Online ISSN
1350-911X
Print ISSN
0013-5194
Electronics Letters
Volume 21, Issue 2, 17 January 1985
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Volume 21, Issue 2
17 January 1985
Microstrip antenna aperture-coupled to a microstripline
- Author(s): D.M. Pozar
- Source: Electronics Letters, Volume 21, Issue 2, p. 49 –50
- DOI: 10.1049/el:19850034
- Type: Article
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–50
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A new technique for feeding printed antennas is described. A microstrip antenna on one substrate is coupled to a microstripline feed on another parallel substrate through an aperture in the ground plane which separates the two substrates. A simple theory explaining the coupling mechanism is presented, as well as measurements of a prototype aperture-fed antenna.
Fault detection and identification for reliable large-scale computing
- Author(s): F. Lombardi
- Source: Electronics Letters, Volume 21, Issue 2, p. 50 –52
- DOI: 10.1049/el:19850035
- Type: Article
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In the letter, the analysis of a new technique for fault-tolerant computing is presented. This technique is applicable to systems with a large number of modules which require the simultaneous and reliable execution of multiple jobs.
Optical polarisation control utilising an optical heterodyne detection scheme
- Author(s): T. Imai ; K. Nosu ; H. Yamaguchi
- Source: Electronics Letters, Volume 21, Issue 2, p. 52 –53
- DOI: 10.1049/el:19850036
- Type: Article
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–53
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An optical polarisation control scheme utilising optical heterodyne detection for coherent transmission is proposed and demonstrated at a wavelength of 1.5 μm. It converts an arbitrary polarisation state to a linear state at a received optical power level of less than −70 dBm.
Measured spectral linewidth of variable-gap cleaved-coupled-cavity lasers
- Author(s): T.P. Lee ; C.A. Burrus ; D.P. Wilt
- Source: Electronics Letters, Volume 21, Issue 2, p. 53 –54
- DOI: 10.1049/el:19850037
- Type: Article
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–54
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A variable-airgap 1.3 μm C3 semiconductor laser with the gap width set for optimum mode-suppression ratio (5000:1) has been used to achieve a measured linewidth of only 1 MHz at 3 mW power output and 250 kHz at 10 mW.
Low threshold current operation of vapour-grown 650 nm-band InGaAsP/InGaP DH lasers
- Author(s): A. Usui ; T. Matsumoto ; M. Inai ; I. Mito ; K. Kobayashi ; H. Watanbe
- Source: Electronics Letters, Volume 21, Issue 2, p. 54 –56
- DOI: 10.1049/el:19850038
- Type: Article
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–56
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InGaAsP/InGaP double heterojunction lasers emitting in the 650 nm band have been fabricated on GaAs0.61P0.39 substrates by hydride vapour-phase epitaxy. By optimising growth conditions and device structure, a threshold current density as low as 5.6 kA/cm2 is obtained, and CW operation is achieved up to −27° C.
Optical processing technique for spot-size measurements in single-mode fibres
- Author(s): R. Caponi ; G. Coppa ; P. Di Vita ; U. Rossi
- Source: Electronics Letters, Volume 21, Issue 2, p. 56 –57
- DOI: 10.1049/el:19850039
- Type: Article
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–57
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A new, simple and very promising technique for spot-size measurements in single-mode fibres is proposed, based on a spatial filter which modulates the optical beam at the output of the fibre. Its inherent simplicity, accuracy and high efficiency make it attractive for laboratory and factory measurements.
Band-to-band Auger processes in 0.95 eV bandgap (λ=1.3 μm) (AlxGa1−x)0.48In0.52As lattice matched to InP
- Author(s): W. Bardyszewski and D. Yevick
- Source: Electronics Letters, Volume 21, Issue 2, p. 58 –59
- DOI: 10.1049/el:19850040
- Type: Article
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–59
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We calculate the temperature dependence of the CHSH and CHCC pure collision and photon-assisted Auger coefficients for highly excited Al0.13Ga0.35In0.52As (λ=1.3 μm). Our method incorporates refined kp wavefunction overlap integrals, spectral density functions and integration techniques. The predicted room-temperature AlGaInAs Auger coefficient is slightly smaller than that of 1.3 μm InGaAsP.
Tunnel diode theory
- Author(s): P.T. Landsberg and M.S. Abrahams
- Source: Electronics Letters, Volume 21, Issue 2, p. 59 –60
- DOI: 10.1049/el:19850041
- Type: Article
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An exact current/voltage relation on the basis of the conventional tunnel diode model is derived. The characteristics usually given are approximate, and the differences are illustrated graphically. The approximate evaluation of the characteristic is liable to lead to errors. This is illustrated by reference to recent work.
