Online ISSN
1350-911X
Print ISSN
0013-5194
Electronics Letters
Volume 21, Issue 18, 29 August 1985
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Volume 21, Issue 18
29 August 1985
Effect of video amplifier rise time and CRT gamma on performance of a high-resolution monitor
- Author(s): M. Miessler
- Source: Electronics Letters, Volume 21, Issue 18, page: 777 –777
- DOI: 10.1049/el:19850547
- Type: Article
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In high-resolution CRT monitors driven from a digital refresh memory it has been observed that white vertical lines are narrower than horizontal lines, an effect most noticeable on single-pixel-wide lines. The letter offers reasons why this happens and describes a simple hardware solution of the problem.
Use of transparent indium tin oxide to form a highly efficient 20 GHz Schottky barrier photodiode
- Author(s): D.G. Parker
- Source: Electronics Letters, Volume 21, Issue 18, page: 778 –778
- DOI: 10.1049/el:19850548
- Type: Article
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The letter discusses the development and characterisation of a GaAs Schottky barrier photodiode based on transparent conducting indium tin oxide (ITO). The use of ITO results in external quantum efficiencies of 60% at 830 nm. The devices have been measured to have a FWHM impulse response of ∼20 ps and a −3 dBm bandwidth in excess of 20 GHz.
Triple-stripe phase-locked diode lasers emitting 100 mw CW with single-lobed far-field patterns
- Author(s): J. Ohsawa ; S. Hinata ; T. Aoyagi ; T. Kadowaki ; N. Kaneno ; K. Ikeda ; W. Susaki
- Source: Electronics Letters, Volume 21, Issue 18, p. 779 –780
- DOI: 10.1049/el:19850549
- Type: Article
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AlGaAs laser arrays with inner stripe configuration have been developed. Transverse mode control was accomplished by introducing nonuniform refractive index and gain distributions, which are built in utilising growth features of liquid-phase epitaxy. The maximum light outputs are 130 mW and 400 mW in CW and pulsed operation, respectively.
Phased array of AlGaAs multistripe index-guided lasers
- Author(s): N. Kaneno ; T. Kadowaki ; J. Ohsawa ; T. Aoyagi ; S. Hinata ; K. Ikeda ; W. Susaki
- Source: Electronics Letters, Volume 21, Issue 18, p. 780 –781
- DOI: 10.1049/el:19850550
- Type: Article
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The fabrication and characteristics of a novel index-guided phase-locked array are described. A single-lobe far-field pattern was obtained up to the CW output of 100 mW in the 3-element diode laser.
Chromatic dispersion measurement of a single-mode fibre by improved optical heterodyne interferometry
- Author(s): M. Tsubokawa ; N. Shibata ; S. Seikai ; T. Higashi
- Source: Electronics Letters, Volume 21, Issue 18, p. 781 –783
- DOI: 10.1049/el:19850551
- Type: Article
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The chromatic dispersion of a single-mode fibre is successfully measured by means of an optical heterodyne detection method with temporal resolution of 0.01 ps. The heterodyne signal is detected at the near end of the fibre of length approximately 1 m using laser diodes operating in the 1.19–1.51 μm wavelength region.
Bulk optical isolator tunable from 1.2 μm to 1.7 μm
- Author(s): R.M. Jopson ; G. Eisenstein ; H.E. Earl ; K.L. Hall
- Source: Electronics Letters, Volume 21, Issue 18, p. 783 –784
- DOI: 10.1049/el:19850552
- Type: Article
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A uniquely designed, mechanically tunable, bulk optical isolator for the 1.2 to 1.7 μm wavelength range is described. The isolator can be tuned for isolation better than 32 dB over the operating wavelength range with a forward loss ranging from -3.6 dB at 1.2 μm to -0.8 dB at 1.6 μm.
Simultaneous transmission of speech and data using an adaptive cancelling technique
- Author(s): R. Nash and W.C. Wong
- Source: Electronics Letters, Volume 21, Issue 18, p. 784 –786
- DOI: 10.1049/el:19850553
- Type: Article
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A new scheme to transmit data and analogue speech simultaneously over an analogue transmission line is presented. The transmitter simply combines speech and modulated voice-band data signals together while the receiver uses an adaptive cancelling technique to recover these signals from the received composite. The scheme works for phase-dispersive channels and without bandwidth expansion.
