Online ISSN
1350-911X
Print ISSN
0013-5194
Electronics Letters
Volume 20, Issue 5, 1 March 1984
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Volume 20, Issue 5
1 March 1984
Quick fault location in multistage interconnection networks
- Author(s): L. Ciminiera
- Source: Electronics Letters, Volume 20, Issue 5, page: 193 –193
- DOI: 10.1049/el:19840127
- Type: Article
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A new procedure for locating a faulty element in a class of multistage interconnection networks based on 2 × 2 crossbar switches is presented. It allows one kind of fault to be located in a number of steps which does not depend on the network size. With the result so obtained and other recently developed procedures, the networks considered can be diagnosed in a constant number of steps, whatever the type of fault.
Radiation-induced effects in a highly birefringent fibre
- Author(s): M.J. Marrone ; S.C. Rashleigh ; E.J. Friebele ; K.J. Long
- Source: Electronics Letters, Volume 20, Issue 5, p. 193 –194
- DOI: 10.1049/el:19840128
- Type: Article
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–194
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The effect of γ-ray irradiation on a high-birefringence polarisation-holding fibre is investigated. A permanent attenuation of 2000 dB/km at a wavelength of 0.85 μm results from a dose of 6 × 105 rad. For the same dose, there is no appreciable change in either the fibre birefringence or the polarisation-holding parameter. This indicates that no significant crosscoupling of the polarisation modes is caused by the defects induced by ionising radiation.
Simplified approach to probe-corrected spherical near-field scanning
- Author(s): A.D. Yaghjian
- Source: Electronics Letters, Volume 20, Issue 5, p. 195 –196
- DOI: 10.1049/el:19840129
- Type: Article
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A multipole representation for the response of an arbitrary receiving antenna is derived that allows the formulation of probe-corrected spherical near-field scanning simply in terms of conventional vector spherical harmonics. Both the representation and formulation are free of rotational and translational addition theorems. A sampling theorem derived for Legendre functions is used to evaluate the resulting orthogonality integrals by direct summation in a computer time proportional to (ka)3.
InGaAs pin photodiode fabricated on semi-insulating InP substrate for monolithic integration
- Author(s): K. Li ; E. Rezek ; H.D. Law
- Source: Electronics Letters, Volume 20, Issue 5, p. 196 –198
- DOI: 10.1049/el:19840130
- Type: Article
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A low-dark-current high-speed InGaAs PIN photodiode suitable for optoelectronic monolithic integration has been fabricated by LPE method on semi-insulating InP substrate. The photodiode has the lowest reported dark-current density of 2.5 × 10−6 A/cm2 at −10 V in this material system. At the operating voltage of −5 V, an external quantum efficiency of >90% at 1.3 μm and >83% at 1.55 μm, a rise time of <35 ps and an FWHM of <45 ps have been measured.
New thermoplastic dual-coextrusion-coating system for optical-fibre drawing
- Author(s): M. Wagatsuma ; H. Okazaki ; T. Kimura ; S. Yamakawa
- Source: Electronics Letters, Volume 20, Issue 5, p. 198 –199
- DOI: 10.1049/el:19840131
- Type: Article
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–199
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A new thermoplastic dual-coextrusion-coating technique consisting of a soft thermoplastic rubber primary coating and a hard secondary coating has been proposed as an in-line coating system with fibre drawing. The use of a low linear-expansion-coefficient polymer as the hard secondary coating is a necessary condition for obtaining no microbending loss of the dual-coated fibres.
Transmission loss of thermotropic liquid-crystal polyester-jacketed optical fibre at low temperature
- Author(s): S. Yamakawa ; Y. Shuto ; F. Yamamoto
- Source: Electronics Letters, Volume 20, Issue 5, p. 199 –201
- DOI: 10.1049/el:19840132
- Type: Article
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–201
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The transmission loss at low temperature of an optical fibre tightly jacketed with a new low-linear-expansion-coefficient plastic, thermotropic liquid-crystal polymer, is reported. The new type of tight-jacket fibre is free from microbending losses due to jacket contraction when exposed to heat cycles from −70 to 80°C.
New UV-curable primary coating material for optical fibre
- Author(s): T. Kimura and S. Yamakawa
- Source: Electronics Letters, Volume 20, Issue 5, p. 201 –202
- DOI: 10.1049/el:19840133
- Type: Article
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A new UV-curable primary coating material, polybutadiene acrylate (PBA), has been developed. The new acrylate has much lower modulus at low temperature than epoxy and urethane acrylates. The transmission loss increase at low temperature for coated fibres is related to the modulus value for coatings.
