Online ISSN
1350-911X
Print ISSN
0013-5194
Electronics Letters
Volume 20, Issue 6, 15 March 1984
Volumes & issues:
-
Volume 59 (2023)
-
Volume 58 (2022)
-
Volume 57 (2021)
-
Volume 56 (2020)
-
Volume 55 (2019)
-
Volume 54 (2018)
-
Volume 53 (2017)
-
Volume 52 (2016)
-
Volume 51 (2015)
-
Volume 50 (2014)
-
Volume 49 (2013)
-
Volume 48 (2012)
-
Volume 47 (2011)
-
Volume 46 (2010)
-
Volume 45 (2009)
-
Volume 44 (2008)
-
Volume 43 (2007)
-
Volume 42 (2006)
-
Volume 41 (2005)
-
Volume 40 (2004)
-
Volume 39 (2003)
-
Volume 38 (2002)
-
Volume 37 (2001)
-
Volume 36 (2000)
-
Volume 35 (1999)
-
Volume 34 (1998)
-
Volume 33 (1997)
-
Volume 32 (1996)
-
Volume 31 (1995)
-
Volume 30 (1994)
-
Volume 29 (1993)
-
Volume 28 (1992)
-
Volume 27 (1991)
-
Volume 26 (1990)
-
Volume 25 (1989)
-
Volume 24 (1988)
-
Volume 23 (1987)
-
Volume 22 (1986)
-
Volume 21 (1985)
-
Volume 20 (1984)
-
Volume 19 (1983)
-
Volume 18 (1982)
-
Volume 17 (1981)
-
Volume 16 (1980)
-
Volume 15 (1979)
-
Volume 14 (1978)
-
Volume 13 (1977)
-
Volume 12 (1976)
-
Volume 11 (1975)
-
Volume 10 (1974)
-
Volume 9 (1973)
-
Volume 8 (1972)
-
Volume 7 (1971)
-
Volume 6 (1970)
-
Volume 5 (1969)
-
Volume 4 (1968)
-
Volume 3 (1967)
-
Volume 2 (1966)
-
Volume 1 (1965)
Volume 20, Issue 6
15 March 1984
Continuous-wave operation of 1.5 μm distributed-feedback ridge-waveguide lasers
- Author(s): L.D. Westbrook ; A.W. Nelson ; P.J. Fiddyment ; J.S. Evans
- Source: Electronics Letters, Volume 20, Issue 6, p. 225 –226
- DOI: 10.1049/el:19840151
- Type: Article
- + Show details - Hide details
-
p.
225
–226
(2)
CW operation of 1.5 μm ridge-waveguide DFB lasers is reported for the first time. The ridge-waveguide DFB laser structure offers the prospect of high modulation speeds due to the absence of parasitic capacitances associated with reverse-biased current-blocking layers. These devices also represent the first report of CW operation of DFB lasers fabricated using the hybrid LPE/MOCVD crystal-growth technique and also of DFB lasers with gratings produced by electron-beam lithography.
Fibre loss increase due to hydrogen generated at high temperatures
- Author(s): Y. Murakami ; K. Noguchi ; K. Ishihara ; Y. Negishi
- Source: Electronics Letters, Volume 20, Issue 6, p. 226 –228
- DOI: 10.1049/el:19840152
- Type: Article
- + Show details - Hide details
-
p.
226
–228
(3)
The loss changes at 1.39 and 1.88 μm are measured for various nylon-jacketed fibres at a high temperature of 200°C. The loss increase at 1.39 μm is due to the Si-OH-bond formation, and that at 1.88 μm is caused by the absorption of hydrogen molecules in the silica glass. It is found that the loss increase due to the OH-bond formation is in proportion to the time-integrated concentration of the generated hydrogen molecules.
Waveguided optical switch in InGaAs/InP using free-carrier plasma dispersion
- Author(s): O. Mikami and H. Nakagome
- Source: Electronics Letters, Volume 20, Issue 6, p. 228 –229
- DOI: 10.1049/el:19840153
- Type: Article
- + Show details - Hide details
-
p.