Method for cooling and bubble-free coating of optical fibres at high drawing rates
- Author(s): C.M.G. Jochem and J.W.C. van der Ligt
- Source: Electronics Letters, Volume 21, Issue 18, p. 786 –787
- DOI: 10.1049/el:19850554
- Type: Article
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Limiting factors in the high-rate production of optical fibres are the cooling rate of the glass after drawing and air trapping in the coating. Experiments have proved the possibility of drawing and coating optical fibres at a rate of at least 750 m/min without any bubble formation in the coating. This was realised in a short drawing tower.
New polarisation-control scheme for optical heterodyne receiver using two Faraday rotators
- Author(s): T. Okoshi ; Y.H. Cheng ; K. Kikuchi
- Source: Electronics Letters, Volume 21, Issue 18, p. 787 –788
- DOI: 10.1049/el:19850555
- Type: Article
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A new state-of-polarisation (SOP) control scheme using two Faraday rotators is proposed. It features low optical insertion loss and quick response. Experiment shows that the receiver output is stable regardless of drastic SOP changes in the signal.
Power spectra of mB1C codes for optical communication
- Author(s): G.S. Poo
- Source: Electronics Letters, Volume 21, Issue 18, p. 788 –790
- DOI: 10.1049/el:19850556
- Type: Article
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An attractive analytical formula for mB1C codes is deduced using computation based on the finite-state-machine approach. The formula depends solely on the parameter m and is valid for most cases of interest.
Gigahertz band GaAs monolithic limiting amplifier
- Author(s): Y. Akazawa ; T. Wakimoto ; H. Kikuchi ; K. Kawarada ; N. Kato ; K. Ohwada
- Source: Electronics Letters, Volume 21, Issue 18, p. 790 –791
- DOI: 10.1049/el:19850557
- Type: Article
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The letter presents the design and performance of a gigahertz band limiting amplifier IC using GaAs MESFET IC technology. With a two-chip connection, an AM/PM conversion of 0.7°/dB over 43 dB input dynamic range at 1 GHz has been achieved.
Fast amplitude control in twin-T bridge RC oscillators
- Author(s): I.M. Filanovsky and G.J. Fortier
- Source: Electronics Letters, Volume 21, Issue 18, p. 791 –792
- DOI: 10.1049/el:19850558
- Type: Article
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When a sinusoidal voltage is applied to the symmetrical twin-T bridge, the voltages at the inner nodes of the bridge have equal amplitudes and are shifted by 90°. If they are squared and summed, the resulting DC voltage can be used to control the gate of a field-effect transistor connected to the bridge. The oscillator with such a control system simultaneously has low distortion and fast amplitude transient response.
Influence of doping on threshold current of semiconductor lasers
- Author(s): A. Haug
- Source: Electronics Letters, Volume 21, Issue 18, p. 792 –794
- DOI: 10.1049/el:19850559
- Type: Article
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Doping of the active layer of a semiconductor laser reduces the threshold carrier density, the more so the higher the doping level. As a consequence, the threshold current goes through a minimum dependent on doping. This minimum arises for doping densities of the order of 1018 cm−3, and lies about 25% below the value without doping for an n-doped InGaAsP laser. As the temperature dependence of the threshold current is simultaneously weaker (T0≃85°), appropriate n-doping may improve the efficiency of a semiconductor laser. Additionally, it is shown that n-doping is more favourable than p-doping.
Modified Lu-Lee cryptosystem
- Author(s): B.S. Adiga and P. Shankar
- Source: Electronics Letters, Volume 21, Issue 18, p. 794 –795
- DOI: 10.1049/el:19850560
- Type: Article
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–795
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A modified Lu-Lee cryptosystem is proposed which appears to be resistant to the cryptanalytic attacks on the original Lu-Lee scheme. The data expansion due to encryption is moderate, and the size of the public key is also quite small.
New fabrication technique for single-phase unidirectional SAW filter (EMUDT) in UHF range
- Author(s): K. Yamanouchi ; Z.H. Chen ; T. Meguro
- Source: Electronics Letters, Volume 21, Issue 18, p. 795 –796
- DOI: 10.1049/el:19850561
- Type: Article
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–796
(2)
New fabrication techniques for single-phase unidirectional SAW filters (EMUDT) utilising the self-aligned angle-evaporation technique are described. The experimental results show a directivity of 10.0 dB/transducer at 483 MHz.
