Online ISSN
1350-911X
Print ISSN
0013-5194
Electronics Letters
Volume 21, Issue 1, 3 January 1985
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Volume 21, Issue 1
3 January 1985
Synthesis of bandlimited signals with independent amplitude and phase modulation
- Author(s): L.B. Lopes
- Source: Electronics Letters, Volume 21, Issue 1, p. 1 –2
- DOI: 10.1049/el:19850001
- Type: Article
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The synthesis of a bandpass bandlimited signal with independent AM and PM channels is considered, where the bandwidth of each of the two information signals is required to be less than or equal to half the bandwidth of the bandpass signal. A simple iterative algorithm for generation of the bandpass signal is proposed, and sample results are presented. It is shown that this approach may be useful in simultaneous amplitude phase transmission systems even when the number of iterations is small.
Hot-electron noise limitations in submillimetre-wave Schottky-barrier mixer diodes
- Author(s): N.J. Keen
- Source: Electronics Letters, Volume 21, Issue 1, p. 2 –3
- DOI: 10.1049/el:19850002
- Type: Article
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The noise from small-area platinum gallium-arsenide Schottky-barrier mixer diodes has been measured at 4 GHz, to compare high-field (hot-electron) noise in diodes with different doping densities and anode areas. In the present state of technology, submillmmetre-wavelength mixer diodes should be fabricated from gallium arsenide with a doping density of about 1017 cm−3.
Novel measurement method for axial residual stress in optical fibre
- Author(s): T. Abe ; Y. Mitsunaga ; H. Koga
- Source: Electronics Letters, Volume 21, Issue 1, p. 4 –5
- DOI: 10.1049/el:19850003
- Type: Article
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A novel method for measuring axial residual stress in optical fibre is presented. It is shown that axial residual stress profiles can be reconstructed from optical retardation data measured for several orientations of a fibre. Using this method, the axial stress profile in polarisation-maintaining fibre has been clarified.
Observation of modal noise in single-mode-fibre transmission systems
- Author(s): N.K. Cheung ; A. Tomita ; P.F. Glodis
- Source: Electronics Letters, Volume 21, Issue 1, p. 5 –7
- DOI: 10.1049/el:19850004
- Type: Article
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Modal noise has been observed in overmoded short fibre sections and transmitter pigtails resulting in performance degradation in a single-mode-fibre transmission system. The power penalty becomes negligible when the fibre is sufficiently long or is deployed with a bend to sufficiently attenuate the LP11 mode.
Flexible regenerator for digital transmission systems
- Author(s): L. Bickers
- Source: Electronics Letters, Volume 21, Issue 1, p. 7 –8
- DOI: 10.1049/el:19850005
- Type: Article
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The concept of a flexible regenerator employing multiple frequency timing recovery is presented. Results are given for two possible types of multiple passband timing recovery filters—narrowband-narrowband and narrowband-wideband. In both cases, results show that the regenerator can be retimed using either passband without significant degradation due to the proximity and bandwidth of the redundant passband.
Linearisation of microwave power amplifiers using active feedback networks
- Author(s): F. Perez ; E. Ballesteros ; J. Perez
- Source: Electronics Letters, Volume 21, Issue 1, p. 9 –10
- DOI: 10.1049/el:19850006
- Type: Article
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A new technique for linearising microwave power amplifiers is presented. Analytical and experimental results show that the intermodulation distortion in power amplifiers can be seriously reduced when active feedback networks are employed.
Frequency scaling of depolarisation at centimetre and millimetre waves
- Author(s): H. Fukuchi ; J. Awaka ; T. Oguchi
- Source: Electronics Letters, Volume 21, Issue 1, p. 10 –11
- DOI: 10.1049/el:19850007
- Type: Article
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A frequency scaling relation for the prediction of depolarisation statistics at centimetre and millimetre waves is derived by calculating the forward-scattering amplitudes of the Pruppacher-Pitter type raindrops at 33 frequencies from 3 to 40 GHz. The dependence of the frequency scaling relation on raindrop-size distributions is also discussed.
GaAlAs semiconductor diode laser 4-ary frequency shift key modulation at 100 Mbit/s
- Author(s): D. Welford and S.B. Alexander
- Source: Electronics Letters, Volume 21, Issue 1, p. 12 –13
- DOI: 10.1049/el:19850008
- Type: Article
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4-ary FSK modulation of a semiconductor diode laser by injection current modulation has been demonstrated at a rate of 100 Mbit/s. The injection current modulator has a modular design which allows expansion to M-ary FSK with independent control of each tone frequency. The design allows considerable flexibility in the logical relationship between the source data and the selected frequency tones.