228
–229
(2)
Waveguided optical switches using a carrier injection plasma dispersion are proposed. InGaAsP/InP four-port switches with two intersecting single-mode channel waveguides were fabricated by selective LPE and investigated at 1.5 μm wavelength. Optical switching was observed, based on mode interference in the waveguide intersecting region.
Boundary element method for calculation of depletion layer profiles
- Author(s): F. Cuypers and G. de Mey
- Source: Electronics Letters, Volume 20, Issue 6, p. 229 –230
- DOI: 10.1049/el:19840154
- Type: Article
- + Show details - Hide details
-
p.
229
–230
(2)
A numerical method is presented to calculate the two-dimensional potential distribution in a semiconductor according to the abrupt depletion approximation. The technique is based on the boundary element method, and the shape of the depletion region is determined iteratively.
Stable low-loss single-mode couplers
- Author(s): T. Bricheno and A. Fielding
- Source: Electronics Letters, Volume 20, Issue 6, p. 230 –232
- DOI: 10.1049/el:19840155
- Type: Article
- + Show details - Hide details
-
p.
230
–232
(3)
Single-mode optical-fibre couplers have been fabricated from standard production fibre using a fused biconical taper technique. The packaged devices have very low insertion loss (≲0.1 dB), good thermal and mechanical stability, and exhibit negligible polarisation selectivity.
Rayleigh scatter measurements of a 42 km single-mode fibre at 1.55 μm wavelength using an LD and an LN2 cooled Ge-PIN detector
- Author(s): M. Fujise and M. Kuwazuru
- Source: Electronics Letters, Volume 20, Issue 6, p. 232 –233
- DOI: 10.1049/el:19840156
- Type: Article
- + Show details - Hide details
-
p.
232
–233
(2)
A 42 km single-mode fibre has been observed by an OTDR at 1.55 μm wavelength utilising a semiconductor laser and a Ge-PIN photodiode cooled to 77 K with liquid nitrogen together with a feedback resistor of a transimpedance amplifier. The dark current and the thermal noise have been drastically decreased.
Highly efficient single-longitudinal-mode operation of antireflection-coated 1.3 μm DFB-DC-PBH LD
- Author(s): M. Yamaguchi ; M. Kitamura ; I. Mito ; S. Murata ; K. Kobayashi
- Source: Electronics Letters, Volume 20, Issue 6, p. 233 –235
- DOI: 10.1049/el:19840157
- Type: Article
- + Show details - Hide details
-
p.
233
–235
(3)
Lasing characteristics for a 1.3 μm InGaAsP/InP distributed-feedback double-channel planar buried-heterostructure laser diode (DFB-DC-PBH LD) have been remarkably improved by antireflection (AR) coating applied on the front facet. CW single-longitudinal-mode (SLM) operation power as high as 55 mW, and differential quantum efficiency as high as 36%, have been obtained from the coated front facet. CW SLM operation has been achieved up to 105°C.
High sensitivity of VPE-grown InGaAs/InP-heterostructure APD with buffer layer and guard-ring structure
- Author(s): Y. Matsushima ; Y. Noda ; Y. Kushiro ; N. Seki ; S. Akiba
- Source: Electronics Letters, Volume 20, Issue 6, p. 235 –236
- DOI: 10.1049/el:19840158
- Type: Article
- + Show details - Hide details
-
p.
235
–236
(2)
A planar-type InGaAs/InP-heterostructure APD with an InGaAsP buffer layer was made by using a VPE technique. To avoid the edge breakdown, a guard-ring structure was employed. The average received optical power for a 10−9 error rate at 280 Mbit/s was as low as −43 dBm, which corresponded to 2 and 7 dB improvements over a Ge-APD at 1.52 and 1.59 μm, respectively.
Switched-capacitor recharging devices for VIS filters using fully differential operational amplifiers
- Author(s): F. Montecchi
- Source: Electronics Letters, Volume 20, Issue 6, p. 236 –238
- DOI: 10.1049/el:19840159
- Type: Article
- + Show details - Hide details
-
p.