Water propagation blocking properties of submarine optical fibre cable
- Author(s): N. Yoshizawa ; M. Ohnishi ; Y. Negishi
- Source: Electronics Letters, Volume 21, Issue 18, p. 796 –798
- DOI: 10.1049/el:19850562
- Type: Article
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–798
(3)
A submarine optical fibre cable is developed which has excellent water propagation blocking properties. Propagation is estimated to be less than 750 m/month at a depth of 8000 m. It also has low-loss properties of 0.40 dB/km at a wavelength of 1.3 μm.
Narrowband position-tuned multilayer interference filter for use in single-mode-fibre systems
- Author(s): P.H. Lissberger ; A.K. Roy ; D.J. McCartney
- Source: Electronics Letters, Volume 21, Issue 18, p. 798 –799
- DOI: 10.1049/el:19850563
- Type: Article
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–799
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The design and construction of a position-tuned multilayer dielectric interference filter for use in the 1.25–1.30 μm wavelength range is described. Results showing a significant improvement in performance over currently available devices are reported. The performance of this filter in a single-mode to single-mode fibre component is also described with peak efficiencies >80% and Δλ½(FWHM)<13 nm.
Retrieval of hyperthermia-induced temperature distribution from noisy microwave radiometric data
- Author(s): F. Bardati ; M. Mongiardo ; D. Solimini
- Source: Electronics Letters, Volume 21, Issue 18, p. 800 –801
- DOI: 10.1049/el:19850564
- Type: Article
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–801
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The subcutaneous temperature distribution of a simulated hyperthermic treatment is retrieved from a set of noisy radiometric measurements at six equally spaced frequencies in the range 1.5–6.5 GHz. Temperature profiles reconstructed by the combined use of both the singular value decomposition of the radiometric integral equation and Kalman filtering are shown.
Achievement of shot-noise-limited sensitivity and 50 dB dynamic range by photon-counting receiver using Si avalanche photodiode
- Author(s): K. Kikuchi ; T. Okoshi ; A. Hirose
- Source: Electronics Letters, Volume 21, Issue 18, p. 801 –802
- DOI: 10.1049/el:19850565
- Type: Article
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p.
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–802
(2)
A photon-counting receiver using an Si avalanche photodiode has been constructed. The circuit noise, dark-current noise and excess noise pulses can be discriminated perfectly from the signal pulse; thus a shot-noise-limited receiver sensitivity has been achieved. The dynamic range of the receiver is above 50 dB.
Thermal donor and new donor generation in SOI material formed by oxygen implantation
- Author(s): S. Cristoloveanu ; J. Pumfrey ; E. Scheid ; P.L.F. Hemment ; R.P. Arrowsmith
- Source: Electronics Letters, Volume 21, Issue 18, p. 802 –804
- DOI: 10.1049/el:19850566
- Type: Article
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–804
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The oxygen content of silicon-on-insulator films, formed by oxygen implantation, is shown to be responsible for the generation of high-density free carriers: thermal donors at 450°C and new donors at 750°C. The variation of sheet resistance and spreading resistance profiles is measured after successive isochronal and isothermal anneals. The initial generation rate of new donors greatly exceeds that of thermal donors, suggesting a surface-states-related mechanism.
Au/TiN/WSi-gate self-aligned GaAs MESFETs using rapid thermal annealing method
- Author(s): K. Imamura ; T. Ohnishi ; M. Shigaki ; N. Yokoyama ; H. Nishi
- Source: Electronics Letters, Volume 21, Issue 18, p. 804 –805
- DOI: 10.1049/el:19850567
- Type: Article
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–805
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Au/TiN/WSi-gate self-aligned GaAs MESFETs were fabricated using the rapid thermal annealing method to reduce the gate resistance of the FETs. The gate resistance Rg was 4.2 Ω (Lg=1.5 μm, Wg=400 μm), just 1/20 of that of the WSi-gate FET. The maximum frequency of oscillation fmax of the Au/TiN/WSi-gate FETs was improved to be about twice that of WSi-gate FETs.