InGaAsP/InP double heterostructure lasers grown by atmospheric-pressure MOCVD
- Author(s): R.D. Dupuis ; H. Temkin ; L.C. Hopkins
- Source: Electronics Letters, Volume 21, Issue 2, p. 60 –62
- DOI: 10.1049/el:19850042
- Type: Article
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Room-temperature operation of InGaAsP-InP double-heterostructure lasers grown by atmospheric pressure metalorganic chemical vapour deposition is reported. Optically pumped laser operation at 1.36 μm and 1.45 μm has been achieved and broad-area injection lasers operating at 1.37 μm with threshold current densities as low as 3.6 kA/cm2 have been demonstrated.
Etched-mirror unstable-resonator semiconductor lasers
- Author(s): R.R. Craig ; L.W. Casperson ; O.M. Stafsudd ; J.J.J. Yang ; G.A. Evans ; R.A. Davidheiser
- Source: Electronics Letters, Volume 21, Issue 2, p. 62 –63
- DOI: 10.1049/el:19850043
- Type: Article
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–63
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The operation and performance of the first etched-mirror high-loss (ray unstable) semiconductor diode lasers are reported and discussed. This is an alternate approach to conventional plane-parallel stripe geometry diode lasers or monolithic laser arrays for obtaining improved mode control and higher power.
Wide range wavelength tuning in 1.3 μm DBR-DC-PBH-LDs by current injection into the DBR region
- Author(s): M. Yamaguchi ; M. Kitamura ; S. Murata ; I. Mito ; K. Kobayashi
- Source: Electronics Letters, Volume 21, Issue 2, p. 63 –65
- DOI: 10.1049/el:19850044
- Type: Article
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63
–65
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Wide range wavelength tuning by controlling the Bragg wavelength electrically was demonstrated for the first time in a newly developed 1.3 μm distributed Bragg reflector double channel planar buried heterostructure laser diode (DBR-DC-PBH LD). Lasing wavelength was tuned over 40 Å with 60 mA tuning current change, maintaining single longitudinal mode (SLM).
Microprocessor-based phase determination for high-resolution optical sensors
- Author(s): A. Bertholds and R. Dändliker
- Source: Electronics Letters, Volume 21, Issue 2, p. 65 –67
- DOI: 10.1049/el:19850045
- Type: Article
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A microprocessor-controlled phase measuring system for high-resolution optical sensors is described. An automatic calibration procedure provides drift compensation and long-term accuracy. Using a 12 bit A/D convertor, phase interpolation with a resolution of 0.12° (∼1/3000 of a period) is demonstrated.
Group parity prediction scheme for concurrent testing of linear feedback shift registers
- Author(s): N.S. Vasanthavada
- Source: Electronics Letters, Volume 21, Issue 2, p. 67 –68
- DOI: 10.1049/el:19850046
- Type: Article
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–68
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A group parity prediction scheme which can be used for concurrent testing of linear feedback shift register circuits is described.
Attenuation in melting snow on microwave- and millimetre-wave terrestrial radio links
- Author(s): Y.M. Jain and P.A. Watson
- Source: Electronics Letters, Volume 21, Issue 2, p. 68 –69
- DOI: 10.1049/el:19850047
- Type: Article
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The scattering properties of melting snow on microwave and millimetre-wave terrestrial radio links are predicted using a new model for melting which includes coalescence. Attenuation, differential attenuation and differential phase are calculated for a horizontal path, with results at 36.25 GHz presented. Peak specific attenuation in the range 8–13 dB/km is expected for underspread rain with 10–15 mm/h rain rates.
Modelling DC characteristics of HEMTs
- Author(s): M.T. Abuelma'atti
- Source: Electronics Letters, Volume 21, Issue 2, p. 69 –70
- DOI: 10.1049/el:19850048
- Type: Article
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–70
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A simple empirical equation is presented to relate the drain current to drain-source and gate-source voltages of the high electron mobility transistors (HEMTs). This equation covers the entire ID/VDS characteristics. The accuracy of this equation is better than the theoretically developed separate equations.
Hydrogen-induced loss increases in germanium-doped single-mode optical fibres: long-term predictions
- Author(s): A. Tomita and P.J. Lemaire
- Source: Electronics Letters, Volume 21, Issue 2, p. 71 –72
- DOI: 10.1049/el:19850049
- Type: Article
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–72
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A spectrally broad loss increase occurs in GeO2-doped optical fibres exposed to hydrogen at elevated temperatures. This is the primary H2-induced loss mechanism in GeO2-doped single-mode fibres for temperatures above 20 C. Loss increases at 1.3 and 1.55 μm are predicted to be less than 0.01 dB km after 20 years.
