Online ISSN
1350-911X
Print ISSN
0013-5194
Electronics Letters
Volume 20, Issue 22, 25 October 1984
Volumes & issues:
-
Volume 59 (2023)
-
Volume 58 (2022)
-
Volume 57 (2021)
-
Volume 56 (2020)
-
Volume 55 (2019)
-
Volume 54 (2018)
-
Volume 53 (2017)
-
Volume 52 (2016)
-
Volume 51 (2015)
-
Volume 50 (2014)
-
Volume 49 (2013)
-
Volume 48 (2012)
-
Volume 47 (2011)
-
Volume 46 (2010)
-
Volume 45 (2009)
-
Volume 44 (2008)
-
Volume 43 (2007)
-
Volume 42 (2006)
-
Volume 41 (2005)
-
Volume 40 (2004)
-
Volume 39 (2003)
-
Volume 38 (2002)
-
Volume 37 (2001)
-
Volume 36 (2000)
-
Volume 35 (1999)
-
Volume 34 (1998)
-
Volume 33 (1997)
-
Volume 32 (1996)
-
Volume 31 (1995)
-
Volume 30 (1994)
-
Volume 29 (1993)
-
Volume 28 (1992)
-
Volume 27 (1991)
-
Volume 26 (1990)
-
Volume 25 (1989)
-
Volume 24 (1988)
-
Volume 23 (1987)
-
Volume 22 (1986)
-
Volume 21 (1985)
-
Volume 20 (1984)
-
Volume 19 (1983)
-
Volume 18 (1982)
-
Volume 17 (1981)
-
Volume 16 (1980)
-
Volume 15 (1979)
-
Volume 14 (1978)
-
Volume 13 (1977)
-
Volume 12 (1976)
-
Volume 11 (1975)
-
Volume 10 (1974)
-
Volume 9 (1973)
-
Volume 8 (1972)
-
Volume 7 (1971)
-
Volume 6 (1970)
-
Volume 5 (1969)
-
Volume 4 (1968)
-
Volume 3 (1967)
-
Volume 2 (1966)
-
Volume 1 (1965)
Volume 20, Issue 22
25 October 1984
Envelope detection and correction of SSB
- Author(s): M.A.M.A. Zaid and G.B. Lockhart
- Source: Electronics Letters, Volume 20, Issue 22, p. 901 –902
- DOI: 10.1049/el:19840612
- Type: Article
- + Show details - Hide details
-
p.
901
–902
(2)
Envelope detection is significantly less complex to implement and use than coherent detection if applied to SSB results in gross distortion unless the carrier component is very large. A method of correcting this distortion is discussed and a variant which achieves partial correction with some hardware simplification is investigated. Computer simulation shows that a reduction of 15 dB in second-harmonic distortion can be achieved, and this is confirmed by tests on a prototype system.
Characteristics of Ti-indiffused waveguides in MgO-doped LiNbO3
- Author(s): C.H. Bulmer
- Source: Electronics Letters, Volume 20, Issue 22, p. 902 –904
- DOI: 10.1049/el:19840613
- Type: Article
- + Show details - Hide details
-
p.
902
–904
(3)
Diffusion parameters are determined from prism coupler measurements on optical waveguides formed by Ti diffusion in LiNbO3 doped with 5% MgO. The diffusion coefficient is 3–4 times smaller than for similar waveguides in undoped LiNbO3. The Ti depth profile is shown to be Gaussian by SIMS analysis.
Failure of scalar analyses in dielectric optical waveguides with perturbed refractive-index profile
- Author(s): M. Miyagi and S. Nishida
- Source: Electronics Letters, Volume 20, Issue 22, p. 904 –905
- DOI: 10.1049/el:19840614
- Type: Article
- + Show details - Hide details
-
p.
904
–905
(2)
It is theoretically shown that scalar analyses cannot properly predict the propagation constant of a particular mode in circular dielectric optical waveguides when the angular order of the mode satisfies some condition with respect to the order of the Fourier spectrum of the perturbed refractive-index profile.
