Online ISSN
1350-911X
Print ISSN
0013-5194
Electronics Letters
Volume 21, Issue 13, 20 June 1985
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Volume 21, Issue 13
20 June 1985
Optically induced latch-up and other effects in CMOS UVEPROMs
- Author(s): D.J. Hinds and J.C.D. Stokoe
- Source: Electronics Letters, Volume 21, Issue 13, p. 553 –554
- DOI: 10.1049/el:19850390
- Type: Article
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p.
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–554
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Photographic flash-gun equipment used close to uncovered CMOS UVEPROMs can induce a variety of different failure modes including: (a) destructive latch-up, (b) transients in the output logic levels and in the supply current and (c) a nonde structive ‘output latching’ effect. The mode of failure observed depends on the level of illumination used and on the logic state of the output pins.
Multiple monolayer adsorption—a new technique for the production of noncentrosymmetric films
- Author(s): R.H. Tredgold ; C.S. Winter ; Z.I. El-Badaway
- Source: Electronics Letters, Volume 21, Issue 13, p. 554 –555
- DOI: 10.1049/el:19850391
- Type: Article
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p.
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–555
(2)
A new technique is described, whereby a multilayer film is built-up monolayer by monolayer by adsorption of suitable amphiphilic fluorocarbons from alternately hexadecane then water. The capacitance-thickness measurements indicate good, uniform monolayer coverage.
Subpicosecond base transit time observed in a hot-electron transistor (HET)
- Author(s): S. Muto ; K. Imamura ; N. Yokoyama ; S. Hiyamizu ; H. Nishi
- Source: Electronics Letters, Volume 21, Issue 13, p. 555 –556
- DOI: 10.1049/el:19850392
- Type: Article
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p.
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–556
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It has been found that the transverse magnetic field drastically reduces the current gain of an AlGaAs/GaAs hot-electron transistor (HET) at 4.2 K. The result can be understood in terms of the cyclotron motion of hot electrons within the base layer (1000 Å thick). Estimated subpicosecond base transit time confirms the quasiballistic transport of hot electrons across the base layer of the HET.
Characteristic impedance of coplanar waveguide
- Author(s): D. Bhattacharya
- Source: Electronics Letters, Volume 21, Issue 13, page: 557 –557
- DOI: 10.1049/el:19850393
- Type: Article
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p.
557
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A simplified formula for the characteristic impedance of a coplanar waveguide (CPW) has been proposed. The formulation is based on the determination of the static capacitances between parallel strips and is found to be valid even up to zero gap width.
Selective etching characteristics of HF for AlxGa1-xAs/GaAs
- Author(s): X.S. Wu ; L.A. Coldren ; J.L. MERZ
- Source: Electronics Letters, Volume 21, Issue 13, p. 558 –559
- DOI: 10.1049/el:19850394
- Type: Article
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–559
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The first detailed report of the selective etching characteristics of an AlxGa1-xAs/GaAs DH wafer (x≥0.4) in an HF system is given. Selective etching at a cleaved facet and a calculation of the energy of activation are included.
Untuned low insertion loss surface leaky wave filter
- Author(s): D. Zhang ; Y.A. Shui ; W.Q. Wu
- Source: Electronics Letters, Volume 21, Issue 13, p. 559 –560
- DOI: 10.1049/el:19850395
- Type: Article
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–560
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The letter presents a broadband low insertion loss surface leaky wave filter using reflective multistrip couplers on an optimum cut and orientation of lithium niobate. The insertion loss has been reduced to 3–4 dB without any inductors for phase-shift networks or tuning, and the out-of-band rejection is about 23 dB. The fractional bandwidth is up to 2–5%. The out-of-band rejection can be reduced to 40 dB, when the IDTs are apodised.
Microwave technique for reflector antenna profile measurement
- Author(s): J.C. Bennett and D.G. Swan
- Source: Electronics Letters, Volume 21, Issue 13, p. 560 –561
- DOI: 10.1049/el:19850396
- Type: Article
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–561
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A method for microwave measurement of the reflector antenna surface profile is described. The technique uses a focused monostatic secondary reflector located on axis at approximately two focal lenths from the reflector under test. Measurement of the two-ways phase change provides profile error information over a set of annular sections. Practical results are provided to illustrate the spatial resolution and sensitivity of the technique.
Polarisation analysis of strongly fused and weakly fused tapered couplers
- Author(s): F.P. Payne ; C.D. Hussey ; M.S. Yataki
- Source: Electronics Letters, Volume 21, Issue 13, p. 561 –563
- DOI: 10.1049/el:19850397
- Type: Article
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–563
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The polarisation properties of both strongly fused and weakly fused single-mode tapered fibre couplers have been analysed. A comparison with experimental results shows excellent agreement with our analysis.