236
–238
(3)
A basic switched-capacitor recharging device is presented useful in voltage-inverter-switch filter implementations. A differential operational amplifier is used: there follows a simplified timing scheme, while insensitivities to parasitic capacitances can be ensured. An example of a fully differential third-order lowpass filter is given with numerical analysis of the possible mismatches in the values of the capacitors of the two signal paths.
11.2 GHz picosecond optical pulse generation in gain-switched short-cavity InGaAsP injection lasers by high-frequency direct modulation
- Author(s): Chinlon Lin ; C.A. Burrus ; G. Eisenstein ; R.S. Tucker ; P. Besomi ; R.J. Nelson
- Source: Electronics Letters, Volume 20, Issue 6, p. 238 –240
- DOI: 10.1049/el:19840160
- Type: Article
- + Show details - Hide details
-
p.
238
–240
(3)
We report the generation of high-speed optical pulses in gain-switched short-cavity InGaAsP injection lasers by high-frequency direct modulation. Short pulses (25 ps) with high on/off ratio were obtained at 11.2 GHz from a short-cavity double-channel planar buried-heterostructure (DCPBH) InGaAsP semiconductor laser biased at three times the threshold current. This is the first report of direct modulation above 10 GHz for InGaAsP lasers.
Time-domain interpretation of four-photon spectra from optical fibres
- Author(s): G.E. Rosman
- Source: Electronics Letters, Volume 20, Issue 6, p. 240 –241
- DOI: 10.1049/el:19840161
- Type: Article
- + Show details - Hide details
-
p.
240
–241
(2)
For a process where the pump power is divided between two modes the frequency shift is shown to be directly proportional to the intermodal delay, provided the material dispersion has the appropriate form. Results obtained with a vapour-axial-dispersion silica fibre demonstrate the subpicosecond resolution which is possible.
Wideband translinear current convertor
- Author(s): A. Fabre
- Source: Electronics Letters, Volume 20, Issue 6, p. 241 –242
- DOI: 10.1049/el:19840162
- Type: Article
- + Show details - Hide details
-
p.
241
–242
(2)
A bipolar current-to-current convertor (CCCS) using a PNP-NPN translinear loop and two current mirrors is described. This convertor has a virtual earth input, and may be used to realise voltage-current conversion (VCCS). This convertor configuration enables us to obtain a wideband frequency response. The characteristics of a practical current source are presented.
End effects in coupled rectangular resonators in unilateral fin line
- Author(s): A.K. Agrawal and B. Bhat
- Source: Electronics Letters, Volume 20, Issue 6, p. 242 –244
- DOI: 10.1049/el:19840163
- Type: Article
- + Show details - Hide details
-
p.
242
–244
(3)
Spectral domain analysis is used to determine the end effects in coupled rectangular slot resonators in unilateral fin lines. End corrections computed as a function of the structural parameters are reported.
Differential stress distribution in a polarisation-holding fibre coupler
- Author(s): N. Shibata ; M. Kawachi ; M. Tokuda
- Source: Electronics Letters, Volume 20, Issue 6, p. 244 –246
- DOI: 10.1049/el:19840164
- Type: Article
- + Show details - Hide details
-
p.
244
–246
(3)
Differential stress distribution in a fused cross-sectional area of a polarisation-holding fibre coupler has been measured by using a Senarmont compensator. The stress profile is found to be effective for holding linear polarisations through the coupling region, i.e. the maximum stress difference is induced in the core region for the fibre coupler.
Scalar quadratic control with amplitude constraints
- Author(s): L.W. Bezanson
- Source: Electronics Letters, Volume 20, Issue 6, p. 246 –247
- DOI: 10.1049/el:19840165
- Type: Article
- + Show details - Hide details
-
p.
246
–247
(2)
The letter presents a derivation of the control law which satisfies a scalar quadratic performance index, subject to a hard constraint on the magnitude of the input variable. The solution forms a basis from which adaptive control systems with input constraints may be derived.
Nonlinear crosstalk due to stimulated Raman scattering in a two-channel wavelength-division-multiplexed system
- Author(s): A.M. Hill ; D. Cotter ; J.V. Wright
- Source: Electronics Letters, Volume 20, Issue 6, p. 247 –249
- DOI: 10.1049/el:19840166
- Type: Article
- + Show details - Hide details
-
p.