Temperature dependence of radiation-induced losses in fibre optics
- Author(s): R.H. West
- Source: Electronics Letters, Volume 20, Issue 22, p. 905 –906
- DOI: 10.1049/el:19840615
- Type: Article
- + Show details - Hide details
-
p.
905
–906
(2)
A general description is given of the effect of temperature on the response to ionising radiation of the less sensitive forms of fibre optics.
Dispersion of Verdet constant in stress-birefringent silica fibre
- Author(s): J. Noda ; T. Hosaka ; Y. Sasaki ; R. Ulrich
- Source: Electronics Letters, Volume 20, Issue 22, p. 906 –908
- DOI: 10.1049/el:19840616
- Type: Article
- + Show details - Hide details
-
p.
906
–908
(3)
The Faraday effect in stress-birefringent silica fibre is discussed theoretically and measured experimentally. In the red and infra-red spectral range, the Verdet constant is found to be VH = 2.0 × 10−35v2 rad/A, where v is the optical frequency in hertz.
Effect of additional heavy metal layer on ZnO-Si monolithic SAW devices
- Author(s): K. Yashiro ; M. Nagumo ; S. Ohkawa ; Y. Kinoshita
- Source: Electronics Letters, Volume 20, Issue 22, p. 908 –909
- DOI: 10.1049/el:19840617
- Type: Article
- + Show details - Hide details
-
p.
908
–909
(2)
Enhancement of electromechanical coupling has been shown in numerical calculations with an additional massive and conducting layer, such as Au, which makes the velocity of SAW slow between a ZnO thin film and an Si substrate. It is also shown that the electromechanical coupling factor can be increased without deterioration of the temperature coefficient of phase velocity.
Two-dimensional profiles of impurity diffusion in semiconductors
- Author(s): A. Buonomo and C. di Bello
- Source: Electronics Letters, Volume 20, Issue 22, p. 909 –910
- DOI: 10.1049/el:19840618
- Type: Article
- + Show details - Hide details
-
p.
909
–910
(2)
The letter shows how two-dimensional impurity profiles in semiconductors can be calculated by applying a simple and efficient finite difference algorithm. The diffusion coefficient employed in the model depends on the impurity concentrations in accordance with the recent theory of nonlinear diffusion in semiconductors. The limit of validity of the more simple linear diffusion model is also determined.
Analytical expression for the high-current I/V characteristic of a distributed diode
- Author(s): P. Tortelier and P. Arsene-Henry
- Source: Electronics Letters, Volume 20, Issue 22, p. 910 –912
- DOI: 10.1049/el:19840619
- Type: Article
- + Show details - Hide details
-
p.
910
–912
(3)
In order to take into account the effect of the metallisation resistance involved in the modelling of FETs with a short and wide gate, we give an analytical treatment of the high-current I/V characteristic of a distributed Schottky diode.
140 Mbit/s optical FSK fibre heterodyne experiment at 1.54 μm
- Author(s): R. Wyatt ; D.W. Smith ; T.G. Hodgkinson ; R.A. Harmon ; W.J. Devlin
- Source: Electronics Letters, Volume 20, Issue 22, p. 912 –913
- DOI: 10.1049/el:19840620
- Type: Article
- + Show details - Hide details
-
p.
912
–913
(2)
An optical fibre heterodyne experiment using 2-FSK modulation at 140 Mbit/s has been operated in the 1.5 μm loss window. A receiver sensitivity of −55 dBm has been obtained; operation over a fibre link of 199.7 km showed no additional system degradation.
Simplified recursive identifier for ARMA processes
- Author(s): M. Farsi ; K.Z. Karam ; K. Warwick
- Source: Electronics Letters, Volume 20, Issue 22, p. 913 –915
- DOI: 10.1049/el:19840621
- Type: Article
- + Show details - Hide details
-
p.
913
–915
(3)
Symmetrical behaviour of the covariance matrix and the positive-definite criterion are used to simplify identification of single-input/single-output systems using recursive least squares. Simulation results are obtained and these are compared with ordinary recursive least squares. The adaptive nature of the identifier is verified by varying the system parameters on convergence.