Simple hybrid mode horn feed loaded with a dielectric cone
- Author(s): E. Lier and J.A. Aas
- Source: Electronics Letters, Volume 21, Issue 13, p. 563 –564
- DOI: 10.1049/el:19850398
- Type: Article
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A conical horn loaded with a solid dielectric cone, separated from the metal wall by a thin layer of low-permittivity material or air, is analysed theoretically and tested experimentally. This simple feed exhibits excellent radiation properties, with a crosspolar bandwidth similar to that of a corrugated horn.
Injection-lock bandwidth extension by control modulation and current ‘hump’ slope detection
- Author(s): R.M. Braun and B.J. Downing
- Source: Electronics Letters, Volume 21, Issue 13, p. 564 –566
- DOI: 10.1049/el:19850399
- Type: Article
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A scheme is described for using the injection-locking bandwidth of an electronically tuned microwave solid-state source to extend the locking to the limits of its electronic tuning range. The power supply current ‘hump’ phenomenon is used to slope-detect a control modulation, which is then used to eliminate the difference in frequency between the free-running oscillator and the injected signal.
Low threshold GaAs/GaAlAs BH lasers with ion-beam-etched mirrors
- Author(s): N. Bouadma ; J. Riou ; A. Kampfer
- Source: Electronics Letters, Volume 21, Issue 13, p. 566 –568
- DOI: 10.1049/el:19850400
- Type: Article
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–568
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We report the use of the ion-beam etching (IBE) technique to produce GaAs/GaAlAs BH lasers with one etched and one cleaved mirror facet. Low threshold currents of 12 mA have been measured in devices with 100 μm-long cavities.
Two-dimensional E-field mapping with subpicosecond temporal resolution
- Author(s): K.E. Meyer and G.A. Mourou
- Source: Electronics Letters, Volume 21, Issue 13, p. 568 –569
- DOI: 10.1049/el:19850401
- Type: Article
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p.
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–569
(2)
A new contactless reflection-mode electro-optic sampling technique is described which is capable of characterising the electrical response of microstructures in two dimensions with micrometre spatial resolution, a temporal response of a fraction of a picosecond and millivolt sensitivity. A GaAs-based sampling technique which would have minimum interference with the test circuit is also proposed.
Distributed optical fibre Raman temperature sensor using a semiconductor light source and detector
- Author(s): J.P. Dakin ; D.J. Pratt ; G.W. Bibby ; J.N. Ross
- Source: Electronics Letters, Volume 21, Issue 13, p. 569 –570
- DOI: 10.1049/el:19850402
- Type: Article
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The letter reports on the first experimental measurements of the temperature distribution along silica-based optical fibres using a semiconductor laser source and an avalanche photodiode detector. Previous results by the same authors demonstrated the first use of the Raman scattering technique, but used a less practical ion laser source and a photomultiplier detector.
Linearity of pMOS radiation dosimeters operated at zero bias
- Author(s): A. Holmes-Siedle ; L. Adams ; B. Pauly ; S. Marsden
- Source: Electronics Letters, Volume 21, Issue 13, p. 570 –571
- DOI: 10.1049/el:19850403
- Type: Article
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–571
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A new mode of operation of pMOS radiation dosimeters is explored, using zero applied oxide field. Over a certain dose range, a linear dependence of response against dose was found. Charge pumping currents and threshold voltages were measured as a function of dose.
Fabrication and performance characteristics of InGaAsP ridge-guide distributed-feedback multiquantum-well lasers
- Author(s): N.K. Dutta ; T. Wessel ; N.A. Olsson ; R.A. Logan ; R. Yen ; P.J. Anthony
- Source: Electronics Letters, Volume 21, Issue 13, p. 571 –573
- DOI: 10.1049/el:19850404
- Type: Article
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–573
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The fabrication and performance characteristics of InGaAsP ridge-guide distributed-feedback lasers with multiquantum-well active layers are reported. The lasers are 320 μm long and have four active wells (̃300 Å thick). The lasers have threshold current ̃100 mA at 30°C, external differential quantum efficiency ̃0.1 mW/mA/facet at 30°C and Tõ 60 K and can be operated in the same DFB mode up to 70°C. The measured frequency chirp is about a factor of 3 smaller than that for conventional double-heterostructure lasers. The smaller chirp should allow larger repeater spacing for high-bit-rate long-distance fibre transmission systems applications.