Frost-resistant coated optical fibres
- Author(s): A.A. Abramov ; G.Yu. Borkina ; M.M. Bubnov ; E.M. Dianov ; A.N. Guryanov ; V.N. Mjakov
- Source: Electronics Letters, Volume 21, Issue 18, p. 805 –807
- DOI: 10.1049/el:19850568
- Type: Article
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–807
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Investigations of optical fibre losses in the range from -100°C to 20°C have shown that silicone crystallisation causes a significant loss increase in coated MCVD fibres, irrespective of the secondary jacket material. The application of noncrystallised silicone has provided a low level of the excess losses at low temperatures.
Voltage comparators implemented with GaAs/(GaAl)As heterojunction bipolar transistors
- Author(s): K.C. Wang ; P.M. Asbeck ; D.L. Miller ; F.H. Eisen
- Source: Electronics Letters, Volume 21, Issue 18, p. 807 –808
- DOI: 10.1049/el:19850569
- Type: Article
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The first voltage comparators implemented with GaAs/(GaAl)As heterojunction bipolar transistors (HBTs) are reported. The offset voltage of these circuits was found to be generally below 4 mV, and hysteresis below 1 mV; both voltages stayed quite constant over a range of reference voltage of about 1 V. The preliminary circuit yield was high. This work demonstrated the suitability of these HBT comparators for use in a flash A/D convertor of high accuracy (up to 8 bits).
Adaptive radar detection
- Author(s): Qi-Tu Zwang and S. Haykin
- Source: Electronics Letters, Volume 21, Issue 18, p. 808 –810
- DOI: 10.1049/el:19850570
- Type: Article
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In the letter a new adaptive procedure for the detection of a radar target in clutter is described. The procedure is based on the development of linear models for the two hypotheses H0 and H1. Under hypothesis H0, there is no target present, and the received signal is modelled as a regressive process. Under hypothesis H1, a target is present and the received signal is modelled as an autoregressive process. Results based on actual radar data are included to confirm the validity of this new approach, and comparison is made with the previously published innovations-based detection algorithm.
Au-Ga alloy film acoustic bonding
- Author(s): J.T. Veligdan
- Source: Electronics Letters, Volume 21, Issue 18, p. 810 –811
- DOI: 10.1049/el:19850571
- Type: Article
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A new method for bonding transducers to acousto-optic devices is described which makes use of the alloying properties of gold to gallium. The bonding is performed at room temperature in ordinary atmosphere and has excellent structural integrity with a large bandwidth.
Non-Gaussian intensity distribution and dispersion compensation in single-mode fibres
- Author(s): F. Weling
- Source: Electronics Letters, Volume 21, Issue 18, p. 811 –812
- DOI: 10.1049/el:19850572
- Type: Article
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In the letter it is shown that the Gaussian approximation for the fundamental mode of a typical quadruple-clad fibre does not lead to the observed dispersion behaviour. The calculations indicate that the non-Gaussian shape of the intensity distribution and the dispersion compensation are closely related. The experiments can be explained by assuming that the fundamental mode is a superposition of two Gauss functions.
InGaAs PIN photodetectors with modulation response to millimetre wavelengths
- Author(s): J.E. Bowers ; C.A. Burrus ; R.J. McCoy
- Source: Electronics Letters, Volume 21, Issue 18, p. 812 –814
- DOI: 10.1049/el:19850573
- Type: Article
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The transit-time and parasitic limitations on the bandwidth of PIN photodetectors are described and compared with experimental results. Packaged InGaAs photodetectors with measured 3 dB response to 36 GHz (8.3 mm wavelength) have been made.
35 GHz microwave signal generation with an injection-locked laser diode
- Author(s): L. Goldberg ; A.M. Yurek ; H.F. Taylor ; J.F. Weller
- Source: Electronics Letters, Volume 21, Issue 18, p. 814 –815
- DOI: 10.1049/el:19850574
- Type: Article
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A new technique for sinusoidal intensity modulation of light, based on injection-locking of two longitudinal modes of a single laser to FM sidebands of another laser, is described. A 35 GHz microwave signal with a linewidth of less than 10 Hz was generated.