Combined use of finite-state machines and petri nets for modelling communicating processes
- Author(s): A. Pattavina and S. Trigila
- Source: Electronics Letters, Volume 20, Issue 22, p. 915 –916
- DOI: 10.1049/el:19840622
- Type: Article
- + Show details - Hide details
-
p.
915
–916
(2)
In order to model and verify systems of concurrent processes (such as those involved in communication protocols), finite-state machines and Petri nets can be used as local and global models, respectively. The problem of composing a set of communicating finite-state machines into a single global Petri net is considered in the letter with special attention to the case of more than two processes.
MOCVD growth of GaAs on Si substrates with AlGaP and strained superlattice layers
- Author(s): T. Soga ; S. Hattori ; S. Sakai ; M. Takeyasu ; M. Umeno
- Source: Electronics Letters, Volume 20, Issue 22, p. 916 –918
- DOI: 10.1049/el:19840623
- Type: Article
- + Show details - Hide details
-
p.
916
–918
(3)
GaAs with a mirror-like surface is grown by MOCVD on an Si substrate using an AlP, AlGaP, GaP/GaAs0.5P0.5 super-lattice and GaAs0.5P0.5/GaAs superlattice as intermediate layers. The photoluminescence intensity is found to be about 56% of that of a GaAs substrate grown under the same conditions and is one order of magnitude higher than that grown on a Ge-coated Si substrate, in spite of the early stage of the experiment.
Algorithm for the identification of continuous-time multivariable systems from their discrete-time models
- Author(s): G.J. Lastman ; S. Puthenpura ; N.K. Sinha
- Source: Electronics Letters, Volume 20, Issue 22, p. 918 –919
- DOI: 10.1049/el:19840624
- Type: Article
- + Show details - Hide details
-
p.
918
–919
(2)
A computationally efficient algorithm is given for estimating the state-space model of a continuous-time multivariable system from data obtained with a discrete-time model.
InGaAs/InP mesa photodetector passivated with silicon dioxide
- Author(s): G.R. Antell and R.F. Murison
- Source: Electronics Letters, Volume 20, Issue 22, p. 919 –920
- DOI: 10.1049/el:19840625
- Type: Article
- + Show details - Hide details
-
p.
919
–920
(2)
A combination of mesa and planar techniques has enabled detectors of InGaAs on InP substrates to be masked during diffusion and later passivated by SiO2 films without degrading the dark current. Preliminary lifetests at 100°C are encouraging.
New application of a single six-port reflectometer
- Author(s): Jia Sun
- Source: Electronics Letters, Volume 20, Issue 22, p. 920 –922
- DOI: 10.1049/el:19840626
- Type: Article
- + Show details - Hide details
-
p.
920
–922
(3)
Based on the wave-superposition principle and the equivalent-circuit principle, a new circuit of a single six-port reflectometer is designed. It may be used for measuring any two-port device. The method of calibration and measurement of the circuit is given.
Probabilistic hard-decision table look-up decoding for binary block codes
- Author(s): M.A. El-Agamy and E. Munday
- Source: Electronics Letters, Volume 20, Issue 22, p. 922 –923
- DOI: 10.1049/el:19840627
- Type: Article
- + Show details - Hide details
-
p.
922
–923
(2)
A probabilistic hard-decision decoding algorithm based on the weight distribution of binary block codes and the random error distribution in the channel is briefly described. It reduces the number of look-up iterations performed in the conventional exhaustive search table look-up minimum distance decoder.
Power spectrum of fibre output fluctuation in polarisation-preserving optical fibres
- Author(s): J. Sakai and M. Shimizu
- Source: Electronics Letters, Volume 20, Issue 22, p. 923 –925
- DOI: 10.1049/el:19840628
- Type: Article
- + Show details - Hide details
-
p.
923
–925
(3)
The power spectrum of fibre output intensity fluctuation was measured over 1.0 × 10−3 to 1.0 Hz for elliptical-jacket, PANDA and twisted fibres. Peaks peculiar to the mode conversion effect were observed for the linearly birefringent fibre, while the twisted fibre showed flat frequency characteristics with a reduced fluctuation level.
