: 359 –359
- DOI: 10.1049/el:19850253
- Type: Article
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Erratum: Direct streak-camera observation of picosecond gain-switched optical pulses from a 1.5 μm semiconductor laser
- Author(s): I.H. White ; D.F.G. Gallagher ; M. Osiński
- Source: Electronics Letters, Volume 21, Issue 8, page: 359 –359
- DOI: 10.1049/el:19850254
- Type: Article
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Erratum: Observation of second-harmonic generation from a Langmuir-Blodgett monolayer of a merocyanine dye
- Author(s): I.R. Girling ; N.A. Cade ; P.V. Kolinsky ; C.M. Montgomery
- Source: Electronics Letters, Volume 21, Issue 8, page: 359 –359
- DOI: 10.1049/el:19850255
- Type: Article
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Erratum: Direct frequency modulation of a semiconductor laser by acoustic waves
- Author(s): P.A. Greenhalgh and P.A. Davies
- Source: Electronics Letters, Volume 21, Issue 8, page: 359 –359
- DOI: 10.1049/el:19850256
- Type: Article
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