Room-temperature GaInAsSb/AlGaAsSb DH injection lasers at 2.2 μm
- Author(s): C. Caneau ; A.K. Srivastava ; A.G. Dentai ; J.L. Zyskind ; M.A. Pollack
- Source: Electronics Letters, Volume 21, Issue 18, p. 815 –817
- DOI: 10.1049/el:19850575
- Type: Article
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Double-heterostructure lasers based on the GaInAsSb/AlGaAsSb system have been prepared by liquid-phase epitaxy and operated in the 2.2 μm-wavelength region. Room-temperature, pulsed threshold current densities of 6 kA/cm2 and characteristic temperatures of T 0= 85 K have been obtained.
CMOS triode transconductor for continuous-time active integrated filters
- Author(s): J.L. Pennock
- Source: Electronics Letters, Volume 21, Issue 18, p. 817 –818
- DOI: 10.1049/el:19850576
- Type: Article
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A ‘triode transconductor’ fully differential transconductance element for use in continuous-time CMOS integrated filters is proposed. It is based on a common-source pair of triodemode MOS transistors. Preliminary experimental results from breadboarded transconductors and complete filters show good distortion performance. Several practical advantages are claimed over previous approaches.
Simple technique for measuring attenuation of integrated optical waveguides
- Author(s): N. Nourshargh ; E.M. Starr ; N.I. Fox ; S.G. Jones
- Source: Electronics Letters, Volume 21, Issue 18, p. 818 –820
- DOI: 10.1049/el:19850577
- Type: Article
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A very simple method for measuring the attenuation of integrated optical waveguides using a fibre probe is reported. The method has been successfully used for measuring attenuations as low as 0.3 dB/cm.
Dual reflector synthesis for specified aperture power and phase
- Author(s): J.R. Bergmann ; R.C. Brown ; P.J.B. Clarricoats
- Source: Electronics Letters, Volume 21, Issue 18, p. 820 –821
- DOI: 10.1049/el:19850578
- Type: Article
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A dual reflector is synthesised to achieve a specified aperture power and phase distribution, allowing generally shaped radiation patterns to be achieved using a simple feed. Geometrical optics is used to shape the reflectors. A separate physical optics analysis confirms the success of this synthesis.
Efficiency of unstable resonator semiconductor lasers
- Author(s): J. Salzman ; R. Lang ; A. Yariv
- Source: Electronics Letters, Volume 21, Issue 18, p. 821 –823
- DOI: 10.1049/el:19850579
- Type: Article
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The external quantum efficiency, ηd of an unstable resonator semiconductor laser is calculated in terms of the eigenvalue of the oscillating field. Design considerations for optimising ηd by controlling the mirror reflectivities are given.
Strained-quantum-well, modulation-doped, field-effect transistor
- Author(s): T.E. Zipperian and T.J. Drummond
- Source: Electronics Letters, Volume 21, Issue 18, p. 823 –824
- DOI: 10.1049/el:19850580
- Type: Article
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A new modulation-doped field-effect transistor structure which employs a thin (8 nm) strained layer of In 0.25 Ga 0.75 As as the channel is described. The prototype device with a 2.9 μm gate length had a peak, room-temperature, unilluminated extrinsic transconductance of 91 mS/mm (VDS = 1 V). If device performance scaled linearly with gate length to 1 μm, as do (Al, Ga)As/GaAs, single-interface, modulation-doped FETs, this is the best room-temperature performance reported to date for an (In, Ga)As channel, modulation-doped transistor. Furthermore, the transconductance of the strained-quantum-well transistor proved to be almost constant with gate voltage, varying less than 13% over a 0.5 V range at 77 K. This will allow the fabrication of extremely linear microwave amplifiers and supports the assertion that the current conduction path is the (In, Ga)As channel.
Erratum: New ν(E) relationship for GaAs
- Author(s): Y.-K. Feng
- Source: Electronics Letters, Volume 21, Issue 18, page: 824 –824
- DOI: 10.1049/el:19850581
- Type: Article
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Erratum: Characteristic impedance of coplanar waveguide
- Author(s): D. Bhattacharya
- Source: Electronics Letters, Volume 21, Issue 18, page: 824 –824
- DOI: 10.1049/el:19850582
- Type: Article
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