Four-element beam-forming antenna
- Author(s): Y.C. Cheah and F.J. Paoloni
- Source: Electronics Letters, Volume 20, Issue 22, p. 925 –926
- DOI: 10.1049/el:19840629
- Type: Article
- + Show details - Hide details
-
p.
925
–926
(2)
The letter describes the construction of a four-element beam-forming antenna array operating at 10.5 GHz. Each element is connected to a microprocessor-controlled complex-weight circuit that can alter the amplitude and phase of a microwave signal. By proper selection of the complex weights, the antenna mainbeam can be steered in any direction, within limits, and null constraints can be applied. Some experimental results in beam forming are presented.
Analysis of off-optical-axis anisotropic diffraction configurations in positive uniaxial crystals
- Author(s): J.E.B. Oliveira and E.L. Adler
- Source: Electronics Letters, Volume 20, Issue 22, p. 927 –928
- DOI: 10.1049/el:19840630
- Type: Article
- + Show details - Hide details
-
p.
927
–928
(2)
A new procedure is given for calculating the Bragg angles for anisotropic acousto-optic interaction configurations where the optical axis is arbitrarily offset with respect to the interaction plane and the acoustic wave propagates perpendicular to the optical axis. Analytic expressions are given for the Bragg angles and the acoustic cutoff frequencies as a function of the offset angle.
Reduction of dynamic linewidth in single-frequency semiconductor lasers
- Author(s): R. Olshansky and D. Fye
- Source: Electronics Letters, Volume 20, Issue 22, p. 928 –929
- DOI: 10.1049/el:19840631
- Type: Article
- + Show details - Hide details
-
p.
928
–929
(2)
Carrier density oscillations and frequency chirping of pulse code modulated single frequency semiconductor lasers are shown to be greatly reduced by use of a small current step in the leading edge of the drive pulse. For a 100 km single mode fibre link the dispersion power penalty at 1.55 μm resulting from dynamic line broadening is predicted to be reduced from 3.7 to 1.0 dB by use of the modified current pulse.
Observation of negative differential resistance in In0.53Ga0.47As/InP:Fe JFETs
- Author(s): H. Albrecht
- Source: Electronics Letters, Volume 20, Issue 22, p. 930 –931
- DOI: 10.1049/el:19840632
- Type: Article
- + Show details - Hide details
-
p.
930
–931
(2)
A negative differential resistance (NDR) is observed in the drain-current/drain-source-voltage characteristic of In0.53-Ga0.47As/InP: Fe JFETs with gate lengths of 2 μm and 3 μm at small forward-biased gate-source voltages. This phenomenon is explained by the existence of a stationary Gunn domain in the channel at the drain side edge of the gate.
Microstrip patch array antenna
- Author(s): H. Entschladen and U. Nagel
- Source: Electronics Letters, Volume 20, Issue 22, p. 931 –933
- DOI: 10.1049/el:19840633
- Type: Article
- + Show details - Hide details
-
p.
931
–933
(3)
A microstrip array with mutual coupled rectangular patch radiators is described. By the avoidance of a corporate feeding network, advantages in the antenna performance and design are realisable. Experimental results are presented for both linearly and circularly polarised antennas which demonstrate the usefulness of this special antenna configuration.
Fast biased polynomial transforms for 2D prime length discrete Fourier transforms
- Author(s): Ja-Ling Wu and Soo-Chang Pei
- Source: Electronics Letters, Volume 20, Issue 22, p. 933 –934
- DOI: 10.1049/el:19840634
- Type: Article
- + Show details - Hide details
-
p.
933
–934
(2)
The fast biased polynomial transform (FBPT) is defined directly over a ZN − 1 ring instead of the conventional cyclotomic polynomial rings. For N prime, these FBPTs can be used for the efficient evaluation of the 2D prime length DFT.
Integrated Ka-band finline mixer/modulator
- Author(s): R. Mehran ; J. Ludewig ; L. Szabo
- Source: Electronics Letters, Volume 20, Issue 22, p. 934 –935
- DOI: 10.1049/el:19840635
- Type: Article
- + Show details - Hide details
-
p.