Four quadrant multiplier core with lateral bipolar transistor in CMOS technology
- Author(s): Z. Hong and H. Melchior
- Source: Electronics Letters, Volume 21, Issue 2, p. 72 –74
- DOI: 10.1049/el:19850050
- Type: Article
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A four quadrant multiplier core using lateral bipolar transistor in CMOS technology has been fabricated, tested and analysed. It has a high precision of linearity (with an error smaller than 2% for inputs over half of the power supply voltages), small offset of a few millivolts at the inputs, a small output offset of about 1.5 mV and a small dissipation.
ADPCM using vector predictor and forward adaptive quantiser with step-size prediction
- Author(s): K.H.J. Wong and R. Steele
- Source: Electronics Letters, Volume 21, Issue 2, p. 74 –75
- DOI: 10.1049/el:19850051
- Type: Article
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An adaptive differential pulse code modulation (ADPCM) system is described having a set of fixed vector predictors, and a quantiser that is adapted in the forward direction with the distinction that its step size is predicted from previous values. SNR gains compared to DPCM-AQF are presented for bit rates of 16, 24 and 32 kbit/s.
Polarisation splitters and birefringent couplers
- Author(s): A.W. Snyder and A. Stevenson
- Source: Electronics Letters, Volume 21, Issue 2, p. 75 –77
- DOI: 10.1049/el:19850052
- Type: Article
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The theoretical principles for understanding polarisation splitters are presented along with design parameters for their practical realisation. Birefringent couplers, with nonparallel optical axes are also described by deriving the modes of the composite anisotropic fibre system.
Photochemical vapour deposition of phosphorus nitride using an ArF excimer laser
- Author(s): Y. Hirota and O. Mikami
- Source: Electronics Letters, Volume 21, Issue 2, p. 77 –78
- DOI: 10.1049/el:19850053
- Type: Article
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–78
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The photochemical deposition of phosphorus nitride film on InP substrates using an ArF excimer laser (wavelength = 193 nm) to decompose a mixture of PH3-NH3 gases and synthesise the film is presented. The deposition temperature can be reduced from 480°C used in the thermal-CVD technique to 300°C. The film deposited photochemically exhibits a much larger resistivity and lower leakage current than that obtained by the thermal-CVD technique at 300°C. The minimum interface state density measured by C/V curves is 1012 eV−l cm−2 at (Ec − 0.3) eV.
Synthesis of highpass switched-capacitor LDI filters
- Author(s): H. Baher
- Source: Electronics Letters, Volume 21, Issue 2, p. 79 –80
- DOI: 10.1049/el:19850054
- Type: Article
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Exact techniques are given for the design of highpass LDI switched-capacitor ladder filters. The filters have no lumped counterparts and cannot be obtained from a lumped prototype by a transformation. Only stray-insensitive circuits are employed in the realisation, and the filters retain the lowsensitivity properties of a passive (distributed) prototype function.
Frequency chirp reduction in a 2.2 Gbit/s directly modulated InGaAsP semiconductor laser by CW injection
- Author(s): C. Lin ; J.K. Andersen ; F. Mengel
- Source: Electronics Letters, Volume 21, Issue 2, p. 80 –81
- DOI: 10.1049/el:19850055
- Type: Article
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–81
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Longitudinal-mode linewidth broadening due to frequency chirping in a high-speed modulated InGaAsP laser transmitter is reduced by CW injection of a master laser with a matched longitudinal mode. Biased below threshold and modulated with RZ format 2.2 Gbit/s current pulses, the transmitter laser's frequency chirp can be reduced at the expense of a small pulsewidth increase and on/off ratio reduction.
Loss and mechanical strength of splices
- Author(s): A.K. Das and S. Bhattacharyya
- Source: Electronics Letters, Volume 21, Issue 2, p. 81 –83
- DOI: 10.1049/el:19850056
- Type: Article
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–83
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In arc heating the strength and losses of splices as a function of fusion time and the pressure applied between the fibres for single-mode and multimode graded index fibres are obtained, operating at critical conditions of splicing. Average loss of splices 0.3, 0.15 and 0.02 dB for 5, 10 and 50 μm core diameters, respectively, are found. A compromise between strength and fusion time is made.
Optical time domain reflectometer using a photon-counting InGaAs/InP avalanche photodiode at 1.3 μm
- Author(s): B.F. Levine ; C.G. Bethea ; L.G. Cohen ; J.C. Campbell ; G.D. Morris
- Source: Electronics Letters, Volume 21, Issue 2, p. 83 –84
- DOI: 10.1049/el:19850057
- Type: Article
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We report the first photon-counting optical time domain reflectometer using an InGaAsInP avalanche photodiode. The measured sensitivity at a temperature of −40°C is comparable to that of the best present conventional PINFET receiver results.
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