Radiation characteristics of short helical antenna and its mutual coupling
- Author(s): H. Nakano ; N. Asaka ; J. Yamauchi
- Source: Electronics Letters, Volume 20, Issue 5, p. 202 –204
- DOI: 10.1049/el:19840134
- Type: Article
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A 1.5-turn balanced helical antenna is numerically and experimentally investigated. It is found that the helix has a smoothly decaying current distribution to radiate a circularly polarised wave. Further study shows how the mutual coupling between a pair of identical helixes can be reduced by rotating one helix with respect to another.
Monolayer heterointerfaces and thin layers (∼10 Å) in AlxGa1−xAs-GaAs superlattices grown by metalorganic chemical vapour deposition
- Author(s): J.M. Brown ; N. Holonyak ; M.J. Ludowise ; W.T. Dietze ; C.R. Lewis
- Source: Electronics Letters, Volume 20, Issue 5, p. 204 –205
- DOI: 10.1049/el:19840135
- Type: Article
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Transmission electron microscopy (TEM) and lattice fringe images are used to show that metalorganic chemical vapour deposition (MOCVD) is capable of growing highly uniform AlxGa1−xAs-GaAs quantum-well heterostructures (QWHs) and superlattices (SLs) with monolayer heterointerfaces and layers as thin as ∼10 Å.
Floating ideal FDNR using only two current conveyors
- Author(s): R. Senani
- Source: Electronics Letters, Volume 20, Issue 5, p. 205 –206
- DOI: 10.1049/el:19840136
- Type: Article
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A new floating ideal FDNR realisation is presented which requires only two current conveyors (CC) as opposed to previously known schemes which require three or more CCs.
FM noise of index-guided GaAlAs diode lasers
- Author(s): R. Schimpe ; B. Stegmüller ; W. Harth
- Source: Electronics Letters, Volume 20, Issue 5, p. 206 –208
- DOI: 10.1049/el:19840137
- Type: Article
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–208
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The FM-noise spectrum of index-guided GaAlAs-diode lasers is measured for different lengths of the laser cavity. The observed FM-noise peak near the internal laser resonance and the decrease of the FM noise with increasing cavity length is in agreement with a model which is considering the spontaneous emission noise source. From the measured noise data, the linewidth enhancement factor is determined.
Semiquantitative X-ray microanalysis on preforms for optical fibres
- Author(s): J. Hersener ; H.-P. Huber ; J. von Wienskowski
- Source: Electronics Letters, Volume 20, Issue 5, p. 208 –209
- DOI: 10.1049/el:19840138
- Type: Article
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The distribution of the GeO2-dopant in optical waveguides prepared by the VCVD process is determined with an SEM using energy dispersive microanalysis. A strong characteristic fluctuation of the GeO2-density within each freshly deposited layer is observed. This original GeO2-distribution is changed by interdiffusion and evaporation processes during the following steps of preform preparation and fibre drawing.
Linearised polarimetric optical fibre sensor using a ‘heterodyne-type’ signal recovery scheme
- Author(s): A.D. Kersey ; M. Corke ; D.A. Jackson
- Source: Electronics Letters, Volume 20, Issue 5, p. 209 –211
- DOI: 10.1049/el:19840139
- Type: Article
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–211
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A ‘heterodyne-type’ detection scheme for use with single-mode-fibre polarimetric sensors is described which overcomes the problems of ‘fringe’ ambiguity and small-signal fading normally associated with polarimetric sensors. The system is demonstrated using a length of ‘bow-tie’ fibre as a simple strain sensor.
Compensation in time-dispersion properties of cascaded multimode fibres
- Author(s): M. Bonetti ; G. Cancellieri ; P. Fantini
- Source: Electronics Letters, Volume 20, Issue 5, p. 211 –212
- DOI: 10.1049/el:19840140
- Type: Article
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–212
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Time-dispersion effects in cascaded multimode fibres are investigated. The well known compensation behaviour between index profiles having opposite deviations from the optimum is demonstrated through a new very simple theoretical approach. The effects of possible joint errors are also taken into account.
High-efficiency V-band GaAs IMPATT diodes
- Author(s): Y.E. Ma ; E. Benko ; T. Trinh ; L.P. Erickson ; T.J. Mattord
- Source: Electronics Letters, Volume 20, Issue 5, p. 212 –214
- DOI: 10.1049/el:19840141
- Type: Article
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–214
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Double-drift GaAs IMPATT diodes were designed for V-band frequency operations and fabricated using molecular-beam epitaxy. The diodes were fabricated in two configurations: (a) circular mesa diodes with silver-plated (integrated) heat sinks; (b) pill-type diodes bonded to diamond heat sinks. Both configurations utilised a miniature quartz-ring package. Output power greater than 1 W CW was achieved at V-band frequencies from diodes on diamond heat sinks. The best conversion efficiency was 13.3% at 55.5 GHz with 1 W output power.