247
–249
(3)
The effects of stimulated Raman crosstalk on two binary PCM channels, wavelength-multiplexed in a single optical fibre, are minimised by optimising the ratio of powers launched into each channel. The longest repeater spacings that could be achieved by increasing the launched powers are thereby obtained for two WDM channels of equal group velocity.
Stability of two modes in DFB laser diode under high data rate modulation
- Author(s): S. Yamamoto ; N. Seki ; H. Sakaguchi
- Source: Electronics Letters, Volume 20, Issue 6, p. 249 –250
- DOI: 10.1049/el:19840167
- Type: Article
- + Show details - Hide details
-
p.
249
–250
(2)
Using a DFB-LD with two longitudinal modes in the 1.55 μm region, the mode stability was examined experimentally. It is found that these modes are very stable under direct modulation at least up to around 300 Mbit/s and there is no power penalty due to mode partition noise in 97 km single-mode-fibre transmission at 280 Mbit/s.
Attenuation/time relation for OH formation in optical fibres exposed to H2
- Author(s): K.W. Plessner and S.J. Stannard-Powell
- Source: Electronics Letters, Volume 20, Issue 6, p. 250 –252
- DOI: 10.1049/el:19840168
- Type: Article
- + Show details - Hide details
-
p.
250
–252
(3)
The increase in attenuation due to POH and GeOH formation, when fibres are exposed to hydrogen, has been found to follow a log (time) relation. Results are given for fibres with different phosphorus content. A possible explanation for the log t behaviour is discussed and, using the relationship, a prediction of long-term attenuation rise is made. The rise thus predicted is very small for current low-phosphorus fibres.
Theoretical radiation admittance of a large bandwidth flat symmetrical folded dipole
- Author(s): G. Dubost ; G. Beauquet ; C. Vinatier
- Source: Electronics Letters, Volume 20, Issue 6, p. 252 –253
- DOI: 10.1049/el:19840169
- Type: Article
- + Show details - Hide details
-
p.
252
–253
(2)
A theoretical model, equivalent to several lossy transmission lines acting at quasi TEM mode, is given to explain the bandwidth and the radiation admittance of the flat symmetrical folded dipole. We deduced that the flat dipole is acting at its third resonance with the largest bandwidth. Theoretical results are in good agreement with experiments realised on a model already used in several arrays of high gain or low sidelobe level.
Multipath detection in stationary VHF FM channels
- Author(s): J.R. Walton ; J.V. Hanson ; R.J. Inkol
- Source: Electronics Letters, Volume 20, Issue 6, p. 253 –255
- DOI: 10.1049/el:19840170
- Type: Article
- + Show details - Hide details
-
p.
253
–255
(3)
A multipath detection scheme for FM signals is presented. The method uses both the envelope and the instantaneous frequency to derive a measure of the multipath presence. Two indicators are proposed and simulation results presented support the use of the technique.
Processing of InP MIS devices monitored via photoluminescence measurements
- Author(s): S. Krawczyk ; B. Bailly ; B. Sautreuil ; R. Blanchet ; P. Viktorovitch
- Source: Electronics Letters, Volume 20, Issue 6, p. 255 –256
- DOI: 10.1049/el:19840171
- Type: Article
- + Show details - Hide details
-
p.
255
–256
(2)
A remarkable one-to-one correlation is observed between photoluminescence (PL) intensity and surface state density in the upper part of the gap of n-type InP. Measurement of the PL intensity is shown to be a simple and efficient method for monitoring each individual technological step of fabrication of MIS devices on InP.
Theoretical study on the radial line transformer in a rectangular waveguide
- Author(s): Wu Zheng-De
- Source: Electronics Letters, Volume 20, Issue 6, p. 256 –258
- DOI: 10.1049/el:19840172
- Type: Article
- + Show details - Hide details
-
p.
256
–258
(3)
A theoretical method is given for calculating the input impedance of the radial line transformer (RLT) in a rectangular waveguide. It is shown that this method is effective and can be used successfully in engineering applications.