Contact resistance of silicon-polysilicon interconnection for different current-flow geometries
- Author(s): A.J. Walton ; R. Holwill ; J.M. Robertson
- Source: Electronics Letters, Volume 21, Issue 1, p. 13 –14
- DOI: 10.1049/el:19850009
- Type: Article
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The relationship between contact window dimensions, specific contact resistivity ρc and sheet resistance on contact resistance has been investigated for different current-flow geometries. It is shown that as the window size is reduced, ρc starts to become the dominant factor giving contact resistances independent of the direction of current flow.
Comment: Active-RC-circuit synthesis for the simulation of a grounded inductor
- Author(s): N.C. Hekimian
- Source: Electronics Letters, Volume 21, Issue 1, page: 15 –15
- DOI: 10.1049/el:19850010
- Type: Article
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Reply: Active-RC-circuit synthesis for the simulation of a grounded inductor
- Author(s): W.S. Chung and K. Watanabe
- Source: Electronics Letters, Volume 21, Issue 1, page: 15 –15
- DOI: 10.1049/el:19850011
- Type: Article
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Fictitious potential for 3-D magnetic flux plots
- Author(s): S.R.H. Hoole
- Source: Electronics Letters, Volume 21, Issue 1, p. 15 –16
- DOI: 10.1049/el:19850012
- Type: Article
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A new convenient method of showing 3-D magnetic flux lines on a plane is presented. It reduces a cross-section to an equivalent 2-D plane and thereafter treats it as one would a 2-D vector potential problem.
New technique for measuring small MOS gate currents
- Author(s): M. Garrigues and A. Pavlin
- Source: Electronics Letters, Volume 21, Issue 1, p. 16 –17
- DOI: 10.1049/el:19850013
- Type: Article
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A new technique is presented for the measurement of small gate currents on MOSFET devices in noisy environments. Hybrid technology is used to build the equivalent of a double-gate FAMOS-type device using two conventional MOSFET devices. Measurements of substrate hot-electron currents are given as an example.
400 Mbit/s CMI transmission experiment using a 1.3 μm LED
- Author(s): K. Hagishima and J. Yamada
- Source: Electronics Letters, Volume 21, Issue 1, p. 17 –18
- DOI: 10.1049/el:19850014
- Type: Article
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A 400 Mbit/s CMI optical transmission experiment has been successfully conducted, using an LED, a GI multimode fibre and a 250 MHz bandwidth monolithic equalising amplifier. In this experiment, 5 km transmission distance has been achieved. The transmission characteristics and required transmission bandwidth are reported.
New method for polarisation alignment of birefringent fibre with laser diode
- Author(s): Y. Ida ; K. Hayashi ; M. Jinno ; T. Horii ; K. Arai
- Source: Electronics Letters, Volume 21, Issue 1, p. 18 –20
- DOI: 10.1049/el:19850015
- Type: Article
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A new simple technique for aligning the polarisation of a laser diode with the principal axis of a birefringent fibre is described. The angular error of alignment is restricted by the crosstalk of the fibre and the extinction ratio of the polariser, analyser used.
General solution for single-layer electromagnetic-wave absorber
- Author(s): A. Fernandez and A. Valenzuela
- Source: Electronics Letters, Volume 21, Issue 1, p. 20 –21
- DOI: 10.1049/el:19850016
- Type: Article
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A general solution for perfect absorption under normal incidence in a single-layer homogeneous absorber backed by a perfect conductor is derived considering both electric and magnetic losses. Design curves and equations are given for the lowest-order or minimum-thickness solutions, and its possible use in the design and fabrication of practical absorbing materials is also illustrated.
Physical significance of scaling factor used in transport expressions of polycrystalline silicon
- Author(s): S.N. Singh ; P.K. Singh ; R. Kishore
- Source: Electronics Letters, Volume 21, Issue 1, p. 21 –22
- DOI: 10.1049/el:19850017
- Type: Article
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The letter discusses the physical significance of the scaling factor S used by many workers in mobility and resistivity expressions for polycrystalline silicon to fit experimental data into their theories. It has been found that the need for this factor arises if the effect of the diffusion mechanism in controlling the majority carriers transport is ignored in preference to thermionic emission mechanism. In general, S<1, and its values of less than unity show that the current transport across the potential barrier is essentially limited by the diffusion mechanism.
Target decomposition theorems in radar scattering
- Author(s): S.R. Cloude
- Source: Electronics Letters, Volume 21, Issue 1, p. 22 –24
- DOI: 10.1049/el:19850018
- Type: Article
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By converting the coherent scattering matrix into a target vector, the concept of a coherency matrix may be introduced for characterising statistical scattering problems involving polarised waves. This technique is compared with the more conventional Mueller matrix formalism and a unique decomposition theorem developed for modelling dynamic scattering problems.