934
–935
(2)
A new mixer/modulator for millimetre-wave applications is presented. The circuit is implemented with a combination of finlines, coplanar lines and microstrip lines. By applying the described mixer/modulator to millimetre-wave systems a twofold use of active elements such as the Gunn element and Schottky diodes is possible. The size of the whole planar structure is about 4 × 4 cm and there is no need for a variable short.
Improving performance of AlGaAs/GaAs monolithic laser/FET by GRIN-SCH quantum-well laser
- Author(s): O. Wada ; S. Yamakoshi ; T. Sanada ; T. Fujii ; T. Horimatsu ; T. Sakurai
- Source: Electronics Letters, Volume 20, Issue 22, p. 936 –937
- DOI: 10.1049/el:19840636
- Type: Article
- + Show details - Hide details
-
p.
936
–937
(2)
An AlGaAs/GaAs graded-index-waveguide separate-confinement-heterostructure (GRIN-SCH) single-quantum-well (SQW) laser has been monolithically integrated with a couple of field-effect-transistor drivers on a semi-insulating GaAs substrate. The adoption of the GRIN-SCH SQW laser has enabled an improvement in the laser/FET performance, exhibiting a low laser threshold current (12 mA) and a high sensitivity of the output light power to the input gate voltage (7.5 mW/facet/V).
Experimental investigation of mutual coupling in a conical horn array
- Author(s): S.M. Tun ; P.J.B. Clarricoats ; C.G. Parini
- Source: Electronics Letters, Volume 20, Issue 22, p. 937 –939
- DOI: 10.1049/el:19840637
- Type: Article
- + Show details - Hide details
-
p.
937
–939
(3)
Mutual coupling in a small dominant mode conical horn array is investigated experimentally and the measured results are compared with theoretical predictions. Degradation in crosspolar purity due to generation of higher-order TM01 and TE21 modes via crosscoupling is confirmed. The effects of edge termination and diffraction are also discussed. Finally, clean-beam cluster patterns are measured and compared with theory.
Slot-line coupler for medical applications
- Author(s): Y.X. Wang
- Source: Electronics Letters, Volume 20, Issue 22, p. 939 –940
- DOI: 10.1049/el:19840638
- Type: Article
- + Show details - Hide details
-
p.
939
–940
(2)
A slot-line electromagnetic energy coupler operating at 915 MHz for noninvasive diagnostic applications is described. The coupler is well matched when it is coupled to the biological tissue (VSWR < 1.5), its structure is simple and energy coupling efficiency is high.
Characteristics of sub-half-micrometre-gate self-aligned GaAs FET by ion implantation
- Author(s): K. Matsumoto ; N. Hashizume ; N. Atoda
- Source: Electronics Letters, Volume 20, Issue 22, p. 940 –942
- DOI: 10.1049/el:19840639
- Type: Article
- + Show details - Hide details
-
p.
940
–942
(3)
A submicrometre-gate self-aligned GaAs FET was fabricated using a flash-annealing technique which could suppress the lateral diffusion of impurities from source and drain n+ regions within about 0.1 μm. The transconductance kept on increasing with the decrease in gate length up to the submicrometre length range. The highest intrinsic transconductance was 315 mS/mm at Lg = 0.44 μm. The threshold voltage and the drain conductance showed large shifts in the sub-half-micrometre-gate length range.
Low-resistance submicrometre gates used for self alignment
- Author(s): K. Ismail and H. Beneking
- Source: Electronics Letters, Volume 20, Issue 22, p. 942 –943
- DOI: 10.1049/el:19840640
- Type: Article
- + Show details - Hide details
-
p.
942
–943
(2)
A novel gate fabrication technique useful for MESFETs is presented. The gates have submicrometre dimensions with an extremely low ohmic resistance and are used for self alignment. Simple optical projection lithography and electroplating techniques are needed. The resulting gates have proved to be mechanically strong.
Silicon millimetre-wave integrated-circuit (SIMMWIC) SPST switch
- Author(s): P.J. Stabile and A. Rosen
- Source: Electronics Letters, Volume 20, Issue 22, p. 943 –944
- DOI: 10.1049/el:19840641
- Type: Article
- + Show details - Hide details
-
p.