Influence of degeneracy on behaviour of homojunction GaAs bipolar transistor
- Author(s): J.P. Bailbe ; A. Marty ; G. Rey
- Source: Electronics Letters, Volume 20, Issue 6, p. 258 –259
- DOI: 10.1049/el:19840173
- Type: Article
- + Show details - Hide details
-
p.
258
–259
(2)
In the letter the beneficial influence of degeneracy mechanisms on the electrical properties of a homojunction bipolar transistor has been highlighted.
Magnetic field assisted bonding of prefabricated grid to a Cu2S-CdS solar cell
- Author(s): S. Deb ; M.K. Mukherjee ; B. Ghosh
- Source: Electronics Letters, Volume 20, Issue 6, p. 259 –261
- DOI: 10.1049/el:19840174
- Type: Article
- + Show details - Hide details
-
p.
259
–261
(3)
A new technique, the magnetic field assisted bonding is described for proper encapsulation of a thin-film Cu2S-CdS solar cell. This is made possible by using a thin layer of nickel coating on the substrate as the back-electrode. Results on the dependence of the series resistance, short-circuit current, open-circuit voltage, shunt resistance, diode ideality factor and fill factor on the magnetic field, the time and the temperature of application and coating of the grid are presented and discussed.
Single-longitudinal-mode operation of DFB-DC-PBH LD under Gbit/s modulation
- Author(s): I. Mito ; M. Kitamura ; M. Yamaguchi ; K. Kobayashi ; I. Takano
- Source: Electronics Letters, Volume 20, Issue 6, p. 261 –263
- DOI: 10.1049/el:19840175
- Type: Article
- + Show details - Hide details
-
p.
261
–263
(3)
Modulation characteristics of a 1.3 μm distributed-feedback double-channel planar-buried-heterostructure laser diode (DFB-DC-PBH LD) have been examined. Clear eye patterns have been obtained with a single-longitudinal-mode spectrum under 2 Gbit/s RZ pseudorandom-pulse modulation.
Room-temperature pulsed operation of GaxIn1−xAsyP1−y/Gax'In1−x'Asy'P1−y' DH visible injection laser grown on (100) GaAs by a two-phase-solution technique
- Author(s): H. Kawanishi ; T. Aota ; T. Iwakami
- Source: Electronics Letters, Volume 20, Issue 6, p. 263 –264
- DOI: 10.1049/el:19840176
- Type: Article
- + Show details - Hide details
-
p.
263
–264
(2)
Room-temperature pulsed operation of a GaxIn1−xAsyP1−y/Gax'In1−x'Asy'P1−y' double-heterostructure visible injection laser diode is reported. The laser diode is grown by liquid-phase epitaxy on (100) GaAs, and the active layer is grown by a two-phase-solution technique. The threshold current density is 16 kA/cm2 for the laser diode lasing at about 721 nm at room temperature.
Syndrome- and autocorrelation-testable internally unate combinational networks
- Author(s): E. Eris and J.C. Muzio
- Source: Electronics Letters, Volume 20, Issue 6, p. 264 –266
- DOI: 10.1049/el:19840177
- Type: Article
- + Show details - Hide details
-
p.
264
–266
(3)
It is known that all unate lines of an internally unate realisation of a boolean function are syndrome-testable. For other lines in a circuit there have been a number of suggestions for hardware modifications to ensure that a circuit is syndrome-testable. The letter proposes, as an alternative to hardware modification, augmenting the syndrome testing with auto-correlation testing.
Direct method for discrete low-order modelling
- Author(s): C.P. Therapos
- Source: Electronics Letters, Volume 20, Issue 6, p. 266 –268
- DOI: 10.1049/el:19840178
- Type: Article
- + Show details - Hide details
-
p.
266
–268
(3)
An easily implemented method is presented to reduce the order of high-order z transfer functions possessing dominant poles. Without using transformations into the s-domain and simply by adjusting the values of certain parameters, one can enhance the approximation at long or short times.