Surface-acoustic-wave frequency-domain limiter
- Author(s): M.F. Lewis
- Source: Electronics Letters, Volume 21, Issue 13, p. 573 –574
- DOI: 10.1049/el:19850405
- Type: Article
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–574
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It is shown that, by exploiting the 2-dimensional structure of a SAW substrate to propagate different frequency components over distinct physical paths, the amplitude-limiting process that occurs at high power levels can be made ‘local’ in the frequency domain. One application of such a frequency-domain limiter is to suppress CW interference in spread-spectrum communications.
High-temperature excitons and enhanced electroabsorption in InGaAs/InAlAs multiple quantum wells
- Author(s): K. Wakita ; Y. Kawamura ; Y. Yoshikuni ; H. Asahi
- Source: Electronics Letters, Volume 21, Issue 13, p. 574 –576
- DOI: 10.1049/el:19850406
- Type: Article
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p.
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–576
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Sharp heavy-hole and light-hole excitons are clearly observed for the first time in InGaAs/InAlAs multiple-quantum-well (MQW) structures at temperatures ranging from −190°C to 70°C. The halfwidth of the heavy-hole exciton line is as narrow as 6.2 meV at room temperature. InGaAs/InAlAs MQWs are prepared in a PIN doped configuration by molecular beam epitaxy. An enhanced electroabsorption effect is also clearly observed in long-wavelength-region MQWs.
Novel method for calculating maximum bulk electric field in high-voltage diodes with large negative bevel angles
- Author(s): W.J. Perold
- Source: Electronics Letters, Volume 21, Issue 13, p. 576 –577
- DOI: 10.1049/el:19850407
- Type: Article
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–577
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The letter describes a simple method for calculating the maximum bulk electric field in high-voltage semiconductor diodes with large bevel angles. It is based on the notion of a characteristic length, which is defined in the letter. The resulting model is a useful design aid.
15 GHz direct modulation bandwidth of vapour-phase regrown 1.3 μm InGaAsP buried-heterostructure lasers under CW operation at room temperature
- Author(s): C.B. Su ; V. Lanzisera ; R. Olshansky ; W. Powazinik ; E. Meland ; J. Schlafer ; R.B. Lauer
- Source: Electronics Letters, Volume 21, Issue 13, p. 577 –579
- DOI: 10.1049/el:19850408
- Type: Article
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A modulation bandwidth of 15 GHz is reported for vapour-phase regrown (VPR) 1.3 μm InGaAsP buried heterostructure (BH) lasers. This is the highest bandwidth achieved at room temperature for a III-V semiconductor laser under CW operation. The bandwidth against square root of bias optical power is linear to 15 GHz and no band width saturation effects are observed.
Electric-field-induced refractive index variation in quantum-well structure
- Author(s): H. Yamamoto ; M. Asada ; Y. Suematsu
- Source: Electronics Letters, Volume 21, Issue 13, p. 579 –580
- DOI: 10.1049/el:19850409
- Type: Article
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p.
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–580
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The refractive index variation in a quantum-well structure by an electric field is given theoretically. The calculated variation is −1% for an applied field of 3.1×105 V/cm in a 300 Å-thick GaInAsP/InP single quantum well, which is about 39 times larger than the bulk value. A semiconductor quantum-well structure is found theoretically to be a new material with a larger electro-optic coefficient. Application to a new optical switching device is also suggested.
p-channel GaAs SIS (semiconductor-insulator-semiconductor) FET
- Author(s): K. Matsumoto ; M. Ogura ; T. Wada ; T. Yao ; Y. Hayashi ; N. Hashizume ; M. Kato ; T. Endo ; H. Inage
- Source: Electronics Letters, Volume 21, Issue 13, p. 580 –581
- DOI: 10.1049/el:19850410
- Type: Article
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–581
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The first p-channel GaAs SIS (semiconductor-insulator-semiconductor) FET having a p+-GaAs/undoped GaAlAs/undoped GaAs structure is reported. The FET fabricated shows a transconductance of gm=30 mS/mm, a drain conductance of gd=2.5 mS/mm and a threshold voltage of Vth=+0.2 V at 77 K in the dark.
Simple and accurate loss measurement technique for semiconductor optical waveguides
- Author(s): R.G. Walker
- Source: Electronics Letters, Volume 21, Issue 13, p. 581 –583
- DOI: 10.1049/el:19850411
- Type: Article
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Loss figures for GaAs/GaAlAs heterostructure optical waveguides have been derived from Fabry-Perot cavity resonances. These correlate with the mean guide transmissions within ±0.5 dB for 75% of the guides measured, for losses up to 12 dB per pass.
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