Electromagnetic model of symmetrical five-port waveguide junction
- Author(s): S.P. Yeo and A.L. Cullen
- Source: Electronics Letters, Volume 20, Issue 5, p. 214 –215
- DOI: 10.1049/el:19840142
- Type: Article
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–215
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Using the least-squares boundary residual method, an electromagnetic model of the symmetrical five-port E-plane waveguide junction is developed. The theoretical results thus obtained agree well with experimental data and can aid the design of a five-port junction for use in a six-port reflectometer system.
Plane multipoint parameter extraction from RCS diagram record
- Author(s): J. Saillard
- Source: Electronics Letters, Volume 20, Issue 5, p. 215 –217
- DOI: 10.1049/el:19840143
- Type: Article
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In a former letter (1982) we have shown that it is possible to extract the parameters of an isotropic linear multipoint from the diffracted power by a target represented by point scatterers having isotropic RCS diagrams. In the letter we propose a method of extraction of isotropic plane target parameters.
High-speed frequency dividers using GaAs/GaAlAs high-electron-mobility transistors
- Author(s): C.P. Lee ; S.J. Lee ; D. Hou ; D.L. Miller ; R.J. Anderson ; N.H. Sheng
- Source: Electronics Letters, Volume 20, Issue 5, p. 217 –219
- DOI: 10.1049/el:19840144
- Type: Article
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Very-high-speed divide-by-four circuits have been fabricated by using modulation-doped GaAs/GaAlAs high-electron-mobility transistors. The circuits consist of two T-connected D-flip-flops and are capable of operating at 3.6 GHz with a power dissipation of 0.46 mW per gate at room temperature, and at 5.2 GHz with a power dissipation of 0.78 mW per gate at 77 K. The speed-power products achieved are the lowest ever reported.
Parallel processing of logic module placement
- Author(s): Y. Sugiyama and T. Watanabe
- Source: Electronics Letters, Volume 20, Issue 5, p. 219 –220
- DOI: 10.1049/el:19840145
- Type: Article
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A parallel-processing algorithm for logic module placement is presented. A pairwise interchange algorithm, directed by the steepest-descent concept, is expanded to the parallel-processing case. By using an AAP (adaptive array processor), it is shown that an N-module placement problem can be processed in 0.06N of the time required by a sequential computer (1 MIPS).
Modelling and analysis of dual-gate MESFET mixers
- Author(s): H. Ashoka and R.S. Tucker
- Source: Electronics Letters, Volume 20, Issue 5, p. 220 –221
- DOI: 10.1049/el:19840146
- Type: Article
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A method is presented for the modelling and analysis of dual-gate MESFET mixers. The method can handle all the dominant nonlinear mixing processes, and is valid for arbitrary DC-bias conditions. Good agreement between theory and experiment is demonstrated.
An all-CMOS ternary identity cell for VLSI implementation
- Author(s): A. Heung and H.T. Mouftah
- Source: Electronics Letters, Volume 20, Issue 5, p. 221 –222
- DOI: 10.1049/el:19840147
- Type: Article
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A ternary identity cell composed only of CMOS transistors is presented. The circuit has fewer transistors and better performance than that of previously reported designs. A nano-watt power consumption and fast switching time are important advantages that this circuit possesses. Applications include buffers, pad drivers and triflops.
Le maillage parallélipipédique et le changement de maille dans la méthode TLM en 3 dimensions (Parallelipiped meshing and mesh change in the 3D TLM method)
- Author(s): P. Saguet
- Source: Electronics Letters, Volume 20, Issue 5, p. 222 –224
- DOI: 10.1049/el:19840148
- Type: Article
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La théorie des mailles parallélipipédiques et du changement de maille dans la méthode TLM est exposée. Des résultats sont donnés pour des structures fin-line en cavité. Le temps de calcul est réduit dans un rapport considérable pour de nombreux problèmes.The letter shows how the introduction of parallelepiped meshes and a variable-size mesh into the original three-dimensional TLM method leads to a dramatic reduction of the CPU time needed. The theoretical aspects of these modifications are given, as well as some numerical results obtained for ‘fin-line’ structures in a cavity.
Erratum: Enhancement-mode metal/(Al,Ga)As/GaAs buried-interface field-effect transistor (BIFET)
- Author(s): T.J. Drummond ; W. Kopp ; D. Arnold ; R. Fischer ; H. Morkoç ; L.P. Erickson ; P.W. Palmberg
- Source: Electronics Letters, Volume 20, Issue 5, page: 224 –224
- DOI: 10.1049/el:19840149
- Type: Article
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Erratum: Analysis of coupled asymmetric microstrip lines on a ferrite substrate
- Author(s): B. Janiczak and M. Kitliński
- Source: Electronics Letters, Volume 20, Issue 5, page: 224 –224
- DOI: 10.1049/el:19840150
- Type: Article
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