Temperature-dependent characteristics of MBE-grown GaAs p+-v-p+-v-n+ regenerative switching device
- Author(s): C.Y. Chang ; Y.H. Wang ; W.C. Liu ; S.A. Liao
- Source: Electronics Letters, Volume 21, Issue 1, p. 24 –25
- DOI: 10.1049/el:19850019
- Type: Article
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The thick GaAs p+-v-p+-v-n+ regenerative switching diode was fabricated by the MBE technique on n+-GaAs substrate. Temperature-dependent operational parameters, including switching voltage VS, switching current IS, holding voltage VH and holding current I, were investigated. It is found that VS, VH and IH decrease from 19 V, 3.6 V and 1.2 mA to 10.2 V, 2 V and 130 μA, respectively, with decreasing measurement temperature from room temperature to 77 K, while IS increases from 5 μA to 45 μA. However, VS takes a more complicated ‘M’-shape characteristic from 77 K to 323 K which indicates a more complicated transport mechanism.
Calculation of mixing in nonlinear circuits
- Author(s): G.J. Rees
- Source: Electronics Letters, Volume 21, Issue 1, p. 25 –26
- DOI: 10.1049/el:19850020
- Type: Article
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A novel scheme is described for calculating the harmonic response of a nonlinear circuit driven by two or more signals incommensurate in frequency. The method, which is a natural extension of the harmonic balance technique, is not limited by the degree of nonlinearity or signal strengths nor by their proximity in frequency.
All optical multiple-quantum-well waveguide switch
- Author(s): P. li Kam Wa ; J.E. Sitch ; N.J. Mason ; J.S. Roberts ; P.N. Robson
- Source: Electronics Letters, Volume 21, Issue 1, p. 26 –28
- DOI: 10.1049/el:19850021
- Type: Article
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By increasing the input light intensity to a GaAs/GaAlAs multiple-quantum-well waveguide, an induced phase shift of up to π radians has been detected. Partial switching of light between two such coupled waveguides by variation of the input light intensity has been observed for the first time.
Fundamental high-frequency performance limit for impatt mode operation
- Author(s): P.A. Blakey and R.K. Froelich
- Source: Electronics Letters, Volume 21, Issue 1, p. 28 –29
- DOI: 10.1049/el:19850022
- Type: Article
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It is well known that the phase delay associated with carrier energy relaxation in impatt diodes tends to improve their performance. The purpose of the letter is to point out that there is also an amplitude degradation effect which tends to impair impatt performance. At high enough frequencies the amplitude degradation effect dominates, leading to a high-frequency performance roll-off. The net effect of energy relaxation is believed to be deleterious for frequencies above about 500 GHz for Si devices, and at lower frequencies for GaAs devices.
Double-flame VAD process for high-rate optical preform fabrication
- Author(s): H. Suda ; S. Shibata ; M. Nak
- Source: Electronics Letters, Volume 21, Issue 1, p. 29 –30
- DOI: 10.1049/el:19850023
- Type: Article
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High-rate deposition techniques for the VAD process have been developed by increasing the size of synthesised fine glass particles by means of a new ‘double-flame burner’. VAD core preforms have been increased to 2500 g in size, from which a 580 km-length fibre with 50 μm core diameter can be drawn. A deposition rate of 4.5 g/min from one burner has been attained. Fibres from high-rate deposited preforms exhibit transmission losses of 0.62 dB/km at 1.3 μm and 0.44 dB/km at 1.55 μm.
Hot-hole-induced degradation in depletion-mode n-channel MOSFETs
- Author(s): I. Stoev ; F. Bauer ; P. Balk
- Source: Electronics Letters, Volume 21, Issue 1, p. 30 –31
- DOI: 10.1049/el:19850024
- Type: Article
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Injection and trapping of hot holes was studied in n-channel depletion-mode MOSFETs and compared to that in enhancement devices. The rate of device degradation was found to decrease with increasing channel doping. A model is proposed explaining this behaviour from the current transport in the buried channel and from the effect of the channel doping level on the field near the drain.
Determination of drift mobility and carrier concentration in semiconductors using surface acoustic wave amplifier structure
- Author(s): H. Baudrand ; T.E. Taha ; M. Benslama
- Source: Electronics Letters, Volume 21, Issue 1, p. 32 –33
- DOI: 10.1049/el:19850025
- Type: Article
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Experimental data are analysed in order to determine the electric field at which the synchronism occurs in a semiconductor piezoelectric amplifier structure. In the interaction region the electron mobility of a sample of high resistivity silicon is measured to be in the order of 1268 cm2/Vs. The carrier concentration is deduced as a result of the comparison between the experimental and theoretical results.