943
–944
(2)
The first silicon millimetre-wave integrated circuit (SIMMWIC) has been successfully fabricated. This circuit is a monolithic SPST switch with a 3 dB bandwidth of 20% and a minimum isolation of 21.6 dB across the band (centre frequency is 36.75 GHz). This monolithic circuit is a low-cost reproducible building block for all millimetre-wave control applications.
Contact resistivity of IR lamp alloyed Au-Ge metallisation on GaAs
- Author(s): S.S. Gill ; J.R. Dawsey ; A.G. Cullis
- Source: Electronics Letters, Volume 20, Issue 22, p. 944 –945
- DOI: 10.1049/el:19840642
- Type: Article
- + Show details - Hide details
-
p.
944
–945
(2)
A rapid infra-red (IR) lamp system used to alloy Au-Ge ohmic contacts to n-GaAs has yielded specific contact resistivity a factor of 3 lower than achieved by conventional graphite strip heater. In this initial study temperatures between 430 and 445°C and alloying times of 1 to 5 s have produced the best results.
Characteristics of GaAs/AlGaAs MODFETs grown directly on (100) silicon
- Author(s): R. Fischer ; T. Henderson ; J. Klem ; W.T. Masselink ; W. Kopp ; H. Morkoç ; C.W. Litton
- Source: Electronics Letters, Volume 20, Issue 22, p. 945 –947
- DOI: 10.1049/el:19840643
- Type: Article
- + Show details - Hide details
-
p.
945
–947
(3)
We have successfully grown GaAs/AlGaAs MODFETs directly on silicon substrates by molecular beam epitaxy. We have found that an orientation slightly off (100) is well suited for the growth of GaAs/AlGaAs on silicon substrates. MODFETs fabricated from layers grown on Si had transconductances of 170 mS/mm at room temperature and exhibited no looping. When cooled to 77 K, the transconductance rose to 275 mS/mm. Hall mobilities of 51000 and 38000 cm2/Vs were obtained at 10 and 77 K, respectively, with sheet electron densities of 8.30 × 1011 cm−2 in both cases. These results clearly demonstrate that device quality GaAs/AlGaAs is obtainable directly on Si substrates which has great implications with regard to the monolithic integration of III–V and Si technology.
Planar InGaAs/InP PINFET fabricated by Be ion implantation
- Author(s): S. Hata ; M. Ikeda ; T. Amano ; G. Motosugi ; K. Kurumada
- Source: Electronics Letters, Volume 20, Issue 22, p. 947 –948
- DOI: 10.1049/el:19840644
- Type: Article
- + Show details - Hide details
-
p.
947
–948
(2)
Planar InGaAs PINFETs which provide the same heterostructure for both the PIN and the FET are proposed with the characteristics, p-type regions for PIN and FET are formed by Be ion implantation. Static optical response exhibits the total effective quantum efficiency of 400% at the wavelength of 1.55 μm.
Most viewed content for this Journal
Article
content/journals/el
Journal
5
Most cited content for this Journal
-
Extreme multistability in a memristive circuit
- Author(s): Bo-Cheng Bao ; Quan Xu ; Han Bao ; Mo Chen
- Type: Article
-
Absorptive frequency selective surface using parallel LC resonance
- Author(s): Qiang Chen ; Liguo Liu ; Liang Chen ; Jiajun Bai ; Yunqi Fu
- Type: Article
-
Partial spectral search-based DOA estimation method for co-prime linear arrays
- Author(s): Fenggang Sun ; Peng Lan ; Bin Gao
- Type: Article
-
Experimental verification of on-chip CMOS fractional-order capacitor emulators
- Author(s): G. Tsirimokou ; C. Psychalinos ; A.S. Elwakil ; K.N. Salama
- Type: Article
-
54 Gbit/s OOK transmission using single-mode VCSEL up to 2.2 km MMF
- Author(s): G. Stepniak ; A. Lewandowski ; J.R. Kropp ; N.N. Ledentsov ; V.A. Shchukin ; N. Ledentsov Jr. ; G. Schaefer ; M. Agustin ; J.P. Turkiewicz
- Type: Article