Fast radiation-induced attenuation in single-mode optical fibres
- Author(s): P.A. Jones ; C. Lamb ; J.L. Watson
- Source: Electronics Letters, Volume 20, Issue 6, p. 268 –269
- DOI: 10.1049/el:19840179
- Type: Article
- + Show details - Hide details
-
p.
268
–269
(2)
Single-mode optical fibres (SMOF) with Ge-doped silica cores have been subjected to nanosecond pulses of 8 MeV electrons and X-rays at up to 5 Gy/pulse. The radiated-induced attenuation was studied at 630 nm with nanosecond resolution. Results suggest that SMOF and multimode optical fibres (MMOF) of similar composition exhibit comparable susceptibilities to ionising radiation.
Detection of single 1.3 μm photons at 45 Mbit/s
- Author(s): B.F. Levine and C.G. Bethea
- Source: Electronics Letters, Volume 20, Issue 6, p. 269 –271
- DOI: 10.1049/el:19840180
- Type: Article
- + Show details - Hide details
-
p.
269
–271
(3)
We have achieved single-photon detection at 45 Mbit/s, with photons having a wavelength of 1.3 μm. This is by far the highest photon-counting frequency ever attained.
Erratum: Optical correlation in Bi12SiO20 at 632.8 nm
- Author(s): C.R. Petts ; M.W. McCall ; L.C. Laycock
- Source: Electronics Letters, Volume 20, Issue 6, page: 271 –271
- DOI: 10.1049/el:19840181
- Type: Article
- + Show details - Hide details
-
p.
271
(1)
Erratum: ESR study on loss increase of 500°C heat-treated Ge-doped optical fibres
- Author(s): M. Nakahara ; Y. Ohmori ; H. Itoh
- Source: Electronics Letters, Volume 20, Issue 6, page: 271 –271
- DOI: 10.1049/el:19840182
- Type: Article
- + Show details - Hide details
-
p.
271
(1)
Erratum: Nondestructive SAW material attenuation via acoustic microscopy
- Author(s): R.D. Weglein
- Source: Electronics Letters, Volume 20, Issue 6, page: 271 –271
- DOI: 10.1049/el:19840183
- Type: Article
- + Show details - Hide details
-
p.
271
(1)
Erratum: 1.03 GHz operation of a low-loss SAW filter using 3-phase unidirectional transducers with thin dielectric layered feed electrodes
- Author(s): J.K. Gautam ; T. Meguro ; K. Yamanouchi
- Source: Electronics Letters, Volume 20, Issue 6, page: 271 –271
- DOI: 10.1049/el:19840184
- Type: Article
- + Show details - Hide details
-
p.
271
(1)
Erratum: Direct measurement of the frequency-modulation characteristics of a coupled-cavity laser
- Author(s): A.S. Sudbø
- Source: Electronics Letters, Volume 20, Issue 6, page: 271 –271
- DOI: 10.1049/el:19840185
- Type: Article
- + Show details - Hide details
-
p.
271
(1)
Most viewed content for this Journal
Article
content/journals/el
Journal
5
Most cited content for this Journal
-
Extreme multistability in a memristive circuit
- Author(s): Bo-Cheng Bao ; Quan Xu ; Han Bao ; Mo Chen
- Type: Article
-
Absorptive frequency selective surface using parallel LC resonance
- Author(s): Qiang Chen ; Liguo Liu ; Liang Chen ; Jiajun Bai ; Yunqi Fu
- Type: Article
-
Partial spectral search-based DOA estimation method for co-prime linear arrays
- Author(s): Fenggang Sun ; Peng Lan ; Bin Gao
- Type: Article
-
Experimental verification of on-chip CMOS fractional-order capacitor emulators
- Author(s): G. Tsirimokou ; C. Psychalinos ; A.S. Elwakil ; K.N. Salama
- Type: Article
-
54 Gbit/s OOK transmission using single-mode VCSEL up to 2.2 km MMF
- Author(s): G. Stepniak ; A. Lewandowski ; J.R. Kropp ; N.N. Ledentsov ; V.A. Shchukin ; N. Ledentsov Jr. ; G. Schaefer ; M. Agustin ; J.P. Turkiewicz
- Type: Article