Gain characteristics of a 1.5 μm DCPBH InGaAsP resonant optical amplifier
- Author(s): H.J. Westlake and M.J. O'Mahony
- Source: Electronics Letters, Volume 21, Issue 1, p. 33 –35
- DOI: 10.1049/el:19850026
- Type: Article
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The results of measurements on a 1.5 μm resonant optical amplifier are reported. A maximum gain of 25 dB was measured when the wavelength of the input signal matched the central mode in the amplifier spectrum. The input gain saturation power was −41 dBm, but this increased to −25 dBm when the source wavelength was increased by 15 nm.
Two-channel heterodyne-type transmission experiment
- Author(s): E.-J. Bachus ; F. Böhnke ; R.-P. Braun ; W. Eutin ; H. Foisel ; K. Heimes ; B. Strebel
- Source: Electronics Letters, Volume 21, Issue 1, p. 35 –36
- DOI: 10.1049/el:19850027
- Type: Article
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A two-channel fibre-optic transmission experiment at 825 nm wavelength with demultiplexing by a tunable optical heterodyne receiver is reported. The two optical carriers have a separation of 2 GHz. 70 Mbit/s CMI-coded data are transmitted using a PSK/FM subcarrier modulation method.
Novel optical isolator consisting of a YIG spherical lens and PANDA-fibre polarisers
- Author(s): K. Okamoto ; H. Miyazawa ; J. Noda ; M. Saruwatari
- Source: Electronics Letters, Volume 21, Issue 1, p. 36 –38
- DOI: 10.1049/el:19850028
- Type: Article
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A novel optical isolator consisting of an yttrium-iron-garnet (YIG) sphere and two PANDA-fibre polarisers is reported. The YIG sphere functions not only as a Faraday rotator but also as an efficient coupling lens. The extinction ratio of the PANDA-fibre polariser was 37 dB when the 3 m-long fibre was coiled by the diameter D = 21 cm. The isolation ratio was 34.7 dB at 1.3 μm wavelength with the insertion loss of 4.1 dB through the PANDA-fibre polariser to the analyser.
Alpha-particle-induced failure modes in dynamic RAMs
- Author(s): P.M. Carter and B.R. Wilkins
- Source: Electronics Letters, Volume 21, Issue 1, p. 38 –39
- DOI: 10.1049/el:19850029
- Type: Article
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The alpha-particle-induced soft error rates of 64K D-RAMs made by five leading manufacturers have been compared. Different samples from the same manufacturer, and those from four different manufacturers, are all shown to be very similar, but the fifth manufacturers product has a soft error rate that is an order of magnitude larger than the others. The results also suggest that, for most products, sensitivity is in the bit lines or sense amplifiers, while for those from the fifth manufacturer it resides in the cells.
Tensile strength of optical fibre ribbon
- Author(s): K. Hogari and Y. Katsuyama
- Source: Electronics Letters, Volume 21, Issue 1, p. 39 –41
- DOI: 10.1049/el:19850030
- Type: Article
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The tensile strength characteristics of fibre ribbon were evaluated theoretically and experimentally. The strength of N-fibre ribbon can be predicted by multiplying that of individual fibre by N1−1m (where m is the Weibull distribution constant), when the strength distribution of the component fibre is given.
Experimental nonlinear optical waveguide device
- Author(s): I. Bennion ; M.J. Goodwin ; W.J. Stewart
- Source: Electronics Letters, Volume 21, Issue 1, p. 41 –42
- DOI: 10.1049/el:19850031
- Type: Article
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The behaviour of an optical waveguide device with a nonlinear overlayer is reported. Intensity-dependent hysteresis has been observed in the light guided by the structure, and is related to the intensity-dependent refractive index of the overlayer.
Analysis of scattering by cylindrical struts of arbitrary cross-section
- Author(s): L.C. da Silva and L.M.D. Henriques
- Source: Electronics Letters, Volume 21, Issue 1, p. 42 –44
- DOI: 10.1049/el:19850032
- Type: Article
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The letter gives a procedure to calculate the scattered fields produced by cylindrical struts of arbitrary cross-section in reflector antennas. This procedure is based on the determination by the moment method, under certain approximations, of the induced currents on the strut surface. Experimental measurements show the accuracy of the proposed technique.
Waveguide formation in bulk GaAs and InP materials
- Author(s): D.J. Jackson and D.L. Persechini
- Source: Electronics Letters, Volume 21, Issue 1, p. 44 –45
- DOI: 10.1049/el:19850033
- Type: Article
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Complex waveguiding structures can be fabricated in bulk materials by simply inducing patterned stresses in excess of 1010 dynes/cm2. We report on the first low-loss waveguides constructed in bulk GaAs and InP by this method.
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